• 제목/요약/키워드: p-i-n type

검색결과 598건 처리시간 0.033초

Effects of Methylprednisolone on TGF-${\beta}1$, Apoptosis and Renal Scarring in Experimental Acute Pyelonephritic Weaning Rats (실험적 급성 신우신염이 유발된 이유기 백서에서 methylprednisolone이 TGF-${\beta}1$, 세포고사 및 신반흔에 미치는 영향)

  • Whang, Soo-Ja;Sung, Soon-Hee;Lee, Seung-Joo
    • Childhood Kidney Diseases
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    • 제6권1호
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    • pp.75-84
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    • 2002
  • Purpose Acute pyelonephritis of growing kidneys may result in renal scarring. TGF-${\beta}1$, inflammatory cytokine, has been suggested to play an important role in promoting renal scarring through apoptosis, suppression of cellular proliferation and fibrosis. We observed the effects of a potent anti-inflammatory agent, methylprednisolone on apoptosis and renal scarring in experimentally induced acute pyelonephritic weaning rats. Materials and Methods: To induce ascending pyelonephritis a saline solution containing Escherichia coli type ATCC No. 25922, pili- form (107 bacteria/mL) was infused into the bladder through the 16-guage silicone cannula for 48 hours to 102 three-week-old Sprague-Dawley rats (50-60g). Experimental groups were divided into three groups according to the treatment protocols, group I (ceftriaxone only, n=3l), group II (methylprednisolone+ceftriaxone n=28), control group (n=43) was not treated. Histopathologic scores of inflammatory changes, fibrosis and tubular atrophy, the apoptosis index and TGF-${\beta}1$ expression score were observed at post-infection 1 and 3 week. Datas were analysed using ANOVA test and P value below 0.05 was interpreted as significant. Results: The mortality rate ($21.4\%$) of group II was not different to the control group ($41.9\%$) and group I ($32.3\%$). The inflammatory score of group II ($0.8{\pm}0.87$) at week 1 was significantly lower than those of the control group ($2.3{\pm}0.87$) and Group I ($1.7{\pm}0.79$) (P<0.05). Apoptosis index of group II ($2.9{\pm}2.15$) at week 1 was significantly lower than those of the control group ($10.0{\pm}1.95$) and group 1 ($8.3{\pm}2.53$) (P<0.05). TCF-${\beta}1$ expression score of group II ($0.8{\pm}0.72$) at week 1 was significantly lower than those of the control group ($1.9{\pm}0.68$) and group I ($1.8{\pm}0.60$) (P<0.05). The fibrosis score of group II ($1.1{\pm}1.10$) at week 3 was significantly lower than that of the group I ($1.8{\pm}0.83$) (P<0.05) Conclusion: Conclusion Combined treatment with methylprednisolone and ceftriaxone reduced inflammation, fibrosis, apoptosis and TGF-${\beta}1$ expression in acute pyelonephritic weaning rats, compared to ceftriaxone alone. Anti-inflammatory agent supplemented to antibiotics could prevent renal scarring more effectively. (J Korean Soc Pediatr Nephrol 2002 ; 6 : 75-84)

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Binary Compound Formation upon Copper Dissolution: STM and SXPS Results

  • Hai, N.T.M.;Huemann, S.;Hunger, R.;Jaegermann, W.;Broekmann, P.;Wandelt, K.
    • Corrosion Science and Technology
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    • 제6권4호
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    • pp.198-205
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    • 2007
  • The initial stages of electrochemical oxidative CuI film formation on Cu(111), as studied by means of Cyclic Voltammetry (CV), in-situ Scanning Tunneling Microscopy (STM) and ex-situ Synchrotron X-ray Photoemission Spectroscopy (SXPS), indicate a significant acceleration of copper oxidation in the presence of iodide anions in the electrolyte. A surface confined supersaturation with mobile CuI monomers first leads to the formation of a 2D-CuI film via nucleation and growth of a Cu/I-bilayer on-top of a pre-adsorbed iodide monolayer. Structurally, this 2D-CuI film is closely related to the (111) plane of crystalline CuI (zinc blende type). Interestingly, this film causes no significant passivation of the copper surface. In an advanced stage of copper dissolution a transition from the 2D- to a 3D-CuI growth mode can be observed.

GaN epitaxy growth by low temperature HYPE on $CoSi_2$ buffer/Si substrates (실리콘 기판과 $CoSi_2$ 버퍼층 위에 HVPE로 저온에서 형성된 GaN의 에피텍셜 성장 연구)

  • Ha, Jun-Seok;Park, Jong-Sung;Song, Oh-Sung;Yao, T.;Jang, Ji-Ho
    • Journal of the Korean Crystal Growth and Crystal Technology
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    • 제19권4호
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    • pp.159-164
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    • 2009
  • We fabricated 40 nm-thick cobalt silicide ($CoSi_2$) as a buffer layer, on p-type Si(100) and Si(111) substrates to investigate the possibility of GaN epitaxial growth on $CoSi_2$/Si substrates. We deposited GaN using a HVPE (hydride vapor phase epitaxy) with two processes of process I ($850^{\circ}C$-12 minutes + $1080^{\circ}C$-30 minutes) and process II ($557^{\circ}C$-5 minutes + $900^{\circ}C$-5 minutes) on $CoSi_2$/Si substrates. An optical microscopy, FE-SEM, AFM, and HR-XRD (high resolution X-ray diffractometer) were employed to determine the GaN epitaxy. In case of process I, it showed no GaN epitaxial growth. However, in process II, it showed that GaN epitaxial growth occurred. Especially, in process II, GaN layer showed selfaligned substrate separation from silicon substrate. Through XRD ${\omega}$-scan of GaN <0002> direction, we confirmed that the combination of cobalt silicide and Si(100) as a buffer and HVPE at low temperature (process II) was helpful for GaN epitaxy growth.

Molecular Biological Characterization of Recombinant Baculovirus with an Expanded Host Range (숙주범위가 넓어진 유전자 재조합 핵다각체병 바이러스의 분자생물학적 특성)

  • 김우진;우수동
    • Journal of Sericultural and Entomological Science
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    • 제38권1호
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    • pp.42-47
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    • 1996
  • To investigate the host range determining factors of nuclear polyhedrois virus (NPV), Autographa california NPV and Bombyx mori NPV were coinfected into the two different cell lines, BmN-4 and Sf-9. The recombinant baculoviruses, RecS-A6 and RecB-727 which have an expanded host range, were isolated from Sf-9 and BmN-4 cell lines, respectively. The molecular biological characteristics of the recombinant baculoviruses were investigated. The pathogenicity of RecB-727 was similar to that of wild type BmNPV, while the pathogenicity of RecS-A6 was relatively lower than that of wild type BmNPV. The restriction enzyme digestion patterns of parental viruses and recombinant viruses showed that the recombinant virus has an expanded host range by genetic recombination. Southern blot analysis revealed that the p10 gene of RecB-727 was derived from AcNPV genomic DNA, while RecS-A6 has p10 gene of BmNPV in a viral genome. To investigate the host range expansion mechanism of recombinant baculovirus, HindIII-SacI 0.6 kb DNA fragments of RecS-A6 and RecB-727 were cloned and sequenced. The results showed that of wild type BmNPV helicase gene, suggesting that the expanded host range of recombinant baculoviruses was due to the insertion of BmNPV helicase gene into AcNPV viral genome.

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Hybrid polymer-quantum dot based single active layer structured multi-functional device (Organic Bistable Device, LED and Photovoltaic Cell)

  • Son, Dong-Ick;Kwon, Byoung-Wook;Park, Dong-Hee;Kim, Tae-Whan;Choi, Won-Kook
    • Proceedings of the Korean Vacuum Society Conference
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    • 한국진공학회 2009년도 제38회 동계학술대회 초록집
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    • pp.97-97
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    • 2010
  • We demonstrate the hybrid polymer-quantum dot based multi-functional device (Organic bistable devices, Light-emitting diode, and Photovoltaic cell) with a single active-layer structure consisting of CdSe/ZnS semiconductor quantum-dots (QDs) dispersed in a poly N-vinylcarbazole (PVK) and 1,3,5-tirs- (N-phenylbenzimidazol-2-yl) benzene (TPBi) fabricated on indium-tin-oxide (ITO)/glass substrate by using a simple spin coating technique. The multi-functionality of the device as Organic bistable device (OBD), Light Emitting Diode (LED), and Photovoltaic cell can be successfully achieved by adding an electron transport layer (ETL) TPBi to OBD for attaining the functions of LED and Photovoltaic cell in which the lowest unoccupied molecular orbital (LUMO) level of TPBi is positioned at the energy level between the conduction band of CdSe/ZnS and LiF/Al electrode (band-gap engineering). Through transmission electron microscopy (TEM) study, the active layer of the device has a p-i-n structure of a consolidated core-shell structure in which semiconductor QDs are uniformly and isotropically adsorbed on the surface of a p-type polymer core and the n-type small molecular organic materials surround the semiconductor QDs.

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Properties $(Bi,Sb)_2(Te,Se)_3$-based Thermoelectrics Prepared by the Extrusion-Sintering Process (압출-소결법으로 제조된 $(Bi,Sb)_2(Te,Se)_3$계 열전재료의 특성)

  • Ji, Cheol-Won;Kim, Il-Ho;Lee, Dong-Hui
    • Korean Journal of Materials Research
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    • 제9권5호
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    • pp.520-527
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    • 1999
  • As a new approache(extrusion-sintering process) to fabricate the thermoelectric materials, it has been at tempted to extrude and sinter the powders simultaneously. It was possible to produce the highly dense <$(Bi,Sb)_2(Te,Se)_3$-based thermoelectrics with sound surface appearances and microstructures by adjusting the process variables. For the p-type materials, the Seeback coefficient was increased with the amount of Te dopants, and the thermoelectric figure of merit appeared to be $2.5\times10^{-3}/K$ at room temperature when doped with 3 at % Te. The n-type specimen doped with 0.16 mol% $SbI_3$ showed the thermoelectric figure of merit of $1.8\times10^{-3}/K$. In both p-type an 우-type materials, the carrier mobility an the thermoelectric figure of merit parallel to the extrusion direction were higher than those perpendicular to it.

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The Effect of Trigonella foenum-graceum L. (Fenugreek) Towards Collagen Type I Alpha 1 (COL1A1) and Collagen Type III Alpha 1 (COL3A1) on Postmenopausal Woman's Fibroblast

  • Yusharyahya, Shannaz Nadia;Bramono, Kusmarinah;Sutanto, Natalia Rania;Kusuma, Indra
    • Natural Product Sciences
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    • 제25권3호
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    • pp.208-214
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    • 2019
  • Trigonella foenum-graceum L. (fenugreek) is a phytoestrogen, a nonsteroidal organic chemical compound from plants which has similar mechanism of action to sex hormone estradiol-$17{\beta}$. This study aims to assess the effectivity of fenugreek seeds extract on collagen type I alpha 1 (COL1A1) and collagen type III alpha 1 (COL3A1) which are both decreased in aging skin and become worsen after menopause. This in vitro experimental study used old human dermal fibroblast from leftover tissue of blepharoplasty on a postmenopausal woman (old HDF). As a control of the fenugreek's ability to trigger collagen production, we used fibroblast from preputium (young HDF). Subsequent to fibroblast isolation and culture, toxicity test was conducted on both old and young HDF by measuring cell viability on fenugreek extract with the concentration of 5 mg/mL to $1.2{\mu}g/mL$ which will be tested on both HDF to examine COL1A1 and COL3A1 using ELISA, compared to no treatment and 5 nM estradiol. Old HDF showed a 4 times slower proliferation compared to young HDF (p<0.05). Toxicity test revealed fenugreek concentration of $0.5-2{\mu}g/mL$ was non-toxic to both old and young HDF. The most significant fenugreek concentration to increase COL1A1 and COL3A1 secretion was $2{\mu}g/mL$ (p<0.05).

Study on Fiber Laser Annealing of p-a-Si:H Deposition Layer for the Fabrication of Interdigitated Back Contact Solar Cells (IBC형 태양전지 제작을 위한 p-a-Si:H 증착층의 파이버 레이저 가공에 관한 연구)

  • Kim, Sung-Chul;Lee, Young-Seok;Han, Kyu-Min;Moon, In-Yong;Kwon, Tae-Young;Kyung, Do-Hyun;Kim, Young-Kuk;Heo, Jong-Kyu;Yoon, Ki-Chan;Yi, Jun-Sin
    • Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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    • 한국전기전자재료학회 2008년도 추계학술대회 논문집 Vol.21
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    • pp.430-430
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    • 2008
  • Using multi plasma enhanced chemical vapor deposition system (Multi-PECVD), p-a-Si:H deposition layer as a $p^+$ region which was annealed by laser (Q-switched fiber laser, $\lambda$ = 1064 nm) on an n-type single crystalline Si (100) plane circle wafer was prepared as new doping method for single crystalline interdigitated back contact (IBC) solar cells. As lots of earlier studies implemented, most cases dealt with the excimer (excited dimer) laserannealing or crystallization of boron with the ultraviolet wavelength range and $10^{-9}$ sec pulse duration. In this study, the Q-switched fiber laser which has higher power, longer wavelength of infrared range ($\lambda$ = 1064 nm) and longer pulse duration of $10^{-8}$ sec than excimer laser was introduced for uniformly deposited p-a-Si:H layer to be annealed and to make sheet resistance expectable as an important process for IBC solar cell $p^+$ layer on a polished n-type Si circle wafer. A $525{\mu}m$ thick n-type Si semiconductor circle wafer of (100) plane which was dipped in a buffered hydrofluoric acid solution for 30 seconds was mounted on the Multi-PECVD system for p-a-Si:H deposition layer with the ratio of $SiH_4:H_2:B_2H_6$ = 30:120:30, at $200^{\circ}C$, 50 W power, 0.2 Torr pressure for 20 minutes. 15 mm $\times$ 15 mm size laser cut samples were annealed by fiber laser with different sets of power levels and frequencies. By comparing the results of lifetime measurement and sheet resistance relation, the laser condition set of 50 mm/s of mark speed, 160 kHz of period, 21 % of power level with continuous wave mode of scanner lens showed the features of small difference of lifetime and lowering sheet resistance than before the fiber laser treatment with not much surface damages. Diode level device was made to confirm these experimental results by measuring C-V, I-V characteristics. Uniform and expectable boron doped layer can play an important role to predict the efficiency during the fabricating process of IBC solar cells.

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Fabrication and Characterization of AlGaAs/GaAs HBT (AlGaAs/GaAs HBT의 제작과 특성연구)

  • 박성호;최인훈;오응기;최성우;박문평;윤형섭;이해권;박철순;박형무
    • Journal of the Korean Institute of Telematics and Electronics A
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    • 제31A권9호
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    • pp.104-113
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    • 1994
  • We have fabricated n-p-n HBTs using 3-inchAlgaAs/GaAs hetero structure epi-wafers grown by MBE. DC and AC characteristics of HBT devices were measured and analyzed. For HBT epi-structure, Al composition of emitter was graded in the region between emitter cap and emitter. And base layer was designed with concentration of 1${\times}10^{19}/cm^{3}$ and thickness of 50nm, and Be was used as the p-type dopant. Principal processes for device fabrication consist of photolithography using i-line stepper, wet mesa etching, and lift-off of each ohmic metal. The PECVD SiN film was used as the inslator for the metal interconnection. HBT device with emitter size of 3${\times}10{\mu}m^{2}$ resulted in cut-off frequency of 35GHz, maximum oscillation frequency of 21GHz, and current gain of 60. The distribution of the ideality factor of collector and base current was very uniform, and the average values of off-set voltage and current was very uniform, and the average values of off-set voltage and current gain were 0.32V and 32 within a 3-inch wafer.

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The control of invasive Candida infection in very low birth weight infants by reduction in the use of 3rd generation cephalosporin

  • Chang, Yu Jin;Choi, Il Rak;Shin, Won Sub;Lee, Jang Hoon;Kim, Yun Kyung;Park, Moon Sung
    • Clinical and Experimental Pediatrics
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    • 제56권2호
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    • pp.68-74
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    • 2013
  • Purpose: To evaluate the effectiveness of new management policies on the incidence of invasive Candida infections Methods: This observational study involved a retrospective analysis of the patients' medical records. In total, 99 very low birth weight infants, who were admitted to the neonatal intensive care unit at Ajou University Hospital from January 2010 to December 2011, were enrolled for the study. Period I, defined as the period before the revision of management policies, comprised 57 infants; whereas, period II, defined as the period after the implementation of new management policies, comprised 42 infants. The new management policies entailed a reduction in antibiotic and histamine type 2 receptor blocker (H2 blocker) use, duration of central venous catheterization, and duration of endotracheal intubation. Results: There was a significant overall decrease in the use of antibiotics including 3rd generation cephalosporin and H2 blockers (P<0.05), and a significantly lower incidence of invasive Candida infections in period II as compared to period I (0/42 vs. 6/57, respectively; P=0.037). Comparison between infants with invasive Candida infections (n=6) and those without (n=93) showed that gestational age (odds ratio [OR], 0.909; 95% confidence interval [CI], 0.829 to 0.996; P=0.042) and the duration of 3rd generation cephalosporin use (OR, 1.093; 95% CI, 1.009 to 1.183; P=0.029) were statistically significant risk factors. Conclusion: The new management policies effectively decreased overall use of antibiotics, especially 3rd generation cephalosporin, and H2 blockers, which led to a significantly lower incidence of invasive Candida infections.