• 한국진공학회:학술대회논문집
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• 한국진공학회 2015년도 제49회 하계 정기학술대회 초록집
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• pp.196.2-196.2
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• 2015

There are various issues fabricating the successful and efficient solar cell structures. One of the most important issues is band alignment technique. The solar cells make the carrier in their active region over the p-n junction. Then, electrons and holes diffuse by minority carrier diffusion length. After they reach the edge of solar cells, there exist large energy barrier unless the good electrode are chosen. Many various conductor with different work functions can be selected to solve this energy barrier problem to efficiently extract carriers. Tungsten oxide has large band gap known as approximately 3.4 eV, and usually this material shows n-type property with reported work function of 6.65 eV. They are extremely high work function and trap level by oxygen vacancy cause them to become the hole extraction layer for optical devices like solar cells. In this study, we deposited tungsten oxide thin films by sputtering technique with various sputtering conditions. Their electrical contact properties were characterized with transmission line model pattern. The structure of tungsten oxide thin films were measured by x-ray diffraction. With x-ray photoelectron spectroscopy, the content of oxygen was investigated, and their defect states were examined by spectroscopic ellipsometry, UV-Vis spectrophotometer, and photoluminescence measurements.

• 한국진공학회:학술대회논문집
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• 한국진공학회 2015년도 제49회 하계 정기학술대회 초록집
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• pp.157-157
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• 2015

Recently, the growing interest in organic microelectronic devices including OLEDs has led to an increasing amount of research into their many potential applications in the area of flexible electronic devices based on plastic substrates. However, these organic devices require a gas barrier coating to prevent the permeation of water and oxygen because organic materials are highly susceptible to water and oxygen. In particular, high efficiency OLEDs require an extremely low water vapor transition rate (WVTR) of $1{\times}10^{-6}g/m^2day$. The Key factor in high quality inorganic gas barrier formation for achieving the very low WVTR required ($1{\times}10^{-6}g/m^2day$) is the suppression of defect sites and gas diffusion pathways between grain boundaries. In this study NBAS process was introduced to deposit enhanced film density single gas barrier layer with a low WVTR. Fig. 1. shows a schematic illustration of the NBAS apparatus. The NBAS process was used for the $Al_2O_3$ nano-crystal structure films deposition, as shown in Fig. 1. The NBAS system is based on the conventional RF magnetron sputtering and it has the electron cyclotron resonance (ECR) plasma source and metal reflector. $Ar^+$ ion in the ECR plasma can be accelerated into the plasma sheath between the plasma and metal reflector, which are then neutralized mainly by Auger neutralization. The neutral beam energy is controlled by the metal reflector bias. The controllable neutral beam energy can continuously change crystalline structures from an amorphous phase to nanocrystal phase of various grain sizes. The $Al_2O_3$ films can be high film density by controllable Auger neutral beam energy. we developed $Al_2O_3$ high dense barrier layer using NBAS process. We can verified that NBAS process effect can lead to formation of high density nano-crystal structure barrier layer. As a result, Fig. 2. shows that the NBAS processed $Al_2O_3$ high dense barrier layer shows excellent WVTR property as a under $2{\times}10^{-5}g/m^2day$ in the single barrier layer of 100nm thickness. Therefore, the NBAS processed $Al_2O_3$ high dense barrier layer is very suitable in the high efficiency OLED application.

• 한국표면공학회지
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• 제38권1호
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• pp.28-36
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• 2005

In this study, the reflow characteristics of copper thin films which is expected to be used as interconnection materials in the next generation semiconductor devices were investigated. Cu thin films were deposited on the TaN diffusion barrier by metal organic chemical vapor deposition (MOCVD) and annealed at the temperature between 250℃ and 550℃ in various ambient gases. When the Cu thin films were annealed in the hydrogen ambience compared with oxygen ambience, sheet resistance of Cu thin films decreased and the breakdown of TaN diffusion barrier was not occurred and a stable Cu/TaN/Si structure was formed at the annealing temperature of 450℃. In addition, reflow properties of Cu thin films could be enhanced in H₂ ambient. With Cu reflow process, we could fill the trench patterns of 0.16～0.24 11m with aspect ratio of 4.17～6.25 at the annealing temperature of 450℃ in hydrogen ambience. It is expected that Cu reflow process will be applied to fill the deep pattern with ultra fine structure in metallization.

• 한국전기전자재료학회논문지
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• 제17권2호
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• pp.150-155
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• 2004

This study attempts to form a TiN barrier layer against Cu diffusion by the easier and more convenient method. In this new approach, Ti was sputter-deposited, and nitrided by heat-treating in the NH$_3$ambient. Sheet resistance of as-deposited Ti was 20 Ω/$\square$, but increased to 195 Ω/$\square$ after the heat-treatment at 30$0^{\circ}C$, and lowered to 120 Ω/$\square$ after the heat-treatment at 50$0^{\circ}C$, and $600^{\circ}C$. AES results for these thin films confirmed that the atomic ratio of Ti and N was close to 1:1 at or above 40$0^{\circ}C$ heat-treatment. However, it was also found that excessive oxygen was contained in the TiN layer. To examine the barrier property against Cu diffusion, 100nm Cu was deposited on the TiN layer and then annealed at 40$0^{\circ}C$ for 40 min.. Cu remained at the surface without diffusing into the Si layer.

• 폴리머
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• 제37권5호
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• pp.579-586
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• 2013

용액 삽입법을 이용하여 다양한 함량의 사포나이트(SPT) 점토를 포함한 폴리(비닐 알코올)(poly(vinyl alcohol), PVA) 나노 복합체 필름을 제조하였다. SPT를 0에서 10 wt%까지 첨가한 PVA 나노 복합체 필름들의 열적 특성, 모폴로지, 광학 투명성 및 기체 투과성에 대해 조사하였다. 특히 5 wt% SPT 포함한 PVA 복합체 필름이 매우 우수한 열적 특성과 기체 차단성을 나타내었다. 5 wt% SPT 포함된 복합체 필름을 연신율에 따라 150에서 250%까지 이축 연신하였고, 이축 연신율에 따른 점토 분산성, 광학적 특성 및 기체 투과성에 대한 조사를 하였다. 다양한 비로 이축 연신한 PVA 나노 복합체 필름은 우수한 광학 투명성과 산소 차단성을 보였다.

• Korean Chemical Engineering Research
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• 제51권3호
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• pp.382-387
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• 2013

압출 컴파운딩 공정 및 케스팅 필름 공정을 이용하여 생분해성 폴리우레탄(PU)/클레이 나노복합 필름을 제조하였다. PU 수지와의 강한 결합 형성을 위해 유기적으로 개질되어 그 표면에 많은 양의 히드록시기를 갖는 MMT 나노클레이(C30B)를 사용하였다. 압출 공정 중 발생된 높은 전단 응력에 의해 발현된 복합체 내 나노판상체의 삽입/박리 구조 및 분산 상태를 XRD 분석 및 TEM 관찰을 통해 확인하였다. 또한 제조된 나노복합체의 유변물성, 인장물성, 투명성, 산소투과도의 변화를 첨가된 나노클레이 함량에 따라 조사하였으며, 이로부터 나노복합체 내 나노판상체의 박리 및 분산 구조와 물성과의 상관 관계를 제시할 수 있었다. 일정수준의 함량으로 첨가된 나노클레이는 복합 필름의 인장 탄성율, 연신율, 투명성, 산소차단성 등의 성능 향상에 뚜렷하게 기여하였으나, 그 이상의 함량으로 첨가되면 불완전한 박리 및 불균질한 분산성으로 인하여 오히려 성능이 감소하거나 또는 그 증가 폭이 매우 작은 것으로 나타났다. PU/clay 나노복합 필름의 생분해성은 퇴비화 실험을 통한 분해시간에 따른 필름의 산소투과도 및 인장물성의 변화를 관찰함으로써 확인하였다.

• 접착 및 계면
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• 제23권3호
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• pp.94-99
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• 2022

졸-겔 공정 및 용액 블렌딩 공정을 이용하여 삼성분계(그래핀/실리카/EVOH) 나노 복합 코팅 물질을 제조하였다. SEM 관찰 및 XRD 분석을 통하여 제조된 산화 그래핀의 삽입/박리 구조뿐만 아니라 나노 복합 물질 내에서의 그래핀 나노 판상체와 실리카 입자의 박리 구조 및 분산 상태를 확인하였다. 삼성분계 나노 복합 물질로 코팅된 BOPP의 산소 차단성은 산화 그래핀 및 실리카 입자를 일정 수준의 함량으로 첨가했을 때 이성분계(실리카/EVOH) 나노 복합 코팅 필름에 비해 뚜렷하게 향상되었나, 그 이상의 함량으로 첨가하면 불완전한 박리 및 그래핀 적층체의 분산과 실리카 클러스터의 미세 크랙 발생으로 인하여 차단성이 거의 일정하거나 또는 그 증가 폭이 매우 작은 것으로 나타났다. 또한 나노 복합 코팅 필름의 투명성은 그래핀 함량에 따른 필름의 광투과율을 측정함으로써 확인하였으며, 이러한 결과로부터 식품 포장 필름으로의 적용 가능성을 제시할 수 있었다.

• 한국섬유공학회:학술대회논문집
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• 한국섬유공학회 2002년도 봄 학술발표회 논문집
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• pp.187-190
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• 2002

Poly(vinyl alcohol) (PVA) is a representative hydrophilic and water-soluble polymer and widely employed in various applications such as fibers for clothes and industries, films, membranes, medicines for drug delivery system, and cancer cell-killing embolic materials. Moreover, PVA fibers, gels, and films are potentially high-performance materials because they have high tensile and impact strengths, high tensile modulus, high abrasion resistance, excellent alkali resistance, and oxygen barrier property which are superior to those of any known polymers[1,2]. (omitted)

• Journal of Information Display
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• 제2권2호
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• pp.52-60
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• 2001

The electrical and mechanical properties in indium-tin-oxide films deposited on polymer substrate were examined. The materials of substrates were polyethersulfone (PES) which have gas barrier layer and anti-glare coating for plastic-based devices. The experiments were performed by rf-magnetron sputtering using a special instrument and buffer layers. Therefore, we obtained a very flat polymer substrate deposited ITO film and investigated the effects of buffer layers, and the instrument. Moreover, the influences of an oxygen partial pressure and post-deposition annealing in ITO films deposited on polymer substrates were clarified. X-ray diffraction observation, measurement of electrical property, and optical microscope observation were performed for the investigation of micro-structure and electro-mechanical properties, and they indicated that as-deposited ITO thin films are amorphous and become quasi-crystalline after adjusting oxygen partial pressure and thermal annealing above $180^{\circ}C$. As a result, we obtained 20-25 ${\Omega}/sq$ of ITO films with good transmittance (above 80 %) of oxygen contents with under 0.2 % and vacuum annealing. Furthermore, using organic buffer layer, we obtained ITO films which have a rather high electrical resistance (40-45 ${\Omega}/sq$) but have improved optical (more than 85 %) and mechanical characteristics compared to the counterparts. Consequently, a prototype reflective color plastic film LCD was fabricated using the PES polymer substrates to confirm whether the ITO films could be realized in accordance with our experimental results.

• 폴리머
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• 제37권2호
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• pp.249-253
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• 2013

Poly(lactic acid)(PLA)와 이산화탄소를 원료로 합성한 비결정성 수지인 poly(propylene carbonate)(PPC)를 공압출하여 PLA/PPC/PLA 적층으로 제조하고 일축 연신한 후 수축성 필름을 제조하였다. 이 필름의 기계적, 광학적, 배리어 특성들과 열수축성을 연구하였다. PLA/PPC/PLA 필름은 $75^{\circ}C$에서 최대 수축률이 60% 이상이었다. PPC 함량이 증가할수록 필름의 수축률이 증가하고, 수축속도는 빠르며, 연신온도가 높을수록 필름의 수축률이 감소하는 경향을 보였다. 또한 제조한 필름은 높은 산소 및 수분 배리어성을 나타내었다. 본 연구에서 제조한 PLA/PPC/PLA 필름은 환경 친화적인 수축성 필름으로의 실용화가 가능할 것으로 기대된다.