• 한국환경과학회지
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• 제27권12호
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• pp.1205-1214
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• 2018

During the past few decades, significant increase in the consumption of coffee has led to rapid increase in the production of coffee waste in South Korea. Spent coffee waste is often treated as a general waste and is directly disposed without the necessary treatment. Spent Coffee Grounds (SCGs) can release several organic contaminants, including caffeine. In this study, leaching tests were conducted for SCGs and oxidative degradation of caffeine were also conducted. The tested SCGs contained approximately 4.4 mg caffeine per gram of coffee waste. Results from the leaching tests show that approximately 90% of the caffeine can be extracted at each step during sequential extraction. Advanced oxidation methods for the degradation of caffeine, such as $UV/H_2O_2$, photo-Fenton reaction, and $UV/O_3$, were tested. UV radiation has a limited effect on the degradation of caffeine. In particular, UV-A and UV-B radiations present in sunlight cause marginal degradation, thereby indicating that natural degradation of caffeine is minimal. However, $O_3$ can cause rapid degradation of caffeine, and the values of pseudo-first order rate constants were found to be ranging from $0.817min^{-1}$ to $1.506min^{-1}$ when the ozone generation rate was $37.1g/m^3$. Additionally, the degradation rate of caffeine is dependent on the wavelength of irradiation.

• 한국환경과학회지
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• 제22권12호
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• pp.1561-1569
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• 2013

This study carried out a laboratory scale plasma reactor about the characteristics of chemically oxidative species (${\cdot}OH$, $H_2O_2$ and $O_3$) produced in dielectric barrier discharge plasma. It was studied the influence of various parameters such as gas type, $1^{st}$ voltage, oxygen flow rate, electric conductivity and pH of solution for the generation of the oxidant. $H_2O_2$ and $O_3$.) $H_2O_2$ and $O_3$ was measured by direct assay using absorption spectrophotometry. OH radical was measured indirectly by measuring the degradation of the RNO (N-Dimethyl-4-nitrosoaniline, indicator of the generation of OH radical). The experimental results showed that the effect of influent gases on RNO degradation was ranked in the following order: oxygen > air >> argon. The optimum $1^{st}$ voltage for RNO degradation were 90 V. As the increased of $1^{st}$ voltage, generated $H_2O_2$ and $O_3$ concentration were increased. The intensity of the UV light emitted from oxygen-plasma discharge was lower than that of the sun light. The generated hydrogen peroxide concentration and ozone concentration was not high. Therefore it is suggested that the main mechanism of oxidation of the oxygen-plasma process is OH radical. The conductivity of the solution did not affected the generation of oxidative species. The higher pH, the lower $H_2O_2$ and $O_3$ generation were observed. However, RNO degradation was not varied with the change of the solution pH.

• 한국안전학회지
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• 제9권4호
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• pp.132-136
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• 1994

The new spray system is proposed by using a pipe with hygroscopic needle electrode In order to develop an air-cleaning ESP with high collection efficiency for submicron particles and high removal efficiency for NOx, SO$_2$, NH$_3$. Fundamental characteristics of charging water spray, which is not an usual wet type, are investigated experimentally. As a result, corona discharging mode and ozone generation rate are significantly affected by the operational conditions, such as the applied voltage and wet condition of the needle electrode.

• 한국진공학회:학술대회논문집
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• 한국진공학회 2012년도 제42회 동계 정기 학술대회 초록집
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• pp.434-435
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• 2012

Plasma enhanced chemical vapor deposition (PECVD) silicon dioxide thin films have many applications in semiconductor manufacturing such as inter-level dielectric and gate dielectric metal oxide semiconductor field effect transistors (MOSFETs). Fundamental chemical reaction for the formation of SiO2 includes SiH4 and O2, but mixture of SiH4 and N2O is preferable because of lower hydrogen concentration in the deposited film [1]. It is also known that binding energy of N-N is higher than that of N-O, so the particle generation by molecular reaction can be reduced by reducing reactive nitrogen during the deposition process. However, nitrous oxide (N2O) gives rise to nitric oxide (NO) on reaction with oxygen atoms, which in turn reacts with ozone. NO became a greenhouse gas which is naturally occurred regulating of stratospheric ozone. In fact, it takes global warming effect about 300 times higher than carbon dioxide (CO2). Industries regard that N2O is inevitable for their device fabrication; however, it is worthwhile to develop a marginable nitrous oxide free process for university lab classes considering educational and environmental purpose. In this paper, we developed environmental friendly and material cost efficient SiO2 deposition process by substituting N2O with O2 targeting university hands-on laboratory course. Experiment was performed by two level statistical design of experiment (DOE) with three process parameters including RF power, susceptor temperature, and oxygen gas flow. Responses of interests to optimize the process were deposition rate, film uniformity, surface roughness, and electrical dielectric property. We observed some power like particle formation on wafer in some experiment, and we postulate that the thermal and electrical energy to dissociate gas molecule was relatively lower than other runs. However, we were able to find a marginable process region with less than 3% uniformity requirement in our process optimization goal. Surface roughness measured by atomic force microscopy (AFM) presented some evidence of the agglomeration of silane related particles, and the result was still satisfactory for the purpose of this research. This newly developed SiO2 deposition process is currently under verification with repeated experimental run on 4 inches wafer, and it will be adopted to Semiconductor Material and Process course offered in the Department of Electronic Engineering at Myongji University from spring semester in 2012.

• 대한전기학회논문지:전기물성ㆍ응용부문C
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• 제48권3호
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• pp.215-220
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• 1999

$SO_2$and CO gas removal characteristics of a wire-to-cylinder type nonthermal discharge plasma reactor in various applied voltage (-dc, ac, fast rising pulse and high frequency pulse) and a crossed dc magnetic field have been investigated. The experiment has been emphasized on the oxidizing characteristics of $SO_2$ and CO gas by $O_3$ and the applying of a crossed magnetic field, which would induce the cyclotronic and drift motions of electrons making the residual time longer in the removal airgap space. And it also would enhance the energy of electrons and the electrophysicochemical actions to remove the pollutant gases effectively. It is found thatthe corona onset voltage and the breakdown voltage were decreased with increasing the crossed magnetic field and decrease initial fed $SO_2$and CO concentration. As a result, a higher ozone generation and $SO_2$ and CO gas removal rate of 20[%] can be obtained with -dc, ac and fast rising pulse corona discharges in the crossed dc current-induced magnetic field. But high frequency pulse didn't show effect in applying of a crossed magnetic field.

• Korean Chemical Engineering Research
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• 제40권6호
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• pp.746-751
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• 2002

석탄 연소기술에서 타 연소로에 비해서 유동층 연소는 황산화물과 질소산화물 배출을 줄이는 기술이다. 석회석의 소성으로 생성되는 CaO에 의한 황산화물의 제거와 저온 연소와 공기 다단계 주입에 의한 NOx를 줄일 수 있다는 것이 유동층 연소로의 큰 장점이지만, 상대적으로 $N_2O$의 배출은 매우 높다. $N_2O$는 지구온난화 가스일 뿐만 아니라 성층권내의 오존층을 파괴하는 물질이기도 하다. CaO는 $N_2O$ 분해를 위한 촉매 물질로 알려져 있다. 본 연구는 CaO를 충진시킨 고정층 반응기에서 CaO에 의한 $N_2O$의 분해특성에 관하여 수행하였으며, 유동층 연소온도와 가스조성에서 온도변화에 대한 $N_2O$의 분해특성, CaO 충진량의 변화와 $CO_2$, NO, $O_2$ 농도변화에 따른 $N_2O$ 분해특성에 관하여 수행하였다. 또한 실험 결과로부터 CaO표면에서 $N_2O$분해반응에 대한 반응속도식을 나타낼 수 있었다. 결과로서 온도가 증가함에 따라 $N_2O$ 분해반응이 증가하였으며, $CO_2$의 농도를 변화시킬 경우 $CO_2$ 농도가 증가할수록 $N_2O$ 분해반응이 감소하였다. NO 존재시와 비교하였을 때 $N_2O$의 분해반응이 감소함을 알 수 있었다. 반응속도론적으로 해석한 결과 $CO_2$ 농도에 대한 $N_2O$ 분해반응의 반응속도식을 다음과 같이 나타내었다. 본 연구 결과 CaO는 $N_2O$분해 반응에서 좋은 촉매 기능을 지니고 있음을 알 수 있었다. $\frac{d[N_2O]}{dt}=\frac{3.86{\times}10^9{\exp}(-15841/R)K_{N_2O}[N_2O]}{(1+K_{N_2O}[N_2O]+K_{CO_2}[CO_2])}$