• Journal of IKEEE
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• v.22 no.1
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• pp.205-208
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• 2018

In this work, we performed reverse- and forward-gate bias stress tests on normally-off AlGaN/GaN high electron mobility transistors(HEMTs) with p-AlGaN-gate for reliability assessment. Inverse piezoelectric effect, commonly observed in Schottky-gate AlGaN/GaN HEMTs during reverse bias stress, was not observed in p-AlGaN-gate AlGaN/GaN HEMTs. Forward gate bias stress tests revealed distinct degradation of p-AlGaN-gate devices exhibiting sudden increase of gate leakage current. We suggest that forward gate bias stress tests should be performed to define the failure criteria and assess the reliability of normally off p-AlGaN-gate GaN HEMTs.

• Bulletin of the Korean Mathematical Society
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• v.50 no.3
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• pp.983-991
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• 2013

For each real number $n$ > 6, we prove that there is a sequence $\{pk(n,z)\}^{\infty}_{k=1}$ of fourth degree self-reciprocal polynomials such that the zeros of $p_k(n,z)$ are all simple and real, and every $p_{k+1}(n,z)$ has the largest (in modulus) zero ${\alpha}{\beta}$ where ${\alpha}$ and ${\beta}$ are the first and the second largest (in modulus) zeros of $p_k(n,z)$, respectively. One such sequence is given by $p_k(n,z)$ so that $$p_k(n,z)=z^4-q_{k-1}(n)z^3+(q_k(n)+2)z^2-q_{k-1}(n)z+1$$, where $q_0(n)=1$ and other $q_k(n)^{\prime}s$ are polynomials in n defined by the severely nonlinear recurrence $$4q_{2m-1}(n)=q^2_{2m-2}(n)-(4n+1)\prod_{j=0}^{m-2}\;q^2_{2j}(n),\\4q_{2m}(n)=q^2_{2m-1}(n)-(n-2)(n-6)\prod_{j=0}^{m-2}\;q^2_{2j+1}(n)$$ for $m{\geq}1$, with the usual empty product conventions, i.e., ${\prod}_{j=0}^{-1}\;b_j=1$.

• The Pure and Applied Mathematics
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• v.11 no.1
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• pp.15-22
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• 2004

In this paper, we investigate asymptotic stability, oscillation, asymptotic behavior and existence of the period-2 solutions for difference equation $x_{n+1}\;=\;{\alpha}\;+\;\beta{x_{n-1}}^{p}/{x_n}^p$ where ${\alpha}\;{\geq}\;0,\;{\beta}\;>\;0.\;$\mid$p$\mid$\;{\geq}\;1$, and the initial conditions $x_{-1}\;and\;x_0$ are arbitrary positive real numbers.

• Korean Journal of Mathematics
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• v.16 no.3
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• pp.323-334
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• 2008

We define injective and projective representations of quivers with two vertices with n arrows. In the representation of quivers we denote n edges between two vertices as ${\Rightarrow}$ and n maps as $f_1{\sim}f_n$, and $E{\oplus}E{\oplus}{\cdots}{\oplus}E$ (n times) as ${\oplus}_nE$. We show that if E is an injective left R-module, then $${\oplus}_nE{\Longrightarrow[50]^{p_1{\sim}p_n}}E$$ is an injective representation of $Q={\bullet}{\Rightarrow}{\bullet}$ where $p_i(a_1,a_2,{\cdots},a_n)=a_i,\;i{\in}\{1,2,{\cdots},n\}$. Dually we show that if $M_1{\Longrightarrow[50]^{f_1{\sim}f_n}}M_2$ is an injective representation of a quiver $Q={\bullet}{\Rightarrow}{\bullet}$ then $M_1$ and $M_2$ are injective left R-modules. We also show that if P is a projective left R-module, then $$P\Longrightarrow[50]^{i_1{\sim}i_n}{\oplus}_nP$$ is a projective representation of $Q={\bullet}{\Rightarrow}{\bullet}$ where $i_k$ is the kth injection. And if $M_1\Longrightarrow[50]^{f_1{\sim}f_n}M_2$ is an projective representation of a quiver $Q={\bullet}{\Rightarrow}{\bullet}$ then $M_1$ and $M_2$ are projective left R-modules.

• Korean Journal of Mathematics
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• v.21 no.4
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• pp.495-502
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• 2013

Let $\mathcal{T}^{(p)}_n$ be the set of p-ary labeled trees on $\{1,2,{\ldots},n\}$. A maximal decreasing subtree of an p-ary labeled tree is defined by the maximal p-ary subtree from the root with all edges being decreasing. In this paper, we study a new refinement $\mathcal{T}^{(p)}_{n,k}$ of $\mathcal{T}^{(p)}_n$, which is the set of p-ary labeled trees whose maximal decreasing subtree has k vertices.

• Animal Systematics, Evolution and Diversity
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• v.14 no.4
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• pp.335-340
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• 1998

Two new species of the family Irciniidae, Psammocinia wandoensis n.sp. and P.samyangensis n. sp., are described. They were collected from the South Sea, Korea. P. wandoensis n. sp. closely resembles P. rugosa(Lendenfed, 1889)from Australia in morphology, but new species differs from P. rugosa by the filaments. Though P. samyangensis n. sp. is very similar to P. jejuensis, but our species differs from P. Jejuensis by the fibre shape.

• Transactions on Electrical and Electronic Materials
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• v.4 no.6
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• pp.17-20
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• 2003

This paper describes the effect of halogenic gettering during oxide passivation of commercial solar cell with the $N^{+}$-P-$N^{+}$ structure. In order to study the effect of halogenic gettering on $N^{+}$-P-$N^{+}$ structure mono-crystalline silicon solar cell, we performed conventional POCl$_3$ diffusion for emitter formation and oxide passivation in the presence of HCl vapors. The $N^{+}$-P-$N^{+}$ structure based silicon solar cells were found to have higher short circuit current and minority carrier lifetime. Their performance was also found to be superior than the conventional $N^{+}$-P-$N^{+}$ structure based mono-crystalline silicon solar cell. The cell parameters of the $n^{+}$-p-$p^{+}$ and $n^{+}$-p-$n^{+}$ structure based cells, passivated by HCl assisted oxidation were measured. The improvement in $I_{sc}$ was attributed to the effect of the increased diffusion length of minority carriers, which came from the halogenic gettering effect during the growth of passivating oxide. The presence of chlorine caused gettering of the cells by removing the heavy metals, if any. The other advantage of the presence of chlorine was the removal of the diffusion induced (in oxygen environment) stacking faults and line defects from the surfaces of the silicon wafers. All these effects caused the improvement of the minority carrier lifetime, which in-turn helped to improve the quality of the solar cells.

• Journal of the Korean Mathematical Society
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• v.57 no.3
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• pp.747-775
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• 2020

In this work we investigate the nonlocal elliptic equation with critical Hardy-Sobolev exponents as follows, $$(P)\;\{(-{\Delta}_p)^su={\lambda}{\mid}u{\mid}^{q-2}u+{\frac{{\mid}u{\mid}^{p{^*_s}(t)-2}u}{{\mid}x{\mid}^t}}{\hspace{10}}in\;{\Omega},\\u=0{\hspace{217}}in\;{\mathbb{R}}^N{\backslash}{\Omega},$$ where Ω ⊂ ℝ^N is an open bounded domain with Lipschitz boundary, 0 < s < 1, λ > 0 is a parameter, 0 < t < sp < N, 1 < q < p < p^∗_s where $p^*_s={\frac{N_p}{N-sp}}$, $p^*_s(t)={\frac{p(N-t)}{N-sp}}$, are the fractional critical Sobolev and Hardy-Sobolev exponents respectively. The fractional p-laplacian (-∆_p)^su with s ∈ (0, 1) is the nonlinear nonlocal operator defined on smooth functions by $\displaystyle(-{\Delta}_p)^su(x)=2{\lim_{{\epsilon}{\searrow}0}}\int{_{{\mathbb{R}}^N{\backslash}{B_{\epsilon}}}}\;\frac{{\mid}u(x)-u(y){\mid}^{p-2}(u(x)-u(y))}{{\mid}x-y{\mid}^{N+ps}}dy$, x ∈ ℝ^N. The main goal of this work is to show how the usual variational methods and some analysis techniques can be extended to deal with nonlocal problems involving Sobolev and Hardy nonlinearities. We also prove that for some α ∈ (0, 1), the weak solution to the problem (P) is in C^1,α(${\bar{\Omega}}$).

• Korean Journal of Materials Research
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• v.18 no.8
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• pp.450-453
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• 2008

Mg-doped and In-Mg co-doped p-type GaN epilayers were grown in a low-pressure metal organic chemical vapor deposition technique. The effect of In doping on the p-GaN layer was studied through photoluminescence (PL), persistent photoconductivity (PPC), and transmission electron microscopy (TEM) at room temperature. For the In-doped p-GaN layer, the PL intensity increases significantly and the peak position shifts to 3.2 eV from 2.95 eV of conventional p-GaN. Additionally, In doping greatly reduces the PPC, which was very strong in conventional p-GaN. A reduction in the dislocation density is also evidenced upon In doping in p-GaN according to TEM images. The improved optical properties of the In-doped p-GaN layer are attributed to the high crystalline quality and to the active participation of incorporated Mg atoms.

• Bulletin of the Korean Mathematical Society
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• v.50 no.1
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• pp.11-24
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• 2013

Let m and n be fixed positive integers and M a right R-module. Recall that M is said to be ($m$, $n$)-injective if $Ext^1$(P, M) = 0 for any ($m$, $n$)-presented right R-module P; M is said to be ($m$, $n$)-flat if $Tor_1$(N, P) = 0 for any ($m$, $n$)-presented left R-module P. In terms of some derived functors, relative injective or relative flat resolutions and dimensions are investigated. As applications, some new characterizations of von Neumann regular rings and p.p. rings are given.