• 전기학회논문지
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• 제56권2호
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• pp.349-354
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• 2007

In this work, we investigated etching characteristics of $HfO_2$ thin film and Si using inductive coupled plasma(ICP) system. The ion energy distribution functions in an ICP system was analyzed by quadrupole mass spectrometer(QMS) with an electrostatic ion energy analyzer. The maximum etch rate of $HfO_2$ thin film is 85.5 nm/min at a $BCl_3/(BCl_3+Ar)$ of 20 % and decreased with further addition of $BCl_3$ gas. From the QMS measurements, the most dominant positive ion energy distributions(IEDS) showed a maximum at 20 % of $BCl_3$. These tendency was very similar to the etch characteristics. This result agreed with the universal energy dependency of ion enhanced chemical etching yields. And the maximum selectivity of $HfO_2$ over Si is 3.05 at a $O_2$ addition of 2 sccm into the $BCl_3/(BCl_3+Ar)$ of 20 % plasma.

• 한국결정성장학회지
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• 제8권3호
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• pp.454-462
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• 1998

AUC 침전과정중 AUC 입차를 둥글게 제조하는 조건과 기구를 조사하였다. 둥근 AUC 제조는 교반기를 이용한 내부순환 시는 불가능했으나 펌프를 사용한 외부순환 시는 가능했다. 둥근 AUC 제조속도($dn_p$/dt)는 침전조건인 슬러리 밀도($M_t:U/l)$, 슬러리 회전율($T_o$:turn-over ratio), 임펠러 속도(U:Impelle tip velocity)에 비례하여 관계식을 $ dn_p/dt{\propto}M_t{\cdot}T_o{\cdot}U^2$로 표기할 수 있었으며, 이 속도식은 실험결과와 정성적으로 일치하였다. 그리고 두 개의 둥근 AUC 제조 기구가 제시되었는데, 하나는 균일형성기구이고 다른 하나는 etch-pit 형성기구이다. 전자는 AUC 침전과정에서 초기에 발생되고 후자는 침전과정 말기에 발생되는 것으로 확인되었다.

• 한국전기전자재료학회논문지
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• 제14권2호
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• pp.93-98
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• 2001

YMnO$_3$ films are excellent gate dielectric materials of ferroelectric random access memories (FRAMs) with MFSFET (metal -ferroelectric-semiconductor field effect transistor) structure because YMnO$_3$ films can be deposited directly on Si substrate and have a relatively low permittivity. Although the patterning of YMnO$_3$ thin films is the requisite for the fabrication of FRAMs, the etch mechanism of YMnO$_3$ thin films has not been reported. In this study, YMnO$_3$thin films were etched with Cl$_2$/Ar gas chemistries in inductively coupled plasma (ICP). The maximum etch rate of YMnO$_3$ film is 285$\AA$/min under Cl$_2$/(Cl$_2$+Ar) of 1.0, RF power of 600 W, dc-bias voltage of -200V, chamber pressure of 15 mTorr and substrate temperature of $25^{\circ}C$. The selectivities of YMnO$_3$ over CeO$_2$ and $Y_2$O$_3$ are 2.85, 1.72, respectively. The selectivities of YMnO$_3$ over PR and Pt are quite low. Chemical reaction in surface of the etched YMnO$_3$ thin films was investigated with X-ray photoelectron spectroscopy (XPS) surface of the selected YMnO$_3$ thin films was investigated with X-ray photoelectron spectroscopy(XPS) and secondary ion mass spectrometry (SIMS). The etch profile was also investigated by scaning electron microscopy(SEM)

• 한국진공학회지
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• 제6권1호
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• pp.91-96
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• 1997

평면형 유도 결합 플라즈마의 전기적 특성을 측정하였고 Langmuir probe를 이용하 여 전자의 밀도와 온도를 측정하였다. 코일과 플라즈마를 포함한 총 부하의 저항 성분은 1 에서 4$\Omega$까지 변하였고 인덕턱스는 $1.5\mu$H와 2$\mu$H사이의 값을 가졌다. $10^{11}/\textrm{cm}^3$ 이상의 고밀 도 플라즈마를 발생시켰으며 전자의 온도는 공정 조건에 따라 3에서 5eV까지 변하였다. 산 화막 식각시 선택도를 개선하기 위한 방법으로 바이어스 전압을 변조하는 방법을 모색하였 다. C4F8플라즈마에서 바이어스 변조 방법을 사용하였을 때 선택도는 크게 향상 되었으나 산화막 식각율이 400$\AA$/min 이하였다. 선택도 향상을 위해 수소를 첨가한 실험에서 $C_4F_8$ 플 라즈마에 60% $H_2$를 첨가하였을 때 선택도 50이상, 산화막 식각율 2000$\AA$/min 이상의 결과 를 얻을 수 있었다.

• Restorative Dentistry and Endodontics
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• 제42권3호
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• pp.188-199
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• 2017

Objectives: This in vitro study evaluated the effect of dentin biomodifiers on the immediate and long-term bond strengths of a simplified etch and rinse adhesive to dentin. Materials and Methods: Flat coronal dentin surfaces were prepared in 120 extracted human molars. Teeth were randomly divided into 5 groups (n = 24) according to 5 different surface pre-treatments: No pre-treatment (control); 1M carbodiimide (EDC); 0.1% epigallocatechin-3-gallate (EGCG); 2% minocycline (MI); 10% sodium ascorbate (SA). After surface pre-treatment, adhesive (Adper Single Bond 2 [SB], 3M ESPE) was applied. Composite was applied into transparent plastic tubes (2.5 mm in diameter), which was placed over the bonded dentin surface. From each group, 10 samples were subjected to shear bond strength (SBS) evaluation at 24 hours (immediate) and remaining 10 samples were tested after 6 months (delayed). Additionally, 4 samples per group were subjected to scanning electron microscopic analysis for observation of resin-dentin interface. The data were statistically analysed with Shaperio-Wilk W test, 2-way analysis of variance (ANOVA), and post hoc Tukey's test. Results: At 24 hours, SBS of all surface pre-treatment groups were comparable with the control group, with significant differences found between EDC and SA groups only (p = 0.009). After 6 months storage, EDC, EGCG, and MI pre-treatments preserved the resindentin bond strength with no significant fall. Conclusions: Dentin pre-treatment with all the dentin biomodifiers except SA resulted in significant preservation of resin-dentin bond over 6 months storage period, without negatively affecting the immediate bond strength of the etch and rinse adhesive tested.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2009년도 추계학술대회 논문집
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• pp.67-67
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• 2009

Due to the scaling down of the dielectrics thickness, the leakage currents arising from electron tunneling through the dielectrics has become the major technical barrier. Thus, much works has focused on the development of high k dielectrics in both cases of memories and CMOS fields. Among the high-k materials, $Al_2O_3$ considered as good candidate has been attracting much attentions, which own some good properties as high dielectric constant k value (~9), a high bandgap (~2eV) and elevated crystallization temperature, etc. Due to the easy control of ion energy and flux, low ownership and simple structure of the inductively coupled plasma (ICP), we chose it for high-density plasma in our study. And the $BCl_3$ was included in the gas due to the effective extraction of oxygen in the form of BClxOy compound. In this study, the etch characteristic of ALD deposited $Al_2O_3$ thin film was investigated in $BCl_3/N_2$ plasma. The experiment were performed by comparing etch rates and selectivity of $Al_2O_3$ over $SiO_2$ as functions of the input plasma parameters such as gas mixing ratio, DC-bias voltage and RF power and process pressure. The maximum etch rate was obtained under 15 mTorr process perssure, 700 W RF power, $BCl_3$(6 sccm)/$N_2$(14 sccm) plasma, and the highest etch selectivity was 1.9. We used the x-ray photoelectron spectroscopy (XPS) to investigate the chemical reactions on the etched surface. The Auger electron spectroscopy (AES) was used for elemental analysis of etched surface.

• 한국진공학회지
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• 제7권4호
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• pp.397-402
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• 1998

헬리콘 플라즈마 장치에서 주 입력 전력, 공정 압력을 변수로 산화막 식각 특성을 조사하였다. 산화막 식각 특성은 주 입력 전력이 높을수록, 그리고 공정 압력이 낮을수록 좋 아졌다. $C_4F_8$ 플라즈마에서 주 입력 전력이 300W에서 2000W로 증가함에 따라 실리콘에 대 한 선택비는 2.9에서 25.33로 증가하였으며, 공정압력이 10mTorr에서 1.5mTorr로 감소함에 따라 2.3에서 16.21로 증가하였다. 4극 질량 분석기를 사용하여 플라즈마 내의 라디칼 종 및 이온 종의 상대적 변화 추이를 살펴본 결과, 공정 압력이 낮아지고 입력 전력이 높아질수록 이온 종의 밀도가 라디칼 종의 밀도에 비하여 상대적으로 높아지면서 고선택비 식각이 얻어 지는 것으로 밝혀졌다.

• The Journal of Advanced Prosthodontics
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• 제8권4호
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• pp.251-258
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• 2016

PURPOSE. This study was undertaken to investigate whether use of an adhesive penetration enhancer, dimethyl sulfoxide (DMSO), improves bond stability of fiber posts to root dentin using two two-step etch-and-rinse resin cements. MATERIALS AND METHODS. Forty human maxillary central incisor roots were randomly divided into 4 groups after endodontic treatment and post space preparation, based on the fiber post/cement used with and without DMSO pretreatment. Acid-etched root dentin was treated with 5% DMSO aqueous solution for 60 seconds or with distilled water (control) prior to the application of Excite DSC/Variolink II or One-Step Plus/Duolink for post cementation. After micro-slicing the bonded root dentin, push-out bond strength (P-OBS) test was performed immediately or after 1-year of water storage in each group. Data were analyzed using three-way ANOVA and Student's t-test (${\alpha}$=.05). RESULTS. A significant effect of time, DMSO treatment, and treatment${\times}$time interaction were observed (P<.001). DMSO did not affect immediate bonding of the two cements. Aging significantly reduced P-OBS in control groups (P<.001), while in DMSO-treated groups, no difference in P-OBS was observed after aging (P>.05). CONCLUSION. DMSO-wet bonding might be a beneficial method in preserving the stability of resin-dentin bond strength over time when fiber post is cemented with the tested etch-and-rinse adhesive cements.

• Transactions on Electrical and Electronic Materials
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• 제14권6호
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• pp.304-307
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• 2013

Reverse engineering of semiconductor devices utilizes delayering processes, in order to identify how the interconnection lines are stacked over transistor gates. Cu metal has been used in recent fabrication technologies, and de-processes becomes more difficult with the shrinking device dimensions. In this article, reverse engineering technologies to reveal the Cu interconnection lines and Cu via-plugs embedded in dielectric layers are investigated. Stacked dielectric layers are removed by $CF_4$ plasma etching, then the exposed planar Cu metal lines and via-plugs are selectively delineated by wet chemical solution, instead of the commonly used plasma-based dry etch. As a result, we have been successful in extracting the layouts of multiple layers within a system IC, and this technique can be applicable to other logic IC, analog IC, and CMOS IC, etc.

• 한국정보디스플레이학회:학술대회논문집
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• 한국정보디스플레이학회 2008년도 International Meeting on Information Display
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• pp.1269-1271
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• 2008

We find some array mura are caused by S/D bridge or channel open in 4 mask process. The gray tone PR thickness non-uniformity is the main reason of these defects. By the adjustment of exposure and dry etch parameters, S/D bridge and channel open ratio drops by 10.87%.