• Journal of the Korean Vacuum Society
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• v.8 no.3A
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• pp.187-193
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• 1999

In this study, PVDF thin films which show the excellent piezoelectricity and pyroelectricity, are prepared by PVD (physical vapor deposition) method, and thir electrical conduction phenomena for analyses of the electrical conduction mechanism and TSC (Thermally Stimulated Current) for identification of the behavior of conductive carriers are investigated. As a result of FT-IR(Fourier Transform Infrared Spectroscopy) spectra, the crystalline phase transforms $\alpha$ type into $\beta$ type with increasing electric field. From XRD (X-Ray diffraction) analyses patterns, the degree of crystallinity increases from 49.8% to 67%, as the substrate temperature increases from $30^{\circ}C$ to $80^{\circ}C$. As a result of electrical conduction phenomena, the electrical conduction mechanism of PVDF thin films is identified as ionic conduction mechanism. From TSC analyses, there are three peaks as P1, P2, P3 with increasing temperature, and with increasing substrate temperature, the peak temperature of TSC increases and the peak intensity of TSC decreases.

• Journal of the Korean Ceramic Society
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• v.41 no.8
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• pp.623-627
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• 2004

Phase formation and electrical conduction behavior of Ba-doped LaBaGa $O_4$ layered perovskite were studied. Orthorhombic single phase of $K_2$Ni $F_4$-type structure was observed for the composition range of 0$\leq$x$\leq$0.2 in the La$\_$1＋x/Ba$\_$1＋x/Ga $O_4$$\_$4-$\delta$/ system by X-ray analysis. In the dry atmosphere, La$\_$0.8/Ba$\_$1.2/Ga$\_$3.9/ exhibited mixed conduction of oxygen ion and hole (p-type) at high p( $O_2$). However, in water vapor containing atmosphere, it showed proton conduction due to the incorporation of water into oxygen vacancies. As the temperature decreased, the contribution of proton conductivity to the total conduction increased and proton conduction was dominant below 350$^{\circ}C$. The activation energy for proton conduction was calculated as 0.72 eV.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.15 no.3
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• pp.220-226
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• 2002

Amorphous $Sb_{2-x}Bi_xTe_3$ (x = 0.0, 0.5 and 1.0) thin films were prepared by vacuum evaporation. The resistivity of 7he films decreases from 1.4{\times}10^{-2}$ to $8.84{\times}10^{-5}\Omega cm$ and the type of conductivity changes from p to n with the increase of the x value of the films. D.C. conduction studies on these films ate performed at various electric fields in the temperature range of 303-403 K. At low electric fields, two types of conduction mechanisms, i.e. the variable range hopping and the phonon assisted hopping are found to be responsible for the conduction, depending upon the temperature. The activation energy decreases from 0.082 to 0.076 eV in the temperature range of 303-363 K and from 0.47-0.456 eV in the second range of 363-403 K, indicating the shift of the Fermi level towards the conduction band edge and hence the change of the conduction from P to n type with the increase of the Bi concentration. Poole-Frankel emission dominates at high fields. The shape of the potential well of the localized centre is deduced and the mean free path of the charge carriers is also calculated.

• Journal of Chest Surgery
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• v.19 no.2
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• pp.232-237
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• 1986

The intraventricular conduction disturbances have been documented after correction of ventricular septal defects by any surgical route but debated its etiology. And so the frequency of conduction disturbances following right ventriculotomy, right atriotomy and pulmonary arteriotomy for closure of ventricular septal defects was compared in various conditions. The present series consists of 218 patients with ventricular septal defects. They had the surgical repair at the Seoul National University Hospital from January 1983 to October 1984. Conduction disturbances were studied with conventional 12 leads electrocardiogram. Of the 218 VSD`s 139 patients were repaired via vertical right ventriculotomy, 45 patients via right atriotomy, 34 patients via pulmonary arteriotomy. 1] Of 218 patients the frequency of RBBB was 26.1% and the frequency of RBBB + LAH was 6.0%. 2] There is no statistical difference between right ventriculotomy group [30.2%] and right atriotomy group [24.4%]. But there is significant difference between right ventriculotomy group and pulmonary arteriotomy group [11.8%] [P<0.05]. 3] In respect to anatomical classification by Kirklin`s method, the frequency of RBBB was higher in type II [32.1%] than in type I [14.9%]. [P<0.05] But in each anatomical type, there is no influence of the various surgical approach on the incidence of postoperative RBBB. 4] The frequency of RBBB was 31.8% in patch closure group and 14.3% in direct closure group. [P<0.05] Although the result suggests that there is no significant difference in various surgical approaches on the incidence of postoperative conduction disturbances, it may be reduced by a new-ventricular approach or a limited incision at right ventricular outflow tract in right ventricular approach.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2006.06a
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• pp.144-145
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• 2006

ZnO is a promising material to make high efficiency violet or blue light emitting diodes (LEDs) for its large binding energy (60meV) and big bandgap. But the high quality p-type conduction of ZnO is a dilemma to achieve LEDs with it. In present study, we presented a reliable method to prepare ZnO thin films on (100)silicon substrates by RF magnetron sputtering in the mixture ambient of $N_2$ and $O_2$, accompanying with low pressure annealing in the sputtering chamber in $O_2$ at $600^{\circ}C$ and $800^{\circ}C$ respectively. X-ray diffraction and Hail effect with Van der Paul method were performed to test ZnO films. Seeback effect was also carried out to identify carrier types in ZnO films and showed the N-doped ZnO film annealed at $800^{\circ}C$ had achieved p-type conduction.

• Journal of Advanced Marine Engineering and Technology
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• v.40 no.5
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• pp.389-396
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• 2016

The theory of Fourier heat conduction predicts accurately the temperature profiles of a system in a non-equilibrium steady state. However, in the case of transient states at the nanoscale, its applicability is significantly limited. The limitation of the classical Fourier's theory was overcome by C. Cattaneo and P. Vernotte who developed the theory of non-Fourier heat conduction in 1958. Although this new theory has been used in various thermal science areas, it requires considerable mathematical skills for calculating analytical solutions. The aim of this study was the identification of a newer and a simpler type of solution for the hyperbolic partial differential equations of the non-Fourier heat conduction. This constitutes the first trial in a series of planned studies. By inspecting each term included in the proposed solution, the theoretical feasibility of the solution was achieved. The new analytical solution for the non-Fourier heat conduction is a simple exponential function that is compared to the existing data for justification. Although the proposed solution partially satisfies the Cattaneo-Vernotte equation, it cannot simulate a thermal wave behavior. However, the results of this study indicate that it is possible to obtain the theoretical solution of the Cattaneo-Vernotte equation by improving the form of the proposed solution.

• Annals of Clinical Neurophysiology
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• v.16 no.1
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• pp.8-14
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• 2014

Background: Early detection of neuropathy may prevent further progression of this complication in the diabetic patients. The purpose of this study was to evaluate the prevalence of early neuropathic complication in patients with newly diagnosed type 1 and type 2 diabetes. Methods: Nerve conduction studies (median, ulnar, posterior tibial, peroneal, and sural nerves) were performed for 49 type 1 (27 males, mean $14.1{\pm}7.5$ years) and 40 type 2 (27 males, $42.0{\pm}14.1$ years) diabetic patients at onset of diabetes. Children with age at onset under 4 years and adults over 55 years were excluded to eliminate the aging effect and the influence of obstructive arteriosclerosis. Neuropathy was defined as abnormal nerve conduction findings in two or more nerves including the sural nerve. Results: Mean HbA1c level was $12.6{\pm}3.3%$ for type 1 and $10.5{\pm}2.9%$ for type 2 diabetes. The prevalence of neuropathy was 12.2% for type 1, and 35.0% for type 2 diabetes, respectively. There were significant trends in the prevalence of neuropathy with increasing age (p<0.05). The effect of the mean level of glycosylated hemoglobin on the prevalence of polyneuropathy at onset of diabetes was borderline (p=0.0532). Neither sex of the patients nor the type of diabetes affected the neurophysiologic abnormalities at the diagnosis. Conclusions: Even in a population with diabetes at the diagnosis, the prevalence of subclinical neuropathy was not low. Neuropathy has been significantly associated with increasing age indicating the possibility of longer duration of undetected diabetes among them, especially in type 2 diabetes.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.22 no.10
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• pp.814-820
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• 2009

Antimony (Sb) doped ZnO thin films (0.1 at.%) were deposited on sapphire (0001) substrates at various temperatures (200 - 600$^{\circ}C$) by using pulsed laser deposition technique. All the thin films have been characterized by X-ray diffractometer, atomic force microscopy and spectrophotometer to investigate their structural, morphological and optical properties, respectively. Hall measurements were also carried out to identify the electrical properties of the thin films. These thin films were constituted in wurtzite structure with the preferential orientation of (002) diffraction plane and had as high as 80% optical transmission in the visible range. The bandgap energy also was determined by spectrophotometer which was around 3.28 eV. Hall measurements results revealed that the Sb dope ZnO thin film (0.1 at.%) grown at $500^{\circ}C$ exhibited p-type conduction with a carrier concentration of $8.633\times10^{16}\;cm^{-3}$, a mobility of $1.41\;cm^2/V{\cdot}s$ and a resistivity of $51.8\;\Omega{\cdot}cm$. We have successfully achieved p-type conduction in antimony doped ZnO thin films with low doping level even though the electrical properties are not favorable. This paper suggests the feasibility of p-type doping with large-size-mismatched dopant by using pulsed laser deposition.

• The Transactions of the Korean Institute of Electrical Engineers P
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• v.58 no.4
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• pp.377-384
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• 2009

In this paper, leakage current sensing module of SoC(System on Chip)type and real time monitoring system under consideration of electromagnetic interface in power trunk line are developed. The first, leakage current sensing module of SoC type under consideration of electromagnetic interface is developed, and the developed sensing module of SoC type is composed of leakage sensing part, power supply part, interface part, communication part, AD(Alternating current to Direct current)convert part and amplification part. And also the electromagnetic compatibility is evaluated by conduction and radiation of EMI(Electromagnetic Interference) for developed sensing module. The developed system can have confidence, stability and do energy saving under mixed electric circumstance of the low voltage communication device and high voltage equipment. The second, the real time remote monitoring system is developed using designed wire and wireless communication module with leakage current sensing module of SoC type. The developed real time remote monitoring system can monitor sensing state, occurrence state of leakage current and alarm for each step etc.. And the device configuration, PCB layout for leakage current sensing module of system on chip type and the experiment configuration in consideration of EMI are presented. Also the measurement results of conduction and radiation for EMI are presented.

• Proceedings of the KIEE Conference
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• 1987.07a
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• pp.473-476
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• 1987

Low temperature phosphorus-nitride CVD was newly developed for a high quality gate insulator on InP substrate. This film showed the Poole-Frenkel type conduction in high electric field with resistivity higher than $1{\times}10^{14}$ ohm-cm near the electric field of $1{\times}10^7\;volt/cm$. The C-V hysteresis width was very small as 0.17 volt. The density of interface trap states was $2{\times}10^{11}cm^{-2}ev^{-1}$ below the conduction band edge of InP substrate. Effective electron mobility was about $1200-1500\;cm^2/Vsec$ and showed the instability of PN-InP MISFETs drain current reduced less than 10 percent for the period $0.5-10^3sec$.