• Journal of Photoscience
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• v.10 no.2
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• pp.203-208
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• 2003

Two coupled molecules were successfully synthesized by condensation of amine-donor-substituted barbituric acid derivativies as nonlinear optical chromophores. A flexible spacer of the alkyl chain with different lengths of carbon chains (5 and 6 carbons) was introduced between two chromophores, which prevented crystallization and aggregation of molecules. Two coupled molecules (B-Cn-B, n=5, 6) had glass-transition temperatures on a second heating around 81 and 76$^{\circ}C$ without melting points, respectively. To explore the linear optical properties, thin-films were prepared and examined by a photometry method using Nd:YVO$_4$ CW laser. Also, microscopic and macroscopic nonlinear optical properties were measured by Hyper-Rayleigh Scattering (HRS) and the Maker Fringes method using Nd:YAG ps pulse laser, respectively. In spite of the moderate hyperpolarizabilities of coupled molecules, the second order NLO coefficient (d$\_$33/) was larger than the conventional Disperse Red 1 doped PMMA polymeric system.

• Current Optics and Photonics
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• v.1 no.6
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• pp.598-603
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• 2017

Traditional three-dimensional (3-D) laser imaging systems are based on real aperture imaging technology, whose resolution decreases as the range increases. In this paper, we develop a novel 3-D imaging technique based on the synthetic aperture technology in which the imaging resolution is significantly improved and does not degrade with the increase of the range. We consider an imaging laser radar (ladar) system using the floodlight transmitting mode and multi-beam receiving mode. High 3-D imaging resolutions are achieved by matched filtering the linear frequency modulated (LFM) signals respectively in range, synthetic aperture along-track, and the real aperture across-track. In this paper, a novel 3-D imaging signal model is given first. Because of the motion during the transmission of a sweep, the Doppler shift induced by the continuous motion is taken into account. And then, a proper algorithm for the 3-D imaging geometry is given. Finally, simulation results validate the effectiveness of the proposed technique.

• Korean Journal of Materials Research
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• v.9 no.6
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• pp.599-603
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• 1999

We have investigated the growth characteristics of thick GaN on Sim substrate with AlN and low temperature GaN buffer layer. The vertical hydride vapor phase epitaxy system with $GaCl_3$ precursor was used for growth of GaN. AlN and GaN buffer layer were deposited on Si substrate to reduce the lattice mismatch and the thermal expansion coefficient mismatch between si and GaN. Optimization of deposition condition for AlN and low temperature GaN buffer layers were carried out. We studied the effects of growth temperature, V/III ratio on the properties of thick GaN. Surface morphology, growth rate and crystallinity of thick GaN were measured using Atomic Force Microscopy (AFM), $\alpha-step$-, Scanning Electron Microscopy (SEM) and X-Ray Diffractometer(XRD).

• Nuclear Engineering and Technology
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• v.55 no.2
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• pp.595-602
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• 2023

The EAST ICRF system operating space has been extended in power and phase control with a low-level RF system for the new double-strap antenna. Then the multi-step power and periodic phase scanning experiment were conducted in L-mode plasma, respectively. In the power scanning experiment, the stored energy, radiation power, plasma impedance and the antenna's temperature all have positive responses during the short ramp-ups of P_L;ICRF. The core ion temperature increased from 1 keV to 1.5 keV and the core heating area expanded from |Z| ≤ 5 cm to |Z| ≤ 10 cm during the injection of ICRF waves. In the phasing scanning experiment, in addition to the same conclusions as the previous relatively phasing scanning experiment, the superposition effect of the fluctuation of stored energy, radiation power and neutron yield caused by phasing change with dual antenna, resulting in the amplitude and phase shift, was also observed. The active control of RF output facilitates the precise control of plasma profiles and greatly benefits future experimental exploration.

• Journal of the Microelectronics and Packaging Society
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• v.10 no.3
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• pp.83-88
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• 2003

The optoelectronic characteristics of semiconducto-atomic superlattice as a function of deposition temperature and annealing conditions have been studied. The nanocrystalline silicon/adsorbed oxygen superlattice formed by molecular beam epitaxy(MBE) system. As an experimental result, the superlattice with multilayer Si-O structure showed a stable photoluminescence(PL) and good insulating behavior with high breakdown voltage. This is very useful promise for Si-based optoelectronics and quantum devices as well as for the replacement of silicon-on-insulator (SOI) in ultra-high speed and lower power CMOS devices in the future, and it can be directly integrated with silicon ULSI processing.

• Proceedings of the KIEE Conference
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• 1999.07g
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• pp.3233-3235
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• 1999

This paper describes development of a microprocessor-based optoelectronic guard system established a higher level of control reliability in machine guard design. The system uses the design concept of diverse redundancy and a fast software algorithm. We have accomplished an safety light curtain system that allows to be intentionally disabled moving machine by the interrupt of dangerous situations. As a result, it is showed that the proposed system is effective enough to practical applications.

• Polymer Science and Technology
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• v.21 no.1
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• pp.24-32
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• 2010

• Journal of Biomedical Engineering Research
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• v.25 no.6
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• pp.611-615
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• 2004

A neural prostheses can be designed to permit stimulation of specific sites in the nervous system to restore their functions, lost due to disease or trauma. This study focuses on the feasibility of optoelecronic stimulation into nervous system. Optoelectronic stimulation supplies, power and signal into the implanted optical detector inside the body by optics. It can be effective strategy especially on the retinal prosthesis, because it enables the non-invasive connection between the external source and internal detector through natural optical window 'eye'. Therefore, we designed an effective neural stimulating setup by optically based stimulation. Stimulating on the sciatic nerve of a rat with proper depth probe through optical stimulation needs higher ratio of current spreading through the neural surface, because of high impedance of neural interface. To increase the insertion current spreading into the neuron, we used a parallel low resistance compared to load resistance organic interface and calculated the optimized outer parallel resistance for maximum insertion current with the assumption of limited current by photodiode. Optimized outer parallel resistance was at a range of 500Ω-700Ω and a current was at a level between 580uA and 650uA. Stimulating current efficiency from initial photodiode induced current was between 47.5 and 59.7%. Various amplitude and frequency of the optical stimulation on the sciatic nerve showed the reliable visual tremble, and the action potential was also recorded near the stimulating area. These result demonstrate that optoelectronic stimulation with no bias can be applied to the retinal prosthesis and other neuroprosthetic area.

• Proceedings of the Korean Vacuum Society Conference
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• 2011.08a
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• pp.253-253
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• 2011

ZnTe semiconductor is very attractive a material for optoelectronic devices in the visible green spectral region because of it has direct bandgap of 2.26 eV. The prototypes of ZnTe light emitting diodes (LEDs) have been reported [1], showing that their green emission peak closely matches the most sensitive region of the human eye. The optoelectronic properties of ZnTe:O film allow to expect a large optical gain in the intermediate emission band, which emission band lies about 0.4-0.6 eV below the conduction band of ZnTe [2]. So, the ZnTe system is useful for the production of high-efficiency multi-junction solar cells [2,3]. In this work, the ZnTe:O thin films were deposited on Al2O3 substrates by using the radio frequency magnetron sputtering system. Three sets of samples were prepared using argon and oxygen as the sputtering gas. The deposition chamber was pre-pumped down to a base pressure of 10-7 Torr before introducing gas. The deposition pressure was fixed at 10-3 Torr throughout this work. During the ZnTe deposition, the substrate temperature was 300 oC. The optical properties were also investigated by using the ultraviolte-visible (UV-Vis) spectrophotometer.

• Proceedings of the Korean Institute of Information and Commucation Sciences Conference
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• 2013.05a
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• pp.726-728
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• 2013

Optoelectronic arc discharge sensor was used to detect arc discharge inside power distribution panel. Arc discharge is fatal to power system once it begins, thus preventive detection is necessary before power failure occurs. Optoelectronic detection method was used to avoid direct electrical contact to power apparatus inside power distribution panel. 180 degree detection angle and detection range far exceeding 6m, which was sufficient for monitoring purpose, was achieved using the photodiode having $7.5mm^2$ of active surface area and flash source with $0.4cal/cm^2$ energy density, which is equivalent to 1.9J with $2.16cm^2$ emitting area. The response speed of arc discharge sensor was measured to be below 1 msec. The above optoelectronic arc discharge sensor was measured to be sensitive enough to detect 0.94 pC charge.