• 한국전기전자재료학회논문지
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• 제13권11호
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• pp.908-913
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• 2000

CoSi$_2$/p+/n diodes(bilayer diodes) were fabricated by using epitaxial CoSi$_2$grown from Co/Ti bilayer as a diffusion source. The I-V characteristics of p+/n diodes were measured and compared with those of diode made from Co monolayer (monolayer diode). Monolayer diodes showed typical p+n junction characteristics with the leakage current of as low as 10$^{-12}$ A and forward current 6-orders higher than the leakage current, when drive-in annealed at 90$0^{\circ}C$ for 20 sec.. On the other hand, bilayer diodes showed the Schottky-like behaviors with forward currents rather higher than those of monolyer diodes, but with too high leakage currents, when drive-in annealed at $700^{\circ}C$ or higher. However, when the annealing temperature was lowered to $700^{\circ}C$ and annealing time was increased to 60 sec., the leakage current was reduced to 10$^{-11}$ A and thus sho3wed typical diode characteristics. The high leakage currents for diodes annealed at $700^{\circ}C$ or higher was attributed to Shannon contacts formed due to unremoved Co-Ti-Si precipitates. But when annealed at 50$0^{\circ}C$, B ions diffused in the direction of the surface layer, and thus the leakage currents were reduced by removing Shannon contacts.

• 한국재료학회지
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• 제4권8호
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• pp.877-887
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• 1994

강도, 소전율, 스프링성, 내열성 및 굽힘 가공성등의 적절한 조화를 갖는 콘넥팅재료를 개발하기 위하여 Cu-Ni-Si-P합금에 대하여 연구하였다. Ni와 Si의 조성을 달리한 3종류의 합금을 용해, 주조하여 약 $900^{\circ}C$에 열간압연 후 수냉하고, 그 후 냉간압연하여 $450^{\circ}C$. $500^{\circ}C$ 및 $550^{\circ}C$에서 시효처리한 후 기계적 성질 변화와 도전율 등을 조사하였다. 고강도와 고존도율의 적절한 조화를 나타내는 Cu-2.7%Ni-0.53% Si-0.029%P 합금을 만들었다. 합금 1을 0.5mm두께의 콘넥팅재료로 가공한 후 여러가지 특성은 인청동(C 5210R-H)과 황동(C2600R-EH)에 비해 우수한 것으로 평가되었다.

• 센서학회지
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• 제7권6호
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• pp.426-431
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• 1998

본 논문에서는 THAH/IPA/pyrazine 용액에서의 전기화학적 식각정지특성을 기술한다. THAH/IPA/pyrazine 용액에서의 n-형과 p-형의 Si에 대한 I-V 곡선이 얻어졌다. p-형 Si에 대한 OCP(개방회로전압)과 PP(보호막생성 전압)은 각각 -1.2 V와 0.1 V이고, n-형에 대해서는 -1.3 V와 -0.2 V로 각각 나타났다. p-형과 n-형 Si 모두 PP점보다 양의 전압에서 식각율이 급속히 감소하였다. 또한 THAH/IPA/pyrazine 용액에서의 식각정지특성을 관찰하였다. pn 접합부에서의 정확한 식각정지에 의해서 epi. 층의 두께에 상응하는 Si 다이어프램을 제작할 수 있었다. 최적 이방성 식각조건인 TMAH 25 wt.%/IPA 17 vol.%/pyrazine 0.1g/100ml에서 식각률이 가장 높기 때문에 식각소요시간이 크게 감소하였다.

• Korean Journal of Acupuncture
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• 제22권3호
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• pp.27-40
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• 2005

Objective : The purpose of this study was to verify the effect of pressing at Kyeun-Jung$(G_{21})$, Gok-Ji$(LI_{11})$ and Zok-Sam-Li$(S_{36})$ with Si-acupuncture on the decreasing of blood pressure and headache on the stroke patients. Methods : This study was one-group pretest-posttest experimental design. The subjects of this study were 30 patients who were hospitalized in stroke center of hospital located in Ulsan from September 27, to November 12, 2004. They had over 160/90mmHg blood pressure but didn't take any hypotensive drugs. The instruments were the Si-acupuncture. the blood pressure and headache scale using Visual Analogue Scale(VAS). Results : 1. With administration of Si-acupuncture, the blood pressure intensity decreased statistical significantly(systolic blood pressure: t=13.310, p=0.000, diastolic blood pressure: t=11.788, p=0.000). After 30 minutes with administration of Si-acupuncture, the blood pressure intensity decreased statistical significantly(systolic blood pressure: t=15.130, p=0.000, diastolic blood pressure: t=12.479, p=0.000). 2. With administration of Si-acupuncture, the headache intensity not decreased statistical significantly'(t=0.372, p=0.712). After 30 minutes with administration of Si-acupuncture, the headache intensity decreased statistical significantly'(t=7.370, p=0.000) Conclusion : According to above, it was verified that the pressing at Kyeun-Jung, Gok-Ji and Zok-Sam-Li with Si-acupuncture was effective in decreasing of blood pressure and headache on the stroke patients.

• 한국진공학회:학술대회논문집
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• 한국진공학회 2012년도 제43회 하계 정기 학술대회 초록집
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• pp.232-232
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• 2012

The doping of semiconducting elements is essential for the development of silicon quantum dot (QD) solar cells. Especially the doping elements should be activated by substitution at the crystalline sites in the crystalline silicon QDs. However, no analysis technique has been developed for the analysis of the activated dopants in silicon QDs in $SiO_2$ matrix. Secondary ion mass spectrometry (SIMS) is a powerful technique for the in-depth analysis of solid materials and the impurities analysis of boron and phosphorus in semiconductor materials. For the study of diffusion behaviour of B and P by SIMS, Si/$SiO_2$ multilayer films doped by B or P were fabricated and annealed at high temperatures for the activated doping of B and P. The distributions of doping elements were analyzed by SIMS. Boron found to be preferentially distributed in Si layer rather than the $SiO_2$ layer. Especially the B in the Si layers was separated to two components of an interfacial component and a central one. The central component was understood as the activated elements. On the other hand, phosphorus did not show any preferred diffusion.

• Toxicological Research
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• 제17권
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• pp.257-261
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• 2001

Recently, a traditional medicine called Gouteng-san, which consists of eleven herbs, was reported to be effective in treating vascular dementia with a double-blind, placebo-controlled study. Gout-eng-san is also used for patients with vascular dementia in combination with Si-Wu-Tang. The effect of Gouteng-san and Si-Wu-Tang on deficit of learning behavior was investigated using step-down passive avoidance task in mice. Hot-water extract of Gouteng-san (1.5 and 6 g/kg, p.o.) significantly prolonged the step-down latency shortened by scopolamine. The extract of Uncaria hook (150 mg/kg, p.o.), one of the component herb of Gouteng-san, significantly prevented the decrease in the latency after scopolamine. Hot-water extract of Si-Wu-Tang (1.5 and 6 g/kg of dried herbs, p.o.) prevented dose-dependently scopola-mine-induced disruption qf learning behavior. Si-Wu-Tang also prevented the ischemia-induced deficit of learning behavior. Both hot water extract of peony and angelica (1.5 g/kg, p.o.), which are component herbs qf Si-Wu-Tang, prevented the scopolamine-induced learning behavior deficit. Scopolamine (10 uM) suppressed long-term potentiation (LTP) of population spike in the CA1 region of the rat hippocampal slices. Peoniflorin (0.1~ 1uM) extracted from paeony root significantly ameliorated scopolamine-induced inhibition of LTR These results suggest that improvement of deficit of learning behavior by Gouteng-san and Si-Wu-Tang is mediated by direct and/or indirect activation of the cholinergic system in the brain.

• 한국진공학회:학술대회논문집
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• 한국진공학회 2014년도 제46회 동계 정기학술대회 초록집
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• pp.282.1-282.1
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• 2014

산소 플라즈마 전처리가 ZnO/Si 박막 및 계면에 미치는 영향과 그것이 n-ZnO/p-Si 이종접합 다이오드의 전기적 특성에 관여하는 상관관계 등을 조사하였다. ZnO 박막을 Si 기판 위에 Sputter법으로 증착하였으며, 양질의 n-ZnO/p-Si 다이오드를 제작하기 위하여 산소 플라즈마를 이용하여 Si 기판의 표면을 전처리하는 기법을 선택하였다. 산소 플라즈마에 의해 전처리된 시편의 경우, (002) ZnO 보다 (101) ZnO가 더 우세하게 성장되었으며, (101) ZnO의 완화된 c-축 배향성 때문에 수평방향으로의 박막 성장이 이루어졌고, 그로 인해 ZnO 박막의 결정립 크기가 상대적으로 증가하는 것이 관측되었다. 이처럼 (101) 방향으로 성장된 ZnO 박막의 경우, 산소결공 등의 자생결함 밀도가 상대적으로 높아져 결국 캐리어 농도의 증가를 야기시켰다. 이러한 산소 플라즈마 전처리 효과는 n-ZnO/p-Si 이종접합 다이오드의 전도 특성과 밀접한 관련이 있으며, 특히 다이오드의 전도 특성을 현저히 개선시키는 것으로 관측되었다.

• 한국세라믹학회지
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• 제30권8호
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• pp.615-622
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• 1993

In order to increase chemical durability of thin films in binary system B2O3-SiO2 and Al2O3-SiO2 on the slide glass by the dip-coating technique from TEOS(Tetraethyl Orthosilicate) and boric acid or aluminum nitrate, phosphoric acid(5~20mol%) was added, respectively. Corrosion of acid and alkali of samples treated with 1N, HCl, NaOH and distilled water at 10$0^{\circ}C$ for 15 minute, were measured IR transmittance and variance of transmittance at visible range. Surface structure of thin film was investigated with SEM and formation of crystal phase according to additiion of phosphoric acid was measrued with XRD. In Al2O3-SiO2 system, change of remarkable characteristic was not obtained at the addition of P2O5 but transmittance of thin film was decreased with addition of P2O5 in B2O3-SiO2 system.

• 전기전자학회논문지
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• 제20권2호
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• pp.181-183
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• 2016

탄화규소(Silicon Carbide) 기반의 1200 V급 Merged Pin Schottky(MPS) 다이오드의 구조를 2D-atlas simulation tool을 사용하여 최적화 및 설계하였다. 최적화된 항복전압과 온-저항 값을 얻기 위해 본 소자에서 중요한 파라미터인 P-Grid의 도핑농도와 에피층의 도핑농도를 각각 $2{\sim}10{\times}10^{17}cm^{-3}$, $2{\sim}10{\times}10^{16}cm^{-3}$으로 변화시키면서 소자의 전기적 특성을 분석하였으며, 그 후 P-Grid의 Space값을 $1{\sim}5{\mu}m$로 설계하여 이에 따른 항복전압과 온-저항의 값을 확인하였다. 항복전압과 온-저항은 서로 trade-off 관계에 있기 때문에 각 변수에서 도출된 값들을 Baliga's Figure Of Merit (BFOM)식에 대입하여 비교하였다. 그 결과 고전압 소자에 적용 가능한 1200 V급 4H-SiC MPS다이오드를 최적화 및 설계를 도출하였다.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2009년도 하계학술대회 논문집
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• pp.195-196
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• 2009

This paper describes the fabrication and characteristics of polycrystalline 3C-SiC thin film diodes for extreme environment applications, in which the this thin film was deposited onto oxidized Si wafers by APCVD using HMDS In this work, the optimized growth temperature and HMDS flow rate were $1,100^{\circ}C$ and 8sccm, respectively. A Schottky diode with a Au, Al/poly 3C-SiC/$SiO_2$/Si(n-type) structure was fabricated and its threshold voltage ($V_d$), breakdown voltage, thickness of depletion layer, and doping concentration ($N_D$) values were measured as 0.84V, over 140V, 61nm, and $2.7{\times}10^{19}cm^2$, respectively. To produce good ohmic contact, Al/3C-SiC were annealed at 300, 400, and $500^{\circ}C$ for 30min under a vacuum of $5.0{\times}10^{-6}$Torr. The obtained p-n junction diode fabricated by poly 3C-SiC had similar characteristics to a single 3C-SiC p-n junction diode.