• Korean Journal of Optics and Photonics
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• v.18 no.2
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• pp.142-148
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• 2007

A mechanically induced long-period fiber grating array was fabricated and its transmission characteristics were measured. The grating away consisted of a rubber cover and a 45 cm metal bar with 10 grating groups. Each grating group was composed of 60 gratings. The period of the grating of the grating groups was increased by $10{\mu}m$ increments from $690{\mu}m$ to $780{\mu}m$. The long period fiber grating was induced when the pressure was applied on the long period grating array and the resonant wavelength depended on the position of applied pressure. The experimental results shows that this long period fiber grating away can be used as a various band rejection filter or a fiber optic sensor.

• Korean Journal of Optics and Photonics
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• v.18 no.2
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• pp.155-161
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• 2007

A new and simple method of 3-dimensional circuit modeling and analysis is proposed and verified experimentally for the first time by determining 3-dimensional current flow and 2-dimensional light distribution in blue InGaN/GaN multi-quantum well (MQW) light emitting diode (LED) devices. Circuit parameters of the LED consist of the resistance of the metallic film and epitaxial layer, and the intrinsic diode which represents the active region emitting the light. The circuit parameters are extracted from the transmission line model (TLM) and current-voltage relation. We applied the >> proposed method and extracted circuit parameters to obtain the light emission pattern in a top-surface emitting-type LED. The current spreading effect is analyzed theoretically and quantitatively with a variation of the resistance of metallic and epitaxial layers. The emitting-light distribution of the fabricated blue LED showed a good agreement with the analyzed result, which shows the dark emission intensity at the corner of the p-electrode.

• Journal of the Institute of Electronics Engineers of Korea TC
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• v.44 no.12
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• pp.63-72
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• 2007

This paper addresses the system development that can transfer data and TDM signals simultaneously by adding TDM pseudowires functions to E-PON system. E-PON technology is one of many technologies which can realize FTTH, has raised as next generation access network solution having both low-cost Ethernet technology and optical infrastructure. TDM pseudowires service is the new voice/data conversion technology which can transfer the existing TDM circuit switched voice and data over packet switching network. In this paper, this system can provide both data and TDM service without deteriorating QoS by adding TDM pseudowires service module to E-PON, and then implementing QoS control function. Therefore, the competitive system which can transfer both data and TDM signal, can be installed.

• Journal of the Korean Crystal Growth and Crystal Technology
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• v.10 no.6
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• pp.389-393
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• 2000

High-quality $Er^{3+}$ doped Mg : $LiNbO_3$single crystal fibers were grown by a micro-pulling down ($\mu$-PD) method. Single crystal fibers were pulled down through the nozzle, at a pulling down rate of 0.5 mm/min and using a Pt crucible with a nozzle 1 mm in diameter in air atmosphere. Defects such as bubbles, cracks and inclusions were not detected in any of the grown crystals. The optical transmission of Er : Mg : $LiNbO_3$crystal was measured and the energy levels of $Er_2O_3$ ion could be calculated. The photoluminescence spectrum of crystal fibers showed an energy band emission with the strongest line corresponding to the $^4I_{3/2}{\to}^4I_{15/2}$transition. The concentration dependence of the entire wavelength region emission intensity upon excitation intensity measured emission intensity for the 3 mol% MgO doped fibers was larger than that for the 1, 5 mol% MgO doped fibers.

• Korean Journal of Materials Research
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• v.21 no.6
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• pp.341-346
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• 2011

In this study, we inserted a Zn buffer layer into a AZO/p-type a-si:H layer interface in order to lower the contact resistance of the interface. For the Zn layer, the deposition was conducted at 5 nm, 7 nm and 10 nm using the rf-magnetron sputtering method. The results were compared to that of the AZO film to discuss the possibility of the Zn layer being used as a transparent conductive oxide thin film for application in the silicon heterojunction solar cell. We used the rf-magnetron sputtering method to fabricate Al 2 wt.% of Al-doped ZnO (AZO) film as a transparent conductive oxide (TCO). We analyzed the electro-optical properties of the ZnO as well as the interface properties of the AZO/p-type a-Si:H layer. After inserting a buffer layer into the AZO/p-type a-Si:H layers to enhance the interface properties, we measured the contact resistance of the layers using a CTLM (circular transmission line model) pattern, the depth profile of the layers using AES (auger electron spectroscopy), and the changes in the properties of the AZO thin film through heat treatment. We investigated the effects of the interface properties of the AZO/p-type a-Si:H layer on the characteristics of silicon heterojunction solar cells and the way to improve the interface properties. When depositing AZO thin film on a-Si layer, oxygen atoms are diffused from the AZO thin film towards the a-Si layer. Thus, the characteristics of the solar cells deteriorate due to the created oxide film. While a diffusion of Zn occurs toward the a-Si in the case of AZO used as TCO, the diffusion of In occurs toward a-Si in the case of ITO used as TCO.

• Korean Journal of Optics and Photonics
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• v.10 no.3
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• pp.226-232
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• 1999

We have investigated the output power performance of a continuous-wave chromium-doped YAG laser ($Cr^{4+}$:YAG laser), pumped by a Nd: YAG laser. With an output coupler of 1% transmission, we obtained as much as 400 mW of the average output power at 1.450 ${\mu}{\textrm}{m}$. The power slope efficiency of 8%, when the gain medium was cooled to 2$0^{\circ}C$. We tuned the wavelength of the $Cr^{4+}$:YAG laser, at pump power of 6 W, by using birefringent filter. As a result, lasing wavelength was tuned from 1.399 ${\mu}{\textrm}{m}$ to 1.532 ${\mu}{\textrm}{m}$, with the maximum output power of 340 mW at 1.4903 ${\mu}{\textrm}{m}$ and the linewidth was 0.21 nm.

• Korean Chemical Engineering Research
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• v.48 no.2
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• pp.178-184
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• 2010

The aim of this work is the fabrication of polyelectrolyte microcapsules composed of biocompatible polymers such as chitosan, heparin and alginate, to encapsulate the fluorescein isothiocyanate(FITC)-albumin, and to investigate the protein release behavior therefrom. Polyelectrolyte capsules with 4-layer structures could be prepared with biocompatible materials by oppositely charged adsorption using melamin-foramide as a template. Transmission electron microscope(TEM), scanning electron microscope(SEM) and optical microscope confirmed hollow capsule structures. Protein release before and after encapsulation was monitored with a UV-Vis spectrometer. Microcapsules have different behaviors depending on the kind of polyelectrolyte polymers, chitosan-heparin capsules or chitosan-alginate capsules. In conclusion, the polyelectrolyte multilayer shells can be switched between an open and closed state by means of tuning the pH value.

• The Journal of Korean Institute of Communications and Information Sciences
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• v.25 no.6A
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• pp.802-812
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• 2000

Multihop lightwave networks are the optical-fiber based local communication systems that employ WDM(Wavelength Division Multiplexing) technology to fully use the enormous fiber bandwidth without requiring any tunable tranceives. In this paper, we introduce a novel ShuffleNet topology, asymmetric bilayered ShuffleNet(ABS) topology as a multihop WDM network technique. For 1Gb/s transmission system, we compared ABS topology with previously reported ones in terms of common network parameters such as average number of hops, throughput, time delay, and network power function. Through the analysis, the performance of ABS topology was proven to be superior to the existing ones. To decrease the amount of hardware required for implementing ABS system, we also proposed a new WDM channel sharing scheme. For (2, 3) ShuffleNet topology system, the number of wavelengths needed in the system can be reduced dramatically from 96 to 4 by using new scheme.

• Proceedings of the Korean Institute of Surface Engineering Conference
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• 2001.11a
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• pp.35-35
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• 2001

agnesium Oxide (MgO) with a NaCI structure is well known to exhibit high secondary electron emission, excellent high temperature chemical stability, high thermal conductance and electrical insulating properties. For these reason MgO films have been widely used for a buffer layer of high $T_c$ superconducting and a protective layer for AC-plasma display panels to improve discharge characteristics and panel lifetime. Up to now MgO films have been synthesized by lE-beam evaporation, Molecular Beam Epitaxy (MBE) and Metalorganic Chemical Vapor Deposition (MOCVD), however there have been some limitations such as low film density and micro-cracks in films. Therefore magnetron sputtering process were emerged as predominant method to synthesis high density MgO films. In previous works, we designed and manufactured unbalanced magnetron source with high power density for the deposition of high quality MgO films. The magnetron discharges were sustained at the pressure of O.lmtorr with power density of $110W/\textrm{cm}^2$ and the maximum deposition rate was measured at $2.8\mu\textrm{m}/min$ for Cu films. In this study, the syntheses of MgO films were carried out by unbalanced magnetron sputtering with various $O_2$ partial pressure and specially target power densities, duty cycles and frequency using pulsed DC power supply. And also we investigated the plasma states with various $O_2$ partial pressure and pulsed DC conditions by Optical Emission Spectroscopy (OES). In order to confirm the relationships between plasma states and film properties such as microstructure and secondary electron emission coefficient were analyzed by X-Ray Diffraction(XRD), Transmission Electron Microscopy(TEM) and ${\gamma}-Focused$ Ion Beam (${\gamma}-FIB$).

• Journal of the Korea Institute of Information and Communication Engineering
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• v.8 no.3
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• pp.577-585
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• 2004

System Packet Interface Level 4 Phase(SPI-4.2) is an interface for packet and cell transfer between a physical layer(PHY) device and a link layer device, for aggregate bandwidths of OC-192 ATM and Packet Over Sonet/SDH(POS), as well as 10Gbps Ethernet applications. In this paper, we performs the research for SPI-4.2. Also we analyze the performance of SPI-4.2 interface module after modeling using C programming language. This paper shows that SPI-4.2 interface module with 512-word FIFO depth is able to be adapted for the offered loads to 97％ in random uniform traffic and 94％ in bursty traffic with bursty length 32. SPI-4.2 interface module can experience an performance degradation due to heavy overhead when it massively receives small size packets less than 14-byte. SPI-4.2 interface module is suited for line cards in gigabit/terabit routers, and optical cross-connect switches, and SONET/SDH-based transmission systems.