• 한국세라믹학회지
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• 제18권1호
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• pp.23-26
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• 1981

The electrical conductivity of highly pure polycrystalline $Yb_2O_3$ has been measured from 650 to 105$0^{\circ}C$ under oxygen pressure range of $10^{-5}$ to 102 torr. The conductivity dependence of oxygen pressure in the temperature region from 750 to 105$0^{\circ}C$ is approximated by $\sigma$ $\alpha$ $Po_2^{1/5.3}$. This shows that the conduction mechanism is associated with doubly ionized metal vacancies. Fairly low activation energy and the lack of oxygen pressure dependence are found over the temperature range of 650 to 75$0^{\circ}C$. The conduction mechanism can be explaned by not metal vacancies, but hopping oxygen ions in the oxide.

• 한국정보디스플레이학회:학술대회논문집
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• 한국정보디스플레이학회 2005년도 International Meeting on Information Displayvol.II
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• pp.1288-1290
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• 2005

We report on the structural and electrical properties of amorphous Yttria-stabilized zirconia (YSZ) thin films which are the potential high-k gate dielectric material of organic thin film transistor (OTFT). To investigate the influence of the oxygen flow rate on the structural and electrical properties of the YSZ films, XRD, XPS, J-E, I-V were carried out in this work. Oxygen vacancies are expected to be the most predominant type of defect in metal-oxide dielectrics. The leakage current density decreased mainly because of the reduction of oxygen vacancies with increasing oxygen flow rate.

• 한국재료학회:학술대회논문집
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• 한국재료학회 2007년도 추계학술발표대회 및
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• pp.25.1-25.1
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• 2007

• 전자공학회논문지D
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• 제36D권4호
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• pp.63-69
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• 1999

본 연구에서는 급속 열처리 온도와 분위기를 변화 시키면서 Pt/BST/Pt 커패시터의 전기적 특성 변화를 알아보고, 특성 개선에 대한 체계적인 원인을 분석하였다. 급속 열처리의 온도와 분위기에 따른 Pt/BST/Pt 커패시터의 전기적 특성 변화는 BST 박막 내의 산소 결핍과 관련이 있는 것으로 보인다. 이러한 사실을 확인하기 위하여 450℃, 20mttorr에서 산소와 산소 플라즈마 분위기에서 각각 열처리를 수행한 후 전기적 특성을 비교하였다. 산소 플라즈마에서 열처리를 수행한 BST 커패시터의 누설전류 전류밀도가 단순히 산소 분위기에서 열처리 한 시편과 비교하여 훨씬 낮았다. 또한, 산소 분위기에서 열처리를 수행한 BST 커패시터의 유전율이 약14%정도 감소한 반면, 산소 플라즈마에서 열처리를 수행한 유전율은 거의 감소가 없었다. 위의 결과는 반응성이 강한 산소 원자를 많이 포함하고 있는 산소 플라즈마가 산소 결핍을 보상하는데 있어서 매우 효과적임을 시사하고 있다. 결과적으로, BST박막 내의 산소 결핍이 BST커패시터의 누설전류 밀도와 유전율에 큰 영향을 미치고 있음을 추정할 수 있다. 그리고, 산소 플라즈마에서 열처리를 수행함으로써 유전율의 감소 없이 누설전류 밀도가 크게 개선된 BST커패시터를 얻을 수 있었다.

• The Korean Journal of Ceramics
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• 제4권2호
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• pp.128-135
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• 1998

The paper gives a brief introduction to protonic defects and their chemistry, thermodynamics and transport in oxides. The temperature dependence of the equilibrium concentration of protons is illustrated and compared for different acceptor-doped oxides. The difficulties of saturating as well as emptying the oxides of protons are discussed. In order to illustrate the possibility of lattice relaxation of defects, a conceptual study is made of a case where the enthalpy of dissolution of protons(water) at the cost of oxygen vacancies is assumed dependent on the concentration of vacancies. It is shown how this changes the behavior of hydration curves vs temperature and water vapour pressure. finally, a discussion is given on the water uptake in heavily oxygen deficient oxides; how water uptake may affect order-disorder in the oxygen sublattice and eventually lead to defective, disordered or ordered oxyhydroxides or hydroxides of potential interest as intermediate temperature proton conductions.

• 한국세라믹학회지
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• 제40권9호
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• pp.827-831
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• 2003

In proton-conducting perovskites, oxygen ions and protons make a diffusion pair for a chemical diffusion and thus lead to the transport of $H_2O$ under its chemical potential gradient. The present manuscript develops relationships between the chemical diffusion coefficient of $H_2O$ and the diffusion coefficients of protons and oxygen vacancies with an emphasis on the thermodynamic behavior of the oxygen vacancies. Depending on the degree of hydration X, two different expressions of the chemical diffusion coefficient were obtained : equation omitted and equation omitted.

• Journal of the Korean Physical Society
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• 제73권10호
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• pp.1566-1570
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• 2018

We investigated the visible emission property of $SrTiO_3$ (STO) single crystals irradiated with gammy-ray (${\gamma}$-ray) at various total doses up to 900 kGy. The electric and optical absorption properties of the irradiated STO samples were hardly changed with the ${\gamma}$-ray irradiation, compared with those of un-irradiated STO. In contrast, the visible emission near 550 nm increased with the ${\gamma}$-ray dose increasing. While the development of the visible emission was indicative of the increase of oxygen vacancies inside STO by the ${\gamma}$-ray irradiation, the newly generated oxygen vacancies were not significantly harmful to the electric and optical properties of STO. We concluded that the STO single crystal should have a good tolerance against the damage by the ${\gamma}$-ray irradiation.

• 한국세라믹학회지
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• 제38권12호
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• pp.1093-1096
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• 2001

ZnO내 $Al_2$ $O_3$의 고용은 $Al^{3+}$ 의 ZnO 결정의 $Zn^{2+}$자리, 즉 wurtizite 구조에서 4개의 산소가 만드는 4면체 공간자리로서 치환반응으로 정의될 수 있다. 이 반응은 아연-빈자리 혹은 산소-빈자리와 연관되어 일어나므로 ZnO의 비화학량론성 및 결정결함반응들과 상관관계를 가진다. 이러한 상호연관성은 아연-빈자리 및 산소분압(P $o_2$) 의존성을 낳으며, 결과적으로 ZnO내 Al 용해도([Al/sug zn/]$_{max}$)의 산소분압 의존성을 야기한다. 본 논문은 ZnO내에 Al의 용해도는 산소분압이 증가하면 감소한다는 것을 처음으로 곗나하여 보고한다. [A $l_{zn}$ ]$_{max}$ $P_{o2}$$^{-1}$4/./.

• 한국재료학회지
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• 제18권12호
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• pp.673-677
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• 2008

Calcia (CaO) stabilized cubic-$HfO_2$ is studied by density functional theory (DFT) with generalized gradient approximation (GGA). When a Ca atom is substituted for a Hf atom, an oxygen vacancy is produced to satisfy the charge neutrality. The lattice parameter of a $2{\times}2{\times}2$ cubic $HfO_2$ supercell then increases by $0.02\;{\AA}$. The oxygen atoms closest to the oxygen vacancy are attracted to the vacancy as the vacancy is positive compared to the oxygen ion. When the oxygen vacancy is located at the site closest to the Ca atom, the total energy of $HfO_2$ reaches its minimum. The energy barriers for the migration of the oxygen vacancy were calculated. The energy barriers between the first and the second nearest sites, the second and the third nearest sites, and the third and fourth nearest sites are 0.2, 0.5, and 0.24 eV, respectively. The oxygen vacancies at the third and fourth nearest sites relative to the Ca atom represent the oxygen vacancies in undoped $HfO_2$. Therefore, the energy barrier for oxygen migration in the $HfO_2$ gate dielectric is 0.24 eV, which can explain the origin of gate dielectric leakage.

• 한국전기전자재료학회논문지
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• 제30권8호
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• pp.484-490
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• 2017

We investigated the rewritable operation of a non-volatile memory device composed of Al (top)/$TiO_2$/indium-zinc-oxide (IZO)/Al (bottom). The oxygen-deficient IZO layer of the device was spin-coated with 0.1 M indium nitrate hydrate and 0.1 M zinc acetate dehydrate as precursor solutions, and the $TiO_2$ layer was fabricated by atomic layer deposition. The oxygen vacancies IZO layer of an active component annealed at $400^{\circ}C$ using thermal annealing and it was proven to be in oxygen vacancies and oxygen binding environments with OH species and heavy metal ions investigated by X-ray photoelectron spectroscopy. The device, which operates at low voltages (less than 3.5 V), exhibits non-volatile memory behavior consistent with resistive-switching properties and an ON/OFF ratio of approximately $3.6{\times}10^3$ at 2.5 V.