• Korean Journal of Materials Research
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• v.4 no.2
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• pp.143-151
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• 1994

On PT/Ti/Si substrates, PZT thln fllms are deposited at $300^{\circ}C$ by rf magnetron sputtering uslng a $(PbZr_{52}, Ti_{48})O_{3}$ composltc cerarnlc target. To abtaln, the stable phase, perovskltc structure, furnace annealmg techmque had been cmplo:~d In PbO amb~ent for the $550^{\circ}C$-$750^{\circ}C$ temperature ranges. On Pt(250$\AA$)/Ti(500$\AA$)/Si, Pt(1000)$\AA$/Ti(500$\AA$)/Si substrates, effects of Ti layer and Pt thickness are studled. Though thickness of the Pt layer 1s 1000$\AA$). oxygen diffusion is not prevented and accelerated by Ti layer actlng for oxygen sink sites durmg furnace annealing. The upper TI layer 1s transformed Into TIOX by oxyen dlffuslon and lower Ti layer Into silicide with in-diffused Pt. The formation of TiOx layer seems to affect the orlentatton of the PZT layer. Furnace annealed f~lm shows ferroelectr~c and electrical properties wth a remanent polarlzation of 3.3$\mu A /\textrm{cm}^2$, , coerclve fleld of 0.15MV/cm, a=571 (10kHz), leakage current 32.65$\mu A /\textrm{cm}^2$, , breakdown voltage of 0.4OMV/cm.

• Journal of Sensor Science and Technology
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• v.5 no.1
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• pp.30-36
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• 1996

ZnO thin-film sensors were fabricated by RF magnetron sputtering method. The composition of the device material was 4 wt. % $Al_{2}O_{3}$, 1 wt. % $TiO_{2}$ and 0.2 wt. % $V_{2}O_{5}$ on the basis of ZnO material for developing the high sensitive TMA gas sensor which have an appropriate resistivity and the stability for practical use. They were also grown on the $SiO_{2}/Si$ substrates heated at $250^{\circ}C$ under a pure oxygen pressure of about 10 mTorr with a power of about 80 watts for 10 minutes. So as to enhance the stability of the resistivity, the thin films were annealed from $400^{\circ}C$ to $800^{\circ}C$. The sensors made with the thin film which were annealed at $700^{\circ}C$ for 60 minutes in pure oxygen gas exhibited a good sensing properties for TMA gas. The thin film grown at this condition showed the maximum sensitivity of 550 in TMA gas concentration of 160 ppm, and exhibited a good stability and excellent linearity.

• Korean Journal of Materials Research
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• v.10 no.4
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• pp.290-294
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• 2000

ZnS:Mn TFEL devices were fabricated by electron-beam evaporation method and then the electro-optical properties were investigated. To investigate the capacitance which was due to oxygen vacancy at the $Ta_2O_5$ thin film, AES(Auger Electron Spectroscopy) and C-F(capacitance-frequency) measurements were used. It was found that the capacitance was decreased by annealing the $Ta_2O_5$ film in oxygen ambience. From EL emission measurement, we observed the EL emission spectrum which had the peak range from 550nm and 650nm. This emission is associated with the transition from $^4T_1(^4G)$ first excited state to $^6A_1(^6S)$ ground state in the $3d^5$ energy level configuration of $Mn^{2+}$ occurs. The threshold voltage of EL device with $Ta_2O_5$ insulator layer was found to be 24V~28V. The CIE color coordinates of these emission are X=0.5151, Y=0.4202 which is yellowish orange emitting. The EL device using $Ta_2O_5$ insulator layer can be driven with a low voltage which is beneficial to the practical application.

• Korean Journal of Optics and Photonics
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• v.14 no.3
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• pp.343-348
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• 2003

Indium tin oxide (ITO) thin films (170 nm) were grown by DC magnetron sputtering deposition on Coming glass substrates without a post annealing. The electrical transport and optical properties of the films have been investigated as a function of deposition temperature $T_{s}$ (10$0^{\circ}C$$\leq$ $T_{s}$$\leq$35$0^{\circ}C$) and oxygen partial pressure $P_{o_{2}}$, (0 $P_{o_{2}}$ $\leq$ 10$^{-5}$ torr). Films were deposited from a high density (99% of theoretical density) ITO target (I $n_2$ $O_3$: Sn $O_2$= 90 wt% : 10 wt%) made of ITO nano powders. With an increase of $T_{s}$ the electrical resistivity p of ITO thin films was found to decrease, but the mobility $\mu$$_{H}$ was found to increase. The carrier density nu shows the maximum value of 6.6$\times$10$^{20}$ /㎤ at $T_{s}$ = 30$0^{\circ}C$. At fixed Is, with an increase of the oxygen partial pressure, $n_{H}$ and $\mu$$_{H}$ were found to decrease, but p was found to increase. The minimum resistivity and maximum mobility values of the ITO films were found to be 0.3 mΩ.cm and 39.3 $\textrm{cm}^2$/V.s, respectively. The visible transmittance of the ITO films was above 80%.. 80%..

• Proceedings of the Korean Institute of Information and Commucation Sciences Conference
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• 2008.05a
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• pp.738-739
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• 2008

The SiOC film of carbon centered system was prepared using bistrimethylsilymethane and oxygen mixed precursor by the chemical vapor deposition. The chemical properties of he SiOC film were analyzed by the contact angle and FTIR spectra. The dielectric constant of the deposited films decreased after annealing process, and the correlation between the increasing the BTMSM/O2 flow rate ratio and he dielectric constant did not exist. However, the trend of increasing or decreasing of the dielectric constant repeated and here is the correlation ship between the dielectric constant and the Si-O-C bond in the range of $950{\sim}1200\;cm^{-1}$. The dielectric constant decreased between samples with the chemical shift. The lowest dielectric constant was 1.65 at the sample, which was observed he chemical shift.

• Journal of the Korean institute of surface engineering
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• v.34 no.5
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• pp.486-493
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• 2001

Partially stabilized zirconia (PSZ) is an attractive material for thermal barrier coating. Zirconia exists in three crystallographic phases: cubic, tetragonal and monoclinic. Especially, the phase transformation of tetragonal phase to monoclinic phase accompanies significant volume expansion, so this transition generally results in cracking and contributes to the failure of the TBC system. Both the plasma sprayed ZrO$_2$-8Y$_2$O$_3$ (YSZ) coat and the ZrO$_2$,-25CeO$_2$,-2.5Y$_2$O$_3$ (CYSZ) coat are isothermally heat -treated at 130$0^{\circ}C$ and 150$0^{\circ}C$ for 100hr and cooled at different cooling rates. The monoclinic phase is not discovered in all the CYSZ annealed at 130$0^{\circ}C$ and 150$0^{\circ}C$. In the 150$0^{\circ}C$ heat-treated specimens, the YSZ contains some monoclinic phase while none exists in the 130$0^{\circ}C$ heat-treated YSZ coat. For the YSZ, the different phase transformation behaviors at the two temperatures are due to the stabilizer concentration of high temperature phases and grain growth. For the YSZ with 150$0^{\circ}C$-100hr annealing, the amount of monoclinic phase increased with the slower cooling rate. The extra oxygen vacancy, thermal stress, and c to t'phase transformation might suppress the t to m martensitic phase transformation.

• Proceedings of the Korean Vacuum Society Conference
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• 2012.08a
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• pp.430-430
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• 2012

The surface recombination velocity of the silicon solar cell could be reduced by passivation with insulating layers such as $SiO_2$, SiNx, $Al_2O_3$, a-Si. Especially, the aluminium oxide has advantages over other materials at rear surface, because negative fixed charge via Al vacancy has an additional back surface field effect (BSF). It can increase the lifetime of the hole carrier in p-type silicon. The aluminium oxide thin film layer is usually deposited by atomic layer deposition (ALD) technique, which is expensive and has low deposition rate. In this study, ICP-assisted reactive magnetron sputtering technique was adopted to overcome drawbacks of ALD technique. In addition, it has been known that by annealing aluminium oxide layer in nitrogen atmosphere, the negative fixed charge effect could be further improved. By using ICP-assisted reactive magnetron sputtering technique, oxygen to nitrogen ratio could be precisely controlled. Fabricated aluminium oxy-nitride (AlON) layer on silicon wafers were analyzed by x-ray photoelectron spectroscopy (XPS) to investigate the atomic concentration ratio and chemical states. The electrical properties of Al/($Al_2O_3$ or $SiO_2/Al_2O_3$)/Si (MIS) devices were characterized by the C-V measurement technique using HP 4284A. The detailed characteristics of the AlON passivation layer will be shown and discussed.

• Journal of the Korean Institute of Telematics and Electronics T
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• v.36T no.1
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• pp.8-12
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• 1999

$\textrm{WO}_3$ semiconductive film, which is known to have a sensitivity on $\textrm{NO}_X$ gas was prepared on 8YSZ (8% Yttria stabilized $\textrm{ZrO}_2$) ionic conductor substrate that has oxygen ion pumping effect. Microstructure and electrical properity, especially $\textrm{NO}_X$ sensitivity as a function of DC voltage applied to 8YSZ substrate was examined. When the $\textrm{WO}_3$ film was annealed, it showed amorphous structure, while crystallization was occurred at $600^{\circ}$C revealing orthorhombic phase of $\textrm{WO}_3$. As the annealing temperature increases, (111) and (001) peaks of $\textrm{WO}_3$ film was enhanced. At $400^{\circ}C$ when DC voltage was applied, comparing with no DC bias, more stable and large response characteristics was showed, and the best sensitivity was observed at 2V. Recovery characteristics of NO gas was much better that that of $\textrm{NO}_2$ gas.

• Korean Journal of Materials Research
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• v.11 no.11
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• pp.960-964
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• 2001

$Bi_{3.99}Ti_{2.97}V_{0.03}O_{12}$ (BTV) thin films with 3 mol% vanadium doping were Prepared on $Pt/Ti/SiO_2/Si$ substrate by sol-gel method. X-ray diffraction analysis indicated that single-phase layered perovskite were obtained and preferred orientation was not observed. Under the annealing temperature at $600^{\circ}C$, the surface morphology of the BTV thin films had fine-rounded particles and then changed plate-like at $650^{\circ}C$ and $700^{\circ}C$. The remanent polarization $(2P_r)$ and coercive field $(2E_c)$ of $700^{\circ}C$ annealed BTV thin film were 25 $\mu$C/cm$^2$ and 116 kV/cm, respectively. In addition, BTV thin film showed little polarization fatigue during $10_9$ switching cycles. These improved ferroelectric properties were attributed to the increased rattling space and reduced oxygen vacancies by substitution $Ti^{4+}$ ion (68 pm) with smaller $V^{5+}$ ion (59 pm). The dielectric constant and loss were measured 130 and 0.03 at 10 kHz, respectively.

• Proceedings of the Korean Vacuum Society Conference
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• 2013.02a
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• pp.543-543
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• 2013

Thin-film transistors (TFTs) based on oxide semiconductors have been regarded as promising alternatives for conventional amorphous and polycrystalline silicon TFTs. Oxide TFTs have several advantages, such as low temperature processing, transparency and high field-effect mobility. Lots of oxide semiconductors for example ZnO, SnO2, In2O3, InZnO, ZnSnO, and InGaZnO etc. have been researched. Particularly, zinc-tin oxide (ZTO) is suitable for channel layer of oxide TFTs having a high mobility that Sn in ZTO can improve the carrier transport by overlapping orbital. However, some issues related to the ZTO TFT electrical performance still remain to be resolved, such as obtaining good electrical contact between source/drain (S/D) electrodes and active channel layer. In this study, the bottom-gate type ZTO TFTs with staggered structure were prepared. Thin films of ZTO (40 nm thick) were deposited by DC magnetron sputtering and performed at room temperature in an Ar atmosphere with an oxygen partial pressure of 10%. After annealing the thin films of ZTO at $400^{\circ}C$ or an hour, Cu, Mo, ITO and Ti electrodes were used for the S/D electrodes. Cu, Mo, ITO and Ti (200 nm thick) were also deposited by DC magnetron sputtering at room temperature. The channel layer and S/D electrodes were defined using a lift-off process which resulted in a fixed width W of 100 ${\mu}m$ and channel length L varied from 10 to 50 ${\mu}m$. The TFT source/drain series resistance, the intrinsic mobility (${\mu}i$), and intrinsic threshold voltage (Vi) were extracted by transmission line method (TLM) using a series of TFTs with different channel lengths. And the performances of ZTO TFTs were measured by using HP 4145B semiconductor analyzer. The results showed that the Cu S/D electrodes had a high intrinsic field effect mobility and a low effective contact resistance compared to other electrodes such as Mo, ITO and Ti.