• Title/Summary/Keyword: output impedance

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Design of Lowpass Filter With the Wide Stopband Characteristics Using Microstrip Line (마이크로스트립 선로를 이용한 광대역 차단특성을 가지는 저역통과 필터 설계)

  • Choi Dong-Muk;Shim Joon-Hwan;Jeon Joongn-Sung;Kim Dong-Il
    • Journal of Navigation and Port Research
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    • v.30 no.5 s.111
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    • pp.331-334
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    • 2006
  • In this paper, we designed and fabricated the lowpass filter with the wide stopband characteristics using microp- strip line. Adding the $\lambda_g/4$ open stub at the input and output ports, we developed the L-C ladder type lowpass filter using the open stub which has wide stopband characteristics. In order to reduce the entire size qf this filter, the high impedance microstrip lines were made with the meander structure. The lowpass filter was fabricated with the cutoff frequency 2.3 GHz and its measured frequency responses agree well with the simulation results.

The effects of the shape of IDT electrode pair on the characteristics of SFIT filter (IDT형의 전극 형태가 SFIT형 필터의 특성에 미치는 영향)

  • You, Il-Hyun
    • Journal of the Korea Institute of Information and Communication Engineering
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    • v.13 no.12
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    • pp.2662-2670
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    • 2009
  • The effect of the reflector type for the SAW filter on the characteristics of the slanted finger IDT filter have been studied by computer simulation. The IDT was evaporated by Aluminum-Copper alloy. The design condition was optimized by the phase shift of the SAWfilter for WCDMA. We have employed that the number of pairs of the input and output IDT are 50 pairs and the thickness are $5,000{\AA}$, and the width and the space of reflector are $3.6{\mu}m$ and $2.0{\mu}m$, respectively. Frequency response of the fabricated SFIT filter has the property that the center frequency is about 190MHz and bandwidth at the 3dB is probably 8.2MHz. And we could obtain that the return loss is less then 16dB, the ripple characteristics is probably 4dB and the triple transit echo is less then 18dB after when we have matched impedance.

Robust Tracking and Human-Compliance Control Using Integral SMC and DOB (적분슬라이딩모드와 DOB를 이용한 강인추종 및 인간순응 로봇제어)

  • Asignacion Jr., Abner;Kim, Min-chan;Kwak, Gun-Pyong;Park, Seung-kyu
    • Journal of the Korea Institute of Information and Communication Engineering
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    • v.21 no.2
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    • pp.416-422
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    • 2017
  • The robot control with safety consideration is required since robots and human work together in the same space more frequently in these days. For safety, robots must have compliance to human force and robust tracking performance with high impednace for the nonhuman disturbances. The novel idea is proposed to achieve the compliance and high impedance with one controller structure. For the compliance, the ISMC(Integral Sliding Mode Control) and HDOB(Human Disturbance Observer) The human force is identified by using the human band pass filter and its output is sent to the sliding surface. The sliding mode dynamic is affected by human disturbance and the compliance for human is achieved. The disturbances besides human frequencies are decoupled by the ISMC and the robust tracking is achieved. The additional LDOB(Low Frequency Disturbance Observer) decreases the maxim nonlinear gain and leads low chattering. The introduction of human disturbance into the sliding mode dynamic is the main novel idea of this paper.

A new continuous-time current-mode integrator for realization of low-voltage current-mode CMOS filter (저전압 전류모드 CMOS 필터 구현을 위한 새로운 연속시간 전류모드 적분기)

  • 방준호;조성익;김동용
    • The Journal of Korean Institute of Communications and Information Sciences
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    • v.21 no.4
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    • pp.1068-1076
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    • 1996
  • In this paper, a new continuous-time current-mode integrator as basic building block of the low-voltage analyog current-mode active filters is proposed. Compared to the current-mode integrator which is proposed by Zele, the proposed current-mode integrator had higher unity gain frequency and output impedance in addition to lower power dissipation. And also, a current-mode third-order lowpass active filter is designed with the proposed current-mode integrator. The designed circuits are fabricated using the ORBIT's $1.2{\mu}{\textrm{m}}$ deouble-poly double-metal CMOS n-well process. The experimental results show that the filter has -3dB cutoff frequency at 44.5MHz and 3mW power dissipation with single 3.3V power supply and also $0.12mm^{2}$ chip area.

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A Resonant-type Step-up DC/DC Converters with Piezoelectric Transducer (압전 트랜스듀서를 이용한 승압형 공진형 직류-직류 컨버터)

  • Park, Joung-Hu;Seo, Gab-Su;Cho, Bo-Hyung;Yi, Kyung-Pyo
    • The Transactions of the Korean Institute of Power Electronics
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    • v.14 no.5
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    • pp.343-354
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    • 2009
  • In this paper, a magnetic-less dc-dc switching converter realizing an integrable power conversion system is described. Instead of magnetic devices, the inductive impedance range of piezoelectric transducers is utilized to store and resonate the energy for soft-switching. Piezoelectric devices have no windings and deliver the power by the electrodes, which lead to mass product through semiconductor-manufacturing process. This paper presents a resonant-type step-up dc-dc power converter employing a disk-type piezoelectric transducer, analyzing the operation principles and the frequency control characteristics. Also, a topology extension of the single stage converter into cascaded multi-stage is presented and analyzed with the operation principles and control characteristics. For verification of the analysis, a 10W output dc-dc power converter hardware was implemented. The hardware experiments shows a good frequency control and power efficiency greater than 96% in the single stage. A hardware prototype of the extended multi-stage one was also realized and tested. The results shows that the converter has the same frequency control performance and high efficiency such as 93%.

Dual-Band Unequal Power Divider based on CRLH Transmission Line (CRLH 전송선로를 기반으로 한 이중대역 비대칭 전력 분배기)

  • Yoo, Jae-Hyun;Kim, Young;Yoon, Young-Chul
    • Journal of Advanced Navigation Technology
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    • v.14 no.6
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    • pp.909-915
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    • 2010
  • In this paper, the unequal power divider based on CRLH (Composite Right/Left-Handed) transmission line with dual-band characteristic is proposed. They consist of dual-band branch line hybrid coupler, the connection between input and isolation port of hybrid coupler and ${\lambda}/4$ impedance transformer. When the transmission line between input and isolation port of hybrid coupler is asymmetrical connected, the divider is obtained the output results of the equal phase and unequal power dividing ratio. The simulation results of the divider represent the power ratio of 0 dB ~ 20 dB. To validate a function of divider, the hybrid coupler and transformer with 880 MHz and 1850 MHz is implemented. As a result, the proposed unequal divider obtains the power ratio of 3.2 dB ~ 8.8 dB at 880 MHz and 2.5 dB ~ 14.0 dB at 1850 MHz.

Design of W-band Cascode Mixer with High Conversion Gain using 0.1-μm GaAs pHEMT Process (0.1-μm GaAs pHEMT 공정을 이용한 높은 변환이득을 가지는 W-대역 캐스코드 혼합기 설계)

  • Choe, Wonseok;Kim, HyeongJin;Kim, Wansik;Kim, Jongpil;Jeong, Jinho
    • The Journal of the Institute of Internet, Broadcasting and Communication
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    • v.18 no.6
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    • pp.127-132
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    • 2018
  • In this paper, a high conversion gain cascode mixer was designed in W-band and verified by the fabrication and measurements. In the high frequency band such as a W-band, the conversion loss of a mixer is increased because of the poor performance of transistors. This high conversion loss of the mixer requires additional circuits which can give an extra gain such as an RF buffer amplifier, and this can affects the linearity and stability of the overall systems. Therefore, it is necessary to maximize the conversion gain of the mixer. To maximize the conversion gain of the mixer, biases of the transistor were optimized, and output load impedance was optimized by the load-pull simulations. The designed mixer was fabricated in $0.1-{\mu}m$ GaAs pHEMT technology and verified by the measurements. The measurement results shows a maximum conversion gain of -4.7 dB at W-band and an input 1-dB compression point of 2.5 dBm.

Design and Fabrication of an Electronic Voltage Transformer (EVT) Embedded in a Spacer of Gas Insulated Switchgears (가스절연개폐장치의 스페이서 내장형 전자식 변압기의 설계 및 제작)

  • Lim, Seung-Hyun;Kim, Nam-Hoon;Kim, Dong-Eon;Kim, Seon-Gyu;Kil, Gyung-Suk
    • Journal of the Korean Institute of Electrical and Electronic Material Engineers
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    • v.35 no.4
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    • pp.353-358
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    • 2022
  • Bulky iron-core potential transformers (PT) are installed in a tank of gas insulated switchgears (GIS) for a system voltage measurement in power substations. In this paper, we studied an electronic voltage transformer (EVT) embedded in a spacer for miniaturization, eco-friendliness, and performance improvement of GIS. The prototype EVT consists of a capacitive probe (CP) that can be embedded in a spacer and a voltage Follower with a high input and a low output impedance. The CP was fabricated in the form of a Flexible-PCB to acquire the insulation performance and to withstand vibration and shock during operation. Voltage ratio of the prototype EVT is about 42,270, and the frequency bandwidth of -3 dB ranges from 0.33 Hz to 3.9 MHz. The voltage ratio error evaluated at about 6%, 12% and 18% of the rated voltage of 170 kV was 0.32%, and the phase error was 12.9 minutes. These results were within the accuracy for the class 0.5 specified in IEC 60044-7 and satisfy even in ranges from 80% to 120% of the rated voltage. If the prototype EVT replaces the conventional iron-core potential transformer, it is expected that the height of the GIS could be reduced by 11% and the amount of SF6 will be reduced by at least 10%.

Hot Firing Test of a Quadrature NEA SSD9103S1 Configuration

  • Ja-Chun, Koo;Hee-Sung, Park;Max, Guba
    • International Journal of Aerospace System Engineering
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    • v.9 no.2
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    • pp.1-9
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    • 2022
  • The NEA release mechanism is used to provide restraint and release functions with low shock for critical deployment operations on solar arrays after launch. The GK3 solar array consists of 2 wings and 6 hold down points per panel. The NEA SSD9103S1 is a part of the GK3 solar array hold-down and release mechanism. Each NEA unit is equipped with two Z-diodes which provide power to a NEA unit connected in series after actuation of the fuse wire. This paper presents the hot firing test results of a quadrature NEA SSD9103S1 configuration. One output powers a maximum of 4 NEA SSD9103S1 units simultaneously. The necessary actuation pulse duration has been determined to meet margin requirement for thermal energy of minimum 4. Actuation thermal energy difference is about 6.6% between each half of two fired serial NEAs. Thermal energy margin at worst case is minimum 5.9 in case of an actuation pulse duration of 500 ms. Two series Zener impedance depend on current applied has been characterized by an additional actuation after all fuse wires are open circuit. Total number of actuation commands to the GK3 NEA unit reduce drastically from 24 in case of single NEA configuration down to 8 in case of parallel and quadrature NEA configurations. It can be accommodated by the existing HP2U Pyro design without any impact.

A Study on Bond Wire Fusing Analysis of GaN Amplifier and Selection of Current Capacity Considering Transient Current (GaN증폭기의 본드 와이어 용융단선 현상분석과 과도전류를 고려한 전류용량 선정에 대한 연구)

  • Woo-Sung, Yoo;Yeon-Su, Seok;Kyu-Hyeok, Hwang;Ki-Jun, Kim
    • Journal of IKEEE
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    • v.26 no.4
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    • pp.537-544
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    • 2022
  • This paper analyzes the occurrence and cause of bond wires fusing used in the manufacture of pulsed high power amplifiers. Recently GaN HEMT has been spotlight in the fields of electronic warfare, radar, base station and satellite communication. In order to produce the maximum output power, which is the main performance of the high-power amplifier, optimal impedance matching is required. And the material, diameter and number of bond wires must be determined in consideration of not only the rated current but also the heat generated by the transient current. In particular, it was confirmed that compound semiconductor with a wide energy band gap such as GaN trigger fusing of the bond wire due to an increase in thermal resistance when the design efficiency is low or the heat dissipation is insufficient. This data has been simulated for exothermic conditions, and it is expected to be used as a reference for applications using GaN devices as verified through IR microscope.