• Proceedings of the Korean Institute of Surface Engineering Conference
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• 2001.11a
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• pp.57-59
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• 2001

• Proceedings of the Korean Magnestics Society Conference
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• 2000.09a
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• pp.325-326
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• 2000

Low temperature diagnosis was performed as a probe for the integrity of MTJ(Magnetic tunnel junction) process which is optimised for the given plasma oxidation condition. TMR ratio increased slowly with decreasing temperature than that expected from spin wave exitation theory〔1〕. Junction resistance (RJ) does not follow T$\^$-$\frac{1}{2}$/ law below 200 K, indicating another conduction path besides spin polarized tunneling is involved at low temperature. Temperature dependence of conductance dip and bias dependence of TMR with temperature are discussed, from which the quality of tunnel barrier and its formation process can be inferred.

• Journal of the Korea Academia-Industrial cooperation Society
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• v.21 no.8
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• pp.248-255
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• 2020

The effects of the coating thickness on the thermal durability and thermal stability of thermal barrier coatings (TBCs) with a gradient coating thickness were investigated using a flame thermal fatigue (FTF) test and thermal shock (TS) test. The bond and topcoats were deposited on the Ni-based super-alloy (GTD-111) using an air plasma spray (APS) method with Ni-Cr based MCrAlY feedstock powder and yttria-stabilized zirconia (YSZ), respectively. After the FTF test at 1100 ℃ for 1429 cycles, the bond coat was oxidized partially and the thermally grown oxide (TGO) layer was observed at the interface between the topcoat and bond coat. On the other hand, the interface microstructure of each part in the TBC specimen showed a good condition without cracking or delamination. As a result of the TS test at 1100 ℃, the TBC with gradient coating thickness was initially delaminated at a thin part of the coating layer after 37 cycles, and the TBC was delaminated by more than 50% after 98 cycles. The TBCs of the thin part showed more oxidation of the bond coat with the delamination of topcoat than the thick part. The thick part of the TBC thickness showed good thermal stability and oxidation resistance of the bond coat due to the increased thermal barrier effect.

• Journal of Korean Society on Water Environment
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• v.30 no.2
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• pp.175-183
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• 2014

The influence of temperature on the treatment efficiency of chlorinated organic substances contained in groundwater by permeable reactive barrier which is composed of $Fe^{\circ}$ has been investigated by constructing the Pourbaix diagrams for Fe-$H_2O$ system at different temperatures based on thermodynamic estimation. In aerobic condition, the equilibrium potentials for $Fe^{\circ}/Fe^{2+}$ and $Fe^{2+}/Fe^{3+}$ were observed to increase, therefore, the dechlorination reaction for organic pollutants by $Fe^{\circ}$ was considered to decline with temperature due to the diminished oxidation of reactive barrier. The result for the variations of the ionization fraction of $Fe^{2+}$ and $Fe^{3+}$ ion in the pH range of 0 ~ 2.5 obtained by employing Visual MINTEQ program showed that the ionization fraction of $Fe^{2+}$ increased with pH, however, that of $Fe^{3+}$ decreased symmetrically and the extent of the variation of ionization fraction for both ions was raised as temperature rises. The equilibrium pH for $Fe^{3+}/Fe(OH)_3$ was examined to decrease with temperature so that the treatment efficiency of chlorinated organic substance was expected to decrease with temperature due to the enhanced formation of passivating film in aerobic condition. The change of the reactivity of a specific chemical species with temperature was defined quantitatively based on the area of its stable region in Pourbaix diagram and depending on this the reactivity of $Fe^{3+}$ was shown to decrease with temperature, however, that of $Fe(OH)_3$ was decreased monotonously as temperature is raised for $Fe^{3+}/Fe(OH)_3$ equilibrium system. In anaerobic condition, the equilibrium potential for $Fe^{\circ}/Fe^{2+}$ was observed to rise and the equilibrium pH for $Fe^{2+}/Fe(OH)_2$ were examined to decrease as temperature increases, therefore, similar to that for aerobic condition the efficiency of the dechlorination reaction for organic substances was considered to be diminished when temperature rises because of the reduced oxidation of $Fe^{\circ}$ and increased formation of $Fe(OH)_2$ passivating film.

• Journal of Wetlands Research
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• v.16 no.3
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• pp.355-362
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• 2014

Changes of soil properties due to sedimentation and erosion in the river estuary may lead changes in environmental factors that affect plant growth and distribution, Then habitats in the river estuary that provide various ecological functions can also be influenced. Topsoil samples were analyzed in order to understand the soil properties of important barrier islands and habitat types in the Nakdong river estuary. The samples were obtained from Phragmites communis and Scirpus planiculmis habitats, the tidal flats in the southern area of Eulsukdo, and in Mangeummerydeung, Baekhapdeung, and Doyodeung. Analyses results showed that bulk density, pH, organic matter content and total nitrogen concentration which were directly or indirectly affected by vegetation showed significant difference (p<0.05) with habitat types but no differences in water content and oxidation reduction potential which could be affected by soil texture and showed significant difference among barrier islands. Results suggested that soil properties on barrier islands in the Nakdong river estuary were influenced first by geomorphic changes due to sedimentation and erosion, and then by the presence or type of vegetation. A range of physical and chemical properties were analyzed; soil water content and bulk density (physical properties), and organic content and pH (chemical properties) were correlated with seven other soil properties, at a level of significance higher than 90%. These aspects played an important role in determining overall soil properties in the studied area.

• Journal of the Korea Institute of Information and Communication Engineering
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• v.16 no.4
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• pp.759-764
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• 2012

Copper Pillar Tin Bump (CPTB) was investigated for high density chip interconnect technology development, which was prepared by electroplating and electro-less plating methods. Copper pillar tin bumps that have $100{\mu}m$ pitch were introduced with fabrication process using a KM-1250 dry film photoresist (DFR), with copper electroplating for Copper Pillar Bump (CPB) formation firstly, and then tin electro-less plating on it for control oxidation. Electric resistivity and mechanical shear strength measurements were introduced to characterize the oxidation effects and bonding process as a function of thermo-compression. Electrical resistivity increased with increasing oxidation thickness, and shear strength had maximum value with $330^{\circ}C$ and 500 N at thermo-compression process. Through the simulation work, it was proved that the CPTB decreased in its size of conduction area as time passes, however it was largely affected by the copper oxidation.

• Proceedings of the Korean Institute of Information and Commucation Sciences Conference
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• 2010.10a
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• pp.726-729
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• 2010

Copper Pillar Tin Bump (CPTB) was investigated for high density chip interconnect technology development, which was prepared by electroplating and electro-less plating methods. Copper pillar tin bumps that have $100{\mu}m$ pitch were introduced with fabrication process using a KM-1250 dry film photoresist (DFR), with copper electroplating for Copper Pillar Bump (CPB) formation firstly, and then tin electro-less plating on it for control oxidation. Electric resistivity and mechanical shear strength measurements were introduced to characterize the oxidation effects and bonding process as a function of thermo-compression. Electrical resistivity increased with increasing oxidation thickness, and shear strength had maximum value with $330^{\circ}C$ and 500 N thermo-compression process. Through the simulation work, it was proved that when the CPTB decreased in its size, it was largely affected by the copper oxidation.

• Journal of Convergence for Information Technology
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• v.11 no.7
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• pp.104-110
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• 2021

A novel selective oxidation process has been developed for low source/drain (S/D) series resistance of the fin channel metal oxide semiconductor field effect transistor (MOSFET). Using this technique, the selective oxidation fin-channel MOSFET (SoxFET) has the gate-all-around structure and gradually enhanced S/D extension regions. The SoxFET demonstrated over 70% reduction in S/D series resistance compared to the control device. Moreover, it was found that the SoxFET behaved better in performance, not only a higher drive current but also higher transconductances with suppressing subthreshold swing and drain induced barrier lowering (DIBL) characteristics, than the control device. The saturation current, threshold voltage, peak linear transconductance, peak saturation transconductance, subthreshold swing, and DIBL for the fabricated SoxFET are 305 ㎂/㎛, 0.33 V, 13.5 𝜇S, 76.4 𝜇S, 78 mV/dec, and 62 mV/V, respectively.

• Journal of the Korean Ceramic Society
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• v.45 no.9
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• pp.549-555
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• 2008

The thermal barrier coating must withstand erosion when subjected to flowing gas and should also maintain good stability and mechanical properties while it must also protect the turbine component from high temperature, hot corrosion, creep, and oxidation during operation. In this study we investigated the influence of subsurface layer, $Al_2O_3$ or NiCrCoAIY bond coat layer, on the indentation damage behavior of YSZ thermal barrier coating layers deposited by electron beam physical vapor deposition (EB-PVD). The bond coat is deposited using different process such as air plasma spray (APS) or spray of high velocity oxygen fuel (HVOF) and the thickness is varied. Hertzian indentation technique is used to induce micro damages on the coated layer. The stress-strain behaviors are characterized by results of the indentation tests.

• Proceedings of the Korean Vacuum Society Conference
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• 2013.02a
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• pp.438-439
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• 2013

Microelectronic devices의 접촉저항의 향상을 위해 Metal silicides의 형성 mechanism과 전기적 특성에 대한 연구가 많이 이루어지고 있다. 지난 수십년에 걸쳐, Ti silicide, Co silicide, Ni silicide 등에 대한 개발이 이루어져 왔으나, 계속적인 저저항 접촉 소재에 대한 요구에 의해 최근에는 Rare earth silicide에 관한 연구가 시작되고 있다. Rare-earth silicide는 저온에서 silicides를 형성하고, n-type Si과 낮은 schottky barrier contact (~0.3 eV)를 이룬다. 또한, 비교적 낮은 resistivity와 hexagonal AlB2 crystal structure에 의해 Si과 좋은 lattice match를 가져 Si wafer에서 high quality silicide thin film을 성장시킬 수 있다. Rare earth silicides 중에서 ytterbium silicide는 가장 낮은 electric work function을 갖고 있어 낮은 schottky barrier 응용에서 쓰이고 있다. 이로 인해, n-channel schottky barrier MOSFETs의 source/drain으로써 주목받고 있다. 특히 ytterbium과 molybdenum co-deposition을 하여 증착할 경우 thin film 형성에 있어 안정적인 morphology를 나타낸다. 또한, ytterbium silicide와 마찬가지로 낮은 면저항과 electric work function을 갖는다. 그러나 ytterbium silicide에 molybdenum을 화합물로써 높은 농도로 포함할 경우 높은 schottky barrier를 형성하고 epitaxial growth를 방해하여 silicide film의 quality 저하를 야기할 수 있다. 본 연구에서는 ytterbium과 molybdenum의 co-deposition에 따른 silicide 형성과 전기적 특성 변화에 대한 자세한 분석을 TEM, 4-probe point 등의 다양한 분석 도구를 이용하여 진행하였다. Ytterbium과 molybdenum을 co-deposition하기 위하여 기판으로 $1{\sim}0{\Omega}{\cdot}cm$의 비저항을 갖는 low doped n-type Si (100) bulk wafer를 사용하였다. Native oxide layer를 제거하기 위해 1%의 hydrofluoric (HF) acid solution에 wafer를 세정하였다. 그리고 고진공에서 RF sputtering 법을 이용하여 Ytterbium과 molybdenum을 동시에 증착하였다. RE metal의 경우 oxygen과 높은 반응성을 가지므로 oxidation을 막기 위해 그 위에 capping layer로 100 nm 두께의 TiN을 증착하였다. 증착 후, 진공 분위기에서 rapid thermal anneal(RTA)을 이용하여 $300{\sim}700^{\circ}C$에서 각각 1분간 열처리하여 ytterbium silicides를 형성하였다. 전기적 특성 평가를 위한 sheet resistance 측정은 4-point probe를 사용하였고, Mo doped ytterbium silicide와 Si interface의 atomic scale의 미세 구조를 통한 Mo doped ytterbium silicide의 형성 mechanism 분석을 위하여 trasmission electron microscopy (JEM-2100F)를 이용하였다.