• Title/Summary/Keyword: organic light emitting diode(OLED)

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Warpage of Flexible OLED under High Temperature Reliability Test (고온 신뢰성 시험에서 발생된 플렉서블 OLED의 휨 변형)

  • Lee, Mi-Kyoung;Suh, Il-Woong;Jung, Hoon-Sun;Lee, Jung-Hoon;Choa, Sung-Hoon
    • Journal of the Microelectronics and Packaging Society
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    • v.23 no.1
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    • pp.17-22
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    • 2016
  • Flexible organic light-emitting diode (OLED) devices consist of multi-stacked thin films or layers comprising organic and inorganic materials. Due to thermal coefficient mismatch of the multi-layer films, warpage of the flexible OLED is generated during high temperature process of each layer. This warpage will create the critical issues for next production process, consequently lowering the production yield and reliability of the flexible OLED. In this study, we investigate the warpage behavior of the flexible OLED for each bonding process step of the multi-layer films using the experimental and numerical analysis. It is found that the polarizer film and barrier film show significant impact on warpage of flexible OLED, while the impact of the OCA film on warpage is negligible. The material that has the most dominant impact on the warpage is a plastic cover. In order to minimize the warpage of the flexible OLED, we estimate the optimal material properties of the plastic cover using design of experiment. It is found that the warpage of the flexible OLED is reduced to less than 1 mm using a cover plastic of optimized properties which are the elastic modulus of 4.2 GPa and thermal expansion coefficient of $20ppm/^{\circ}C$.

Emission Characteristics of Red OLEDs in the Emitting Layer Position Doped with DCM2 and Rubrene (DCM2와 Rubrene이 첨가된 발광층 위치에 따른 적색 OLED의 발광 특성)

  • Jung, Haeng-Yun;Gu, Hal-Bon
    • Journal of the Korean Institute of Electrical and Electronic Material Engineers
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    • v.24 no.8
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    • pp.664-668
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    • 2011
  • In this study, we have fabricated the red OLED (organic light emitting diode). The basic device structure is ITO/hole transporting layer, TPD(500 $\AA$)/red emitting layer, Alq3 doped with DCM2:rubrene(20 $\AA$)/electron transporting layer, Alq3(M) (500 $\AA$-M $\AA$)/LiF(15 $\AA$)/Al(1,000 $\AA$). The thickness of electron transporting layer(500 $\AA$-M $\AA$) changed 0, 20, 40, 60 $\AA$. Turn on voltage of the red OLED was 5 V, 6 V, 6.5 V and 7.5 V, respectively with electron transfer layer changed ratio. Luminance of red OLED was 4,504, 1,840, 1,490 and 1,130 cd/$m^2$, respectively. Optimized electron transfer layer position changed ratio of the red OLED was 0 $\AA$.

Simulation study on the optical structures for improving the outcoupling efficiency of organic light-emitting diodes

  • Jeong, Su Seong;Ko, Jae-Hyeon
    • Journal of Information Display
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    • v.13 no.4
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    • pp.139-143
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    • 2012
  • In this study, optical simulation was used to compare three optical structures that could be applied to the typical organic light-emitting diode to increase the outcoupling efficiency. These were spherical scattering particles (treated as Mie scatterers) embedded in the glass substrate, microlenses formed on the glass substrate, and a diffusing layer (DL) with a Gaussian scattering distribution function inserted between the indium tin oxide (ITO) and the glass substrate. It was found that the application of microlens array and that of scattering particles in the glass substrate exhibited similar enhancements in the outcoupling efficiency when the density and the refractive index of the scattering particles were optimized. The DL located at the interface between the glass and the ITO further enhanced the efficiency because it could further extract the trapped light in the waveguide mode. The appropriate combination of these three structures increased the outcoupling efficiency to about 42%, which is much greater than the typical values of 15-20% when there is no optical structure for light extraction.

An Exploratory research on patent trends and technological value of Organic Light-Emitting Diodes display technology (Organic Light-Emitting Diodes 디스플레이 기술의 특허 동향과 기술적 가치에 관한 탐색적 연구)

  • Kim, Mingu;Kim, Yongwoo;Jung, Taehyun;Kim, Youngmin
    • Journal of Intelligence and Information Systems
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    • v.28 no.4
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    • pp.135-155
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    • 2022
  • This study analyzes patent trends by deriving sub-technical fields of Organic Light-Emitting Diodes (OLEDs) industry, and analyzing technology value, originality, and diversity for each sub-technical field. To collect patent data, a set of international patent classification(IPC) codes related to OLED technology was defined, and OLED-related patents applied from 2005 to 2017 were collected using a set of IPC codes. Then, a large number of collected patent documents were classified into 12 major technologies using the Latent Dirichlet Allocation(LDA) topic model and trends for each technology were investigated. Patents related to touch sensor, module, image processing, and circuit driving showed an increasing trend, but virtual reality and user interface recently decreased, and thin film transistor, fingerprint recognition, and optical film showed a continuous trend. To compare the technological value, the number of forward citations, originality, and diversity of patents included in each technology group were investigated. From the results, image processing, user interface(UI) and user experience(UX), module, and adhesive technology with high number of forward citations, originality and diversity showed relatively high technological value. The results provide useful information in the process of establishing a company's technology strategy.

Light Emitting Diodes Based on Poly-o-toluedine (폴리톨루이딘을 이용한 발광소자 연구)

  • Park, Su Beom;Lee, Seong Ju;Kim, Yong Rok;Kim, Eun Ok
    • Journal of the Korean Chemical Society
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    • v.46 no.3
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    • pp.229-232
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    • 2002
  • Poly-o-toluidine (POT) was chemically and electrochemically synthesized for the study of electronic and steric effect of methyl substituents. The turn-on voltage of organic light emitting diode (OLED) was 9~14 V. ITO/POT/Al structured OLED were fabricated with various oxidation states of POT. PL, I-V characteristics and EL spectra were investigated.

Fabrication of Organic Electroluminescent Device and electro-optical properties using metal-chelates($Snq_2,Snq_4$) for Emitting Material Layer (금속-킬레이트계($Snq_2,Snq_4$) 발광층을 이용한 유기 전기 발광 소자의 제작과 전기.광학적 특성)

  • Yoon, H.C.;Yoo, J.H.;Kim, B.S.;Kim, J.K.;Kwon, Y.S.
    • Proceedings of the KIEE Conference
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    • 2002.07c
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    • pp.1575-1577
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    • 2002
  • In this study, multi layer type OLED(Organic Light Emitting Diode) has been fabricated using $Snq_2$, $Snq_4$, and $Alq_3$ for development of high efficiency, electrical and optical properties of multi layer type OLED investigated. The HTL(Hole Transfer Layer) and EML(Emitting Material Layer) were fabricated by using vacuum evaporation on ITO electrode, and its thickness controlled using thickness monitor. Al was used as a cathode. The electrical and optical properties such as J-V, brightness-V and EL spectrum of OLED device was measured using I.V.L.T system. The result, brightness of $Alq_3$, $Snq_2$ and $Snq_4$ were $3900cd/m^2$, $63cd/m^2$ and $23cd/m^2$ respectively.

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Application of Si3N4 Thin Film as a Humidity Protection Layer for Organic Light Emitting Diode (Si3N4 박막의 유기발광소자 수분침투 방지막으로의 응용)

  • Kim, Chang-Jo;Shin, Paik-Kyun
    • Journal of the Korean Institute of Electrical and Electronic Material Engineers
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    • v.23 no.5
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    • pp.397-402
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    • 2010
  • In this paper, we studied WVTR(water vapor transmission rate) properties of $Si_3N_4$ thin film that was deposited using TCP-CVD (transformer coupled plasma chemical vapor deposition) method for the possibility of OLED(organic light emitting diode) encapsulation. Considering the conventional OLED processing temperature limit of below $80^{\circ}C$, the $Si_3N_4$ thin films were deposited at room temperature. The $Si_3N_4$ thin films were prepared with the process conditions: $SiH_4$ and $N_2$, as reactive gases; working pressure below 15 mTorr; RF power for TCP below 500 W. Through MOCON test for WVTR, we analyzed water vapor permeation per day. We obtained that WVTR property below 6~0.05 gm/$m^2$/day at process conditions. The best preparation condition for $Si_3N_4$ thin film to get the best WVTR property of 0.05 gm/$m^2$/day were $SiH_4:N_2$ gas flow rate of 10:200 sccm, working pressure of 10 mTorr, working distance of 70 mm, TCP power of 500 W and film thickness of 200 nm. respectively. The proposed results indicates that the $Si_3N_4$ thin film could replace metal or glass as encapsulation for flexible OLED.

Implementation of Charge-Pump Active-Matrix OLED Panel with $64\;{\times}\;64$ Pixels Using $ITO/SiO_2/ITO$ Capacitors and a-Si:H Schottky Diodes

  • Na, Se-Hwan;Seo, Jong-Wook;Kwak, Mi-Young;Shim, Jae-Hoon
    • 한국정보디스플레이학회:학술대회논문집
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    • 2006.08a
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    • pp.1267-1270
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    • 2006
  • Organic light-emitting diode (OLED) display panel with $64\;{\times}\;64$ pixels utilizing the charge-pump (CP) pixel addressing method was fabricated using conventional thin-film processes. Each pixel consists of a-Si:H Schottky diode and $ITO/SiO_2/ITO$ capacitor. It is shown that CP-OLED is technically feasible for information display and a driving voltage below $4V_{pp}$ is enough for nominal operation.

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Depth sensitivity of stereoscopic displays

  • Choi, Byeong-Hwa;Choi, Dong-Wook;Lee, Ja-Eun;Lee, Seung-Bae;Kim, Sung-Chul
    • Journal of Information Display
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    • v.13 no.1
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    • pp.43-49
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    • 2012
  • Depth sensitivity is considered one of the factors influencing 3D displays the most. In this paper, the perceptual 3D depth was quantitatively measured to compare the depth difference among the display devices. No difference was found in the typical display performance among the devices, but the subjective evaluation of the depth sensitivity where the disparity was varied showed that the organic light emitting diode (OLED) had the highest performance, mainly due to its almost 0% crosstalk, one of the features of OLED. Crosstalk is a form of image superposition that greatly affects the depth sensitivity. The experiment results showed that the quantitative depth sensitivity varies due to geometric factors such as disparity, viewing distance, and subjective sensitivity, depending on the display image characteristics, such as crosstalk and contrast.

Study on the Reliability of an OLED Pixel Circuit Using Transient Simulation (과도상태 시뮬레이션을 사용한 OLED 픽셀 회로의 신뢰성 분석 방안 연구)

  • Jung, Taeho
    • Journal of the Semiconductor & Display Technology
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    • v.20 no.4
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    • pp.141-145
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    • 2021
  • The brightness of the Organic Light Emitting Diode (OLED) display is controlled by thin-film transistors (TFTs). Regardless of the materials and the structures of TFTs, an OLED suffers from the instable threshold voltage (Vth) of a TFT during operation. When designing an OLED pixel with circuit simulation tool such as SPICE, a designer needs to take Vth shift into account to improve the reliability of the circuit and various compensation methods have been proposed. In this paper, the effect of the compensation circuits from two typical OLED pixel circuits proposed in the literature are studied by the transient simulation with a SPICE tool in which the stretched-exponential time dependent Vth shift function is implemented. The simulation results show that the compensation circuits improve the reliability at the beginning of each frame, but Vth shifts from all TFTs in a pixel need to be considered to improve long-time reliability.