• 한국재료학회지
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• 제14권8호
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• pp.573-578
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• 2004

Newly developed silicide materials for ULSI should have the appropriate electrical property of low resistant as well as process compatibility in conventional CMOS process. We prepared $NiCoSi_x$ silicides from 15 nm-Co/15 nm-Ni/Si structure and performed contact dry etch process to confirm the dry etch stability and compatibility of $NiCoSi_x$ layers. We dry etched the photoresist/SiO/silicide/silicon patterns with $CF_4\;and\;CHF_3$ gases with varying powers from 100 to 200 W, and pressures from 45 to 65 mTorr, respectively. Polysilicon and silicon active layers without silicide were etched $0\sim316{\AA}$ during over etch time of 3min, while silicon layers with proposed $NiCoSi_x$ silicide were not etched and showed stable surfaces. Our result implies that new $NiCoSi_x$ silicides may replace the conventional silicides due to contact etch process compatibility.

• 한국진공학회지
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• 제8권4B호
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• pp.565-571
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• 1999

In this study, high-density plasma etching characteristics of ITO(indium tin oxide) films used for transparent electrode in dispaly devices were investigated. Plasma diagnostic and surface analysis tools were used to understand etch reaction mechanism. The etch rate of ITO was increased by the increase of reactive radicals such as H and $CH_3$ with the addition of moderate amount of $CH_4$ to Ar. However, the addition of excess amount of $CH_4$ decreased possibly due to the increased polymer formation on the ITO surface being etched. The increase of source power and bias boltage increased ITO etch rates but it decreased selectivities over under-layers $(SiO_2, Si_3N_4)$. The increase of working pressure up to 20mTorr also increased ITO etch rates, however the further increased of the pressure decreased ITO etch rates. From the analysis of XPS, a peak related to the polymer of hydrocarbon was observed on the etched ITO surface especially for high $CH_4$ conditions and it appears to affect ITO etch rates.

• 한국표면공학회:학술대회논문집
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• 한국표면공학회 1999년도 추계학술발표회 초록집
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• pp.49-49
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• 1999

In this study, $Cl_2/BCI_3$ magnetized inductively coupled plasmas (MICP) were used to etch GaN and the effects of magnetic confinements of inductively coupled plasmas on the GaN etch characteristics were investigated as a function of $Cl_2/BCI_3$. Also, the effects of Kr addition to the magnetized $Cl_2/BCI_3$ plasmas on the GaN etch rates were investigated. The characteristics of the plasmas were estimated using a Langmuir probe and quadrupole ma~s spectrometry (QMS). Etched GaN profiles were observed using scanning electron microscopy (SEM). The small addition of $Cl_2/BCI_3$ (10-20%) in $Cl_2$ increased GaN etch rates for both with and without the magnetic confinements. The application of magnetic confinements to the $Cl_2/BCI_3$ inductively coupled plasmas (ICP) increased GaN etch rates and changed the $Cl_2/BCI_3$ gas composition of the peak GaN etch rate from 10% $BCI_3$ to 20% $BCI_3$. It also increased the etch selectivity over photoresist, while slightly reducing the selectivity over $Si0_2$. The application of the magnetic field significantly increased positive $BCI_2{\;}^+$ measured by QMS and total ion saturation current measured by the Langmuir probe. Other species such as CI, BCI, and CI+ were increased while species such as $BCl_2$ and $BCI_3$ were decreased with the application of the magnetic field. Therefore, it appears that the increase of GaN etch rate in our experiment is related to the increased dissociative ionization of $BCI_3$ by the application of the magnetic field. The addition of 10% Kr in an optimized $Cl_2/BCI_3$ condition (80% $Cl_2/$ 20% $BCI_3$) with the magnets increased the GaN etch rate about 60%. More anisotropic GaN etch profile was obtained with the application of the magnetic field and a vertical GaN etch profile could be obtained with the addition of 10% Kr in an optimized $Cl_2/BCI_3$ condition with the magnets.

• 전자공학회논문지A
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• 제29A권1호
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• pp.33-40
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• 1992

4인치(100) 실리콘 기판상에 센서용 다이아프램을 제조할 때 생기는 식각 현상들을 관찰하고 분석하였다. 115$^{\circ}C$의 "F etch' 용액을 사용하여 300$\mu$ 이상의 깊은 식각을 행하였을 때 식각 표면에 발생하느 식각 결함은 hillock, 반응 생성물, 그리고 횐색 잔유물로 구분될 수 있었따. 특히 hillock의 경우 식각 표면에 부착된 반응 생성물의 밀도나 크기에 관계하여 |111|면들로 이루어질는 피라밋 구조나 사다리꼴 육면체등의 형태를 취함이 확인되었다. 또한 용해된 실리콘의 국부적인 과잉 포활 발생하는 흰색 잔유물의 IR 흡수 스펙트럼을 조사한 결과, Si-N-O 성분에 미량의 h와 C가 포함된 것임을 알 수 있었다. 아울러 식각면을 식각용액에 대해 아래쪽, 위쪽, 그리고 측면을 향하도록 놓았을때 식각 결함의 존재 확률과 분포 그리고 식각율의 분포를 비교한 결과 식각율의 균일성면에서는 하측방향의 자세가, 식각결함의 제거에 있어서는 측면방향의 자세가, 식각결함의 제거에 있어서는 측면방향의 자세가 유리하게 나타났으며 이를 반응조내의 흐름 패턴을 이용하여 해석하였다.

• Korean Chemical Engineering Research
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• 제44권5호
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• pp.498-504
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• 2006

고밀도 $CHF_3$ 플라즈마를 이용한 식각에서 photoresist(PR)의 식각속도 및 $SiO_2$의 PR에 대한 식각 선택도가 이온의 입사 각도에 따라 변화하는 특성을 관찰하였다. 플라즈마 내에 파라데이 상자를 설치하여 이온의 입사 각도를 조절하였으며, 바이어스 전압을 변화시켜 이온의 입사 에너지를 조절하였다. 대부분의 바이어스 전압에서 $SiO_2$의 식각속도는 이온입사각도가 증가함에 따라 단조 감소함에 비해 PR의 식각속도는 중간각도 영역까지 일정하다가 그 이후에 감소하기 시작하였다. 이온입사각도가 $0^{\circ}$인 조건에서의 식각속도를 기준으로 정규화된 식각속도(NER)는 $SiO_2$의 경우 cosine함수와 거의 일치하였으나 PR의 경우 중간각도영역에서 over-cosine 형태를 보였다. PR에 대한 $SiO_2$의 식각선택도는 이온입사각도에 따라 점차로 감소하였는데, 이는 PR이 $SiO_2$에 비해 중간각도에서 물리적 스퍼터링에 의해 식각 수율이 크게 증가하였기 때문이다. 또한, 바이어스 전압의 증가에 따라 PR에 대한 식각선택도는 대부분의 이온입사각도에서 감소하였다.

• 한국결정성장학회지
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• 제21권4호
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• pp.164-168
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• 2011

고이온밀도 플라즈마 식각에 의한 고종횡비, 고이방성을 갖는 ZnO, $SnO_2$ 나노 구조 가스 감응층 형성을 위하여 mask 재료들과의 식각 선택도를 조사하였다. $25BCl_3$/10Ar ICP 플라즈마에서는 ZnO와 Ni 간 5.1~6.1 범위의 식각 선택도가 확보된 반면에 Al의 경우 효율적인 식각 선택도를 확보할 수 없었다. $25CF_4$/10Ar ICP 플라즈마에서는 ZnO와 Ni 간에 7~17 범위의 높은 식각 선택도를 얻을 수 있었다. $SnO_2$는 $SnF_x$ 식각 생성물의 높은 휘발성에 기인하여 Ni에 비해 매우 높은 식각 속도를 나타내었고, 최고치 약 67의 매우 높은 식각 선택도를 확보하였다.

• JSTS:Journal of Semiconductor Technology and Science
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• 제8권3호
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• pp.244-250
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• 2008

An inductively coupled plasma etching process to replace an existing slower rate reactive ion etching process for $60{\mu}m$ diameter via-holes using Cl2/BCl3 gases has been investigated. Process pressure and platen power were varied at a constant ICP coil power to reproduce the RIE etched $200{\mu}m$ deep via profile, at high etch rate. Desired etch profile was obtained at 40 m Torr pressure, 950 W coil power, 90W platen power with an etch rate ${\sim}4{\mu}m$/min and via etch yield >90% over a 3-inch wafer, using $24{\mu}m$ thick photoresist mask. The etch uniformity and reproducibility obtained for the process were better than 4%. The metallized via-hole dc resistance measured was ${\sim}0.5{\Omega}$ and via inductance value measured was $\sim$83 pH.

• 한국진공학회지
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• 제6권3호
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• pp.267-274
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• 1997

고밀도 유도결합 $Cl_2$ 및 HBr/$Cl_2$ 플라즈마를 이용하여 차세대 반도체 집적회로에 사용가능한 STI(Shallow Trench Isolation)구조에서 trench 식각시 trench etch profile 및 격자손상에 영향을 미치는 공정변수의 효과에 대하여 연구하였다. 식각결과 $Cl_2$만을 사용한 경우에는 trench 식각공정 동안 화학적 측면식각의 증가로 인하여 등방성 식각이 얻어지고 이는 유도입력 전력이 증가하고 바이어스 전압이 감소함에 따라 이의 경향이 증가하였다. 측면식각의 정도는 $Cl_2$에 $N_2$ 및 $O_2$의 첨가에 따라 감소하였다. 순수 HBr을 사용한 경우에 있어서는 Br 라디칼이 Cl 라디칼에 비하여 자발적인 실리콘 식각의 민감도가 감소하여 positive angle의 식각형상이 얻어졌으며 HBr내에 $Cl_2$의 증가에 따라 이방성 식각이 얻어졌 다. 물리적인 격자손상을 투과전자현미경으로 관찰한 결과 <$Cl_2/N_2$및 HBr을 함유한 식각가 스를 사용한 경우에 trench표면에서 결함이 관찰되었다.

• ETRI Journal
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• 제30권3호
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• pp.383-393
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• 2008

The etching mechanism of $ZrO_2$ thin films and etch selectivity over some materials in both $BCl_3$/Ar and $BCl_3/CHF_3$/Ar plasmas are investigated using a combination of experimental and modeling methods. To obtain the data on plasma composition and fluxes of active species, global (0-dimensional) plasma models are developed with Langmuir probe diagnostics data. In $BCl_3$/Ar plasma, changes in gas mixing ratio result in non-linear changes of both densities and fluxes for Cl, $BCl_2$, and ${BCl_2}^+$. In this work, it is shown that the non-monotonic behavior of the $ZrO_2$ etch rate as a function of the $BCl_3$/Ar mixing ratio could be related to the ion-assisted etch mechanism and the ion-flux-limited etch regime. The addition of up to 33% $CHF_3$ to the $BCl_3$-rich $BCl_3$Ar plasma does not influence the $ZrO_2$ etch rate, but it non-monotonically changes the etch rates of both Si and $SiO_2$. The last effect can probably be associated with the corresponding behavior of the F atom density.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2001년도 추계학술대회 논문집 Vol.14 No.1
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• pp.181-184
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• 2001

Chemical Mechanical Polishing(CMP) of Shallow Trench Isolation(STD structure in 0.18 m semiconductor device fabrication is studied. CMP process is applied for the STI structure with and without reverse moat pattern and End Point Detection (EPD) method is tested. To optimize the transistor properties related metal 1 parameters. we studied the correlation between CMP thickness of STI using high selectivity slurry. DOE of gate etch recipe, and 1st metal DC values. Remaining thickness of STI CMP is proportional to the thickness of gate-etch process and this can affect to gate profile. As CMP thickness increased. the N-poly foot is deteriorated. and the P-Poly Noth is getting better. If CD (Critical Dimension) value is fixed at some point,, all IDSN/P values are in inverse proportional to CMP thickness by reason of so called Profile Effect. Weve found out this phenomenon in all around DOE conditions of Gate etch process and we also could understand that it would not have any correlation effects between VT and CMP thickness in the range of POE 120 sec conditions. As CMP thickness increased by $100\AA$. 3.2 $u\AA$ of IDSN is getting better in base 1 condition. In POE 50% condition. 1.7 $u\AA$ is improved. and 0.7 $u\AA$ is improved in step 2 condition. Wed like to set the control target of CD (critical dimension) in gate etch process which can affect Idsat, VT property versus STI topology decided by CMP thickness. We also would like to decide optimized thickness target of STI CMP throughout property comparison between conventional STI CMP with reverse moat process and newly introduced STI CMP using high selectivity slurry. And we studied the process conditions to reduce Gate Profile Skew of which source known as STI topology by evaluation of gate etch recipe versus STI CMP thickness.