• Journal of Industrial and Engineering Chemistry
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• v.68
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• pp.209-219
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• 2018

Colloidally stable organic-inorganic (O-I) hybrid nanoparticles could be prepared using an alkoxysilanefunctionalized amphiphilic polymer (AFAP) precursor. O-I hybrid sols could maintain colloidal stability for six months even at 45% solid content and be coated onto glass as well as PET film to form transparent O-I hybrid films. The formation of O-I hybrid nanoparticles dispersed in cured coating films could be confirmed using scanning electron microscopy. The cured coating film showed 3H and 5H pencil hardness on PET and glass, respectively. Nanoindentation measurements also showed that their modulus and hardness was varied with the type of AFAP used in its preparation.

• Journal of Adhesion and Interface
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• v.20 no.4
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• pp.146-154
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• 2019

In this study, alkoxysilane-functionalized amphiphilic polymer (AFAP), which have hydrophilic segment and hydrophobic segment functionalized by alkoxysilane group at the same backbone, was synthesized and used as a dispersant and control agent for reaction rate in the preparation of colloidally stable organic-inorganic (O-I) hybrid sols. After reaction with fluorosilane compounds, fluorinated O-I hybrid sols were prepared and coated onto glass substrate to form hydrophobic O-I hybrid coating films through low-temperature curing process. Surface hardness and hydrophobicity of cured coating films were varied with type of solvent and composition of AFAP and fluorinated alkoxysilane compounds. At appropriate solvent and composition of fluorinated alkoxysilane compounds, O-I hybrid coating film having high transparency and surface hardness could be prepared, which could be applicable to cover window of solar cell and displays.

• Proceedings of the Materials Research Society of Korea Conference
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• 2003.11a
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• pp.132-132
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• 2003

Second-order nonlinear optical(NLO) materials have been extensively studied for applications in photonic devices, such as frequency doubling and electro-optical(EO) modulation, because of their large optical nonlinearity, excellent processibility, low dielectric constant, and high laser damage thresholds. The poling behaviour of NLO chromophore in organic/inorganic matrixes showed the randomization of poled NLO chromophore in the absence of poling Held. The liquid crystal molecules in a droplet showed a long-range orientational order along a director. Therefore, liquid crystal effects on poling behaviour of NLO chromophore dispersed in organically modified inorganic sol-gel materials were investigated. Using sol-gel process for the development of NLO material has received increasing attention, Organically modifked inorganic NLO sol-Eel materials are obtained via incorporation of the organic NLO active chromophore into an alkoxysilane based inorganic network. One of the most important thing in this works was that tetraethoxysilane(TEOS) and methyltrimathoxysilane(HTMS) were used as precursor followed by hydrolysis and condensation without using any acidic catalyst during the process. The NLO chromophores in the liquid crystal nanodomains were well mixed with I/O hybrid matrix, deposited on transparent ITO-coated glasses. The poling behaviour of liquid crystal effects of NLO chromophore dispersed in I/O hybrid matrix were investigated by UV-vis spectroscopy. Size distribution and morphology of the NLO chromophores doped in the liquid crystal nanodomains dispersed in I/O hybrid matrix were investigated by SEM.

• Journal of the Microelectronics and Packaging Society
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• v.16 no.4
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• pp.17-22
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• 2009

Two different organic-inorganic hybrid thin film transistors (OITFTs) with the structures of glass/ITO/ZnO/PMMA/Al (staggered structure) and glass/ITO/PMMA/ZnO/Al (inverted staggered structure), were fabricated and their electrical and structural properties were compared. The ZnO thin films used as active channel layers were deposited by the atomic layer deposition (ALD) method at a temperature of $100^{\circ}C$. To investigate the effect of the substrates on their properties, the ZnO films were deposited on bare glass, PMMA/glass and ITO/glass substrates and their crystal properties and surface morphologies were analyzed. The structural properties of the ZnO films varied with the substrate conditions. The ZnO film deposited on the ITO/glass substrate showed better crystallinity and morphologies, such as a higher preferred c-axis orientation, lower FWHM value and larger particle size compared with the one deposited on the PMMA/glass substrate. The field effect mobility ($\mu$), threshold voltage ($V_T$) and $I_{on/off}$ switching ratio for the OITFT with the staggered structure were about $0.61\;cm^2/V{\cdot}s$, 5.5 V and $10^2$, whereas those of the OITFT with the inverted staggered structure were found to be $0.31\;cm^2/V{\cdot}s$, 6.8 V and 10, respectively. The improved electrical properties for the staggered OITFTs may originate from the improved crystal properties and larger particle size of the ZnO active layer.

• Journal of the Microelectronics and Packaging Society
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• v.25 no.4
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• pp.1-7
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• 2018

As the performance and density of IC (integrated circuit) devices increase, power and signal integrities in the global interconnects of advanced packaging technologies are becoming more difficult. Thus, the global interconnect technologies should be designed to accommodate increased input/output (I/O) counts, improved power grid network integrity, reduced RC delay, and improved electrical crosstalk stability. This requirement resulted in the fine-pitch interconnects with a low-k dielectric in 3D packaging or wafer level packaging structure. This paper reviews an organic-inorganic hybrid material as a potential dielectric candidate for the global interconnects. An organic-inorganic hybrid material called polysiloxane can provide spin process without high temperature curing, an excellent dielectric constant, and good mechanical properties.

• Journal of the Korean Magnetics Society
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• v.22 no.5
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• pp.162-166
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• 2012

V-I characteristics of Fe(100)/MgO(100)/Cu-phthalocyanine (CuPc)/Co hybrid magnetic tunnel junctions were investigated at different temperatures. Fe(100) and Co ferromagnetic layers were separated by an organic-inorganic hybrid barrier consisting of different thickness of CuPc thin film grown on a 2 nm thick epitaxial MgO(100) layer. As the CuPc thickness increases from 0 to 10 nm, a bistable switching behavior due to strong charging effects was observed, while a very large magenetoresistance was shown at 77 K for the junctions without the CuPc barrier. This switching behavior decreases with the increase in temperature, and finally disappears beyond 240 K. In this work, high-potential future applications of the MgO(100)/CuPc bilayer were discussed for hybrid spintronic devices as well as polymer random access memories (PoRAMs).

• Journal of Adhesion and Interface
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• v.21 no.4
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• pp.143-155
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• 2020

Hydrophobic Organic-Inorganic (O-I) hybrid materials prepared by sol-gel process have been widely used at functional coating fields such as coatings for anti-corrosion, anti-icing, self-cleaning, anti-reflection. The key point for fabricating hydrophobic surface is to optimize the surface energy and roughness of the coating films. There are typical processes to control the surface energy and roughness which are 'In situ fabricating', 'Pre-fluorinating/Post-roughening', 'Pre-roughening/ Post-fluorinating'. In this study, particle-binder process was used for in-situ fabrication of hydrophobic coating films. Various O-I hybrid compounds prepared using several kinds of alkoxysilane compounds were used as a binder for silica nanoparticles at particle-binder process. To study effect of fluorine content and weight ratio of particle : binder on the hydrophobicity and surface morphology, Hydrophobic coating films were prepared onto glass substrate at various content of fluorine content of O-I hybrid binder and weight ratio of particle : binder. The coating films prepared using O-I hybrid binder (GPTi-HF10) having 10 wt% of fluorine content showed the highes water contact angle (107.52±1.6°). The coating films prepared at 1:3 weight ratio of GPTi-HF10 : silica nanoparticle exhibited the highest water contact angle (130.84±1.99°).

• Proceedings of the Korean Vacuum Society Conference
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• 2010.02a
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• pp.257-257
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• 2010

One of the critical issues for applications of flexible organic thin film transistors (OTFTs) for flexible electronic systems is the electrical stabilities of the OTFT devices, including variation of the current on/off ratio ($I_{on}/I_{off}$), leakage current, threshold voltage, and hysteresis, under repetitive mechanical deformation. In particular, repetitive mechanical deformation accelerates the degradation of device performance at the ambient environment. In this work, electrical stabilities of the pentacene organic thin film transistors (OTFTs) employing multi-stack hybrid encapsulation layers were investigated under mechanical cyclic bending. Flexible bottom-gated pentacene-based OTFTs fabricated on flexible polyimide substrate with poly-4-vinyl phenol (PVP) dielectric as a gate dielectric were encapsulated by the plasma-deposited organic layer and atomic layer deposited inorganic layer. For cyclic bending experiment of flexible OTFTs, the devices were cyclically bent up to $10^5$ times with 5mm bending radius. In the most of the devices after $10^5$ times of bending cycles, the off-current of the OTFT with no encapsulation layers was quickly increased due to increases in the conductivity of the pentacene caused by doping effects from $O_2$ and $H_2O$ in the atmosphere, which leads to decrease in the $I_{on}/I_{off}$ and increase in the hysteresis. With encapsulation layers, however, the electrical stabilities of the OTFTs were improved significantly. In particular, the OTFTs with multi-stack hybrid encapsulation layer showed the best electrical stabilities up to the bending cycles of $10^5$ times compared to the devices with single organic encapsulation layer. Changes in electrical properties of cyclically bent OTFTs with encapsulation layers will be discussed in detail.

• Journal of Adhesion and Interface
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• v.18 no.1
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• pp.13-24
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• 2017

In this study, nanoparticles which encapsulated hydrophobic antimicrobial compounds with 50wt% of payload and 70%of solid content were prepared. These nanoparticles could be dispersed at water as well as various medium. Water dispersible organic-inorganic (O-I) hybrid nanoparticles were first prepared using alkoxysilane-functionalized amphiphilic polymer precursors through a conventional sol-gel process. Hydrophobic antimicrobial compound, Eugenol encapsulated nanoparticles were prepared using these O-I hybrid nanoparticles through a new nanoprecipitation process. The effect of various preparation on the size of nanoparticles, amount of payload, antimicrobial activity, and release rate of encapsulated compounds was investigated. All eugenol-encapsulated O-I nanoparticles regardless of preparation condition showed the same minimal inhibitory concentration (MIC) (50mg/ml) and 99% of antimicrobial activity for every strain. Their antimicrobial activity could maintain longer than two weeks. Especially, eugenol-encapsulated O-I nanoparticles prepared using tetraethoxysilane (TEOS) exhibited the highest payload (50wt%) and the lowest release rate which was owing to higher inorganic content in the O-I nanoparticles. And these O-I nanoparticles dispersed in hexanediol (HD) showed the highest antimicrobial activity and solid content (70wt%) because HD acted as a solvent as well as a antimicrobial agent.

• Proceedings of the Korean Vacuum Society Conference
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• 2012.02a
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• pp.341-341
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• 2012

Recently, oxide semi-conductor materials have been investigated as promising candidates replacing a-Si:H and poly-Si semiconductor because they have some advantages of a room-temperature process, low-cost, high performance and various applications in flexible and transparent electronics. Particularly, amorphous indium-gallium-zinc-oxide (a-IGZO) is an interesting semiconductor material for use in flexible thin film transistor (TFT) fabrication due to the high carrier mobility and low deposition temperatures. In this work, we demonstrated improvement of flexibility in IGZO TFTs, which were fabricated on polyimide (PI) substrate. At first, a thin poly-4vinyl phenol (PVP) layer was spin coated on PI substrate for making a smooth surface up to 0.3 nm, which was required to form high quality active layer. Then, Ni gate electrode of 100 nm was deposited on the bare PVP layer by e-beam evaporator using a shadow mask. The PVP and $Al_2O_3$ layers with different thicknesses were used for organic/inorganic multi gate dielectric, which were formed by spin coater and atomic layer deposition (ALD), respectively, at $200^{\circ}C$. 70 nm IGZO semiconductor layer and 70 nm Al source/drain electrodes were respectively deposited by RF magnetron sputter and thermal evaporator using shadow masks. Then, IGZO layer was annealed on a hotplate at $200^{\circ}C$ for 1 hour. Standard electrical characteristics of transistors were measured by a semiconductor parameter analyzer at room temperature in the dark and performance of devices then was also evaluated under static and dynamic mechanical deformation. The IGZO TFTs incorporating hybrid gate dielectrics showed a high flexibility compared to the device with single structural gate dielectrics. The effects of mechanical deformation on the TFT characteristics will be discussed in detail.