• Proceedings of the Korean Vacuum Society Conference
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• 1995.06a
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• pp.145-145
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• 1995

• Proceedings of the Materials Research Society of Korea Conference
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• 1997.10a
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• pp.68-68
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• 1997

• Proceedings of the Korean Vacuum Society Conference
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• 2008.08a
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• pp.131-131
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• 2008

• Proceedings of the Materials Research Society of Korea Conference
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• 2008.05a
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• pp.40.2-40.2
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• 2008

• Proceedings of the Korean Magnestics Society Conference
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• 2008.12a
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• pp.58.2-58.2
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• 2008

• Proceedings of the Korean Magnestics Society Conference
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• 2008.12a
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• pp.53.1-53.1
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• 2008

• Bulletin of the Korean Chemical Society
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• v.33 no.7
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• pp.2255-2259
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• 2012

Aggregation of titania nanotubes (TNTs) fabricated by hydrothermal method were calcined in air and dry nitrogen; Changes in morphology and crystallinity of the nanotubes were studied by means of TEM, EDX, and XPS. EDX patterns and XPS spectra proved that there were a certain densities of oxygen vacancies in TNTs annealed in $N_2$. The photocatalysis experiments revealed TNTs/$N_2$ possesses significantly higher photocatalytic efficiency than TNTs annealed in dry air to degrade methylene blue. The correlation between oxygen vacancies and photocatalytic property may be attributed to: 1) oxygen vacancies might have affected results on water molecules adsorption and increase of the hydroxyl concentration; and 2) oxygen vacancies resulted in some changes in electronic structure of TNTs/$N_2$ aggregation and Fermi level extends into the conducting band.

• Proceedings of the IEEK Conference
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• 2002.07a
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• pp.365-368
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• 2002

We investigated the influence of RTP annealing of multi-layered metal films deposited on oxides layer. Two types of oxides, BPSG and P-7205, were used as a bottom layer under multi-layered metal film. The bonding was not good in metal/BPSG/Si samples because adhesion between metal layer and BPSG oxide layer was poor by interfacial reaction during RTP annealing above 650$^{\circ}C$. On the other hand bonding was always good in metal/ P-TEOS /Si samples regardless of annealing temperature. We observed the interface between oxide and metal layers using AES and TEM. The phosphorus and oxygen profile in interface between metal and oxide layers were different in metal/BPSG/Si and metal/P-TEOS/Si samples. We have known that the properties of interface was improved in metal/BPSG/Si samples when the sample was annealed below 650$^{\circ}C$.

• Korean Journal of Materials Research
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• v.18 no.9
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• pp.486-491
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• 2008

The effect of annealing treatment conditions on the interfacial adhesion energy between electrolessplated Ni film and polyimide substrate was evaluated using a $180^{\circ}$ peel test. Measured peel strength values are $26.9{\pm}0.8,\;22.4{\pm}0.8,\;21.9{\pm}1.5,\;23.1{\pm}1.3,\;16.1{\pm}2.0\;and\;14.3{\pm}1.3g/mm$ for annealing treatment times during 0, 1, 3, 5, 10, and 20 hours, respectively, at $200^{\circ}C$ in ambient environment. XPS and AES analysis results on peeled surfaces clearly reveal that the peeling occurs cohesively inside polyimide. This implies a degradation of polyimide structure due to oxygen diffusion through interface between Ni and polyimide, which is also closely related to the decrease in the interfacial adhesion energy due to thermal treatment in ambient conditions.

• Proceedings of the KIEE Conference
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• 2009.07a
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• pp.1343_1344
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• 2009

In this work, transparent conducting Al-doped zinc oxide (AZO) films were prepared on Corning glass substrate by RF magnetron sputtering using an Al-doped ZnO target (Al: 2 wt.%) at room temperature and all films were deposited with athickness of 150 nm. We investigated the effects of the post-annealing temperature and the annealing ambient on structural, electrical and optical properties of AZO films. The films were annealed at temperatures ranging from 300 to $500^{\circ}C$ in steps of $100^{\circ}C$ using rapid thermal annealing equipment in oxygen. The thickness of the film was observed by field emission scanning electron microscopy (FE-SEM) and grain size was calculated from the XRD spectra using the Scherrer equation and their electrical properties were investigated using a hole measurement and the reflectance of AZO films was investigated by UV-VIS spectrometry.