• Proceedings of the Korean Vacuum Society Conference
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• 2016.02a
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• pp.162-162
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• 2016

We present multifunctional indium tin oxide (ITO) thin films formed at room temperature by a normal sputtering system equipped with a plasma limiter which effectively blocks the bombardment of energetic negative oxygen ions (NOIs). The ITO thin film possesses not only low resistivity but also high gas diffusion barrier properties even though it is deposited on a plastic substrate at room temperature without post annealing. Argon neutrals incident to substrates in the sputtering have an optimal energy window from 20 to 30 eV under the condition of blocking energetic NOIs to form ITO nano-crystalline structure. The effect of blocking energetic NOIs and argon neutrals with optimal energy make the resistivity decrease to $3.61{\times}10-4{\Omega}cm$ and the water vapor transmission rate (WVTR) of 100 nm thick ITO film drop to $3.9{\times}10-3g/(m2day)$ under environmental conditions of 90% relative humidity and 50oC, which corresponds to a value of ~ 10-5 g/(m2day) at room temperature and air conditions. The multifunctional ITO thin films with low resistivity and low gas permeability will be highly valuable for plastic electronics applications.

• Proceedings of the Korean Vacuum Society Conference
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• 2016.02a
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• pp.307.1-307.1
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• 2016

Amorphous zinc tin oxide (ZTO) thin films are being widely studied for a variety electronic applications such as the transparent conducting oxide (TCO) in the field of photoelectric elements and thin film transistors (TFTs). Thin film transistors (TFTs) with transparent amorphous oxide semiconductors (TAOS) represent a major advance in the field of thin film electronics. Examples of TAOS materials include zinc tin oxide (ZTO), indium gallium zinc oxide (IGZO), indium zinc oxide, and indium zinc tin oxide. Among them, ZTO has good optical and electrical properties (high transmittance and larger than 3eV band gap energy). Furthermore ZTO does not contain indium or gallium and is relatively inexpensive and non-toxic. In this study, ZTO thin films were formed by UHV RF magnetron co-sputter deposition on silicon substrates and sapphires. The films were deposited from ZnO and SnO2 target in an RF argon and oxygen plasma. The deposition condition of ZTO thin films were controlled by RF power and post anneal temperature using rapid thermal annealing (RTA). The deposited and annealed films were characterized by X-ray diffraction (XRD), atomic force microscope (AFM), ultraviolet and visible light (UV-VIS) spectrophotometer.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.28 no.11
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• pp.683-689
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• 2015

For the formation of $N^+$ doping, the antimony ions are mainly used for the fabrication of a BJT (bipolar junction transistor), CMOS (complementary metal oxide semiconductor), FET (field effect transistor) and BiCMOS (bipolar and complementary metal oxide semiconductor) process integration. Antimony is a heavy element and has relatively a low diffusion coefficient in silicon. Therefore, antimony is preferred as a candidate of ultra shallow junction for n type doping instead of arsenic implantation. Three-dimensional (3D) profiles of antimony are also compared one another from different tilt angles and incident energies under same dimensional conditions. The diffusion effect of antimony showed ORD (oxygen retarded diffusion) after thermal oxidation process. The interfacial effect of a $SiO_2/Si$ is influenced antimony diffusion and showed segregation effects during the oxidation process. The surface sputtering effect of antimony must be considered due to its heavy mass in the case of low energy and high dose conditions. The range of antimony implanted in amorphous and crystalline silicon are compared each other and its data and profiles also showed and explained after thermal annealing under inert $N_2$ gas and dry oxidation.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2009.06a
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• pp.44-44
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• 2009

Recently, transparent ZnO-based TFTs have attracted much attention for flexible displays because they can be fabricated on plastic substrates at low temperature. We report the fabrication and characteristics of ZnO channel layers(ZnO TFTs) having different channel thicknesses. The ZnO film were deposited as active channel layers on $Si_3N_4/Ti/SiO_2p$-Si substrates by rf magnetron sputtering at $100\;^{\circ}C$ without additional annealing. Also the Zno thin films deposited at oxygen partial pressures of 40%. ZnO TFTs using a bottom-gate configuration were investigated. The $Si_3N_4$ film were deposited as gate insulator by PE-CVD at $15\;^{\circ}C$. All Processes were processed below $150^{\circ}C$ which is optimal temperature for flexible display and were used dry etching method.

• Journal of the Institute of Electronics Engineers of Korea SD
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• v.38 no.5
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• pp.17-17
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• 2001

고유전 (Ba, Sr)TiO₃ (BST) 박막을 이용한 DRAM storage capacitor의 저전계 영역에서의 전하손실을 발생시키는 커패시터의 누설전류는 유전완화전류와 진성 누설전류로 이루진다고 알려져 있다. 특히, 기가급 DRAM의 동작 전압(~IV)에서 유전완화전류가 진성 누설전류에 비해 훨씬 크기 때문에 이에 대한 심도 있는 연구가 필요하다. 본 연구에서는 thermally stimulated current (TSC) 측정법을 BST 박막에 처음으로 적용하여 트랩의 에너지 level 및 공정변화에 따른 트랩 밀도의 상대적 평가를 하였다. 그리고, 기존에 사용되던 전류-전압(I-V) 측정이나 전류-시간(I-t) 측정과 비교 및 분석함으로써 유전완화 전류의 원인을 규명하고 TSC 측정법의 신뢰성을 살펴보았다. 먼저 안정적인 TSC 측정을 위해 전계, 시간, 온도 및 승온속도에 따른 polarization condition을 알아보았다 이 조건을 이용한 TSC 측정으로부터 BST 박막에서의 트랩의 energy level이 0.20(±0.01) eV와 0.45(±0.02) eV임을 알 수 있었다. Rapid thermal annealing (RTA)을 이용한 후속 열처리에 따른 TSC 측정을 통하여 이 트랩들이 산소결핍(oxygen vacancy)에 기인함을 확인할 수 있었다. MIM BST 커패시터의 열처리에 대한 TSC 특성은 전류-전압(I-V) 및 전류-시간(I-t) 특성과 같은 경향성을 보인다. 이것은 TSC 측정이 BST 박막내의 트랩을 평가하는데 있어서 매우 효과적인 방법이라는 것을 보여준다.

• Journal of the Microelectronics and Packaging Society
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• v.11 no.3 s.32
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• pp.63-70
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• 2004

The structural, electrical properties of $(Ba, Sr)TiO_3[BSTO]/RuO_2$ thin films were examined by the addition of amorphous BSTO layer between crystlline BSTO film and $RuO_2$ substrate. We prepared BSTO films with double-layered structure, that is, amorphous layers deposited at $60^{\circ}C$ and crystalline films. Crystalline films were prepared at 550 on amorphous BSTO layer. The thickness of the amorphous layers was varied from 0 to 170 nm. During the deposition of crystalline films, the crystallization of the amorphous layers occurred and the structure was changed to circular while crystalline BSTO films showed columnar structure. Due to insufficient annealing effect, amorphous BSTO phase was observed when the thickness of the amorphous layers exceeded 30 nm. Amorphous BSTO layer could also prevent the formation of oxygen deficient region in $RuO_2$ surface. Leakage current of total BSTO films decreased with increasing amorphous layer thickness due to structural modifications. Dielectric constant showed maxi-mum value of 343 when amorphous layer thickness was 30 nm at which the improvement by grain growth and the degradation by amorphous phase were balanced.

• Electronics and Telecommunications Trends
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• v.5 no.1
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• pp.55-70
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• 1990

SIMOX SOI is known to be one of the most useful technologies for fabrications of new generation ULSI devices. This paper describes the current status of SIMOX SOI technology for ULSI applications. The SIMOX wafer is vertically composed of buried oxide layer and silicon epitaxial layer on top of the silicon substrate. The buried oxide layer is used for the vertical isolation of devices The oxide layer is formed by high energy ion implantation of high dose oxygen into the silicon wafer, followed by high temperature annealing. SIMOX-based CMOS fabrication is transparent to the conventional IC processing steps without well formation. Furthermore, thin film CMOX/SIMOX can overcome the technological limitations which encountered in submicron bulk-based CMOS devices, i.e., soft-error rate, subthreshold slope, threshold voltage roll-off, and hot electron degradation can be improved. SIMOX-based bipolar devices are expected to have high density which comparable to the CMOX circuits. Radiation hardness properties of SIMOX SOI extend its application fields to space and military devices, since military ICs should be operational in radiation-hardened and harsh environments. The cost of SIMOX wafer preparation is high at present, but it is expected to reduce as volume increases. Recent studies about SIMOX SOI technology have demonstrated that the performance of the SIMOX-based submicron devices is superior to the circuits using the bulk silicon.

• Proceedings of the KIEE Conference
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• 1989.07a
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• pp.310-313
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• 1989

The semiconducting bodies were prepared by doping the bariume titanate with $Sb_2O_3,Nb_2O_5$and by subsequent sintering in air. The sintered bodies were annealed between $1100^{\circ}C$ and $1250^{\circ}C$ for 30 minutes to 2 hours in air. The resistivity was measured as a function of temperature from $20^{\circ}C$ to $240^{\circ}C$. The anomalous effect in resistivity occurred all of the $Nb_2O_5$ and $Sb_2O_3$doped barium titanate specimens, which were sintered in air atmosphere, and the most effective PTC effect occurred through 1 hour of sintering time at $1350^{\circ}C$ and 30 minute of annealing time at $1200^{\circ}C$. The resistivity - temperature characteristics seem to be intimately related to oxygen adsorption at grain boundaries and also to the thickness of insulating layers formed at grain boundaries during heat treatment.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2004.07b
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• pp.1033-1036
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• 2004

Si nanocrystallites thin films on p-type (100) Si substrate have been fabricated by pulsed laser deposition using a Nd:YAG laser. After deposition, samples were annealed at the temperatures of 400 to $800^{\circ}C$. Hydrogen passivation was then performed in the forming gas (95% $N_2$ + 5% $H_2$) for 1 hr. Strong violet-indigo photoluminescence has been observed at room temperature from nitrogen ambient-annealed Si nanocrystallites. The variation of photoluminescence (PL) Properties of Si nanocrystallites thin films has been investigated depending on annealing temperatures with hydrogen passivation. From the results of PL, Fourier transform infrared (FTIR), and high-resolution transmission electron microscopy (HRTEM) measurements, it is observed that the origin of violet-indigo PL from the nanocrystalline silicon in the silicon oxide film is related to the quantum size effect of Si nanocrystallites and oxygen vacancies in the SiOx(x : 1.6-1.8) matrix affects the emission intensity.

• 한국초전도학회:학술대회논문집
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• v.10
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• pp.146-150
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• 2000

Two methods have been investigated to fabricate good quality step-edge Josephson junctions on STO, MgO, and LAO single crystal substrates. One is the annealing of substrates at 1050$^{\circ}$C in 1 atmospheric oxygen after Ar-ion milling. The other is the cleaning of step-edge by using Ar ion milling. The step-edge is characterized with atomic force microscope (AFM) images. And YBCO thin films are deposited by using pulsed laser. The I-V properties of step-edge junctions are characterized. The yield rate of step-edge junction is increased by new fabrication methods.