• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
• /
• 2007.06a
• /
• pp.492-493
• /
• 2007

We have investigated Electrical Properties of Organic Light-Emitting Diode depending on Varied Temperature using 8-hydroxyquinoline aluminum($Alq_3$) as an electron transport and emissive material. We analyzed the electrical properties of organic light emitting diodes by impedance characteristics of ITO/$Alq_3$/Al. Impedance characteristics was measured complex impedance Z and phase e in the frequency range of 40 Hz to $10^7\;Hz$. From these analyses, we are able to interpret electrical Properties of OLED depending on temperature.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
• /
• v.22 no.10
• /
• pp.850-853
• /
• 2009

We have optimized the device structure by using the dielectric layer such as anti-reflection thin film to improve the emitting efficiency of white organic light emitting device (WOLED). Basically, dielectric layer with anti-reflection characteristics can enhance the emitting efficiency of WOLED by compensating the refractive index of organic layer, ITO, and Glass. Here, WOLED was designed and optimized by Macleod simulator. The refractive index of 1.74 was calculated for Dielectric layer and was selected as $TiO_2$. The optimal thicknesses of $TiO_2$ and ITO were 119.3 and 166.6 nm, respectively, at the wavelength of 600 nm. The transmittance of ITO was measured with the thickness variation of dielectric layer and ITO in Organic layer/ITO/Dielectric layer structure. The transmittance of ITO was 95.17% and thicknesses of $TiO_2$ and ITO were 119.3 and 166.6 nm, respectively. This result, calculated and measured values were coincided.

• Journal of Korea Society of Industrial Information Systems
• /
• v.10 no.2
• /
• pp.76-81
• /
• 2005

This research approached electrical characteristics of organic light emitting diodes getting into the spotlight by next generation display device. Basic mechanism of OLED's emitting is known as that electron by cathode of lower work function and hole by anode of higher work function are driven and recombine exciton-state being flowed in emitting material layer passing carrier transport layer In order to make many electron-hole pairs, we must manufacture device in multi-layer structure. There are Carrier Injection Layer(CIL), Carrier Transport Layer(CTL) and Emitting Material Layer(EML) in multi-layer structure. It is important that regulate thickness of layer for high luminescence efficiency and set mobility of hole and electron.

• Transactions on Electrical and Electronic Materials
• /
• v.6 no.5
• /
• pp.221-224
• /
• 2005

To overcome of poor electron injection in organic light-emitting diodes (OLEDs) with Al cathode, a thin layer of inorganic insulating materials, like as LiF, is inserted between an Al cathode and an organic electron transport layer. Though the device, mentioned above, improves both turn on voltage and luminescent properties, it has some problems like as thickness restriction, less than 2 nm, and difficulty of deposition control. On the other hand, Li organic complex, Liq, is less thickness restrictive and easy to deposit and it also enhances the performance of devices. This paper reports the improved electron injection on OLEDs with another I A group metal complex, Potassium quinolate (Kq), as an electron injection material. OLEDs with organic complexes showed improved turn-on voltage and luminous efficiency which are remarkably improved compared to OLEDs with Al cathode. Especially, OLEDs with Kq have longer life time than OLEDs with Liq.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
• /
• 2000.04a
• /
• pp.121-124
• /
• 2000

Achieving red light-emitting diodes with high quantum and luminous efficiency is required to fabricate the full-color organic electroluminescence display. In this work, we report that devices with 2.3,7,8,12,13,17,18-Octaethyl-21H,23H-porphine palladium (II) (PdOEP), doped into tris(8-Hydroxyquinolinato)-aluminum (III) (Alq3) show a narrow deep red emission (670nm). In addition, PdOEP has been used as host material in which red dyes such as 4-(Dicyanomethylene)-2-methyl-6-(4-dimethylaminostyryl)-4H-pyran (DCM) doped in order to fabricate efficient red-emitting diodes.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
• /
• v.21 no.3
• /
• pp.255-259
• /
• 2008

Built-in voltage in ITO/$Alq_3$/ Al organic light-emitting diodes was studied by varying a thickness of $Alq_3$ layer using modulated photocurrent technique at ambient condition. A thickness of the $Alq_3$ layer was varied from 100 to 250 nm. From the bias voltage-dependent photocurrent, built-in voltage of the device was able to be determined. The obtained built-in voltage is about 0.8 V irrespective of the $Alq_3$ layer thickness in the device. This value of built-in voltage confirms that the built-in voltage is generated due to a difference of work function of the anode and cathode. The $Alq_3$ layer thickness independent built-in voltage indicates that the built-in electric field in the device is uniform across the organic layer.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
• /
• 2005.07a
• /
• pp.537-538
• /
• 2005

A way of measuring an efficiency of organic light-emitting diodes are studied. The efficiency is obtained from the current-voltage-luminance characteristics of the devices. Basically, number of charge carriers are obtained from the current-voltage characteristics, and the number of photons are obtained from the current of Si-photodetector. The organic light-emitting diodes are assumed as a lambertian light source and a program is made for calculating the efficiency. A device structure of ITO/TPD/$Alq_3$/Al is manufactured using thermal-vapor evaporation. This device is set into a measuring system and measured the efficiency. The efficiencies are measured using the lab-made program and commercially available equipments. The obtained values are similar to each other within 10% uncertainty.

• Transactions on Electrical and Electronic Materials
• /
• v.6 no.3
• /
• pp.97-100
• /
• 2005

Dynamic response of organic light-emitting diodes were analyzed in $ITO/Alq_3$(100 nm)/Al device structure with a variation of voltage an frequency. At low frequency region, complex impedance is mostly governed by resistive component, and at high frequency region by capacitive component. Also, we have evaluated resistance, capacitance and permittivity of devices.

• International Journal of Precision Engineering and Manufacturing
• /
• v.7 no.2
• /
• pp.52-55
• /
• 2006

The OLEDs(Organic Light-Emitting Diodes) structure organizes the bottom layer using glass, ITO(indium thin oxide), hole injection layer, hole transport layer, emitting material layer, electron transport layer, electron injection layer and cathode using metal. OLED has various advantages. OLEDs research has been divided into structural side and emitting material side. The amount of emitting light and luminescence efficiency has been improved by continuing effort for emitting material layer. The emitting light mechanism of OLEDs consists of electrons and holes injected from cathode and anode recombination in emitting material layer. The mobilities of injected electrons and holes are different. The mobility of holes is faster than that of electrons. In order to get high luminescence efficiency by recombine electrons and holes, the balance of their mobility must be set. The more complex thin film structure of OLED becomes, the more understanding about physical phenomenon in each interface is needed. This paper observed what the thickness change of hole transport layer has an affection through the below experiments. Moreover, this paper uses numerical analysis about carrier transport layer thickness change on the basis of these experimental results that agree with simulation results.

• 한국정보디스플레이학회:학술대회논문집
• /
• 2004.08a
• /
• pp.688-691
• /
• 2004

In this study, we synthesized a new red emitting material of a Red225 doped into $Alq_3$ (tris(8-quinolinolato)aluminum (III)) and fabricated white organic light-emitting diodes (OLEDs) with a simple device structure. With a blue emitting material of DPVBi (4,4'-bis(2,2'-diphenylvinyl)1,1'-biphenyl) that can transfer effectively both a hole and an electron, OLEDs with a narrow emission layer could be possible without a hole-blocking layer. Consequently, the driving voltage and stability of devices have been improved. The devices show the Commission Internationale d'Eclairage (CIE) chromaticity coordinates of (0.36, 0.35) at luminance of 2000 cd/$m^2$. The luminous efficiency is about 3.5 cd/A, luminance is about 12000 cd/$m^2$ and current density is about 350 mA/$cm^2$ at 12 V, respectively.