• 한국세라믹학회지
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• 제32권1호
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• pp.31-36
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• 1995

(100) Si was oxidized in N2O ambient, and the film properties of oxynitride dielectrics were compared with pure SiO2. The growth rate, after pre-oxidation in O2/N2 ambient with raising temperature, is faster than that of O2/N2O treatment during the same condition. Nitrogen piles up at the interface of SiO2 and Si substrate and the content is about 2atom%. Comparing with pure SiO2, oxynitride dielectrics shows less dielectric breakdown failures and flat-band voltage shift, and good diffusion barrier property to dopant(BF2) is also observed.

• 한국초전도ㆍ저온공학회논문지
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• 제4권1호
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• pp.1-3
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• 2002

Single Josephson junctions, which are of cross type, of $50 ${\mu}{\textrm}{m}$ {\times} 50 ${\mu}{\textrm}{m}$$ were fabricated under several oxidation conditions to Investigate controllabilities of critical current density (Jc) with the standard KRISS processes. Considering that the self-field effect suppresses the observed critical current (Ice) at high Jc region, we could reasonably estimate Jc values from I-V observations. The dependence of the obtained Jc as a function of exposure, which is equal to pressure (P) times time (t), was well fitted to a curve of Jc ~ (Pt)-0.34. The maximum Jc value at the controllability margin was found to be 3 kA/cm$^2$with the current equipment set up.

• 한국전기전자재료학회논문지
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• 제18권8호
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• pp.708-713
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• 2005

An alumina membrane with nano-sized pore array by anodic oxidation using the thin film aluminum deposited on silicon wafer was fabricated. It Is important that the sample prepared by metal deposition method has a flat aluminum surface and a good adhesion between the silicon wafer and the thin film aluminum. The oxidation time was controlled by observation of current variation. While the oxalic acid with 0.2 M was used for low voltage anodization under 100 V, the chromic acid with 0.1 M was used for high voltage anodization over 100 V. The nano-sized pores with diameter of $60\~120$ nm was obtained by low voltage anodization of $40\~80$ V and those of $200\~300$ nm was obtained by high voltage anodization of $140\~200$ V. The pore widening process was employed for obtaining the one-channel with flat surface because the pores of the alumina membrane prepared by the fixed voltage method shows the structure of two-channel with rough surface. Finally, the sample was immersed to the phosphoric acid with 0.1 M concentration to etching the barrier layer.

• 한국전기전자재료학회논문지
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• 제23권12호
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• pp.919-923
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• 2010

Copper pillar tin bump (CPTB) was developed for high density chip interconnect technology. Copper pillar tin bumps that have $100{\mu}m$ pitch were introduced with fabrication process using a KM -1250 dry film photoresist (DFR), copper electroplating method and Sn electro-less plating method. Mechanical shear strength measurements were introduced to characterize the bonding process as a function of thermo-compression. Shear strength has maximum value with $330^{\circ}C$ and 500 N thenno-compression process. Through the simulation work, it was proved that when the copper pillar tin bump decreased in its size, it was largely affected by the copper oxidation.

• Journal of Korean Vacuum Science & Technology
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• 제5권2호
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• pp.47-51
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• 2001

To obtain high remnant polarization and good crystalinity of ferroelectric thin films in non-volatile memory devices, the high temperature treatment in oxygen ambient is inevitable. Severe problems that occur in this process are oxygen diffusion into substrate, oxidation of electrode and buffer layer, degradation of microstructure and so on. We made ruthenium dioxide thin film by reactive sputtering with oxygen and argon mixture atmosphere. Comparing quantitatively the core-level spectra of Ru and RuO$_2$ obtained by x-ray photoelectron spectroscopy(XPS), we found that chemical state of RuO$_2$ is very stable and of good resistance to oxygen diffusion and oxidation of adjacent layers. It opens the use of RuO$_2$ thin film as a multifunctional layer of good conducting electrode and resistive barrier for the diffusion and the oxidation. We also suggest a correct understanding of Ru 3d core-level spectrum for RuO$_2$ based on the scheme of final state screening and charge transfer satellites.

• 한국세라믹학회지
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• 제50권6호
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• pp.439-445
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• 2013

Both an unreinforced $Al_2O_3$/Al matrix and a ${\alpha}-Al_2O_3$ particulate reinforced composite have been produced by the oxidation of an Al surface doped with NaOH in the absence of any other dopant. Fabrication of the matrix was initiated by the formation of $NaAlO_2$, which provides a favorable surface structure for the matrix formation by breaking the protective $Al_2O_3$ layer on Al. During the matrix growth, the external surface of the growth front was covered with a very thin sodium-rich oxide. A cyclic formation process of the sodium-rich oxide on the growth surface was proposed for the sodium-induced directed metal oxidation process. This process involves dissolution of the sodium-rich oxide, motion of Na to the growth front, and re-formation of the oxide on the surface. Near-net-shape composites were fabricated by infiltrating an $Al_2O_3$/Al matrix into a ${\alpha}-Al_2O_3$ particulate preform, without growth barrier materials. The infiltration distance increased almost linearly in the NaOH-doped preform.

• 한국전기전자재료학회논문지
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• 제14권11호
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• pp.934-940
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• 2001

Magnetic properties were investigated for Si/SiO$_2$/NiFe(300 )/A1$_2$O$_3$(t)/Co(200 ) junction related with the parameters of $Al_2$O$_3$. Insulating $Al_2$O$_3$ layer was formed by depositing a 5~40 thick Al layer, followed by a 90~120s RF plasma oxidation in an $O_2$ atmosphere. Magnetoresistance was not observed for tunnel junction with 5~10 thick Al layer, but magnetoresistance was observed large for tunnel junction with 15~40 thick Al layer. Oxidation time did not largely influence magnetoresistance. Tunnel magnetoresistance effect depended on magnetization behavior of two ferromagnetic layers. Tunneling junction was confirmed through nonlinear I-V curve. In this work, tunneling magnetoresistance(TMR) up to 30 % was observed. This apparent TMR is an artifact of the nonuniform current flow over the junction in the cross geometry of the electrodes.

• 한국표면공학회지
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• 제34권2호
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• pp.161-168
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• 2001

A Thermal Barrier Coating (TBC) can play an important role in protecting parts from harmful environments at high temperatures such as oxidation, corrosion, and wear in order to improve the efficiency of aircraft engines by lowering the surface temperature of the turbine blade. The TBC can increase the life span of the product and improve the operating properties. Therefore, in this study the mechanical and thermal properties of the TBC such as oxidation, fatigue and shock at high temperatures were evaluated. A samples of a bond coat (CoNiCrAlY) produced by the High Velocity Oxygen Fuel (HVOF) and Low Pressure Plasma Spray (LPPS) method were used. The thickness of the HVOF coating layer was approximately $450\mu\textrm{m}$ to 500$\mu\textrm{m}$ and the hardness number of the coating layer was between 350Hv and 400Hv. The thickness of the LPPS coating was about 350$\mu\textrm{m}$ to 400$\mu\textrm{m}$ and the hardness number of the coating was about 370Hv to 420Hv. The X-ray diffraction analysis showed that CoNiCrAlY coating layer of the HVOF and LPPS was composed of the $\beta$and ${\gamma}$phase. After the high temperature oxidation test, the oxide scale with about l0$\mu\textrm{m}$ to 20$\mu\textrm{m}$ thickness appeared at the coating surface on the Al-depleted zone was observed under the oxide scale layer.

• 한국자기학회:학술대회 개요집
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• 한국자기학회 2004년도 동계학술연구발표회 논문개요집
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• pp.133-134
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• 2004

• 대한전자공학회논문지
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• 제27권4호
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• pp.541-546
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• 1990

The current conduction and dielectric breakdown properties of oxide grown on phosphorous-doped polysilicon have been investigated by means of the ramped I-V measurements. The effective barrier heights of polyoxide grown by different silicon deposition and oxidation conditions were calculated from the Fowler-Nordheim tunneling characteristic. The average critical fields were also obtained for each film. From the results, the high temperature oxided polyoxide grown on amorphous silicon film shows superior electrical characteristics comparing to the other films.