• 한국정보디스플레이학회:학술대회논문집
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• 2008.10a
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• pp.979-982
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• 2008

We studied hybrid passivation using parylene-C, metal, photoacyl and indium zinc oxide for pentacene OTFT to assure stability in subthreshold region. After the passivation, the changes in S and $V_{on}$ of OTFT were negligible and $I_{off}$ maintained its initial value of ${\sim}10^{-12}$ A. Therefore, the hybrid passivation is suitable for practical applications based on OTFT.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2007.06a
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• pp.230-231
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• 2007

we fabricated a pentacene thin-film transistor with an $Al_2O_3$ layer of ALD as a gate insulator and obtained a device with better electrical characteristics at low operating voltages (below 16V). This device was found to have a field-effect mobility of $0.03cm^2/Vs$, a threshold voltage of -6V, an subthreshold slope of 1 V/decade, and an on/off current ratio of $10^6$.

• Proceedings of the KIEE Conference
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• 2009.07a
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• pp.1353_1354
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• 2009

The OTFT devices had inverted staggered structures of Au/pentacene/ppMMA/ITO on PET substrate. The overall device performances of the flexible devices such as the operating voltage, the field effect mobility, the on/off ratio and the off current are somewhat worse than those of devices fabricated on glass substrates. Pentacene/ppMMA OTFT benchmarks (mobility, sub-threshold slope, on/off ratio) were comparable to that of solution cast PMMA, but below average when compared to other polymer gate dielectrics. However, threshold and drive voltages were among the lowest reported for a polymer gate dielectric, and surpassed only by ultra-thin SAM gate dielectrics.

• 한국정보디스플레이학회:학술대회논문집
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• 2009.10a
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• pp.858-860
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• 2009

We have applied self-assembled monolayer to make high performance and stable OTFT on the organic gate dielectric. The ${\beta}$-phenethyltrichlorosilane (SAM) was coated on the organic gate dielectric and then active layer was printed. Significant improvements in on-currents and threshold voltage shift were achieved for the SAM treated devices compared to device without SAM.

• 한국정보디스플레이학회:학술대회논문집
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• 2005.07b
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• pp.1288-1290
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• 2005

We report on the structural and electrical properties of amorphous Yttria-stabilized zirconia (YSZ) thin films which are the potential high-k gate dielectric material of organic thin film transistor (OTFT). To investigate the influence of the oxygen flow rate on the structural and electrical properties of the YSZ films, XRD, XPS, J-E, I-V were carried out in this work. Oxygen vacancies are expected to be the most predominant type of defect in metal-oxide dielectrics. The leakage current density decreased mainly because of the reduction of oxygen vacancies with increasing oxygen flow rate.

• 한국정보디스플레이학회:학술대회논문집
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• 2006.08a
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• pp.314-316
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• 2006

In this paper, the plastic organic thin-film transistors (OTFTs) with $32{\ast}32$ array are presented. Flexible organic light emitting diodes (OLEDs) operated by OTFTs are fabricated with a novel lamination method and the results are also presented. OTFT pixels defined by photolithography, and pentacene deposited by thermal evaporation. Fabrication method and the performances of green PHOLEDs with high efficiency, stability, and electrical performance are discussed.

• Proceedings of the KIEE Conference
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• 2011.07a
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• pp.1499-1500
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• 2011

In this paper, we investigated the electrical properties change of 6,13-bis(triisopropyl-silylethynyl) pentacene (TIPS-pentacene) depending on polymer blend. We fabricated organic thin film transistor (OTFT) using blending solution of small molecule and polymer. In this study poly(2-methoxy-5-(2-ethyl-hexyloxy)-1,4-phenylene-vinylene) (MEH-PPV), poly (9-vinylcarbazole) (PVK), poly [N,N'-bis(4-butylphenyl)-N,N'-bis(phenyl)benzidine] (poly-TPD), poly(${\alpha}$-methyl styrene), Poly(methyl methacrylate) (PMMA) are used as a polymer. Fabricated OTFT with blending solution of TIPS-pentacene and PVK shows best performance in this experiment. OTFT fabricated by blending solution of TIPS-pentacene and PVK shows field effect mobility of 0.0189 $cm^2/V{\cdot}s$, on/off ratio of 1.9E-5 and threshold voltage of 7.4 V.

• Electronics and Telecommunications Trends
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• v.20 no.5 s.95
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• pp.56-69
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• 2005

유기물이 반도체 성질을 가질 수 있다는 것이 밝혀지면서 많은 여러 가지 응용분야에 많은 연구가 진행되어 왔다. 유기 반도체는 무기 반도체와 다르게 적절한 용매에 녹는다는 장점이 있다. 이 장점을 활용해 소자 제작에 직접 인쇄법인 그래픽 인쇄 방식을 사용할 수 있다. 본 기고문에서는 유기 반도체의 여러 응용 분야 중 직접 인쇄법으로 제작한 유기 전계효과 트랜지스터(OTFT)를 중심으로 기술 발전 방향과 연구 동향, 대표적 벤처 기업 등에 관하여 기술하였다.

• Journal of the Microelectronics and Packaging Society
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• v.12 no.4 s.37
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• pp.359-363
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• 2005

The organic insulation devices with MIM (metal-insulator-metal) structures as PVP gate insulation films were prepared for the application of organic thin film transistors (OTFT). The co-polymer organic insulation films were synthesized by using PVP(poly-4-vinylphenol) as solute and PGMEA (propylene glycol monomethyl ether acetate) as solvent. The cross-linked PVP insulation films were also prepared by addition of poly (melamine-co-formaldehyde) as thermal hardener. The leakage current of the cross-linked PVP films was found to be about 300 pA with low current noise. and showed better property in electrical properties as compared with the co-polymer PVP insulation films. In addition, cross-linked PVP insulation films showed better surface morphology (roughness), showing about 0.11${\~}$0.18 nF in capacitance for all PVP film samples.

• 한국정보디스플레이학회:학술대회논문집
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• 2007.08b
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• pp.1295-1297
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• 2007

In this study, we report that the characteristics of OTFTs can be improved by the UV exposure of the surface of the synthesized photo-reactive gate insulator, and be optimized by controlling the exposure time. As a gate dielectric, the modified PVP was prepared by substituting hydroxyl group in PVP with cinnamoyl group. The synthesis details and the effects of the modified PVP on the device performance are discussed.