• Development and Reproduction
• /
• v.24 no.4
• /
• pp.297-306
• /
• 2020

Repetitive changes in the intracellular calcium concentration ([Ca²⁺]i) triggers egg activation, including cortical granule exocytosis, resumption of second meiosis, block to polyspermy, and initiating embryonic development. [Ca²⁺]i oscillations that continue for several hours, are required for the early events of egg activation and possibly connected to further development to the blastocyst stage. The sources of Ca²⁺ ion elevation during [Ca²⁺]i oscillations are Ca²⁺ release from endoplasmic reticulum through inositol 1,4,5 tri-phosphate receptor and Ca²⁺ ion influx through Ca²⁺ channel on the plasma membrane. Ca²⁺ channels have been characterized into voltage-dependent Ca²⁺ channels (VDCCs), ligand-gated Ca²⁺ channel, and leak-channel. VDCCs expressed on muscle cell or neuron is specified into L, T, N, P, Q, and R type VDCs by their activation threshold or their sensitivity to peptide toxins isolated from cone snails and spiders. The present study was aimed to investigate the localization pattern of N and P/Q type voltage-dependent calcium channels in mouse eggs and the role in fertilization. [Ca²⁺]i oscillation was observed in a Ca²⁺ contained medium with sperm factor or adenophostin A injection but disappeared in Ca²⁺ free medium. Ca²⁺ influx was decreased by Lat A. N-VDCC specific inhibitor, ω-Conotoxin CVIIA induced abnormal [Ca²⁺]i oscillation profiles in SrCl₂ treatment. N or P/Q type VDC were distributed on the plasma membrane in cortical cluster form, not in the cytoplasm. Ca²⁺ influx is essential for [Ca²⁺]i oscillation during mammalian fertilization. This Ca²⁺ influx might be controlled through the N or P/Q type VDCCs. Abnormal VDCCs expression of eggs could be tested in fertilization failure or low fertilization eggs in subfertility women.

• Journal of applied mathematics & informatics
• /
• v.32 no.1_2
• /
• pp.55-60
• /
• 2014

In this paper, we will obtain Marcinkiewicz's type limit laws for fuzzy random sets as follows : Let {$X_n{\mid}n{\geq}1$} be a sequence of independent identically distributed fuzzy random sets and $E{\parallel}X_i{\parallel}^r_{{\rho_p}}$ < ${\infty}$ with $1{\leq}r{\leq}2$. Then the following are equivalent: $S_n/n^{\frac{1}{r}}{\rightarrow}{\tilde{0}}$ a.s. in the metric ${\rho}_p$ if and only if $S_n/n^{\frac{1}{r}}{\rightarrow}{\tilde{0}}$ in probability in the metric ${\rho}_p$ if and only if $S_n/n^{\frac{1}{r}}{\rightarrow}{\tilde{0}}$ in $L_1$ if and only if $S_n/n^{\frac{1}{r}}{\rightarrow}{\tilde{0}}$ in $L_r$ where $S_n={\Sigma}^n_{i=1}\;X_i$.

• Bulletin of the Korean Mathematical Society
• /
• v.43 no.3
• /
• pp.543-549
• /
• 2006

Sung et al. [13] obtained a WLLN (weak law of large numbers) for the array $\{X_{{ni},\;u_n{\leq}i{\leq}v_n,\;n{\leq}1\}$ of random variables under a Cesaro type condition, where $\{u_n{\geq}-{\infty},\;n{\geq}1\}$ and $\{v_n{\leq}+{\infty},\;n{\geq}1\}$ large two sequences of integers. In this paper, we extend the result of Sung et al. [13] to a martingale type p Banach space.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
• /
• v.16 no.12
• /
• pp.1097-1102
• /
• 2003

In this paper, we used only PR as etching mask, while it used usually Cr/AU as etching mask, and in order to fabricate a photosensor has the increased sensitivity, we investigated on the sensitivity of general type and p-i-n type diode. we designed microchannel size width max 10um, min 5um depth max 10um, reservoir size max 100um, min 2mm. Fabrication of microfluidic devices in glass substrate by glass wet etching methods and glass to glass fusion bonding. The p-i-n diode has higher sensitivity than photodiode, Considering these results, we fabricated p-i-n diodes on the high resistive(4㏀$.$cm) wafer into rectangle and finger pattern and compared internal resistance of each pattern. The internal resistance of pin diode can be decreased by the application of finger pattern has parallel resistance structure from 571Ω to 393Ω.

• The Journal of the Institute of Internet, Broadcasting and Communication
• /
• v.15 no.6
• /
• pp.231-238
• /
• 2015

In this paper, we have studied a sheet resistance property of N- and P-type thin films deposited on ITO glass by use of RF magnetron sputtering. The N-type samples which has the deposition condition of 150W RF power, shows the highest current value, and the samples deposited for 15 minutes shows a better Ohmic contact property. As the substrate temperature, RF power and deposition time are increased, the sheet resistance of the samples is increased, and the low sheet resistance sample shows a better I-V property. The P-type samples shows the highest current value by 150W RF power condition as similar as N-type samples. and the samples deposited for 20 minutes shows a better ohmic contact property. The sheet resistance of the both types samples is increased as increasing RF power and deposition time.

• Journal of Sensor Science and Technology
• /
• v.20 no.4
• /
• pp.260-265
• /
• 2011

The silicon vertical hall devices are fabricated using a modified bipolar process. It consists of the thin p-layer at Si-$SiO_2$, interface and n-epi layer without $n^+$buried layer to improve the sensitivity and influence of interface effects. Experimental samples are a sensor type I with and type H without p+isolation dam adjacent to the center current electrode. The experimental results for both type show a more high current-related sensitivity than the former's vertical hall devices. The sensitivity of type H and type I are about 150 V/AT and 340 V/AT, respectively. This sensor's behavior can be explained by the similar J-FET model.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
• /
• 2004.07b
• /
• pp.906-911
• /
• 2004

In this paper, we used only PR as etching mask, while it used usually Cr/AU as etching mask, and in order to fabricate a photosensor has the increased sensitivity, we investigated on the sensitivity of general type and p-i-n type diode. we designed microchannel size width max 10um, min 5um depth max 10um, reservoir size max 100um, min 2mm. Fabrication of microfluidic devices in glass substrate by glass wet etching methods and glass to glass fusion bonding. The p-i-n diode has higher sensitivity than photodiode. Considering these results, we fabricated p-i-n diodes on the high resistive($4k{\Omega}{\cdot}cm$) wafer into rectangle and finger pattern and compared internal resistance of each pattern. The internal resistance of p-i-n diode can be decreased by the application of finger pattern has parallel resistance structure from $571\Omega$ to $393\Omega$.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
• /
• 2003.04a
• /
• pp.100-103
• /
• 2003

Signal detection technologies such as fluorescence, charge and electrochemical detection used in the monolithic capillary electrophoresis system to convert the biochemical reaction into the electrical signal. The fluorescence detection using photodiodes that measure fluorescence emitted from eluting molecules is widely used for the monolithic capillary electrophoresis system. In this paper, in order to fabricate a photosensor has the increased sensitivity, we investigated on the sensitivity of general type and p-i-n type diode. The p-i-n diode has higher sensitivity than photodiode. Considering these results, we fabricated p-i-n diodes on the high resistive$(4k{\Omega}{\cdot}cm)$ wafer into rectangle and finger pattern and compared internal resistance of each pattern. The internal resistance of p-i-n diode can be decreased by the application of finger pattern has parallel resistance structure from $571{\Omega}$ to $393{\Omega}$.

• Transactions on Electrical and Electronic Materials
• /
• v.18 no.2
• /
• pp.70-73
• /
• 2017

We investigated n-i-p type single junction hydrogenated amorphous silicon oxide solar cells. These cells were without front surface texture or back reflector. Maximum power point efficiency of these cells showed that an optimized device structure is needed to get the best device output. This depends on the thickness and defect density ($N_d$) of the active layer. A typical 10% photovoltaic device conversion efficiency was obtained with a $N_d=8.86{\times}10^{15}cm^{-3}$ defect density and 630 nm active layer thickness. Our investigation suggests a correlation between defect density and active layer thickness to device efficiency. We found that amorphous silicon solar cell efficiency can be improved to well above 10%.

• Bulletin of the Korean Mathematical Society
• /
• v.53 no.4
• /
• pp.1185-1196
• /
• 2016

We show a class of homogeneous polynomials of Fermat-Waring type such that for a polynomial P of this class, if $P(f_1,{\ldots},f_{N+1})=P(g_1,{\ldots},g_{N+1})$, where $f_1,{\ldots},f_{N+1}$; $g_1,{\ldots},g_{N+1}$ are two families of linearly independent entire functions, then $f_i=cg_i$, $i=1,2,{\ldots},N+1$, where c is a root of unity. As a consequence, we prove that if X is a hypersurface defined by a homogeneous polynomial in this class, then X is a unique range set for linearly non-degenerate non-Archimedean holomorphic curves.