• 한국진공학회:학술대회논문집
• /
• 한국진공학회 2011년도 제40회 동계학술대회 초록집
• /
• pp.499-499
• /
• 2011

Silicon nanowires (Si NWs) have been extensively studied for nanoelectronics owing to their unique optical and electrical properties different from those of bulk silicon. For the development of Si NW devices, better understanding of oxidation behavior in Si NWs would be an important issue. For example, it is widely known that atomic scale roughness at the dielectric (SiOx)/channel (Si) interface can significantly affect the device performance in the nano-scale devices. However, the oxidation process at the atomic-scale is still unknown because of its complexity. In the present work, we investigated the oxidation behavior of Si NW in atomic scale by simulating the dry oxidation process using a reactive molecular dynamics simulation technique. We focused on the residual stress evolution during oxidation to understand the stress effect on oxidation behavior of Si NWs having two different diameters, 5 nm and 10 nm. We calculated the charge distribution according to the oxidation time for 5 and 10 nm Si NWs. Judging from this data, it was observed that the surface oxide layer started to form before it is fully oxidized, i.e., the active diffusion of oxygen in the surface oxide layer. However, it is well-known that the oxide layer formation on the Si NWs results in a compressive stress on the surface which may retard the oxygen diffusion. We focused on the stress evolution of Si NWs during the oxidation process. Since the surface oxidation results in the volume expansion of the outer shell, it shows a compressive stress along the oxide layer. Interestingly, the stress for the 10 nm Si NW exhibits larger compressive stress than that of 5 nm Si NW. The difference of stress level between 5 an 10 anm Si NWs is approximately 1 or 2 GPa. Consequently, the diameter of Si NWs could be a significant factor to determine the self-limiting oxidation behavior of Si NWs when the diameter was very small.

• 한국전기전자재료학회:학술대회논문집
• /
• 한국전기전자재료학회 1996년도 추계학술대회 논문집
• /
• pp.67-70
• /
• 1996

In this paper, the three-dimensional stress effect of thermal oxide is simulated. We developed the three-dimensional finite element numerical simulator including three-dimensional adaptive mesh generator that is able to refine and eliminate nearby moving boundary of oxide, and oxidation solver with stress model. The main effect of deformation at the coner area of oxide is due to distribution of oxidant, but the deformation of oxide is affected by the stress in the oxide. In the island structure which is the structure mostly covered with nitride and a coner is opened to oxidation, oxidation is reduced at the coner by compressive stress. In the hole structure which is the structure mostly opened to oxide and a coner is covered with nitride, however, oxidation is increased at the coner by tensile stress.

• Preventive Nutrition and Food Science
• /
• 제17권2호
• /
• pp.158-165
• /
• 2012

This study was designed to investigate whether the fatty acid composition could make a significant contribution to the oxidation stability of vegetable oils marketed in Korea. Ten kinds, 97 items of vegetable oils that were produced in either an industrialized or a traditional way were collected and analyzed for their fatty acid compositions and lipid oxidation products, in the absence or presence of oxidative stress. Peroxidability index (PI) calculations based on the fatty acid composition ranged from 7.10 to 111.87 with the lowest value found in olive oils and the highest in perilla oils. In the absence of induced oxidative stress, malondialdehyde (MDA), the secondary lipid oxidation product, was generated more in the oils with higher PI (r=0.890), while the tendency was not observed when the oils were subjected to an oxidation-accelerating system. In the presence of the oxidative stress, the perilla oils produced in an industrialized manner generated appreciably higher amounts of MDA than those produced in a traditional way, although both types of oils presented similar PIs. The results implicate that the fatty acid compositions could be a predictor for the oxidation stability of the vegetable oils at the early stage of oil oxidation, but not for those at a later stage of oxidation.

• 전자공학회논문지D
• /
• 제34D권2호
• /
• pp.38-45
• /
• 1997

본 논문에서는 반도체 소자 제조 공정 중, 염산화 공정 시에 발생하는 스트레스에 따른 산화막의 3차원적 거동을 시뮬레이션하였다. 이를 위해, 이동하는 3차원 경계면에서의 노드 생성 및 제거 기능을 지는 3차원 적응 메쉬 생성기를 개발하였고, 지배 방정식을 유한요소법(finite element method)으로 이산화시켜 수치 해석적으로 해를 구하는, 스트레스 효과를 고려한 3차원 산화 시뮬레이터를 개발하였다. 본 연구에서는 열산화 공정에 의한 산화막의 3차원적 거동을 관찰하기 위하여, 섬구조(island) 및 공구조(hole structure)의 산화막 성장을 <100> 실리콘 기판에 대하여 $1000^{\circ}C$, 60분간 습식 산화 조건에서 시뮬레이션하였다. 초기 산화막의 두께는 $300\AA$, 질화막의 두께는 $2,000\AA$으로 가정하였다. 마스크의 형태에 따라 코너에서의 새부리(bird's beak)형태가 변하는데, 코너에서의 효과는 마스크 형태에 따라 산화제의 확산이 다른 영역에 비해 감소하거나 증가하는 영향이 주된 이유이지만, 스트레스에 의해 그 영향이 더 커짐을 확인하였다. 섬구조에서는 compressive 스트레스에 의해 코너 부근에서 산화가 감소하는 결과를 가져오고, 공구조에서는 tensile 스트레스로 인해 산화가 더 증가하는 결과를 보임을 확인하였다.

• 한국축산식품학회지
• /
• 제40권5호
• /
• pp.734-745
• /
• 2020

Commercially sterilized ultra high temperature (UHT) milk was manufactured at different homogenization pressures (20, 25, and 30 MPa), and changes in fat particle size, mechanical stress-induced fat aggregation, plasmin activity, and lipid oxidation were monitored during ambient storage of the UHT milk for up to 16 wk. The particle sizes of milk fat globules were significantly decreased as homogenization pressure increased from 20 to 30 MPa (p<0.05). The presence of mechanical stress-induced fat aggregates in milk produced at 20 MPa was significantly higher than for UHT milk produced at either 25 or 30 MPa. This difference was maintained all throughout the storage. There were no significant differences in plasmin activity, trichloroacetic acid (12%, w/v) soluble peptides, and the extent of lipid oxidation. Based on these results, an increase of homogenization pressure from 20 (the typical homogenization pressure employed in the Korea dairy industry) to 25-30 MPa significantly decreased mechanical stress-induced fat aggregation without affecting susceptibility to lipid oxidation during storage.

• 한국표면공학회지
• /
• 제49권4호
• /
• pp.389-394
• /
• 2016

The operation method of nuclear power plants is currently changing to high burn-up and long period that can enhance economics and efficiency of the plant. Since nuclear plant operation environment has been becoming severe, the amount of absorbed hydrogen also has increased. Absorbed hydrogen can be fatal securing safety of nuclear fuel cladding in case of Loss of Coolant Accidents(LOCA). In order to examine the impact of hydride on high-temperature oxidation, high-temperature oxidation experiment was performed on normal Zry-4 cladding and on Zry-4 cladding where hydrogen is charged in air pressure steam atmosphere under the $950^{\circ}C$ and $1000^{\circ}C$. According to the results, while oxidation acceleration due to charged hydrogen was not observed prior to breakaway oxidation creation, oxidation began to accelerate in cladding where hydrogens charged as soon as the breakaway oxidation started. If so much hydrogen are charged in the cladding, equiaxial monoclinic phase to unstable of stress is formed and it is presumed that oxidation is accelerated because nearby stress caused a crack in equiaxial phase, and that makes corrosion resistance decline sharply.

• Journal of Electrochemical Science and Technology
• /
• 제8권1호
• /
• pp.69-76
• /
• 2017

Crystallization of one-dimensional porous tin oxide during the anodic oxidation of tin at ambient temperatures is reported. Remarkable crystallinity is achieved when a substrate with a high elastic modulus (e.g., silicon) is used and the tin coating on it is very thin. It is suggested that the compressive stress applied to the anodic tin oxide during the anodization process is the key factor affecting the degree of crystallinity. The measured value of the stress generated during anodization matches well with the range of the most favorable theoretical pressure (stress) for crystallization.

• 한국전기전자재료학회논문지
• /
• 제16권3호
• /
• pp.181-185
• /
• 2003

Influence of post gate oxidation anneal on Negative Bias Temperature Instability (NBTI) of PMOSFE has been investigated. At oxidation anneal temperature raised above 950$^{\circ}$C, a significant improvement of NBTI was observed which enables to reduce PMO V$\_$th/ shift occurred during a Bias Temperature (BT) stress. The high temperature anneal appears to suppress charge generations inside the gate oxide and near the silicon oxide interface during the BT stress. By measuring band-to-band tunneling currents and subthreshold slopes, reduction of oxide trapped charges and interface states at the high temperature oxidation anneal was confirmed.

• 전기학회논문지
• /
• 제56권9호
• /
• pp.1614-1618
• /
• 2007

We have demonstrated the experimental results to obtain the immunity of FN (Fowler Nordheim) stress for S-RCAT (Spherical-Recess Cell Array Transistor) which has been employed to meet the requirements of data retention time and propagation delay time for sub-100-nm mobile DRAM (Dynamic Random Access Memory). Despite of the same S-RCAT structure, the immunity of FN stress of S-RCAT depends on the process condition of gate oxidation. The S-RCAT using DPN (decoupled plasma nitridation) process showed the different degradation of device properties after FN stress. This paper gives the mechanism of FN-stress degradation of S-RCAT and introduces the improved process to suppress the FN-stress degradation of mobile DRAM.

• 소성∙가공
• /
• 제18권4호
• /
• pp.347-353
• /
• 2009

The apparent activation energy, the applied stress exponent, and rupture life have been measured from creep experiments over the range of $200^{\circ}C$ to $220^{\circ}C$ and the applied stress range of 64MPa to 94MPa. The materials were used AZ31 magnesium alloys treated by plasma electrolytic oxidation of $20{\mu}m$ and $40{\mu}m$ at surface to investigate the its influence on creep behavior, and creep tests were carried out under constant applied stress and temperature. The experimental results showed that the dipper the thickness of surface treatment the higher the activation energy and stress exponent. And the higher temperature and applied stress, the lower stress exponent and activation energy, respectively. Also the dipper the thickness of surface treatment the longer creep rupture time.