• Current Photovoltaic Research
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• 제12권2호
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• pp.31-36
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• 2024

Passivating contacts are a promising technology for achieving high efficiency Si solar cells by reducing direct metal/Si contact. Among them, a polysilicon (poly-Si) based passivating contact solar cells achieve high passivation quality through a tunnel oxide (SiO_x) and poly-Si. In poly-Si/SiO_x based solar cells, the passivation quality depends on the amount of dopant in-diffused into the bulk-Si. Therefore, our study fabricated cells by inserting silicon oxide (SiO₂) as a doping barrier before doping and analyzed the barrier effect of SiO₂. In the experiments, p⁺ poly-Si was formed using spin on dopant (SOD) method, and samples ware fabricated by controlling formation conditions such as existence of doping barrier and poly-Si thickness. Completed samples were measured using quasi steady state photoconductance (QSSPC). Based on these results, it was confirmed that possibility of achieving high V_oc by inserting a doping barrier even with thin poly-Si. In conclusion, an improvement in implied V_oc of up to approximately 20 mV was achieved compared to results with thicker poly-Si results.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2008년도 하계학술대회 논문집 Vol.9
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• pp.546-546
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• 2008

Copper (Cu) Chemical mechanical polishing (CMP) has been an essential process for Cu wifing of DRAM and NAND flash memory beyond 45nm. Copper has been employed as ideal material for interconnect and metal line due to the low resistivity and high resistant to electro-migration. Damascene process is currently used in conjunction with CMP in the fabrication of multi-level copper interconnects for advanced logic and memory devices. Cu CMP involves removal of material by the combination of chemical and mechanical action. Chemicals in slurry aid in material removal by modifying the surface film while abrasion between the particles, pad, and the modified film facilitates mechanical removal. In our research, we emphasized on the role of chemical effect of slurry on Cu CMP, especially on the effect of amine functional group on removal rate selectivity between Cu and Tantalum-nitride (TaN) film. We investigated the two different kinds of complexing agent both with amine functional group. On the one hand, Polyacrylamide as a polymer affected the stability of abrasive, viscosity of slurry and the corrosion current of copper film especially at high concentration. At higher concentration, the aggregation of abrasive particles was suppressed by the steric effect of PAM, thus showed higher fraction of small particle distribution. It also showed a fluctuation behavior of the viscosity of slurry at high shear rate due to transformation of polymer chain. Also, because of forming thick passivation layer on the surface of Cu film, the diffusion of oxidant to the Cu surface was inhibited; therefore, the corrosion current with 0.7wt% PAM was smaller than that without PAM. the polishing rate of Cu film slightly increased up to 0.3wt%, then decreased with increasing of PAM concentration. On the contrary, the polishing rate of TaN film was strongly suppressed and saturated with increasing of PAM concentration at 0.3wt%. We also studied the electrostatic interaction between abrasive particle and Cu/TaN film with different PAM concentration. On the other hand, amino-methyl-propanol (AMP) as a single molecule does not affect the stability, rheological and corrosion behavior of the slurry as the polymer PAM. The polishing behavior of TaN film and selectivity with AMP appeared the similar trend to the slurry with PAM. The polishing behavior of Cu film with AMP, however, was quite different with that of PAM. We assume this difference was originated from different compactness of surface passivation layer on the Cu film under the same concentration due to the different molecular weight of PAM and AMP.

• 한국분말재료학회지
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• 제13권5호
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• pp.327-335
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• 2006

In the development of new hydrogen absorbing materials for a next generation of metal hydride electrodes for rechargeable batteries, metastable Mg-Ni-based compounds find currently special attention. Amor phous-nanocrystalline $Mg_{63}Ni_{30}Y_7$ and $Mg_{50}Ni_{30}Y_{20}$ alloys were produced by mechanical alloying and melt-spinning and characterized by means of XRD, TEM and DSC. On basis of mechanically alloyed Mg-Ni-Y powders, complex hydride electrodes were fabricated and their electrochemical behaviour in 6M KOH (pH=14,8) was investigated. The electrodes made from $Mg_{63}Ni_{30}Y_7$ powders, which were prepared under use of a SPEX shaker mill, with a major fraction of nanocrystalline phase reveal a higher electrochemical activity far hydrogen reduction and a higher maximum discharge capacity (247 mAh/g) than the electrodes from alloy powder with predominantly amorphous microstructure (216 mAh/g) obtained when using a Retsch planetary ball mill at low temperatures. Those discharge capacities are higher that those fur nanocrystalline $Mg_2Ni$ electrodes. However, the cyclic stability of those alloy powder electrodes was low. Therefore, fundamental stability studies were performed on $Mg_{63}Ni_{30}Y_7$ and $Mg_{50}Ni_{30}Y_{20}$ ribbon samples in the as-quenched state and after cathodic hydrogen charging by means of anodic and cathodic polarisation measurements. Gradual oxidation and dissolution of nickel governs the anodic behaviour before a passive state is attained. A stabilizing effect of higher fractions of yttrium in the alloy on the passivation was detected. During the cathodic hydrogen charging process the alloys exhibit a change in the surface state chemistry, i.e. an enrichment of nickel-species, causing preferential oxidation and dissolution during subsequent anodization. The effect of chemical pre-treatments in 1% HF and in $10\;mg/l\;YCl_3/1%\;H_2O_2$ solution on the surface degradation processes was investigated. A HF treatment can improve their anodic passivation behavior by inhibiting a preferential nickel oxidation-dissolution at low polarisation, whereas a $YCl_3/H_2O_2$ treatment has the opposite effect. Both pre-treatment methods lead to an enhancement of cathodically induced surface degradation processes.

• 한국진공학회:학술대회논문집
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• 한국진공학회 2012년도 제43회 하계 정기 학술대회 초록집
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• pp.211-211
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• 2012

Using spin-polarized density-functional theory calculations, we find that the existence of either Peierls instability or antiferromagnetic spin ordering is sensitive to hydrogen passivation near the step. As hydrogens are covered on the terrace, the dangling bond electrons are localized at the step, leading to step-induced states. We investigate the competition between charge and spin orderings in dangling-bond (DB) wires of increasing lengths fabricated on an H-terminated vicinal Si(001) surface. We find antiferromagnetic (AF) ordering to be energetically much more favorable than charge ordering. The energy preference of AF ordering shrinks in an oscillatory way as the wire length increases. This oscillatory behavior can be interpreted in terms of quantum size effects as the DB electrons fill discrete quantum levels.

• 한국표면공학회:학술대회논문집
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• 한국표면공학회 2013년도 춘계학술대회 논문집
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• pp.170-170
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• 2013

We present a novel etching technique for 2-dimentional (2-D) hexagonal boron nitride (h-BN) by using capacitively coupled plasma (CCP) of oxygen combined with a post-treatment by de-ionized (DI) water. Oxygen CCP etching process for h-BN has been systematically studied. It is found that a passivation layer was generated to obstruct further etching while it can be easily and radically removed by DI water. An essential cleaning effect also has been observed in the etching process, organic residues are successfully removed and the surface roughness has much decreased. Considering h-BN is the most important 2-D dielectric material and its potential application for graphene to silicon-based electronic devices, such an etching method can be widely used to control the 2-D h-BN thickness and improve the surface quality.

• Transactions on Electrical and Electronic Materials
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• 제16권5호
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• pp.285-289
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• 2015

We prepared silver Schottky contacts to O-polar and nonpolar m-plane bulk ZnO wafers. Then, by considering various transport models, we performed a comparative analysis of the current transport properties of Ag/bulk ZnO Schottky diodes, which were measured at 300, 200, and 100 K. The fitting of the forward bias current-voltage (I-V) characteristics revealed that the tunneling current is dominant as the transport component in both the samples. Compared to thermionic emission (TE), a stronger contribution of tunneling current was observed at low temperature. The reverse bias I-V characteristics were well fitted with the thermionic field emission (TFE) in both the samples. The presence of acceptor-like adsorbates, such as O₂ and H₂O, modulated the surface conductive state of ZnO, thereby affecting the tunneling effect. The degree of activation/passivation of acceptor-like adsorbates might be different in both the samples owing to their different surface morphologies and surface defects (e.g., oxygen vacancies).

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2010년도 춘계학술대회 논문집
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• pp.42-42
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• 2010

We have characterized the previously undescribed parameters for engineering the electrical properties of single-walled carbon nanotube (SWCNT) films for technological applications. The surface tension of the top coating passivation material and matching coefficients of thermal expansion for the substrate and carbon nanotube network are two crucial parameters for the fabrication of reliable and highly conductive single-walled carbon nanotube network thin films.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2010년도 하계학술대회 논문집
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• pp.368-368
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• 2010

Using TFTs crystallized by MICC and ELA, electron mobility and threshold voltage were measured according to various substrate temperature from $-40^{\circ}C$ to $100^{\circ}C$. Basic curve, $V_G-I_D$, is also measured under various stress time from 1s to 10000s. Consequently, due to the passivation effect and number of grains, mobility of MICC is varied in the range of -8% ~ 7.6%, while that of ELA is varied from -11.04% ~ 13.25%. Also, since $V_G-I_D$ curve is dominantly affected by grain size, active layer interface, the graph remained steady under the various gate bias stress time from 1s to 10000s. This proves the point that MICC can be alternative technic to ELA.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2010년도 하계학술대회 논문집
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• pp.278-278
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• 2010

We have characterized the previously undescribed parameters for engineering the electrical properties of single-walled carbon nanotube (SWCNT) films for technological applications. The surface tension of the top coating passivation material and matching coefficients of thermal expansion for the substrate and carbon nanotube network are two crucial parameters for the fabrication of reliable and highly conductive single-walled carbon nanotube network thin films.

• 대한기계학회논문집A
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• 제33권4호
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• pp.425-429
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• 2009

The protection for copper tarnish was developed by surface treatment method and volatile corrosion inhibiting (VCI) technology. The performance of surface treatment and VCI material is also examined in simulated test environment. Benzotriazole (BTAH) solution that contained molybdate showed best performance than others. Usage of VCI materials with surface treatment was more effective. The protection film foamed on the surface of copper was investigated by auger electron spectroscopy (AES) and X-ray photoelectron spectroscopy (XPS). Molybdate does not participate in the formation of the protective film but promotes the passivation effect. This facilitates the stabilization of the cuprous oxide film, and strengthens the adsorption of BTAH.