• JSTS:Journal of Semiconductor Technology and Science
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• 제8권3호
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• pp.232-238
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• 2008

In this paper, a wideband power efficient 2.2 GHz - 4.9 GHz Medium Power Amplifier (MPA), has been designed and fabricated using $0.8{\mu}m$ SiGe BiCMOS process technology. Passive elements such as parallel-branch spiral inductor, metal-insulator-metal (MIM) capacitor and three types of resistors are all integrated in this process. This MPA is a two stage amplifier with all matching components and bias circuits integrated on-chip. A P1dB of 17.7 dBm has been measured with a power gain of 8.7 dB at 3.4 GHz with a total current consumption of 30 mA from a 3 V supply voltage at $25^{\circ}C$. The measured 3 dB bandwidth is 2.7 GHz and the maximum Power Added Efficiency (PAE) is 41 %, which are very good results for a fully integrated Medium PA. The fabricated circuit occupies a die area of $1.7mm{\times}0.8mm$.

• 한국공작기계학회논문집
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• 제17권2호
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• pp.110-113
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• 2008

Embedded capacitor technology is one of the effective packing technologies for further miniaturization and higher performance of electric packaging system. In this paper, the embedded capacitors were simulated and fabricated in 8-layered printed circuit board employing standard PCB processes. The composites of barium titanante($BaTiO_3$) powder and epoxy resin were employed for the dielectric materials in embedded capacitors. Theoretical considerations regarding the embedded capacitors have been paid to understand the frequency dependent impedance behavior. Frequency dependent impedance of simulated and fabricated embedded capacitors was investigated. Fabricated embedded capacitors have lower self resonance frequency values than that of the simulated embedded capacitors due to the increased parasitic inductance values. Frequency dependent capacitances of fabricated embedded capacitors were well matched with those of simulated embedded capacitors from the 100MHz to 10GHz range. Quality factor of 20 was observed and simulated at 2GHz range in the 10 pF embedded capacitors. Temperature dependent capacitance of fabricated embedded capacitors was presented.

• Journal of Power Electronics
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• 제15권2호
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• pp.389-398
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• 2015

This paper presents a 1.92 kW resonant converter for medium voltage applications that uses low voltage stress MOSFETs (500V) to achieve zero voltage switching (ZVS) turn-on. In the proposed converter, four MOSFETs are connected in series to limit the voltage stress of the power switches at half of the input voltage. In addition, three resonant circuits are adopted to share the load current and to reduce the current stress of the passive components. Furthermore, the transformer primary and secondary windings are connected in series to balance the output diode currents for medium power applications. Split capacitors are adopted in each resonant circuit to reduce the current stress of the resonant capacitors. Two balance capacitors are also used to automatically balance the input capacitor voltage in every switching cycle. Based on the circuit characteristics of the resonant converter, the MOSFETs are turned on under ZVS. If the switching frequency is less than the series resonant frequency, the rectifier diodes can be turned off under zero current switching (ZCS). Experimental results from a prototype with a 750-800 V input and a 48V/40A output are provided to verify the theoretical analysis and the effectiveness of the proposed converter.

• Journal of Power Electronics
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• 제17권3호
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• pp.579-589
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• 2017

In this study a new high step-up dc-dc converter is presented. The operation of the proposed converter is based on the capacitor switching and coupled inductor with a single active power switch in its structure. A passive voltage clamp circuit with two capacitors and two diodes is used in the proposed converter for elevating the converter's voltage gain with the recovered energy of the leakage inductor, and for lowering the voltage stress on the power switch. A switch with a low $R_{DS}$ (on) can be adopted to reduce conduction losses. In the generalized mode of the proposed converter, to reach a desired voltage gain, capacitor stages with parallel charge and series discharge techniques are extended from both sides of secondary side of the coupled inductor. The proposed converter has the ability to alleviate the reverse recovery problem of diodes with circuit parameters. The operating principle and steady-states analyses are discussed in detail. A 40W prototype of the proposed converter is implemented in the laboratory to verify its operation.

• 한국산업융합학회 논문집
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• 제22권3호
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• pp.373-379
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• 2019

Nowadays, the IoT portable electronic devices have become more useful and diverse, so they require various supply voltage levels to operate. This paper presents a DC-DC buck converter with pulse width modulation (PWM) for portable electronic devices. The proposed step-down DC-DC converter consists of passive elements such as capacitors, inductors, and resistors and an integrated chip (IC) for signal control to reduce power consumption and improves ripple voltage with the resolution. The proposed DC-DC converter is simulated and analyzed in PSPICE circuit design platform, and implemented on the prototype PCB board with a Texas Instruments LM5165 IC. The proposed buck converter is showed 92.6% of peak efficiency including a load current range of 4-10 mA, 3.29 mV of the voltage ripple at 5 V output voltage for the supply voltage 12 V. Measured and Simulated power efficiency are made good agreement with each other.

• Journal of Power Electronics
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• 제19권3호
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• pp.645-654
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• 2019

In this paper, a new high step up DC/DC converter with a modified super-lift technique is presented. The coupled inductor technique is combined with the super-lift technique to provide a tenfold or more voltage gain with a proper duty cycle and a low turn ratio. Due to a high conversion ratio, the voltage stress on the semiconductor devices is reduced. As a result, low voltage ultra-fast recovery diodes and low on resistance MOSFET can be used, which improves the reverse recovery problems and conduction losses. This converter employs a passive clamp circuit to recycle the energy stored in the leakage inductance. The proposed convertor features a high conversion ratio with a low turn ratio, low voltage stress, low reverse recovery losses, omission of the inrush currents of the switch capacitor loops, high efficiency, small volume and reduced cost. This converter is suitable for renewable energy applications. The operational principle and a steady-state analysis of the proposed converter are presented in details. A 200W, 30V input, 380V output laboratory prototype circuit is implemented to confirm the theoretical analysis.

• Journal of Advanced Marine Engineering and Technology
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• 제37권1호
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• pp.99-104
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• 2013

본 논문에서는 밀리미터파에의 응용을 위하여, 소형화된 다운컨버터 MMIC(monolithic microwave integrated circuit)를 제안하였다. 구체적으로는, RF(radio frequency) 및 LO(local oscilator) 신호의 격리특성을 위해 Lange 커플러가 삽입되었고, ${\lambda}$/4 전송선로를 연결하여 역위상 RF와 동위상 LO 신호가 믹서부분 FET(field effect transistor)의 게이트에 인가되었다. 또한, IF(intermediate frequency) 출력 신호의 역위상의 결합과 LO 누설신호 제거를 위하여 역위상 결합용 능동 벌룬이 출력 포트에 설치되었다. 측정 결과에 따르면, 제안된 다운컨버터 MMIC는 양호한 RF 특성을 보였다. 구체적으로, 63 GHz의 RF 주파수와 60.6 GHz의 LO 주파수에서 IF 출력 포트에서의 LO 누설 전력이 .25 dBc, RF와 LO의 격리특성은 18 dB를 보였으며, 변환 이득이 10.3 dB를 보였다. 따라서, SAW 필터와 같은 LO 제거용 off-chip 소자는 제안된 다운컨버터 MMIC에서는 필요하지 않게 되었다. 모든 능동소자와 수동소자가 GaAs MMIC 내부에 집적되었으며, 전체 사이즈는 $2.2{\times}1.4mm^2$ 로써 초소형 MMIC가 구현되었다.

• 한국전자파학회논문지
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• 제17권8호
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• pp.753-759
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• 2006

일반적으로 소형 안테나의 효율 측정에는 Wheeler cap 측정법이 많이 사용되지만 이 방법은 안테나의 동작 원리가 복잡할 경우 정확한 효율을 측정할 수 없는 단점이 있다. 그러나 고차 회로를 이용하여 안테나의 입력 임피던스를 정확히 나타낼 수 있으면 보다 정확한 안테나의 효율 측정이 가능하다. 본 논문에서는 변압기 회로를 이용하여 보다 쉽게 고차 회로를 구성할 수 있는 고차 회로 모델 구성법과 이를 최적화하는데 소요되는 시간단축과 정확성 향상을 위한 각 소자 값들의 효과적인 초기 값 설정 방법을 제안하였다. 고차 회로 모델의 각 소자 값들을 최적화하기 위해 유전자 알고리즘을 이용하였으며, 제안된 방법을 수동형 RFID 태그 안테나의 효율 측정을 통해 검증하였다.

• 한국전자파학회논문지
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• 제14권10호
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• pp.1044-1051
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• 2003

본 논문에서는 고유전율의 BMT 물질을 기판에 적용하여 기판 위에 소형화된 평면형 구조의 마이크로웨이브 듀플렉서를 설계, 제작하였다. Ba(Mg$_{1}$3/Ta$_{2}$3/)O$_3$(BMT)는 품질계수, 온도계수 측면에서 뛰어난 유전 특성을 보이며 유전상수가 23인 고유전 물질로서 회로의 크기를 줄이기 위한 기판에 적용하기가 적합하다. BMT 기판은 tape casting 공정에 의해 제작되었으며, 회로 패턴은 실크스크린을 이용하여 전극 패턴을 입혔다. Open-loop ring type의 듀플렉서를 BMT 기판 위에 설계, 제작하였으며 유전상수가 6.15인 상용 기판에 동일한 규격의 듀플렉서를 제작하여 비교한 결과, 특성의 저하 없이 약 80 % 정도 크기를 줄일 수 있었다. 따라서 제안된 BMT 기판은 예시된 듀플렉서 소형화를 구현하였으며, 마이크로웨이브 수동 소자의 소형화에 기여할 수 있을 것으로 기대된다.

• Journal of Advanced Marine Engineering and Technology
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• 제34권2호
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• pp.325-331
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• 2010

본 논문에서는 주기적 접지구조(PPGS)를 가지는 소형 단파장의 미앤더 선로를 GaAs MMIC(Monolithic Microwave Integrated Circuit) 상에 구현하였다. PPGS구조를 이용한 미앤더 선로는 기존의 미앤더 선로에 존재하던 용량 $C_a$와 함께 추가적인 용량 $C_b$를 가짐으로써 전체적인 용량이 커지게 되어, 단파장 특성을 보여주었다. 기존의 미앤더 선로는 주기적 구조가 아닌데 반해 PPGS 구조의 미앤더 선로는 주기적 구조이므로 $\beta$값이 큰 slow-wave가 존재하며, 이로 인해 종래의 미앤더 선로에 비해 선로 상에서 훨씬 더 큰 위상변화량을 보여준다. 본 논문에서는 상기 미앤더 선로의 특성을 실험적으로 고찰하여 PPGS 구조의 미앤더 선로를 병렬 인덕터로 사용할 경우, 기존 미앤더 선로를 사용할 때 보다 높은 인덕턴스 값을 가지므로 동일한 길이의 기존 선로보다 큰 인덕턴스 값을 가지는 정합 소자로써 사용할 수 있음을 확인하였다.