• Journal of Surface Science and Engineering
• /
• v.27 no.4
• /
• pp.193-206
• /
• 1994

A wear behavior of electroless (Ni-P-X, X: SiC, $Al_2O_3$, Diamond) composite coating layers, formed under various conditions on commerical grade low carbon steel, has been investigated using Taber abrasion tester and scanning electron microscope. Several factors, which are type of particles, co-deposited content, particle size, distribution of particles and heat-treatment, influenced the wear resistance. The wear resistance of the composited coating layers after heat-treatment at $400^{\circ}C$ for 1 hr was increased 70 times with diamond, 15 times with SiC and 8 times with $Al_2O_3$, compared with the electroless nickel plating layer without heat-treatment.

• Journal of the Mineralogical Society of Korea
• /
• v.5 no.2
• /
• pp.61-71
• /
• 1992

Through the low-temperature(60-150${\circ}C$) hydrothermal treatment of perlite with the alkaline solution at various NaOH concentrations, the mode of volcanic glass alteration and resultant zeolite formation were investigated in a closed system. At a temperature of 80${\circ}C$ and alkalinities of pH range 8 to 12, corresponding to the natural environments of diagenetic zeolite formation, only weak dissolution of perlitic glass occurs without zeolite formation despite the residence time of 100 days. Activities of Si and Al increase progressively, as a consequence of increasing pH, whereas activity ratios of Si/Al decrease. Zeolites were synthesized from perlite in the alkaline solution at above 0.1M NaOH concentrations. Below the temperature of 100${\circ}C$ Na-P was mainly formed, whereas analcime was the dominant zeolite at the temperature range of 100-150${\circ}C$. During Na-P synthesis chabazite and Na-X were also formed as by-products in case of lower proportion of solution/sample(<10ml/g) and higher NaOH concentraion (>3M), respectively. The alteration modes of perlite in the zeolite synthesis reflect that the formation of synthetic zeolites occurs as an incongruent dissolution likely with the diagenetic formation of natural zeolites from volcanic glass. Considering much difference in reaction kinetics between natural and synthetic systems, however, the evaluated synthetic conditions in these experiments were not directly applicable to the natural diagenetic system.

• Journal of IKEEE
• /
• v.26 no.4
• /
• pp.728-735
• /
• 2022

In this work, we investigated a high-voltage (~4.5 kV) 4H-SiC power DMOSFET with modifications of current spreading layer (CSL), which was introduced below the p-well region for low on-resistance. These include the following: 1) a thickness of CSL (T_CSL) from 0 um to 0.9 um; 2) a doping concentration of CSL (N_CSL) from 1×10¹⁶ cm^-3 to 5×10¹⁶ cm^-3. The design is optimized using TCAD 2D-simulation, and we found that CSL helps to reduce specific on-resistance but also breakdown voltage. The resulting structures exhibit a specific on-resistance (R_on,sp) of 59.61 mΩ·cm², a breakdown voltage (V_B) of 5 kV, and a Baliga's Figure of Merit (BFOM) of 0.43 GW/cm².

• Korean Journal of Soil Science and Fertilizer
• /
• v.49 no.2
• /
• pp.132-137
• /
• 2016

Field monitoring was performed to evaluate the chemical properties of 260 paddy soils every 4 years from 1999 to 2015 in Gyeongnam province. Soil chemical properties, including soil pH, electrical conductivity, amount of organic matter (OM), available phosphate ($P_2O_5$), exchangeable potassium (K), calcium (Ca), magnesium (Mg) and sodium (Na), and available silicate ($SiO_2$) were analyzed. In 2015, the average values of pH, OM, available $P_2O_5$, exchangeable K, Ca, and Mg, and available $SiO_2$ was 5.8, $30g\;kg^{-1}$, $222mg\;kg^{-1}$, $0.37cmol_c\;kg^{-1}$, $6.5cmol_c\;kg^{-1}$, and $1.4cmol_c\;kg^{-1}$, $252mg\;kg^{-1}$, respectively. The frequency distribution within optimum range of paddy soils was 49.2%, 20.8%, 18.5%, and 5.8% for soil pH, OM, available $P_2O_5$, and available $SiO_2$, respectively. The available $P_2O_5$ concentrations in 2015 was excess level with portion of 58% and did not alter significantly during the experimental period. Although the average of available $SiO_2$ concentration has tended to increase with every year, the insufficient proportion of available $SiO_2$ concentration in 2015 was 48%. These results indicated that a balanced management of soil chemical properties can properly control the amount of fertilizer applied for sustainable agriculture in paddy field.

• Transactions on Electrical and Electronic Materials
• /
• v.9 no.1
• /
• pp.28-32
• /
• 2008

Hydrogenated microcrystalline silicon(${\mu}c$-Si:H) films were prepared using inductively coupled plasma chemical vapor deposition(ICP-CVD) method, electrical and optical properties of these films were studied as a function of silane concentration. And then, effect of $PH_3\;and\;B_2H_6$ addition on their electrical properties was also investigated for solar cell application. Characterization of these films from X-ray diffraction revealed that the conductive film exists in microcrystalline phase embedded in an amorphous network. At $PH_3/SiH_4$ gas ratio of $0.9{\times}10^{-3}$, dark conductivity has a maximum value of ${\sim}18.5S/cm$ and optical bandgap also a maximum value of ${\sim}2.39eV$. Boron-doped ${\mu}c$-Si:H films, satisfied with p-layer of solar cell, could be obtained at ${\sim}10^{-2}\;of\;B_2H_6/SiH_4$.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
• /
• 2003.07a
• /
• pp.396-399
• /
• 2003

4H-SiC un diodes with field limiting rings(FLRs) were fabricated and characterized. The dependences of reverse breakdown voltage on the number of FLRs, the distance between p-base main junction and first FLR, and activation temperatures, were investigated. Al and B ions were implanted and activated at high temperature to form p-base region and p+ region in the n-epilayer. We have obtained up to 1782V of reverse breakdown voltage in the un diode with two FLRs on loom thick epilayer. The differential on-resistances of the fabricated diode are $5.3m{\Omega}cm^2$ at $100A/cm^2$ and $2.7m{\Omega}cm^2$ at $1kA/cm^2$, respectively. All pn diodes with FLRs have higher avalanche breakdown voltages than that of diode without an FLR. Regardless of the activation temperature, the un diode with a FLR located 5um apart from main junction has the highest mean breakdown voltage around 1600V among the diodes with one ring. On the other hand, the pn diode with two rings showed different behavior with activation temperature. It reveals that high voltage SiC pn diodes with low on-resistance can be fabricated by using the FLR edge termination.

• Journal of the Mineralogical Society of Korea
• /
• v.20 no.3
• /
• pp.147-153
• /
• 2007

Kaolinite [$Al_2Si_2O_5(OH)_4$] was successfully synthesized by a hydrothermal process from amorphous $Al(OH)_3$ and $SiO_2$ at $230^{\circ}C$ under the pressure of $30 kg/cm^2$. The experiments were performed varying temperatures ($180{\sim}280^{\circ}C$), pressure ($10{\sim}60kg/cm^2$), chemistry ($Al_2O_3/SiO_2 = 0.5{\sim}0.38$) and pH ($0.3{\sim}9.5$) of the solution. The autoclaving was carried out in a closed stainless steel vessel. Kaolinite appears from the starting composition of $Al_2O_3/SiO_2= 0.5$ with boehmite and was stable as a single phase with the composition of $Al_2O_3/SiO_2=0.45$. Boehmite was a stable phase below $200^{\circ}C$ for the 240 h period of autoclaving, but kaolinite appeared even in 20 h at $230^{\circ}C$. The single kaolinite phase of a good crystallinity was observed at pH ranging 2 to 6. That indicates that pH is one of the most critical parameters for the successful formation of kaolinite. The optimal molar ratio of $Al_2O_3$ to $SiO_2$ was determined to be 0.45. The XRD pattern of the synthesized kaolinite coincided with that of natural one and its morphology was the cluster type of the kaolinite crystals (diameter = ${\sim}3{\mu}m$), irrespective of starting material, composition and temperature.

• Proceedings of the Korean Institute of Surface Engineering Conference
• /
• 2016.11a
• /
• pp.181-181
• /
• 2016

Hydrogenated microcrystalline silicon (${\mu}c-Si:H$) films have attracted much attention as materials of the bottom-cells in Si thin film tandem photovoltaics due to their low bandgap and excellent stability against light soaking. However, in PECVD, the source gas $SiH_4$ must be highly diluted by $H_2$, which eventually results in low deposition rate. Moreover, it is known that high-rate ${\mu}c-Si:H$ growth is usually accompanied by a large number of dangling-bond (DB) defects in the resulting films, which act as recombination centers for photoexcited carriers, leading to a deterioration in the device performance. During film deposition, Si nanoparticles generated in $SiH_4$ discharges can be incorporated into films, and such incorporation may have effects on film properties depending on the size, structure, and volume fraction of nanoparticles incorporated into films. Here we report experimental results on the effects of nonoparticles incorporation at the different substrate temperature studied using a multi-hollow discharge plasma CVD method in which such incorporation can be significantly suppressed in upstream region by setting the gas flow velocity high enough to drive nanoparticles toward the downstream region. All experiments were performed with the multi-hollow discharge plasma CVD reactor at RT, 100, and $250^{\circ}C$, respectively. The gas flow rate ratio of $SiH_4$ to $H_2$ was 0.997. The total gas pressure P was kept at 2 Torr. The discharge frequency and power were 60 MHz, 180 W, respectively. Crystallinity Xc of resulting films was evaluated using Raman spectra. The defect densities of the films were measured with electron spin resonance (ESR). The defect density of fims deposited in the downstream region (with nonoparticles) is higher defect density than that in the upstream region (without nanoparticles) at low substrate temperature of RT and $100^{\circ}C$. This result indicates that nanoparticle incorporation can change considerably their film properties depending on the substrate temperature.

• Journal of the Korean Ceramic Society
• /
• v.40 no.10
• /
• pp.991-997
• /
• 2003

The effect of A1$_4$C$_3$ additive on the thermoelectric properties of SiC ceramics were studied. Porous SiC ceramics with 47∼59% relative density were fabricated by sintering the pressed $\alpha$-SiC powder compacts with A1$_4$C$_3$at 2100∼220$0^{\circ}C$ for 3 h in Ar atmosphere. Crystalline phases of the sintered bodies were identified by powder X-Ray Diffraction (XRD) and their microstructures were observed with a Scanning Electron Microscope (SEM). In the case of A1$_4$C$_3$ addition, the phase transformation of 6H-SiC to 4H-SiC could be observed during sintering. The Seebeck coefficient and electrical conductivity were measured at 550∼95$0^{\circ}C$ in Ar atmosphere. In the case of undoped specimens, the Seebeck coefficients were positive (p-type semiconducting) possibly due to a dominant effect of the acceptor impurities (Al, Fe) contained in the starting powder and electrical conductivity increased as increasing sintering temperature. Electrical conductivity of A1$_4$C$_3$doped specimen is larger than that of undoped specimen under the same condition, which might be due to the reverse phase transformation and increasing of carrier density. And the Seebeck coefficient of A1$_4$C$_3$ doped specimen is also larger than that of undoped specimen. The density of specimen, the amount of addition and sintering atmosphere had significant effects on the thermoelectric property.

• 한국신재생에너지학회:학술대회논문집
• /
• 2010.11a
• /
• pp.39.1-39.1
• /
• 2010

이종접합태양전지는 단결정 실리콘 기판 표면에 고품질 비정질 실리콘층을 적층함으로써 전기의 근원인 전하의 재결합 손실을 줄여 높은 개방전압을 얻을 수 있다는 특징이 있다. 초박형 태양전지는 기존 태양전지보다 뛰어난 광전변환 특성(Photovoltaic characteristic)을 가지고 두께가 얇아 제품 형상 시 자유도가 높아진다. 본 논문에서는 n-type Bare wafer($160{\sim}180{\mu}m$)를 이용하여 $50{\mu}m$의 웨이퍼를 제작하였다. a-Si:H(p)_a-Si:H(i)_c-Si(n)의 광흡수층 구조를 성막하여 cell을 제작하였다. 그 결과 Voc(Open Circuit Voltage)가 0.666, Jsc(Short-Circuit Current)가 34.77, FF(Fill Factor) 69.413, Efficency 16.07%를 달성했다.