• Bulletin of the Korean Mathematical Society
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• v.55 no.5
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• pp.1577-1586
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• 2018

In this paper, we prove that if every bounded ${\mathcal{A}}$-harmonic function on a complete Riemannian manifold M is asymptotically constant at infinity of p-nonparabolic ends of M, then each bounded ${\mathcal{A}}$-harmonic function is uniquely determined by the values at infinity of p-nonparabolic ends of M, where ${\mathcal{A}}$ is a nonlinear elliptic operator of type p on M. Furthermore, in this case, every bounded ${\mathcal{A}}$-harmonic function on M has finite energy.

• The Transactions of the Korean Institute of Electrical Engineers
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• v.43 no.3
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• pp.420-431
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• 1994

The HgCdTe material, which is II-VI compound semiconductor, is important materials for the fabrication of the infrared detectros. To suggest the model of accurate MIS C-V calculation for narrow band gap semiconductors such as HgCdTe, non-parabolicity from k.p theory and degeneracy effect are considered. And partially ionized effect and compensation effect which are material's properties are also considerd. Especially, degenerated material C-V characteristics from Fermi-Dirac statistics and exact charge theory are presented to get more accurate analysis of the experimental results. Also the comparison with calculation results between the general MIS theory from Boltzmann appoximation method and this model which is considered the narrow band gap semiconductor properties, show that this model is more useful theory to determination of accurate low and high frequency C-V characteristics.