• Proceedings of the Materials Research Society of Korea Conference
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• 2011.05a
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• pp.20.2-20.2
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• 2011

III-nitrides have attracted much attention for optoelectronic device applications whose emission wavelengths ranging from green to ultraviolet due to their wide band gap. However, due to the strong polarization properties of conventional c-plane III-nitrides, the built-in polarization-induced electric field limits the performance of optical devices. Therefore, there has been a renewed interest in the growth of nonpolar III-nitride semiconductors for polarization free heterostructure optoelectronic and electronic devices. However, the crystal and the optical quality of nonpolar/semipolar GaN have been poorer than those of conventional c-plane GaN, resulting in the relative poor optical and electrical properties of light emitting diodes (LEDs). In this presentation, I will discuss the growth and characterization of high quality nonpolar a-plane and semipolar (11-22) GaN and InGaN multiple quantum wells (MQWs) grown on r- and m-plane sapphire substrates, respectively, by using metalorganic chemical vapor deposition (MOCVD) without a low temperature GaN buffer layer. Especially, the epitaxial lateral overgrowth (ELO) technique will be also discussed to reduce the dislocation density and enhance the performance of nonpolar and semipolar GaN-based LEDs.

• Journal of the Microelectronics and Packaging Society
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• v.11 no.2 s.31
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• pp.11-16
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• 2004

Electronic devices are getting smaller due to integration of electronic chip, and heat generated in electronic devices can cause loss of performance and/or reliability of the devices. In this research, metals such as gold, nickel and copper are plated onto a porous membrane by electroless plating method to make an efficient micro-heatsinks. Electroless plating includes sensitization and activation steps in pre-treatment steps. A polycarbonate(PC) membrane was sensitizied, activated and deposited in each metal solution for plating. Among manufactured microfibrils, heat transfer and radiation properties of Ni-microfibril with high surface area were more effective than those of $Au^-$ and Cu-microfibril.

• Korean Journal of Materials Research
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• v.4 no.5
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• pp.516-523
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• 1994

The interfacial coherency of metal organic chemical vapor deposition grown InGaAsP/InP heterostructure wafers was examined and their influences on the optoelectronic properties were investigated in this study. (400) symmetric and (511) asymmetric reflections were employed to measure the lattice coherency. Existence of misfit dislocations was examined by x-ray topography and reverified by photoluminescence (PL) imaging. PI, measurements were performed, and higher PL intensity was obtained for elastically strained samples and lower intensity for plastically deformed samples. The highest PL intensity was obtained for the sample lattice matched at the growth temperature. PL full-width at half maximum (FWHM) was found to depend on the degree of lattice mismatch. A correlatior between x-ray FWHM and PL intensity was empirically established. The results presented demonstrate that the interfacial coherency is of primary significance in affecting the optoelectronic properties through elastic strain and plastic deformation.

• Korean Journal of Materials Research
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• v.33 no.6
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• pp.236-241
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• 2023

Solar cells based on p-conjugated donor-acceptor (D-A) organic molecular systems are a promising alternative to conventional electrical energy generation. D-A molecular systems, which have a triphenylamine (TPA) moiety linked with a benzothiadiazole (BTD) moiety, open the potential development of new small molecule donors for bulk heterojunction (BHJ) solar cells. Here, a series of donor-acceptor-π-acceptor (D-A-π-A) small molecule donors (SMD) derived from triphenylamine (TPA) donor and benzothiadiazole (BTD) acceptor building blocks, were designed for BHJ organic solar cells. The small molecule donors SMD1-4 were studied using density functional theory (DFT) and time dependent-DFT (TDDFT) methods, to understand the effect of cyano and fluorine group functionalization on their properties. The effect of structure alteration by cyano and fluorine group functionalization on the optoelectronic properties, the calculated highest occupied molecular orbitals (HOMOs) and lowest unoccupied molecular orbitals (LUMOs) and the HOMO-LUMO gaps were theoretically explored. The V_oc (open-circuit photovoltage) and fill factor (FF) for SMD1-4 were obtained with a PC₇₁BM acceptor, which showed that these organic small molecules are potential small molecule donors for organic bulk heterojunction solar cells.

• Proceedings of the Materials Research Society of Korea Conference
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• 2007.05a
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• pp.30.2-30.2
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• 2007

• Proceedings of the Materials Research Society of Korea Conference
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• 2011.05a
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• pp.237.2-237.2
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• 2011

SAW-ED를 이용하는 박막공정 기술을 통하여 나노레벨의 SWCNT 와 PEDOT의 thin film 및 hybrid화된 film구조를 얻을 수 있었다. SWCNT와 전도성고분자와의 hybridization을 통해 균일상의 표면 morphology를 갖는 고전도성 투명 필름을 제작하고, 이들의 전기광학적 성질을 확인하였다. SAW-ED를 이용하는 박막공정 기술은 나노입자 및 나노구조물의 박막화 패턴화를 포함하는 새로운 deposition 기술로서의 응용성을 가지고 있으며, 본 연구에서는 SWCNT와 전도성고분자를 이용하여 이를 확인하였다.

• Korean Journal of Materials Research
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• v.20 no.5
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• pp.257-261
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• 2010

A non-volatile resistive random access memory (RRAM) device with a Cr-doped $SrZrO_3/SrRuO_3$ bottom electrode heterostructure was fabricated on $SrTiO_3$ substrates using pulsed laser deposition. During the deposition process, the substrate temperature was $650^{\circ}C$ and the variable ambient oxygen pressure had a range of 50-250 mTorr. The sensitive dependences of the film structure on the processing oxygen pressure are important in controlling the bistable resistive switching of the Cr-doped $SrZrO_3$ film. Therefore, oxygen pressure plays a crucial role in determining electrical properties and film growth characteristics such as various microstructural defects and crystallization. Inside, the microstructure and crystallinity of the Cr-doped $SrZrO_3$ film by oxygen pressure were strong effects on the set, reset switching voltage of the Cr-doped $SrZrO_3$. The bistable switching is related to the defects and controls their number and structure. Therefore, the relation of defects generated and resistive switching behavior by oxygen pressure change will be discussed. We found that deposition conditions and ambient oxygen pressure highly affect the switching behavior. It is suggested that the interface between the top electrode and Cr-doped $SrZrO_3$ perovskite plays an important role in the resistive switching behavior. From I-V characteristics, a typical ON state resistance of $100-200\;{\Omega}$ and a typical OFF state resistance of $1-2\;k{\Omega}$, were observed. These transition metal-doped perovskite thin films can be used for memory device applications due to their high ON/OFF ratio, simple device structure, and non-volatility.

• Journal of Surface Science and Engineering
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• v.52 no.2
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• pp.90-95
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• 2019

Methylammonium lead bromide ($MAPbBr_3$) has attracted a lot of attention due to their excellent optoelectronic properties such as the compositional flexibility relevant to photoluminescence (PL) and UV-Vis absorbance spectrum, high diffusion length, and photoluminescence quantum yield (PLQY). Despite such advantages of organic-inorganic perovskite materials, more systematic study on manipulation of their optoelectronic properties in homo- or heterovalent metal ions doped halide perovskite nanocrystals is lacking. In this study, we systematically investigated the optical properties of colloidal $CH_3NH_3Pb_{1-x}Sn_xCl_{2x}Br_{3-2x}$ particles by addition of $SnCl_2$ into the typical methylammonium lead tribromide ($CH_3NH_3PbBr_3$) precursor solution. We found that only 1% addition of $SnCl_2$ shows a significant blue-shift from 540 nm to 420 nm in UV-Vis absorbance spectrum due to the strong quantum confinement effect. Furthermore, continuous blue-shift in photoluminescence spectra was observed as the amount of Cl increases. These experimental results provide new insights into the replacement of Pb within $MAPbBr_3$, required for the broadening of their application.

• Proceedings of the Optical Society of Korea Conference
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• 2004.07a
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• pp.4-5
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• 2004

• Journal of the Korean Physical Society
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• v.73 no.10
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• pp.1437-1443
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• 2018

In this work, $SnO_2$ modified with reduced graphene oxide (rGO) and carbon nanotubes (CNTs) separately and combined sensitized by using the co-precipitation method and their sensing behavior toward ethanol vapor at room temperature were investigated. An interdigitated electrode (IDE) gold substrate is very expensive compared to a fluorine doped tin oxide (FTO) substrate; hence, we used the latter to reduce the fabrication cost. The structure and the morphology of the studied materials were characterized by using differential thermal analyses (DTA) and thermogravimetric analysis (TGA), transmission electron microscope (TEM), X-ray diffraction (XRD), Fourier transform infrared (FTIR) spectroscopy, Brunauer-Emmett-Teller surface area and Barrett-Joyner-Halenda (BJH) pore size measurements. The studied composites were subjected to ethanol in its gas phase at concentrations from 10 to 200 ppm. The present composites showed high-performance sensitivity for many reasons: the incorporation of $SnO_2$ and CNTs which prevents the agglomeration of rGO sheets, the formation of a 3D mesopourus structure and an increase in the surface area. The decoration with rGO and CNTs led to more active sites, such as vacancies, which increased the adsorption of ethanol gas. In addition, the mesopore structure and the nano size of the $SnO_2$ particles allowed an efficient diffusion of gases to the active sites. Based on these results, the present composites should be considered as efficient and low-cost sensors for alcohol.