• 제목/요약/키워드: optoelectronic properties

검색결과 224건 처리시간 0.022초

고분자 분산형 액정 표시 소자(PDLC)의 제작 및 측정: BDVE(Butanediol Vinyl Ether) 첨가에 따른 효과와 온도의존성 평가 (Electro-optic Properties of Polymer Dispersed Liquid Crystal Displays: Effect of BDVE(Butanediol Vinyl Ether) & Temprature Stability)

  • 노영석;전찬욱
    • Korean Chemical Engineering Research
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    • 제46권5호
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    • pp.938-944
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    • 2008
  • 고분자 분산형 액정 표시 소자(PDLC)에 사용되는 pre-polymer인 PN393에 다량으로 함유된 반응성 모노머 2-ethylhexyl acrylate(EHA)를 비닐에테르 계열의 모노머인 butanediol vinyl ether(BDVE)로 대체하여 제작된 PDLC 셀의 전기 광학적 특성 변화를 알아보았다. BDVE 함량 30 wt%까지는 액정방울의 크기가 작아졌으나, 그 이상의 조성(40 wt%)인 경우, 더 이상의 액정방울크기 변화는 관찰되지 않았다. 명암비, 응답속도는 상용화된 PN393를 적용한 경우보다 각각 490%, 15%로 성능이 향상되었으나, 동작전압은 약 60% 증가하는 것으로 확인되었다. 전기광학적 특성 변화를 $0{\sim}60^{\circ}C$ 온도범위에서 관찰한 결과, 응답속도와 동작전압의 온도안정성은 향상되었으나, 명암비 성능은 온도증가에 따라 열화되는 것으로 확인되었다.

페로브스카이트 소재의 광전자 특성 분석 (Elucidating the Optoelectronic Properties of Metal Halide Perovskites)

  • 이원종;최하정;임종철
    • 공업화학전망
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    • 제24권5호
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    • pp.1-14
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    • 2021
  • 유무기 하이브리드 금속-할라이드계 페로브스카이트(organic-inorganic metal halide perovskite) 페로브스카이트 반도체 소재는 광전자 소자와 소재 연구에 새로운 연구 흐름을 만들고 있다. 태양전지 성능이 불과 과거 몇 년 사이의 짧은 연구 기간에도 불구하고, 광-전 변환 소자 중에서도 단일 소자와 적층 소자(tandem)에서 높은 광-전 변환 효율을 나타내기 때문이다. 이러한 급격한 연구 성과와 성장에도 불구하고, 페로브스카이트 소재의 다양한 광전자 특성의 평가와 결과에 대한 논의가 필요한 상황이다. 특히 내부 이온 이동이 광전자 원거리 이동 특성 평가와 해석에 영향을 주는 경우, 페로브스카이트 소재를 기반으로 한 다양한 광전자 소자의 성능 향상과 해석에 여전히 모호함을 준다. 달리 얘기하면, 이 소재의 기초 특성을 이해하고자 적용하는 다양한 기존 특성 평가 분석법의 활용과 해석에도 복잡한 영향을 미치고 있다고 할 수 있다. 이러한 페로브스카이트 소재 내에서 광전자 원거리 이동을 측정하는 새로운 방법을 소개하고자 한다. 첫 번째 방법으로, Quasi-steady 상태에서 광전도도를 전기적 특성으로 측정하고, 광조사 하에 투과 및 반사를 광학적으로 측정하여, 전도도와 광전자 밀도를 동시에 평가하는 방법으로, photo-induced transmission and reflection (PITR) 분광분석법이다. 이 분광분석법은 실제 소자의 구동조건을 구현한 상태에서 광전자의 원거리 이동에서 발생하는 광전자 밀도 변화를 반영한 광전자 이동도 특성 평가라는 장점을 가지고 있다. 두 번째 방법으로, 기존의 연속 전압 인가 방법 대신 펄스형 전압 인가 방식을 도입하는 방법으로, pulsed voltage space charge limited current (PV-SCLC) 분석법이다. 이는 펄스형 전압 인가 방법으로 이온의 이동을 최소화하여, 전류-전압 측정에서 히스테리시스가 없고 측정결과의 재현성과 신뢰도가 매우 높은 장점이 있다.

Thickness-dependent Electrical, Structural, and Optical Properties of ALD-grown ZnO Films

  • Choi, Yong-June;Kang, Kyung-Mun;Park, Hyung-Ho
    • 마이크로전자및패키징학회지
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    • 제21권2호
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    • pp.31-35
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    • 2014
  • The thickness dependent electrical, structural, and optical properties of ZnO films grown by atomic layer deposition (ALD) at various growth temperatures were investigated. In order to deposit ZnO films, diethylzinc and deionized water were used as metal precursor and reactant, respectively. ALD process window was found at the growth temperature range from $150^{\circ}C$ to $250^{\circ}C$ with a growth rate of about $1.7{\AA}/cycle$. The electrical properties were studied by using van der Pauw method with Hall effect measurement. The structural and optical properties of ZnO films were analyzed by using X-ray diffraction, field emission scanning electron microscopy, and UV-visible spectrometry as a function of thickness values of ZnO films, which were selected by the lowest electrical resistivity. Finally, the figure of merit of ZnO films could be estimated as a function of the film thickness. As a result, this investigation of thickness dependent electrical, structural, and optical properties of ZnO films can provide proper information when applying to optoelectronic devices, such as organic light-emitting diodes and solar cells.

Large Area Bernal Stacked Bilayer Graphene Grown by Multi Heating Zone Low Pressure Chemical Vapor Deposition

  • Han, Jaehyun;Yeo, Jong-Souk
    • 한국진공학회:학술대회논문집
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    • 한국진공학회 2015년도 제49회 하계 정기학술대회 초록집
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    • pp.239.2-239.2
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    • 2015
  • Graphene is a most interesting material due to its unique and outstanding properties. However, semi-metallic properties of graphene along with zero bandgap energy structure limit further application to optoelectronic devices. Recently, many researchers have shown that band gap can be induced in the Bernal stacked bilayer graphene. Several methods have been used for the controlled growth of the Bernal staked bilayer graphene, but it is still challenging to control the growth process. In this paper, we synthesize the large area Bernal stacked bilayer graphene using multi heating zone low pressure chemical vapor deposition (LPCVD). The synthesized bilayer graphenes are characterized by Raman spectroscopy, optical microscope (OM), scanning electron microscopy (SEM). High resolution transmission electron microscopy (HRTEM) is used for the observation of atomic resolution image of the graphene layers.

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Epitaxial growth of Tin Oxide thin films deposited by powder sputtering method

  • 백은하;김소진;강현철
    • 한국진공학회:학술대회논문집
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    • 한국진공학회 2015년도 제49회 하계 정기학술대회 초록집
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    • pp.185.2-185.2
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    • 2015
  • Tin Oxide (SnO2) has been widely investigated as a transparent conducting oxide (TCO) and can be used in optoelectronic devices such as solar cell and flat-panel displays. In addition, it would be applicable to fabricating the wide bandgap semiconductor because of its bandgap of 3.6 eV. There have been concentrated on the improvement of optical properties, such as conductivity and transparency, by doping Indium Oxide and Gallium Oxide. Recently, with development of fabrication techniques, high-qulaity SnO2 epitaxial thin films have been studied and received much attention to produce the electronic devices such as sensor and light-emitting diode. In this study, powder sputtering method was employed to deposit epitaxial thin films on sapphire (0001) substrates. A commercial SnO2 powder was sputtered. The samples were prepared with varying the growth parameters such as gas environment and film thickness. Then, the samples were characterized by using XRD, SEM, AFM, and Raman spectroscopy measurements. The details of physical properties of epitaxial SnO2 thin films will be presented.

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고성능 박막태양전지를 위한 유리 기판 및 산화 아연 투명 전극의 2중 구조 표면 조직화 공정 연구 (Double Texturing of Glass Substrate and ZnO : Al Transparent Electrode Surfaces for High Performance Thin Film Solar Cells)

  • 강동원
    • 전기학회논문지
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    • 제66권8호
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    • pp.1230-1235
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    • 2017
  • We studied surface texture-etching of glass substrate by using reactive ion etching process with various working pressure (0.7~9.0 mT). With the increase in the pressure, a haze parameter, which means diffusive transmittance/total transmittance, was increased in overall wavelength regions, as measured by spectrophotometer. Also, atomic force microscopy (AFM) study also showed that the surface topography transformed from V-shaped, keen surface to U-shaped, flattened surface, which is beneficial for nanocrystalline silicon semiconductor growth with suppressing defective crack formation. The texture-etched ZnO:Al combined with textured glass exhibited pronounced haze properties that showed 60~90 % in overall spectral wavelength regions. This promising optical properties of double textured, transparent conducting substrate can be widely applied in silicon thin film photovoltaics and other optoelectronic devices.

인라인 스퍼터를 이용한 알루미늄 도핑된 산화아연 박막의 증착 및 특성 최적화 연구 (Deposition and Optimization of Al-doped ZnO Thin Films Fabricated by In-line Sputtering System)

  • 강동원
    • 전기학회논문지
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    • 제66권8호
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    • pp.1236-1241
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    • 2017
  • We deposited Al-doped ZnO (ZnO:Al) thin films on glass substrates ($200mm{\times}200mm$) by using in-line magnetron sputtering system. Effects of various deposition parameters such as working pressure, deposition power and substrate temperature on optoelectronic characteristics including surface-texture etching profiles were carefully investigated in this study. We found that relatively low working pressure and high deposition power offered to obtain enhanced conductivity and optical transmittance. Haze properties showed similar trend with the transmittance. Furthermore, surface-texture etching study exhibited good morphologies when the films were deposited at $200-300^{\circ}C$. On the basis of these optimizations, we could find the deposition region that produces highly transparent and conductive properties including efficient light scattering capability.

RF magnetron sputtering법으로 형성된 IGZO박막의 RF power에 따른 광학적 및 전기적 특성 (The optical and electrical properties of IGZO thin film fabricated by RF magnetron sputtering according to RF power)

  • 장야쥔;김홍배
    • 반도체디스플레이기술학회지
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    • 제12권1호
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    • pp.41-45
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    • 2013
  • IGZO transparent conductive thin films were widely used as transparent electrode of optoelectronic devices. We have studied the optical and electrical properties of IGZO thin films. The IGZO thin films were deposited on the corning 1737 glass by RF magnetron sputtering method. The RF power in sputtering process was varied as 25, 50, 75and 100 W, respectively. All of the thin films transmittance in the visible range was above 85%. XRD analysis showed that amorphous structure of the thin films without any peak. The thin films were electrically characterized by high mobility above $13.4cm^2/V{\cdot}s$, $7.0{\times}10^{19}cm^{-3}$ high carrier concentration and $6{\times}10^{-3}{\Omega}-cm$ low resistivity. By the studies we found that IGZO transparent thin film can be used as transparent electrodes in electronic devices.

Optical and Electroluminescence properties of PPV derivatives including different crosslink unit

  • Kim, Jae-Hong;Jang, Young-Seok;Jeong, Joon-Ho;Joo, Hyeong-Uk;Jung, Woo-Sik;Kim, Bong-Shik
    • 한국정보디스플레이학회:학술대회논문집
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    • 한국정보디스플레이학회 2005년도 International Meeting on Information Displayvol.II
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    • pp.1383-1385
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    • 2005
  • We synthesized new poly(p -phenylene vinylene) (PPV) derivatives including different portions of crosslink that could interconnect the backbone of PPV for application in optoelectronic devices such as lightemitting-diodes, photovoltaic cells, and lasers. The fluorescence and electroluminescence properties of PPV including crosslink were discussed with respect of their structure and length of crosslink unit.

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Fabrication and Characteristics Study of $n-Bi_2O_3$/n-Si Heterojunction

  • Ismail, Raid A.
    • JSTS:Journal of Semiconductor Technology and Science
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    • 제6권2호
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    • pp.119-123
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    • 2006
  • This work presents the fabrication and characteristics of $Bi_2O_3/Si$ heterojunction prepared by rapid thermal oxidation technique without any postdeposition annealing condition. The bismuth trioxide film was deposited onto monocrystalline Si and glass substrates by rapid thermal oxidation of bismuth film with aid of halogen lamp at $500^{\circ}C/\;45$ s in static air. The structural, optical and electrical properties of $Bi_2O_3$ film were investigated and compared with other published results. The structural investigation showed that the grown films are polycrystalline and multiphase (${\alpha}-Bi_2O_3$ and ${\beta}-Bi_2O_3$). Optical properties revealed that these films having direct optical band gap of 2.55 eV at 300 K with high transparency in visible and NIR regions. Dark and illuminated I-V, CV, and spectral responsivity of $Bi_2O_3/Si$ heterojunction were investigated and discussed.