• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2006년도 추계학술대회 논문집 Vol.19
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• pp.57-58
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• 2006

In MIM (metal insulator metal) capacitor, Ru (ruthenium) has been suggested as new bottom electrode due to its excellent electrical performance, a low leakage of current and compatibility to the high dielectric constant materials. In this case of Ru bottom electrode, CMP (chemical mechanical planarization) process was needed m order to planarize and isolate the bottom electrode. In this study, the effect of chemical A on polishing and etching behavior was investigated as functions of chemical A concentration, abrasive particle and pressure. Chemical A was used as oxidant and etchant. The thickness of passivation layer on the treated Ru surface increased with the increase of chemical A concentration. The etch rate and removal rate of Ru were increased by the addition of chemical A. The removal rate was highest m slurry of pH 9 with the addition of 0.1 M chemical A and 2 wt% alumina at 4 psi. The maximum removal rate is about 80 nm/min.

• 한국표면공학회지
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• 제28권1호
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• pp.55-63
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• 1995

Alkaline solutions such as $NH_4$OH, choline and TMAH (($CH_3$)$_4$NOH) have been introduced in semiconductor wet processing of silicon wafers to control ionic and particulate impurities following etching in acidic solutions. These chemicals usually mixed with hydrogen peroxide and/or surfactants to control the etch rate of silicon. The highest etch rate was observed in $NH_4$OH solutions at a pH in alkaline solutions. It indicates that the etch rate depends on the content of $OH^{-}$ as well as cations of alkaline solutions. STM/AFM techniques were used to characterize the effect of alkaline solutions on silicon surface roughness. In SC1 (mixture of $NH_4$OH : $H_2$$O_2$ : $H_2$O) solutions, the reduction of the ammonium hydroxide proportion from 1 to 0.1 decreased the surface roughness ($R_{rms}$) from 6.4 to $0.8\AA$. The addition of $H_2$$O_2$ and surfactants to choline and TMAH reduced the values of $R_{p-v}$ and $R_{rms}$ significantly. $H_2$$_O2$ and surfactants added in alkaline solutions passivate bare silicon surfaces by the oxidation and adsorption, respectively. The passivation of surfaces in alkaline solutions resulted in lower etch rate of silicon thereby provided smoother surfaces.s.ces.s.

• International Journal of Fuzzy Logic and Intelligent Systems
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• 제1권1호
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• pp.87-94
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• 2001

Silicon nitride films grown by plasma-enhanced chemical vapor deposition (PECVD) are useful for a variety of applications, including anti-reflecting coatings in solar cells, passivation layers, dielectric layers in metal/insulator structures, and diffusion masks. PECVD systems are controlled by many operating variables, including RF power, pressure, gas flow rate, reactant composition, and substrate temperature. The wide variety of processing conditions, as well as the complex nature of particle dynamics within a plasma, makes tailoring SiN film properties very challenging, since it is difficult to determine the exact relationship between desired film properties and controllable deposition conditions. In this study, SiN PECVD modeling using optimized neural networks has been investigated. The deposition of SiN was characterized via a central composite experimental design, and data from this experiment was used to train and optimize feed-forward neural networks using the back-propagation algorithm. From these neural process models, the effect of deposition conditions on film properties has been studied. A recipe synthesis (optimization) procedure was then performed using the optimized neural network models to generate the necessary deposition conditions to obtain several novel film qualities including high charge density and long lifetime. This optimization procedure utilized genetic algorithms, hybrid combinations of genetic algorithm and Powells algorithm, and hybrid combinations of genetic algorithm and simplex algorithm. Recipes predicted by these techniques were verified by experiment, and the performance of each optimization method are compared. It was found that the hybrid combinations of genetic algorithm and simplex algorithm generated recipes produced films of superior quality.

• JSTS:Journal of Semiconductor Technology and Science
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• 제5권2호
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• pp.113-119
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• 2005

4H-SiC planar MESFETs were fabricated using ion-implantation on semi-insulating substrate without recess gate etching. A modified RCA method was used to clean the substrate before each procedure. A thin, thermal oxide layer was grown to passivate the surface and then a thick field oxide was deposited by CVD. The fabricated MESFET showed good contact properties and DC/RF performances. The maximum oscillation frequency of 34 GHz and the cut-off frequency of 9.3 GHz were obtained. The power gain was 10.1 dB and the output power of 1.4 W was obtained for 1 mm-gate length device at 2 GHz. The fabricated MESFETs showed the charge trapping-free characteristics and were characterized by the extracted small-signal equivalent circuit parameters.

• 한국전기전자재료학회논문지
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• 제18권6호
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• pp.515-520
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• 2005

CMP(chemical mechanical polishing) process has been attracted as an essential technology of multi-level interconnection. Also CMP process got into key process for global planarization in the chip manufacturing process. In this study, potentiodynamic polarization was carried out to investigate the influences of $H_2O_2$ concentration and metal oxide formation through the passivation on tungsten and titanium. Fortunately, the electrochemical behaviors of tungsten and titanium are similar, an one may expect. As an experimental result, electrochemical corrosion of the $5\;vol\%\;H_2O_2$ concentration of tungsten and titanium films was higher than the other concentrations. According to the analysis, the oxidation state and microstructure of surface layer were strongly influenced by different oxidizer concentration. Moreover, the oxidation kinetics and resulting chemical state of oxide layer played critical roles in determining the overall CMP performance. Therefore, we conclude that the CMP characteristics tungsten and titanium metal layer including surface roughness were strongly dependent on the amounts of hydrogen peroxide oxidizer.

• 한국진공학회:학술대회논문집
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• 한국진공학회 2012년도 제42회 동계 정기 학술대회 초록집
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• pp.541-541
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• 2012

InP quantum dots capped by myristic acid (InP-MA QDs) were synthesized by a typical hot injection method using MA as stablizing agent. The current density across the InP-MA QDs thin film which was fabricated by spin-coating method is about $10^{-4}A/cm^2$ at the electric field of 0.1 MV/cm from I-V measurement on a metal-insulator-metal (MIM) device. The low conductivity of the InP-MA QDs thin film is interpreted as due to the long interdistances among the dots governed by the MA molecules. Therefore, replacing the MA with thioacetic acid (TAA) by biphasic ligand exchange was conducted in order to obtain TAA capped InP QDs (InP-TAA). InP-TAA QDs were designed due to: 1) the TAA is very short molecule; 2) the thiolate groups on the surface of the InP-TAA QDs are expected to undergo condensation reaction upon thermal annealing which connects the QDs within the QD thin film through a very short linker -S-; and 3) TAA provides better passivation to the QDs both in the solution and thin film states which minimizing the effect of surface trapping states.

• 한국표면공학회지
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• 제51권3호
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• pp.185-190
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• 2018

Dopant-free silicon heterojunction solar cells using Transition Metal Oxide(TMO) such as Molybdenum Oxide($MoO_X$) and Vanadium Oxide($V_2O_X$) have been focused on to increase the work function of TMO in order to maximize the work function difference between TMO and n-Si for a high-efficiency solar cell. One another way to increase the work function difference is to control the silicon wafer resistivity. In this paper, dopant-free silicon heterojunction solar cells were fabricated using the wafer with the various resistivity and analyzed to understand the effect of n-Si work function. As a result, it is shown that the high passivation and junction quality when $V_2O_X$ deposited on the wafer with low work function compared to the high work function wafer, inducing the increase of higher collection probability, especially at long wavelength region. the solar cell efficiency of 15.28% was measured in low work function wafer, which is 34% higher value than the high work function solar cells.

• 한국표면공학회:학술대회논문집
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• 한국표면공학회 2018년도 춘계학술대회 논문집
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• pp.56-56
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• 2018

Transparent conductive oxides (TCOs) have attracted attention due to their high electrical conductivity and optical transparency in the visible region. Consequently, TCOs have been widely used as electrode materials in various electronic devices such as flat panel displays and solar cells. Previous studies on TCOs focused on their electrical and optical performances; there have been numerous attempts to improve these properties, such as chemical doping and crystallinity enhancement. Recently, due to rapidly increasing demand for flexible electronics, the academic interest in the mechanical stability of materials has come to the fore as a major issue. In particular, long-term stability under bending is a crucial requirement for flexible electrodes; however, research on this feature is still in the nascent stage. Hydrogen-incorporated amorphous In-Sn-O (a-ITO) thin films were fabricated by introducing hydrogen gas during deposition. The hydrogen concentration in the film was determined by secondary ion mass spectrometry and was found to vary from $4.7{\times}10^{20}$ to $8.1{\times}10^{20}cm^{-3}$ with increasing $H_2$ flow rate. The mechanical stability of the a-ITO thin films dramatically improved because of hydrogen incorporation, without any observable degradation in their electrical or optical properties. With increasing hydrogen concentration, the compressive residual stress gradually decreased and the subgap absorption at around 3.1 eV was suppressed. Considering that the residual stress and subgap absorption mainly originated from defects, hydrogen may be a promising candidate for defect passivation in flexible electronics.

• 한국전기전자재료학회논문지
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• 제16권12S호
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• pp.1181-1186
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• 2003

Chemical Mechanical Polishing (CMP) is an essential dielectric planarization in multilayer microelectronic device fabrication. In the CMP process, it is necessary to minimize the extent of surface defect formation while maintaining good planarity and optimal material removal rates. The polishing mechanism of W-CMP process has been reported as the repeated process of passive layer formation by oxidizer and abrasion action by slurry abrasives. Thus, it is important to understand the effect of oxidizer on W passivation layer, in order to obtain higher removal rate (RR) and very low non-uniformity (NU %) during W-CMP process. In this paper, we compared the effects of oxidizer or W-CMP process with three different kind of oxidizers with 5 wt% hydrogen peroxide such as Fe(NO$_3$)$_3$, H$_2$O$_2$, and KIO$_3$. The difference in removal rate and roughness of W in stable and unstable slurries are believed to caused by modification in the mechanical behavior of Al$_2$O$_3$ particles in presence of surfactant stabilizing the slurry.

• Journal of Electrochemical Science and Technology
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• 제2권1호
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• pp.8-13
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• 2011

Interfacial compatibility between the Si-Cu electrode and diluted ionic liquid electrolyte containing 50 vol.% of 1M lithium bis(trifluoromethanesulfonyl)imide (LiTFSI)/1-methyl-1-propylpyrrolidinium bis(trifluoromethylsulfonyl)imide (MPP-TFSI) and 50 vol.% dimethyl carbonate (DMC) in a lithium cell and dilution effect on surface chemistry are examined. ex-situ ATR FTIR analysis results reveal that the surface of the Si-Cu electrode cycled in the diluted ionic liquid electrolyte is effectively passivated with the SEI layer mainly composed of carboxylate salts-containing polymeric compounds produced by the decomposition of DMC. Surface species by the decomposition of TFSI anion and MPP cation are found to be relatively in a very low concentration level. Passivation of electrode surface with the SEI species contributes to protect from further interfacial reactions and to preserve the electrode structure over 200 cycles, delivering discharge capacity of > 1670 $mAhg^{-1}$ and capacity retention of 88% of maximum discharge capacity.