• Journal of the Institute of Electronics Engineers of Korea SD
• /
• v.48 no.10
• /
• pp.62-66
• /
• 2011

In this study, a new RF method to extract the drain-source voltage Vds-dependent gate-bulk capacitance of deep-submicron MOSFETs is developed by determining Vds-independent gate-source overlap capacitance using measured S-parameters. The accuracy of extraction method is verified by observing good agreements between the measured and modeled S-parameters. The lateral channel doping profile in the drain region is experimentally measured using a Vds-dependent curve of the overlap and depletion length obtained from the extracted data.