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As/P Exchange Reaction of InAs/InGaAsP/InP Quantum Dots during Growth Interruption

  • Choe, Jang-Hui;Han, Won-Seok;Jo, Byeong-Gu;Song, Jeong-Ho;Jang, Yu-Dong;Lee, Dong-Han
    • Proceedings of the Korean Vacuum Society Conference
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    • 2012.02a
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    • pp.146-147
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    • 2012
  • InP 기판위에 자발성장법으로 성장된 InAs 양자점은 $1.55{\mu}m$ 영역에서 발진하는 양자점 반도체 레이저 다이오드 및 광 증폭기를 제작할 수 있기 때문에 많은 관심을 받고 있다. 광통신 대역의 $1.55{\mu}m$ 반도체 레이저 다이오드 및 광 증폭기 분야에서 InAs/InP 양자점이 많은 관심을 받고 있으나, InAs/GaAs 양자점에 비해 제작이 어려운 단점을 가지고 있다. InAs/InP 양자점은 InAs/GaAs 양자점에 비해 격자 불일치가 작아 양자점의 크기가 크고 특히 As 계 박막과 P 계박막의 계면에서 V 족 원소 교환 반응으로 계면 특성 저하가 발생하여 성장이 까다롭다. As 과 P 간의 교환반응은 성장온도와 V/III 에 의해 크게 영향을 받는 것으로 보고되었다. 그러나, P계 InGaAsP 박막 위에 InAs 성장 시 발생하는 As/P 교환반응에 대한 연구는 매우 적다. 본 연구에서는 InGaAsP 박막 위에 InAs 양자점 성장 시 GI (growth interruption)에 의한 As/P 교환반응이 InAs 양자점의 형상 및 광학적 특성에 미치는 영향을 연구하였다. 시료는 수직형 저압 Metal Organic Chemical Vapor Deposition (MOCVD)를 이용하여 $520^{\circ}C$의 온도에서 성장하였다. 그림1(a) 구조의 양자점은 InP (100) 기판위에 InP buffer layer를 성장한 후 InP와 격자상수가 일치하는 $1.1{\mu}m$ 파장의 InGaAsP barrier를 50 nm 성장하였다. 그 후 As 분위기 하에서 다양한 GI 시간을 주었고 그 위에 InAs 양자점을 성장하였다. 양자점 성장 후 InGaAsP barrier를 50 nm, InP capping layer를 50 nm 성장하였다. AFM측정을 위해 InP capping layer 위에 동일한 GI 조건의 InAs/InGaAsP 양자점을 성장하였고 양자점 성장 후 As분위기 하에 온도를 내려주었다. 그림1(b) 구조의 양자점은 그림1(a) 와 모든 조건은 동일하나 InAs 양자점과 InGaAsP barrier 사이에 GaAs 2ML를 삽입한 구조이다. 양자점 형상 특성 평가는 Atomic force microscopy를 이용하였으며, 광특성 분석은 Photoluminescence를 이용하였다.

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Comparative Analysis of Lighting Intensity, Leaf Temperature, Transpiration Rate, and Vapor Pressure Deficit between the Top and Branching Point of Stem during Growing Period of Paprika Plant (파프리카 생장에 따른 줄기의 정부와 하부 간 광량, 엽온, 증산속도 및 수증기압포차 비교 분석)

  • Seung Mi Woo;Ho Cheol Kim
    • The Journal of the Convergence on Culture Technology
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    • v.9 no.6
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    • pp.1097-1101
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    • 2023
  • As paprika plants grew in a glass greenhouse from November 2022 to March 2023, the amount of light at each plant height, leaf temperature, transpiration rate, and water vapor pressure were measured. Accumulated leaf temperature was higher at the top of the plant than at the bottom. Over time, the leaf temperature measured around 11-13 AM changed from 26.55→23.21→22.80→26.67℃ in the lower part (pL), and from 26.52→24.48→24.55→27.78℃ in the upper part (pAs). And VPD changed from 1.45→0.94→0.74→1.46kPa in pL and from 1.11→0.86→0.71→1.28kPa in pAs. Accordingly, the transpiration rate changed from 4.25→0.17→4.08→0.52mmol·m-2·s-1 in pL, 7.61→2.45→1.94→4.39→0.52mmol·m-2·s-1 in pAs, and from pAs to pL. It was significantly higher than The difference between the lower and upper parts (pL-pAs) was higher in pAs than pL in leaf temperature, light intensity, and transpiration rate, but the water vapor pressure difference was higher in pL. In this way, paprika shows differences in the environment and photosynthetic factors between the upper and lower parts during the cultivation period, so it is judged that this needs to be taken into consideration in future research.

Optimization of multiple-quantum-well structures in 1.55.$\mu$ InGaAsP/InGaAsP SL-MQW DFB-LD for high-speed direct modulation (고속직접변조를 위한 1.55.$\mu$. InGaAsP/InGaAsP SL-MQW DFB-LD의 양자우물구조의 최적화)

  • 심종인;한백형
    • Journal of the Korean Institute of Telematics and Electronics D
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    • v.34D no.3
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    • pp.60-73
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    • 1997
  • By introducing a compressive-strained quanternary InGaAsP quantum-wells instead of a conventional ternary InGaAs quantum-wells in 1.55.mu.m DFB-LD, the lasing performances canb e improved and the problems caused by the thickness non-uniformity and the compositional abruptness among the hetero-interpaces canb e relaxed. In this paper, we investigated an iptimum InGaAsP/InGaAsP multiple-quantum-well(MQW) structure as an active layer in a direct-modulated 1.55.mu. DFB-LD from the view point of threshold current, chirping charcteristics, and resonance frequency. The optimum compressive-strained MQW structure was revealed as InGaAsP/InGaAsP structure with strain amount of about 1.2%, number of wells $N_{w}$ of 7, well width $L_{w}$ of 58.agns.. The threshold current density J of 500A/c $m^{2}$, the linewidth enhancement factor a of 1.8, and differential resonance frequency of d $f_{r}$/d(I-I)$^{1}$2/=2GHz/(mA)$^{1}$2/(atI=2 $I_{th}$) were expected in 1.55.mu.m .gamma./4-shifted DFB-LD with the cavity length of 400.mu.m long and kL value of 1.25. These values are considerably improved ones compared to those of 1.55um DFB-LD with InGaAs/InGaAsP MQW which have enhancement factor and the resonance frequence frequency by the detuning of lasing wavelength and gain-peak wavelength. It was found that the linewidth enhancement factor of 20% and differential resonance frequency of 35% without the degradation of the threshold current density could be enhanced in the range of -15nm~-20nm detuning which can be realized by controlling the thickness and Incomposition of InGaAsP well. well.and Incomposition of InGaAsP well. well.

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Parametric Model을 이용한 InAsxP1-x 박막의 유전함수 연구

  • Byeon, Jun-Seok;Choe, Jun-Ho;Barange, Nilish;Diware, Mangesh S.;Kim, Yeong-Dong
    • Proceedings of the Korean Vacuum Society Conference
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    • 2012.08a
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    • pp.333-333
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    • 2012
  • III-V 족 화합물 반도체 물질인 $InAs_xP_{1-x}$는 다양한 광전자 소자와 빠른 속도의 전자 소자로써의 사용 가능성으로 각광받고 있다. 이러한 $InAs_xP_{1-x}$를 소자 제작에 이용하기 위해서는 임의의 As 함량에 따른 InAsP 물질의 정확한 광학적 특성 분석이 필요하다. 따라서 본 연구에서는 1.5~6.0 eV 에너지 구간에서 $InAs_xP_{1-x}$ ($0{\leq}{\times}{\leq}1$) 화합물의 임의의 As 함량에 따른 유전함수를 보고하고자 한다. MBE (molecular beam epitaxy)를 이용하여 InP 기판 위에 성장시킨 $InAs_xP_{1-x}$ (x = 0.000, 0.13, 0.40, 0.60, 0.80, 1.000) 박막을 타원편광분석법을 이용하여 측정하였고, 이 때 화학적 에칭을 통해 산화막 층을 제거하여 순수한 유전함수 ${\varepsilon}$을 얻을 수 있었다. 측정된 유전함수 분석은 parametric 모델을 이용하였으며, parametric 모델은 Gaussian-broadened polynomial들의 합으로서 반도체 물질의 유전함수를 정확히 기술하는 분석법이다. Parametric 모델을 통해 얻어진 각각의 변수들을 As 조성비 x에 대한 다항식으로 피팅하였고, 그 결과 임의의 조성비에 대한 $InAs_xP_{1-x}$ ($0{\leq}{times}{\leq}1$)의 유전함수를 얻어낼 수 있었다. 본 연구 결과는 물질의 실시간 성장 모니터링이나 다층구조 분석, 광소자의 제작 등에 유용한 정보로 이용될 수 있을 것이다.

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hnRNPK-regulated PTOV1-AS1 modulates heme oxygenase-1 expression via miR-1207-5p

  • Shin, Chang Hoon;Ryu, Seongho;Kim, Hyeon Ho
    • BMB Reports
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    • v.50 no.4
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    • pp.220-225
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    • 2017
  • Antisense transcripts were initially identified as transcriptional noise, but have since been reported to play an important role in the quality control of miRNA functions. In this report, we tested the hypothesis that heterogeneous nuclear ribonucleoprotein K (hnRNPK) regulates miRNA function via competitive endogenous RNAs, such as pseudogenes, long non-coding RNAs, and antisense transcripts. Based on analyses of RNA sequencing data, the knockdown of hnRNPK decreased the antisense PTOV1-AS1 transcript which harbors five binding sites for miR-1207-5p. We identified heme oxygenase-1 (HO-1) mRNA as a novel target of miR-1207-5p by western blotting and Ago2 immunoprecipitation. The knockdown of hnRNPK or PTOV1-AS1 suppressed HO-1 expression by increasing the enrichment of HO-1 mRNA in miR-1207-5p-mediated miRISC. Downregulation of HO-1 by a miR-1207-5p mimic or knockdown of hnRNPK and PTOV1-AS1 inhibited the proliferation and clonogenic ability of HeLa cells. Taken together, our results demonstrate that hnRNPK-regulated PTOV1-AS1 modulates HO-1 expression via miR-1207-5p.

Potent Inhibition of Human Cytochrome P450 1 Enzymes by Dimethoxyphenylvinyl Thiophene

  • Lee, Sang-Kwang;Kim, Yongmo;Kim, Mie-Young;Kim, Sanghee;Chun, Young-Jin
    • Archives of Pharmacal Research
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    • v.27 no.2
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    • pp.199-205
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    • 2004
  • Cytochrome P450 (P450) 1 enzymes such as P450 1A1, 1A2, and 181 are known to be involved in the oxidative metabolism of various procarcinogens and are regarded as important target enzymes for cancer chemoprevention. Previously, several hydroxystilbene compounds were reported to inhibit P450 1 enzymes and were rated as candidate chemopreventive agents. In this study, we investigated the inhibitory effect of 2-[2-(3,5-dimethoxyphenyl)vinyl]-thiophene (DMPVT), produced from the chemical modification of oxyresveratrol, on the activities of P450 1 enzymes. The inhibitory potential by DMPVT on the P450 1 enzyme activity was evaluated with the Escherichia coli membranes of the recombinant human cytochrome P450 1A1, 1A2, or 1B1 coexpressed with human NADPH-P450 reductase. DMPVT significantly inhibited ethoxyresorufin O-deethylation (EROD) activities with $IC_{50}$ values of 61, 11, and 2 nM for 1A1, 1A2, and 1B1, respectively. The EROO activity in OMBA-treated rat lung microsomes was also significantly inhibited by OMPVT in a dose-dependent manner. The modes of inhibition by DMPVT were non-competitive for all three P450 enzymes. The inhibition of P450 1B1-mediated EROD activity by OMPVT did not show the irreversible mechanism-based effect. The loss of EROD activity in P450 1B1 with OMPVT incubation was not blocked by treatment with the trapping agents such as glutathione, N-acetylcysteine, or dithiothreitol. Taken together, the results suggested DMPVT to be a strong noncompetitive inhibitor of human P450 1 enzymes that should be considered as a good candidate for a cancer chemopreventive agent in humans.

The Characteristics of GaAsP/GaP Epitaxial Layer on the epitaxial growth temperature (성장 온도에 따른 GaAsP/GaP Epitaxial Layer의 특성)

  • Lee, Eun-Cheol;Ra, Yong-Choon;Eom, Moon-Jong;Lee, Cheol-Jin;Sung, Man-Young
    • Proceedings of the KIEE Conference
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    • 1997.11a
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    • pp.317-319
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    • 1997
  • We have studied the properties of $GaAs_{1-x}P_x$ epitaxial films on the GaP using VPE method by CVD. The surface carrier concentration and PL power increased with increasing the epitaxial temperature while PL wave length decreased. The Power out of the LED with $GaAs_{1-x}P_x$/GaP structure decreased with increasing the epitaxial temperature while the forward voltage of the LED increased. Specially, The LED of $GaAs_{1-x}P_x$/GaP structure represents good electrical and optical properties when the $GaAs_{1-x}P_x$ layer was epitaxially grown at $810^{\circ}C$.

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Characterization of a Putative F-box Motif in Ibd1p/Bfalp, a Spindle Checkpoint Regulator of Budding Yeast Saccharomyces cerevisiae

  • Lee, Kyum-Jung;Hyung-Seo;Kiwon Song
    • Journal of Microbiology
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    • v.39 no.4
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    • pp.286-292
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    • 2001
  • During mitosis. the proper segregation of duplicated chromosomes is corrdinated by a spindle check-point. The bifurcated spindle checkpoint blocks cell cycle progression at metaphase by monitoring unattached kinetochores and inhibits mitotic exit in response to the misorientation of the mitotic spin- dle Ibd1p/Bfa1p is a spindle checkpoint regulator of budding yeast in the Bub2p checkpoint pathway for mitotic exit and its disruption abolishes mitotic arrest when proper organization of the mitotic spin-dls inhibited. Ibd1p/Bfa1p localizes to the spindle pole body, a microtublue-organizing center in yeast, and its overexpression arrests the cell cycle in 80% of cells with an enlarged budy at mitosis and in 20 % of cells with multiple buds. In this study, we found that the C-terminus of Ibd1p/Bfa1p phys-ically interacts with Skp1p, a key component of SCF (Skp1/cullin/F-box) complex for ubiquition-medi-ated proteolysis of cel cycle regulatores as well as an evolutionally conserved kinetochore protein for cell cycle progression. A putative F-box motif was found in the C-terminus of Ibd1p/Bfa1p and its function was investigated by making mutants of conserved residues in the motif. These Ibd1p/Bfa1p mutants of a putative F-box interacted with SKp1p in vitro by two-hybrid assays as wild type Ibd1p/Bfa1p. Also these Ibd1p/Bfa1p utants displayed the overexpression phenotypes of wild type Ibd1p, when over-expressed under inducible promoters . These results suggest that a putative F-box motif of Ibd1p/Bfa1p is not essential for the interaction with SKp1p and its function in mitotic exit and cytokinesis.

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A Study on Basic Investigation for Quality Improvement of Raw-Silk A Study on the Dissolving Behavior of Sericin in the Cocoon Shell and Pupa Protein (Bombyx mori L.) (Part III) (생사 품위향상을 위한 기초조사 연구 견층 Sericin과 용체 단백질의 용해거동에 관한 연구(III))

  • 임영우
    • Journal of Sericultural and Entomological Science
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    • v.17 no.2
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    • pp.161-170
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    • 1975
  • This study is to investigate the content of crude protein intruded in the sericin of cocoon shell and pupa by treatment of buffer solution (pH 1 to pH 13) 20 ml per 1 gram for 30 and 60 minutes at 30$^{\circ}C$, 60$^{\circ}C$ and 100${\pm}$2$^{\circ}C$, respectively. The results obtained are summarized as follows. 1. The quantity of total crude protein obtained from cocoon shell and pupa by treatment during 30 minutes at 30$^{\circ}C$ was dissolved as the largest quantity of 11.874 mg/g at pH 1 and l5.93mg/g at pH 13, but dissolved the smallest quantity 1.75g/g at pH 5 as known. and tile quantity of crude protein treated for 60 minutes is 13.437mg/g at pH 1 and 22.50mg/g at pH 13. Also, the smallest quantity is 2. 813mg/g at pH 5 as known. 2. By the treatment during 30 minutes at 60$^{\circ}C$, the dissolved largest quantity was 13.12mg/g at pH 1 and 21.875 mg/g at pH 13, but the smallest quantity is 2.375mg/g at pH 5 as known After treatment for 60 minutes at 60$^{\circ}C$, the dissolved largest quantity was 17.500 mg/g at pH 1 and 31.56mg/g at pH 13, bu the smallest quantity is 3.849 mg/g at pH 5. 3. The dissolved crude protein from the cocoon shell and pupa by treatment for 30 minutes at 100${\pm}$2$^{\circ}C$ was the largest quantity of 147.000mg/g at pH 1 and 398. 125mg/g at pH 13, but the smallest quantity is 75.00mg/g at pH 5 as known. After treatment for 60 minutes at 100${\pm}$2$^{\circ}C$, the largest quantity was 253.76 mg/g at pH 1 and 460.625mg/g at pH 13, but the smallest quantity is 139.375mg/g at pH 5 as known. 4. The dissolved crude protein from the cocoon shell and pupa was not different in quantity by treatment at 30$^{\circ}C$ or 60$^{\circ}C$. But dissolved crude protein was large quantity from cocoon shell more than pupa, as known. 5. The treatment of cocoon shell and pupa during 60 minutes at 100${\pm}$20$^{\circ}C$ was increased to the dissolved largest quantity of crude protein of 19.20% at pH 1 and 22. 18% at pH 13 from the cocoon shell and 6. 12% at pH, an d 23.87% at pH 13 from the pupa. But dissolved crude protein was increased to the larger quantity from pupa more than cocoon shell.

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Surface Photovoltage Characteristics of ${In_{0.5}}({Ga_{1-x}}{Al_x})_{0.5}P$/GaAs Double Heterostructures (${In_{0.5}}({Ga_{1-x}}{Al_x})_{0.5}P$/GaAs 이중 이종접합 구조에 대한 표면 광전압 특성)

  • Kim, Ki-Hong;Choi, Sang-Soo;Bae, In-Ho;Kim, I n-Soo;Park, Sung-Bae
    • Korean Journal of Materials Research
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    • v.11 no.8
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    • pp.655-660
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    • 2001
  • Surface photovoltage spectroscopy was used to study $In_{0.5}(Ga_{1-x}Al_x)_{0.5}P/GaAs$ grown by metalorganic chemical vapor deposition(MOCVD). Energy gap related transition in GaAs and $In_{0.5}(Ga_{1-x}Al_x)_{0.5}P$ were observed. By measuring the frequency dependence of $In_{0.5}(Ga_{1-x}Al_x)_{0.5}P/GaAs$, we observed that SPV line shape does not chance, whereas the amplitude change. This results is due to the difference in the lifetimes of the photocarriers in GaAs and in $In_{0.5}(Ga_{1-x}Al_x)_{0.5}P$. We also have evaluated the parameters that describe the temperature dependences of the band gap.

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