• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2001년도 하계학술대회 논문집
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• pp.355-357
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• 2001

ZnO thin films were deposited on (001) sapphire substrate at various ambient gas pressure by pulsed laser deposition(PLD). Oxygen was used as ambient gas, and oxygen gas pressure was varied from 1.0${\times}$10$\^$-6/ Torr to 500 mTorr during the film deposition. As oxygen gas pressure increase in the region below critical pressure photoluminescence(PL) intensity in UV and green region increase. As oxygen gas pressure increase in the region above critical pressure photoluminescence(PL) intensity in UV and green region decrease. Each of critical ambient gas Pressures was 350 mTorr for UV emission and 200 mTorr for green emission.

• Bulletin of the Korean Chemical Society
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• 제18권6호
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• pp.640-643
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• 1997

Pure titanium dioxide $(TiO_2)$ films were prepared by pulsed laser deposition on a single crystal Si(100) substrate. We have investigated the growth of crystalline titanium dioxide films with respect to substrate temperature and ambient oxygen pressure. The structural properties of the films were analyzed by X-ray diffraction. We found that the anatase as well as the rutile phases could be formed from the original rutile phase of the target $TiO_2$. At 0.75 torr of ambient oxygen pressure, the structure of $TiO_2$ film was amorphous at room temperature, anatase between 300 and 600 ℃, a mixture of anatase and rutile between 700 and 800 ℃, and only rutile at 900 ℃ and above. However, at a low ambient oxygen pressure, the rutile phase became dominant; the only rutile phase was obtained at the ambient oxygen pressure of 0.01 torr and the substrate temperature of 800 ℃. Therefore, the film structures were largely influenced by substrate temperature and ambient oxygen pressure.

• 한국전기전자재료학회논문지
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• 제13권1호
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• pp.28-32
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• 2000

Structural and electrical properties of (Ba, Sr)TiO\ulcorner (BST) thin films prepared by pulsed laser depositon were investigated to verify the influences of post-annealing in oxygen ambient. Increase of post-anneal-ing time in oxygen ambient resulted in not only grain growth but also improvement of crystallinity of BST films. Although the post-annealing in oxygen ambient resulted in the increase of surface roughness, it assisted the dielectric constant increase by eliminating oxygen vacancies. The electrical property enhancement including high dielectric constant and low leakage current density was associated with introducing high pressure of oxygen during the post-annealing.

• 한국분무공학회지
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• 제19권4호
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• pp.211-215
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• 2014

The main purpose of this study is to provide basic information of droplet soot generation of decane fuel. To achieve this, this paper presents the experimental results on the decane droplet combustion conducted under various ambient pressure($P_{amb}$), and oxygen concentration($O_2$) conditions. At the same time, the experimental study was conducted in terms of soot volume fraction($f_v$) and its maximum value. Also, visualization of single fuel droplet was conducted by high resolution CCD camera and ambient pressure($P_{amb}$) and oxygen concentration($O_2$) was changed by control system. It was revealed that higher ambient pressure($P_{amb}$), and oxygen concentration($O_2$) enhanced the soot generation and improved the maximum soot volume fraction( $f_v$).

• 한국재료학회지
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• 제17권6호
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• pp.303-307
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• 2007

ZnO thin films were prepared by pulsed laser deposition on amorphous fused silica substrates at different ambient $O_2$ pressures varying from 0.5 to 500 mTorr, to observe the effect of ambient gas on their crystalline structure, morphology and optical properties. Results of X-ray diffraction, scanning electron microscopy, atomic force microscopy and photoluminescence studies showed that crystallinity, surface features and optical properties of the films significantly depended on the oxygen background pressure during growth. A low oxygen pressure (0.5 mTorr) seems to be suitable for the growth of highly c-axis oriented and smoother films possessing a superior luminescent property. The films grown at the higher $O_2$ pressures (50-500 mTorr) were found to have many defects probably due to an excessive incorporation of oxygen into ZnO lattice. We speculate that the film crystallinity could be affected by the kinetics of atomic arrangement during deposition at the higher oxygen pressures.

• 한국화재소방학회논문지
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• 제22권2호
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• pp.57-62
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• 2008

한국의 실내장식재로는 대부분 벽지를 사용하고 있다. 이러한 주거공간에 화재발생시 화재 확대요인중의 하나는 벽지의 연소를 통해 이루어진다. 그동안 산소지수 관련연구들이 많이 이루어져 왔지만 상온에서의 연구가 많았다. 본 연구에서는 실내화재에서 화재의 확대요인이 될 수 있는 벽지의 산소지수가 상온과 고온에서 얼마나 차이가 발생하며 이러한 차이가 화재확대에 미치는 영향을 고찰하고자 하였다. 실험을 통해 LOI 및 TOI 측정한 결과 벽지의 상온과 고온에서의 산소지수는 $5{\sim}8%$정도의 차이가 나타났다. 실험에서 산소지수 0.1%의 차이로도 연소 길이에 현저한 차이가 나타나기 때문에 고온에서의 산소지수 감소가 화재확대에 큰 영향을 미치는 요인임을 알 수 있었다.

• JSTS:Journal of Semiconductor Technology and Science
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• 제1권2호
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• pp.95-102
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• 2001

Hafnium oxide thin films for gate dielectric were deposited at $300^{\circ}C$ on p-type Si (100) substrates by plasma enhanced chemical vapor deposition (PECVD) and annealed in $O_2$ and $N_2$ ambient at various temperatures. The effect of hydrogen treatment in 4% $H_2$ at $350^{\circ}C$ for 30 min on the electrical properties of $HfO_2$for gate dielectric was investigated. The flat-band voltage shifts of $HfO_2$capacitors annealed in $O_2$ambient are larger than those in $N_2$ambient because samples annealed in high oxygen partial pressure produces the effective negative charges in films. The oxygen loss in $HfO_2$films was expected in forming gas annealed samples and decreased the excessive oxygen contents in films as-deposited and annealed in $O_2$ or $N_2$ambient. The CET of films after hydrogen forming gas anneal almost did not vary compared with that before hydrogen gas anneal. Hysteresis of $HfO_2$films abruptly decreased by hydrogen forming gas anneal because hysteresis in C-V characteristics depends on the bulk effect rather than $HfO_2$/Si interface. The lower trap densities of films annealed in $O_2$ambient than those in $N_2$were due to the composition of interfacial layer becoming closer to $SiO_2$with increasing oxygen partial pressure. Hydrogen forming gas anneal at $350^{\circ}C$ for samples annealed at various temperatures in $O_2$and $N_2$ambient plays critical role in decreasing interface trap densities at the Si/$SiO_2$ interface. However, effect of forming gas anneal was almost disappeared for samples annealed at high temperature (about $800^{\circ}C$) in $O_2$ or $N_2$ambient.

• 한국화재소방학회논문지
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• 제15권4호
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• pp.34-40
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• 2001

HPMC의 자연발화는 일정한 주위온도에서 자연발화의 연구와 Godbret-Greenwald가 고안한 전기로에서 운상상태의 최소발화온도를 구하였으며, 시료를 용기에 충전했을 경우 용기의 크기가 클수록 발화한계 온도는 낮아졌으며 겉보기활성화에너지는 Frank-Kamenetskii의 열발화이론으로부터 계산하였고, 운상상태의 발화온도는 21%의 산소농도하에서 최소발화온도를 구하였으며, 산소농도 변화의 실험결과 산소농도 10%에서 발화되지 않았으며 한계산소농도를 구할 수 있었다.

• Applied Microscopy
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• 제47권3호
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• pp.176-186
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• 2017

Two-dimensional (2D) materials have been studied widely owing to their outstanding properties since monolayer graphene was isolated in 2004. Especially, among 2D materials, phosphorene, a single atomic layer of black phosphorus (BP), has been highlighted for its electrical properties. This material can serve as a substitute for graphene, which has been revealed as a "semi-metal", in next-generation semiconductors. However, few-layer BP is prone to degradation under ambient conditions owing to its reactivity with oxygen and water, which results in the condensation of water droplets on the surface of the BP flakes. This causes charge transfer from the phosphorus atom to oxygen, resulting in the formation of phosphoric acid (oxide) and degrades the various properties of BP. Therefore, it is necessary to find passivation methods to prevent BP flakes from being degraded under ambient conditions. This review article deals with recent studies on passivation methods for BP and their performance against oxygen and water, effects on the electrical properties of BP, and the extent to how they protect BP.

• 반도체디스플레이기술학회지
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• 제7권3호
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• pp.51-54
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• 2008

In this study, we investigated variations in undoped ZnO thin film properties with working pressure, $O_2$/Ar ratio, and annealing ambient. Higher vacuum pressure during deposition was observed to bring about slower growth rate resulting in samples with better crystallinity as well as hole generation efficiency through formation of shallower oxygen interstitial. Given that $O_2$/Ar ratio is greater than unity, O provided from the ambient to ZnO during annealing was found to preferably situate at interstitial sites. When He was used for the second annealing, significant changes were not observed. On the other hand, O ambient caused increased density of oxygen interstitial, thereby making the film more intrinsic-like high resistivity ZnO.