• The Transactions of the Korean Institute of Electrical Engineers C
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• v.52 no.6
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• pp.235-240
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• 2003

In this paper, we present the fabrication and the characteristic analysis of sequential lateral solidification(SLS) poly-Si thin film transistors(TFT's) with molybdenum gate for active matrix liquid displays (AMLCD's) pixel controlling devices. The molybdenum gate is applied for the purpose of low temperature processing. The maximum processing temperature is 55$0^{\circ}C$ at the dopant thermal annealing step. The SLS processed poly-Si film which is reduced grain and grain boundary effect, is applied for the purpose of electrical characteristics improvements of poly-Si TFT's. The fabricated low temperature SLS poly-Si TFT's had a varying the channel length and width from 10${\mu}{\textrm}{m}$ to 2${\mu}{\textrm}{m}$. And to analyze these devices, extract electrical characteristic parameters (field effect mobility, threshold voltage, subthreshold slope, on off current etc) from current-voltage transfer characteristics curve. The extract electrical characteristic of fabricated low temperature SLS poly-Si TFT's showed the mobility of 100~400cm$^2$/Vs, the off current of about 100pA, and the on/off current ratio of about $10^7$. Also, we observed that the change of grain boundary according to varying channel length is dominant for the change of electrical characteristics more than the change of grain boundary according to varying channel width. Hereby, we comprehend well the characteristics of SLS processed poly-Si TFT's witch is recrystallized to channel length direction.

• The Transactions of The Korean Institute of Electrical Engineers
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• v.60 no.6
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• pp.1169-1174
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• 2011

CdTe thin-film solar cell technology is well known that it can theoretically improve its conversion efficiency and manufacturing costs compared to the conventional silicon solar cell technology, due to its optical band gap energy (about 1.45eV) for solar energy absorption, high light absorption capability and low cost requirements for producing solar cells. Although the prior studies obtained the high light absorption, CdTe thin film solar cell has not been come up to the sufficient efficiency yet. So, doping method was selected for the improvement of the electrical characteristics in CdTe solar cells. Some elements including Cu, Ag, Cd and Te were generally used for the p-dopant as substitutional acceptors in CdTe thin film. In this study, the sputtering-deposited CdTe thin film was immersed in $AgNO_3$ solution for ion exchange method to dope Ag ions. The effects of immersion temperature and Ag-concentration were investigated on the optical properties and electrical characteristics of CdTe thin film by using Auger electron spectroscopy depth-profile, UV-visible spectrophotometer, and a Hall effect measurement system. The best optical and electrical characteristics were sucessfully obtained by Ag doping at high temperature and concentration. The larger and more uniform diffusion of Ag ions made increase of the Ag ion density in CdTe thin film to decrease the series resistance as well as mede the faster diffusion of light by the metal ions to enhance the light absorption.

• 한국신재생에너지학회:학술대회논문집
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• 2011.05a
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• pp.107.1-107.1
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• 2011

현재 상용으로 많이 사용되는 p-type 태양전지는 Dopant로 사용된 Boron이 $O_2$와 결합하면서 Light induced degradation이 발생하여 태양 전지 효율의 감소를 불러일으키는 단점이 있다. 이러한 문제를 해결하기 위하여 여러 가지 방법들이 제시되었는데 일반적으로 n-type wafer를 이용함으로써 Light induced degradation을 해결하는 방법이 주로 사용된다. n-type 태양전지를 제조함에 있어서 보다 높은 효율을 달성하기 위하여 태양전지 후면 구조에 local contact 개념을 도입하여 rear local emitter를 형성함으로써 전체적인 효율 증가를 도모하였다. 이러한 local contact을 제조하기 위해서는 전기적으로 구조적으로 고려할 사항들이 여러 가지 존재한다. 따라서 우리는 이러한 고려 사항들을 실험적인 방법으로 결정하는 것이 아니라, 정교한 변수 통제를 이용한 시뮬레이션으로 최종적인 효율 상승을 가져오는 조건을 찾으려고 한다. 이때 사용될 수 있는 시뮬레이션은 여러 가지 종류가 존재하는데 우선 상용 태양전지의 해석에 가장 많이 사용되는 PC1D프로그램이 있다. 그러나 PC1D의 경우에는 1차원의 해석만 가능하기 때문에 local contact의 2차원 이상의 구조 변화에 따른 최종적인 효율을 계산하는데 무리가 따르게 된다. 따라서 2차원 이상의 형상에 대한 분석이 가능한 프로그램을 이용하여 실제 셀에서 일어나는 현상을 더 정밀하게 모사함으로써 local contact에서 일어나는 전기적, 구조적 변화가 최종적인 효율에 어떻게 영향을 미치는지를 파악해볼 것이며, 어떤 구조를 선택하였을 때 가장 높은 효율을 달성할 수 있는지 알아보려고 한다.

• Journal of the Korean Institute of Illuminating and Electrical Installation Engineers
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• v.27 no.6
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• pp.95-99
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• 2013

Furnace is currently the most important doping process using POCl3 in solar cell. However furnace need an expensive equipment cost and it has to purge a poisonous gas. Moreover, furnace typically difficult appling for selective emitters. In this study, we developed a new atmospheric pressure plasma source, in this procedure, we research the atmospheric pressure plasma doping that dopant is phosphoric acid($H_3PO_4$). Metal tube injected Ar gas was inputted 5 kV of a low frequency(scores of kHz) induced inverter, so plasma discharged at metal tube. We used the P type silicon wafer of solar cell. We regulated phosphoric acid($H_3PO_4$) concentration on 10% and plasma treatment time is 90 s, 150 s, we experiment that plasma current is 70 mA. We check the doping depth that 287 nm at 90 s and 621 nm at 150 s. We analysis and measurement the doping profile by using SIMS(Secondary Ion Mass Spectroscopy). We calculate and grasp the sheet resistance using conventional sheet resistance formula, so there are 240 Ohm/sq at 90 s and 212 Ohm/sq at 150 s. We analysis oxygen and nitrogen profile of concentration compared with furnace to check the doped defect of atmosphere.

• Journal of the Korean Institute of Telematics and Electronics
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• v.25 no.11
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• pp.1342-1349
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• 1988

The dependence of the etch rates of differently doped poly-Si films on the gas composition, the chamber pressure and the RF power was investigated in detail. The highest anisotropy and the lowest CD loss were achieved at the $SF_6$-rich compositions, i.e., $Cl_2:SF_6$=17:33 (SCCM), in the $POCl_3$-doped poly-Si. The etch rates increased for n-type dopant (phosphorus), while decreased for p-type (boron) with increasing the doping levels irrespective of plasma parameters. And from the results of the activation of doped poly-Si films the active carrier concentrations as well as the doping concentrations were found to be responsible for the increase of the etch rate of the phosphorus-doped poly-Si.

• JSTS:Journal of Semiconductor Technology and Science
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• v.14 no.1
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• pp.8-22
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• 2014

In the past few decades, CMOS logic technologies and devices have been successfully developed with the steady miniaturization of the feature size. At the sub-30-nm CMOS technology nodes, one of the main hurdles for continuously and successfully scaling down CMOS devices is the parametric failure caused by random variations such as line edge roughness (LER), random dopant fluctuation (RDF), and work-function variation (WFV). The characteristics of each random variation source and its effect on advanced device structures such as multigate and ultra-thin-body devices (vs. conventional planar bulk MOSFET) are discussed in detail. Further, suggested are suppression methods for the LER-, RDF-, and WFV-induced threshold voltage (VTH) variations in advanced CMOS logic technologies including the double-patterning and double-etching (2P2E) technique and in advanced device structures including the fully depleted silicon-on-insulator (FD-SOI) MOSFET and FinFET/tri-gate MOSFET at the sub-30-nm nodes. The segmented-channel MOSFET (SegFET) and junctionless transistor (JLT) that can suppress the random variations and the SegFET-/JLT-based static random access memory (SRAM) cell that enhance the read and write margins at a time, though generally with a trade-off between the read and the write margins, are introduced.

• Bulletin of the Korean Chemical Society
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• v.27 no.11
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• pp.1809-1814
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• 2006

The L-Valinate anion coordinating zinc complex, [$Zn(val)_2(H-2O)$], was isolated and structurally characterized by single crystal X-ray crystallography. The crystal possess orthorhombic symmetry with a space group $P2_12_12_1$, Z = 4, and a = 7.4279(2)$\AA$, b = 9.4342(2)$\AA$, c =20.5862(7)$\AA$ respectively. The compound features a penta-coordinate zinc ion in which the two valine anion molecules are directly coordinating the central zinc metal ion via their N (amine) and O (carboxylate) atoms, and an additional coordination to zinc is made by water molecule (solvent) to form a distorted square pyramidal structure. In addition, further synthesis of the valine capped ZnS:Mn nanocrystal from the reaction of [$Zn(val)_2(H-2O)$] precursor with $Na_2S$ and 1.95 weight % of $Mn^{2+}$ dopant is described. Obtained valine capped nanocrystal was water dispersible and was optically characterized by UV-vis and solution PL spectroscopy. The solution PL spectrum for the valine capped ZnS:Mn nanocrystal showed an excitation peak at 280 nm and a very narrow emission peak at 558 nm respectively. The measured and calculated PL efficiency of the nanocrystal in water was 15.8%. The obtained powders were characterized by XRD, HR-TEM, and EDXS analyses. The particle size of the nanocrystal was also measured via a TEM image. The measured average particle size was 3.3 nm.

• Advances in nano research
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• v.12 no.5
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• pp.457-465
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• 2022

The potentials of Ni_xZn_1-xFe₂O₄ (x = 0.0, 0.2, 0.4, 0.6, 0.8 and 1.0) nanoadsorbents were investigated for removal of Cd and Cr from contaminated water from an electroplating industry in Himachal Pradesh, India. Optimal values were recorded under batch adsorption experiments performed to remove dissolved heavy metal ions from industrial wastewater. The specific surface area (SSA) of nanoadsorbents perceived to vary in a range 35.75-45.29 cm²/g and was calculated from the XRD data. The influence of two operating parameters, contact time and dopant (Ni) concentration was also investigated at pH ~7 with optimum dosage. Kinetic studies were conducted within a time range of 2-10 min with rapid adsorption of cadmium and chromium ions onto Ni_0.2Zn_0.8Fe₂O₄ nanoadsorbents. Pseudo-second-order kinetic model was observed to be well fitted with the adsorption data that confirmed the only existence of chemisorption throughout the adsorption process. The maximum adsorption efficiency values observed for Cd and Cr were 51.4 mg/g and 40.12 mg/g, respectively for different compositions of prepared series of nanoadsorbents. The removal percentage of Cd and Cr was found to vary in a range of 47.7%-95.25% and 21%-50% respectively. The prepared series of nanoferrite found to be suitable enough for adsorption of both heavy metal ions.

• Proceedings of the Korean Vacuum Society Conference
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• 2012.08a
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• pp.308-309
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• 2012

One of the critical issues in the growth of multijunction solar cell is the formation of a highly doped Esaki interband tunnel diode which interconnects unit cells of different energy band gap. Small electrical and optical losses are the requirements of such tunnel diodes [1]. To satisfy these requirements, tens of nanometer thick gallium arsenide (GaAs) can be a proper candidate due to its high carrier concentration in low energy band gap. To obtain highly doped GaAs in molecular beam epitaxy, the temperatures of Si Knudsen cell (K-cell) for n-type GaAs and Be K-cell for p-type GaAs were controlled during GaAs epitaxial growth, and the growth rate is set to 1.75 A/s. As a result, the doping concentration of p-type and n-type GaAs increased up to $4.7{\times}10^{19}cm^{-3}$ and $6.2{\times}10^{18}cm^{-3}$, respectively. However, the obtained n-type doping concentration is not sufficient to form a properly operating tunnel diode which requires a doping concentration close to $1.0{\times}10^{19}cm^{-3}$ [2]. To enhance the n-type doping concentration, n-doped GaAs samples were grown with a lower growth rate ranging from 0.318 to 1.123 A/s at a Si K-cell temperature of $1,180^{\circ}C$. As shown in Fig. 1, the n-type doping concentration was increased to $7.7{\times}10^{18}cm^{-3}$ when the growth rate was decreased to 0.318 A/s. The p-type doping concentration also increased to $4.1{\times}10^{19}cm^{-3}$ with the decrease of growth rate to 0.318 A/s. Additionally, bulk resistance was also decreased in both the grown samples. However, a transmission line measurement performed on the n-type GaAs sample grown at the rate of 0.318 A/s showed an increased specific contact resistance of $6.62{\times}10^{-4}{\Omega}{\cdot}cm^{-2}$. This high value of contact resistance is not suitable for forming contacts and interfaces. The increased resistance is attributed to the excessively incorporated dopant during low growth rate. Further studies need to be carried out to evaluate the effect of excess dopants on the operation of tunnel diode.

• Proceedings of the Korean Vacuum Society Conference
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• 2015.08a
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• pp.170.1-170.1
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• 2015

안티모니 (Sb)를 기반으로 한 제2형 초격자 (Type II superlattice, T2SL)구조 적외선 검출기 연구는 2000년대 들어 Sb 계열의 화합물 반도체 성장 기술이 발전함에 따라 HgCdTe (MCT), InSb, 양자우물 적외선 검출기 (QWIP)를 대체할 수 있는 고성능의 양자형 적외선 검출 소재로 부상하였으며, 현재 전 세계적으로 활발한 연구가 진행되고 있다. 특히, 기존의 양자형 적외선 검출소자에 비해 전자의 유효질량이 상대적으로 커서 밴드 간의 투과전류가 줄어들 뿐만 아니라, 전자와 정공이 서로 다른 물질 영역에 분포하여 Auger 재결합률을 효과적으로 줄일 수 있어 상온 동작이 가능한 소재로 주목을 받고 있다. 또한, T2SL 구조는 초격자를 구성하는 물질의 두께나 조성 변화를 통한 밴드갭 변조가 용이하여 단파장에서 장파장 적외선에 이르는 광범위한 파장 대역에서 동작이 가능할 뿐만 아니라 구조적 변화를 통해 이중 대역을 동시에 검출 할 수 있는 차세대 적외선 열영상 소자로 알려져 있다. 본 연구에서는 분자선 에피택시(MBE)법을 이용하여 300 주기의 InAs/GaSb (10/10 ML) 제2형 초격자 구조를 성장하여 적외선 검출소자를 제작하였다. 제2형 초격자 구조를 구성하는 물질계에 p-type dopant인 Be을 이용하여 각각 도핑 농도가 다른 시료를 성장하였다. 이때 p-type 도핑 농도는 각각 $1/5/10{\times}10^{15}cm^{-3}$로 변화를 주었다. 성장된 시료의 구조적 특성 분석을 위해 고분해능 X선 회절 (High resolution X-ray diffraction, HRXRD)법을 이용하였으며, 초격자 한 주기의 두께가 6.2~6.4 nm 로 설계된 구조와 동일하게 성장됨을 확인 하였으며, 1차 위성피크의 반치폭은 30~80 arcsec로 우수한 결정성을 가짐을 확인하였다. 적외선 검출을 위한 $410{\times}410{\mu}m^2$ 크기의 단위 소자 공정을 진행하였으며 이때 적외선의 전면 입사를 위해 소자 위에 $300{\mu}m$의 윈도우 창을 제작하였다. 단위 소자의 측벽에는 표면 누설 전류가 흐르는데 이를 방지하기 위해서 표면보호막을 증착하였다. 적외선 검출 소자의 전기적 특성 평가를 위해 각각의 시료의 암전류 (dark current)와 파장별 반응 (spectral response)을 온도별로 측정하여 비교 및 분석하였다.