• Title/Summary/Keyword: p-i-n inverted perovskite solar cells

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Annealing Temperature of Nickel Oxide Hole Transport Layer for p-i-n Inverted Perovskite Solar Cells (P-I-N 역구조 페로브스카이트 태양전지 응용을 위한 Nickel oxide 홀전달층의 열처리 온도 연구)

  • Gisung Kim;Mijoung Kim;Hyojung Kim;JungYup Yang
    • Current Photovoltaic Research
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    • v.11 no.4
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    • pp.103-107
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    • 2023
  • A Nickel oxide (NiOx) thin films were prepared via sol-gel process on a transparent conductive oxide glass substrate. The NiOx thin films were spin-coated in ambient air and subsequently annealed for 30 minutes at temperatures ranging from 150℃ to 450℃. The structural and optical characteristics of the NiOx thin films annealed at various temperatures were measured using X-ray diffraction, field emission scanning electron microscopy, and ultraviolet-visible spectroscopy. After optimizing the NiOx coating conditions, perovskite solar cells were fabricated with p-i-n inverted structure, and its photovoltaic performance was evaluated. NiOx thin films annealed at 350℃ exhibited the most favorable characteristics as a hole transport layer, resulting in the highest power conversion efficiency of 17.88 % when fabricating inverted perovskite solar cells using this film.