• 한국정보디스플레이학회:학술대회논문집
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• 2004.08a
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• pp.269-271
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• 2004

In this report, high-performance organic light-emitting diodes (OLEDs) with polytetrafluoroethylene (Teflon) buffer layer are demonstrated. Compared with conventional buffer layer, copper phthalocaynine (CuPc), Teflon film shows lower absorption in the wavelength from 200nm to 800nm The OLEDs with Teflon and CuPc buffer layer were fabricated under same conditions, and the device performances were compared. The results indicate that when the thickness of Teflon is 1.5nm, the performance of OLEDs is greatly enhanced with an efficiency of 9.0cd/A at the current density of 100mA/$cm^2$, while the device with an optimized 30-nm-thick CuPc buffer layer only shows an efficiency of6.4cd/A at the same current density.

• Journal of the Korean Applied Science and Technology
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• v.20 no.2
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• pp.173-176
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• 2003

We have seen the effects of buffer layer in organic light-emitting diodes using poly(N-vinylcarbazole)(PVK). Polymer PVK buffer layer was made using static spin-casting method. Two device structures were made; one is ITO/TPD/Alq3/Al as a reference and the other is ITO/PVK/TPD/Alq3/Al to see the effects of buffer layer in organic light-emitting diodes. Current-voltage characteristics, luminance-voltage characteristics and luminous efficiency were measured with a variation of spin-casting speeds. We have obtained an improvement of luminous efficiency by a factor of two and half when the PVK buffer layer is used.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2002.04b
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• pp.53-56
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• 2002

The effect of $\alpha$-septithiophene (${\alpha}-7T$) layers on the organic light emitting diode(OLED) was studied. The ${\alpha}-7T$ was used for a buffer layer in OLED. Hole injection was investigated and improved emission efficiency. The OLEDs structure can be described as indium tin oxide(ITO)/ buffer layer / hole transporting layer / emitting layer / electron transporting layer / LiF / Al. The hole transporting layer were composed of N,N-diphenyl-N,N-di(3-methylphenyl)-1,1-biphenyl-4,4-diamine(TPD), and N,N-di(naphthalene-1-ly)-N,N-diphenyl-benzidine( ${\alpha}$-NPD). The emitting layer, and electron transporting layer consist of tris(8-hydroxyquinolinato) aluminum($Alq_3$). All organic layer were deposited at a background pressure of less than $10^{-6}$ torr using ultra high vacuum (UHV) system. The ${\alpha}-7T$ layer can substitute the hole blocking layer, and improve hole injection properties.

• Journal of Information Display
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• v.4 no.1
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• pp.29-33
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• 2003

We have investigated the effects of hole-injection buffer layer in organic light-emitting diodes using copper phthalocyanine (CuPc), poly(vinylcarbazole)(PVK), and Poly(3,4-ethylene dioxythiophene):poly(styrenesulfonate) (PEDOT: PSS) in a device structure of $ITO/bufferr/TPD/Alq_3/Al$. Polymer PVK and PEDOT:PSS buffer layer were produced using the spin casting method where as the CuPc layer was produced using thermal evaporation. Current-voltage characteristics, luminance-voltage characteristics and efficiency of device were measured at room temperature at various a thickness of the buffer layer. We observed an improvement in the external quantum efficiency by a factor of two, four, and two and half when the CuPc, PVK, and PEDOT:PSS buffer layer were used, respectively. The enhancement of the efficiency is assumed to be attributed to the improved balance of holes and elelctrons resulting from the use of hole-injection buffer layer. The CuPc and PEDOT:PSS layer function as a hole-injection supporter and the PVK layer as a hole-blocking one.

• Proceedings of the Korean Vacuum Society Conference
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• 2015.08a
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• pp.147-147
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• 2015

The multilayer structure of the organic light emitting diode has merits of improving interfacial characteristics and helping carriers inject into emission layer and transport easier. There are many reports to control hole injection from anode electrode by using transition metal oxide as an anode buffer layer, such as V2O5, MoO3, NiO, and Fe3O4. In this study, we apply thin films of LiF which is usually inserted as a thin buffer layer between electron transport layer(ETL) and cathode, as an anode buffer layer to reduce the hole injection barrier height from ITO. The thickness of LiF as an anode buffer layer is tested from 0 nm to 1.0 nm. As shown in the figure 1 and 2, the luminous efficiency versus current density is improved by LiF anode buffer layer, and the threshold voltage is reduced when LiF buffer layer is increased up to 0.6 nm then the device does not work when LiF thickness is close to 1.0 nm As a result, we can confirm that the thin layer of LiF, about 0.6 nm, as an anode buffer reduces the hole injection barrier height from ITO, and this results the improved luminous efficiency. This study shows that LiF can be used as an anode buffer layer for improved hole injection as well as cathode buffer layer.

• 한국정보디스플레이학회:학술대회논문집
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• 2002.08a
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• pp.766-769
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• 2002

We have seen the effects of hole-injection buffer layer in organic light-emitting diodes using copper phthalocyanine(CuPc), poly(vinylcarbazole)(PVK), and Poly(3,4-ethylenedioxythiophene):poly(styrene-sulfonate)(PEDOT:PSS) in a device structure of ITO/buffer/TPD/$Alq_3$/Al. Polymer PVK and PEDOT:PSS buffer layer was made using spin casting method and the CuPc layer was made using thermal evaporation. Current-voltage characteristics, luminance-voltage characteristics and efficiency of device were measured at room temperature with a thickness variation of buffer layer. We have obtained an improvement of the external quantum efficiency by a factor of two, four, and two and half when the CuPc, PVK, and PEDOT:PSS buffer layer are used, respectively. The enhancement of the efficiency is attributed to the improved balance of holes and elelctrons due to the use of hole-injection buffer layer. The CuPc and PEDOT:PSS layer functions as a hole-injection supporter and the PVK layer as a hole-blocking one.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2001.07a
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• pp.174-177
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• 2001

We have seen the effects of buffer layer in organic light-emitting diodes using poly(N-vinylcarbazole)(PVK). Polymer PVK buffer layer was made using spin casting techniques. Two different types of spin casting have been applied; static coating and dynamic coating. Two device structures were fabricated; one is ITO/TPD/Alq$_3$/Al as a reference, and the other is ITO/PVK/TPD/Alq$_3$/Al to see the effects of buffer layer in organic light-emitting diodes. Current-voltage characteristics and luminous efficiency were measured with a variation of spin-casting methods and rpm speeds. We have obtained an improvement of luminous efficiency by a factor of two and half when the PVK buffer layer is used.

• The Transactions of the Korean Institute of Electrical Engineers C
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• v.55 no.1
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• pp.30-33
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• 2006

Transparent indium tin oxide (ITO) anode surface was modified using $O_3$ Plasma and organic ultrathin buffer layers were deposited on the ITO surface using 13.56 MHz RF plasma polymerization technique. The EL efficiency, operating voltage and lifetime of the organic light-emitting device (OLED) were investigated in order to study the effect of the plasma surface treatment and role of plasma polymerized organic ultrathin buffer layer. Poly methylmethacrylate (PMMA) layers were plasma polymerized on the ITO anode as buffer layer between anode and hole transport layer (HTL). The plasma polymerization of the organic ultrathin layer were carried out at a homemade capacitive-coupled RF plasma equipment. N,N'-diphenyl-N,N'(3- methylphenyl)-1,1'-diphenyl-4,4'-diamine (TPD) as HTL, Tris(8-hydroxyquinolinato) Aluminum $(Alq_3)$ as both emitting layer (EML)/electron transport layer (ETL), and aluminum layer as cathode were deposited using thermal evaporation technique. Effects of the plasma surface treatment of ITO and plasma polymerized buffer layers on the OLED performance were discussed.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.17 no.2
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• pp.228-235
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• 2004

In this thesis, it is designed efficient electrode formation on the organic luminescent device. ITO electrode is treated with $O_2$plasma. In order to inject hole efficiently, there is proposed the shape of anode that inserted plasma polymerized films as buffer layer between anode and organic layer using thiophene monomer. It is realized efficiently electron injection to aluminum due to introduce the quantum well in cathode. In the case of device inserted the buffer layer by using the plasma poiymerization after $O_2$plasma processing for ITO transparent electrode, since it forms the stable interface and reduce the moving speed of hole, the recombination of hole and electronic ate made in the omitting layer. Compared with the devices without buffer layer, the turn-on voltage was lowered by 1.0(V) doc to the introduction of buffer layer Since the quantum well structure is formed in front of cathode to optimize the tunneling effect, there is improved the power efficiency more than two times.

• Transactions on Electrical and Electronic Materials
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• v.8 no.6
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• pp.260-264
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• 2007

We have studied stability in organic light-emitting diode depending on buffer layer and cathode. A transparent electrode of indium-tin-oxide(ITO) was used as an anode. An electron injection energy barrier into organic material is different depending on a work function of cathodes. Theoretically, the energy barriers for the electron injection are 1.2 eV, -0.1 eV, and 0.0 eV for Al, LiAl, and LiF/Al at 300 K, respectively. We considered the cases that holes are injected to organic light-emitting diode. The hole injection energy barrier is about 0.7 eV between ITO and TPD without buffer layer. For hole-injection buffer layers of CuPc and PEDOT:PSS, the hole injection energy barriers are 0.4 eV and 0.5 eV, respectively. When the buffer layer of CuPc and PEDOT:PSS is existed, we observed the effects of hole injection energy barrier, and a reduction of operating-voltage. However, in case of PVK buffer layer, the hole injection energy barrier becomes high(1.0 eV). Even though the operating voltage becomes high, the efficiency is improved. A device structure for optimal lifetime condition is ITO/PEDOT:PSS/TPD/$Alq_3$/LiAl at an initial luminance of $300cd/m^2$.