• Proceedings of the Korean Powder Metallurgy Institute Conference
• /
• 2006.09a
• /
• pp.85-86
• /
• 2006

A theoretical model is applied to the analysis of thermomechanical properties of $Al-SiC_p$ FGMs in this study. Functionally graded $Al-SiC_p$ composites ($Al-SiC_p$ FGMs) consisted with 10 layers gradually changing volume fractions of Al and $SiC_p$ were fabricated using the pressureless infiltration technique. $Al-SiC_p$ FGMs plates of total thickness of 3mm, 5mm and 7mm with fairly uniform distribution and compositional gradient of $SiC_p$ reinforcement in the Al matrix throughout the thickness was successfully fabricated. The curvature of $Al-SiC_p$ FGM plates was measured to check the internal stress distribution predicted via a theoretical model for the analysis of thermo-mechanical deformation. The evolution of curvature and also internal stresses in response to temperature variations could be predicted for the different combinations of geometric thickness of FGM plates. Theoretical prediction of thermally induced stress distribution makes it possible to design FGM structures without any critical failure during the usage of them.

• Solar Energy
• /
• v.20 no.1
• /
• pp.11-20
• /
• 2000

To get more insight into the buffering effects of the p-${\mu}c$-Si:H Inserted at the p-a-SiC:H/i-a-Si:H interface, we present a systematic numerical simulation using Gummel-Schafetter method. The reduced recombination loss at the p/i interface due to a constant bandgap buffer is analysed in terms of the variation of the p/i Interface region with a short lifetime and the characterisitics of the buffer such as mobility bandgap, acceptor concentration, and D-state density. The numerical modeling on the constant bandgap buffer demonstrates clearly that the buffering effects of the thin p-${\mu}c$-Si:H originate from the shrinkage of highly defective region with a short lifetime in the vicinity of the p/i interface.

• Journal of Korea Foundry Society
• /
• v.15 no.3
• /
• pp.262-271
• /
• 1995

It is well known what is impossible to refine primary and eutectic Si simultaneously by addition of both Cu-P and Sr(or Na). Because of the formation of compound $Sr_3P_2(or Na_3P)$ in the melt, in the result, both effects disappear. In this study Al-Cu-P alloy that comprises AlP compounds inside is added in the melt with Sr simultaneously. As AlP compounds that act on nucleation sites of primary Si are not formed but added directly an the melt, it is difficult to form $Sr_3P_2$ by reaction with Sr. Therefore it is possible to refine primary and eutectic Si simultaneously in the general casting process by use of Al-Cu-P alloy and Sr.

• Transactions of Materials Processing
• /
• v.13 no.7
• /
• pp.608-613
• /
• 2004

Mechanical properties of hypereutectic Al-Si alloy are influenced by the size and distribution of primary Si. To investigate the effects of P addition and holding time, hypereutectic Al-Si alloys with various amount of P content were produced in the lab. Then, the size and distribution of primary Si were examined respectively. Mechanical properties of hardness, tensile strength and wear resistance were analyzed in conjunction with the microstructural variations in alloys.

• Journal of the Korean Institute of Telematics and Electronics
• /
• v.27 no.12
• /
• pp.1859-1864
• /
• 1990

The effect of H+ and OH- ion concentrations at doped Si semiconductor/pH buffer solution interfaces were investigated in terms of cyclic current-voltage characteristics. The effects of space charge on oppositely doped Si semiconductors, i.e., p-and n-Si semiconductors, can be effectively applied to study the pH effects and the slow surface states at the interfaces. The adsorptions of H+ and OH- inons on the doped Si semiconductor surfaces are physical adsorption rather than chemical adsorption. Adsorptive processes and charging effects of the slow surface states can be explained as the potential barrier variations and the related current-voltage characteristics at the interfaces. Under forward bias, the charged slow surface states on the p-and n-si semiconductor surface are donor and acceptor slow surface states, respectively. The effects of minority carriers on the slow surface states can be neglected at the doped Si semiconductor interfaces.

• Korean Journal of Materials Research
• /
• v.7 no.2
• /
• pp.145-151
• /
• 1997

Remelting of $A-Si/SiC_{p}$ composites followed by isothermal holding and solidification, leads ro the settling of Sic particles to the bottom of the mold. With the isothermal holding time for molten $A-Si/SiC_{p}$ composites. the particle free zone increases rapidly up to approximately first 30 minutes of the holding time. Experimental resulls of the particle settling confirm that the larger SIC particles sink faster tlun the sniiller particles. An increase in volume fraction of Sic particles decreases the setrling velocity of the particles.

• Korean Journal of Materials Research
• /
• v.8 no.10
• /
• pp.890-897
• /
• 1998

The direct wafer bonding between n-InP(001) wafer and the ${Si}_3N_4$(200 nm) film grown on the InP wafer by PECVD method was investigated. The surface states of InP wafer and ${Si}_3N_4$/InP which strongly depend upon the direct wafer bonding strength between them when they are brought into contact, were characterized by the contact angle measurement technique and atomic force microscopy. When InP wafer was etched by $50{\%}$ HF, contact angle was $5^{\circ}$ and RMS roughness was $1.54{\AA}$. When ${Si}_3N_4$ was etched by ammonia solution, RMS roughness was $3.11{\AA}$. The considerable amount of initial bonding strength between InP wafer and ${Si}_3N_4$/InP was observed when the two wafer was contacted after the etching process by $50{\%}$ HF and ammonia solution respectively. The bonded specimen was heat treated in $H^2$ or $N^2$, ambient at the temperature of $580^{\circ}C$-$680^{\circ}C$ for lhr. The bonding state was confirmed by SAT(Scannig Acoustic Tomography). The bonding strength was measured by shear force measurement of ${Si}_3N_4$/InP to InP wafer increased up to the same level of PECVD interface. The direct wafer bonding interface and ${Si}_3N_4$/InP PECVD interface were chracterized by TEM and AES.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
• /
• v.23 no.3
• /
• pp.228-233
• /
• 2010

We studied the optical characteristics correlated with low dielectric constants of low-k SiOCH thin films through ellipsometry. The low-k SiOCH thin films were prepared by CCP-PECVD method using BTMSM(Bis-trimethylsilylmethane) precursors deposited on p-Si wafer. The Si-O-CHx, Si-O-Si, Si-CHx, CHx and Si-H bonding groups were specified by FTIR spectroscopic spectra, and the groups coupled with the nano-porous structural organic/inorganic hybrid-type of SiOCH thin films which has extremely low dielectric constant close to 2.0. The structural groups includes highly dense pore as well as ions in SiOCH thin films affecting to complex refraction characteristics of single layer on the p-Si wafer. The structural complexity originate the complex refractive constants of the films, and resulted the elliptical polarization of the incident linearly polarized light source of Xe-light source in the range from 190 nm to 2100 nm. Phase difference and amplitude ratio between s wave and p wave propagating through SiOCH thin film was studied. After annealing, the amplitude of p wave was reduced more than s wave, and phase difference between p and s wave was also reduced.

• Journal of Sensor Science and Technology
• /
• v.2 no.1
• /
• pp.29-34
• /
• 1993

a-Si : H photodiodes for image sensor have been fabricated and characterized. Photosensitivity of a ITO/a-Si : H/Al photodiode without blocking layer was 0.7 under the applied voltage of 5 V and peak spectral sensitivity in visible region was found at 620 nm. Dark current of ITO/a-SiN : H/a-Si : H/p-a-Si : H/Al photodiode was suppressed by hole blocking layer and electron blocking layer at the value of lower than 1.5 pA to the applied voltage of 10 V. Also maximum photosensitivity was about 1 under the applied voltage of 3 V and peak spectral sensitivity was found at 540 nm.

• Transactions of Materials Processing
• /
• v.7 no.2
• /
• pp.158-167
• /
• 1998

Hot restoration mechanism flow stress and stain of the Al2024 composites reinforced with 1,8,15,36, and $44{\mu}m\;SiC_p$(10 vol. %) were studied by hot torsion tests. The hot restoration mechanism of all the composites was found to be dynamic recrystallization(DRX) at $320^{\circ}C$ while that of the composites reinforced with 1 and $8{\mu}m\;SiC_p$ was found to be dynamic recovery(DRX) at $480^{\circ}C$. It was found that the Al2024 composite with $15{\mu}m\;SiC_p$ showed the highest flow stress(${\sim}$223 MPa) at $320^{\circ}C$ under a strain rate of 1.0/sec. Also the highest flow strain of the composites was obtained at $430^{\circ}C$. The com-posites reinforced with 1 and $8{\mu}m\;SiC_p$ showed lower flow stress and higher flow strain at $480^{\circ}C$ than those of the composites reinforced with 15, 36, and $44\;{\mu}m\;SiC_p$ These result were discussed in relation to the transition of the hot restoration mechanism. $DRX{\leftrightarrow}DRV$. The dependence of flow stress on strain rate and temperature was attempted to fit with the hyperbolic sine equation ($\dot{\varepsilon}=A[sinh({\alpha}{\cdot}{\sigma}_p]^n$ exp(-Q/RT)and Zener-Hollomon parameter($Z=\;\dot{\varepsilon}\;exp(Q/RT))$.