• Korean Journal of Optics and Photonics
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• v.3 no.4
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• pp.244-251
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• 1992

Buried Bragg filters of single mode $Si_{3}N_{4}$ rib waveguide with a cover layer of $SiO_{2}$ and grating at the interface of $Si_{3}N_{4}$ and $SiO_{2}$ are designed and fabricated. Etching of the grating on $Si_{3}N_{4}$ waveguide core by buffered HF showed uniform etching with good control up to 1 nm. This buried type of Bragg filters are immune to contamination of the surface of device. The mode index and bandwidth of filters are determined by measurements of the transmission spectrum of Bragg filters and compared with that of calculation. Waveguide Bragg filters loaded with the micro-heater of Cr film and the cladding of silicone rubber are made to control the Brag wavelength of the filter. As a result the filter wavelength of the device moved by 0.41 nm for 10 mA current to the shorter side of wavelength proportional to the square of the current.

• Journal of the Korean Solar Energy Society
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• v.33 no.2
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• pp.35-41
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• 2013

Dye-sensitized solar cell (DSC) allows light transmission and the application of various colors that make it especially suitable for building-integrated PV (BIPV) application. In order to apply DSC module into windows, it has to be panelized: DSC module should be protected with reinforced glass to the entire surface. Up to date, it seems to be common to make double glazing with DSC modules with air gaps between the glasses and the DSC modules. Few research has been conducted on the characteristics of various glazing types with DSC modules. This study aims to analyze the electrical performance of DSC modules according to panelizing method for glazing unit with DSC modules. The prototype of the DSC glazing that applied silicone filler between DSC modules and glasses was developed. The electrical performances of this type of DSC glazing with the filler and rather conventional double glazing with DSC modules were compared. Their performances were measured using a solar simulator that is suitable for DSC performance testing. The results indicated that the electrical performance of the filler type DSC glazing improved by 7% compared to that of the conventional DSC double glazing type.

• Korean Journal of Optics and Photonics
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• v.18 no.6
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• pp.441-446
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• 2007

Outcoupling efficiency of the OLED device is improved by incorporating both a microlens array and a diffractive grating pattern. The microlens array improves the light transmission at the interface of glass and air, and the diffractive grating outcouples the guided mode propagating at the waveguide, which consists of ITO and organic layers. By using the PDMS soft mold imprinting method, the microlens array is fabricated on the glass substrate. The diffractive grating pattern is directly fabricated on the ITO surface by using laser interferometry. A microlens array with a diameter of $10{\mu}m$ improves the light coupling efficiency by 22%. The diffractive grating made of TSMR photoresist enhances the luminance power efficiency by 41% at a current density of $20mA/cm^2$.

• Korean Journal of Optics and Photonics
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• v.16 no.3
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• pp.275-286
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• 2005

The performance of the InGaN LED's in terms of the photon extraction efficiency has been analyzed by the Monte Carlo photon simulation method. Simulation results show that the sidewall slanting scheme, which works well for the AlInGaP or InGaN/SiC LED, plays a very minimal role in InGaN/sapphire LED's. In contrast to InGaN/SiC LED's, the lower refractive index sapphire substrate restricts the generated photons to enter the substrate, minimizing the chances for the photons to be deflected by the slanted sidewalls of the epitaxial semiconductor layers that are usually very thin. The limited photon transmission to the sapphire substrate also degrades the. photon extraction efficiency especially in the epitaxial-side down mount. One approach to exploit the photon extraction potential of the epitaxial-side down mount may be to texture the substrate-epitaxy interface. In this case, randomized photon deflection off the textured interface directly increases the number of the photons entering the sapphire substrate, from which they easily couple out of the chip and thereby improving the photon extraction efficiency drastically.

• Korean Journal of Materials Research
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• v.9 no.11
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• pp.1123-1128
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• 1999

To investigate the effect of Sn on the recrystallization of Zr-based alloys. Zr-xSn (x=0.5, 0.8, 1.5, 2.0wt.%) alloys were manufactured to be the sheets through the defined manufacturing procedure. The specimens were annealed at $300^{\circ}C$ to $800^{\circ}C$ for 1 hour. The hardness, microstructure and precipitate of the alloys with the annealing temperature were investigated by using micro- knoop hardness tester, optical microscope(O/M) and transmission electron microscope(TEM), respectively. The cold-worked Zr-xSn alloys showed the typical behavior of the recovery. recrystallization, and grain growth. The recrystallization of Zr-xSn alloys occurred between $500^{\circ}C$ and $700^{\circ}C$. As the Sn content increased. the recrystallization temperature of the cold-worked alloys increased but their grain sizes after recrystallization decreased. It is suggested that the recrystallization of the cold- worked Zr alloys be occurred by the subgrain coalescence and growth mechanism.

• Korean Journal of Materials Research
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• v.17 no.4
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• pp.227-231
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• 2007

Transparent conducting indium tin oxide (ITO) films were deposited onto the Polyethersulfone (PES) substrate by using a magnetron sputter type negative metal ion source. In order to investigate the influence of cesium (Cs) partial pressure during deposition and annealing temperature on the optoelectrical properties of ITO/PES film the films were deposited under different Cs partial pressures and post deposition annealed under different annealing temperature from $100^{\circ}C$ to $170^{\circ}C$ for 20 min at $3\;{\times}\;10^{-1}$ Pa. Optoeleetrical properties of ITO films deposited without intentional substrate heating was influenced strongly by the Cs partial pressure and the Cs partial pressure of $1.5\;{\times}\;10^{-3}$ Pa was characterized as an optimal Cs flow condition. By increasing post-deposition vacuum annealing temperature both optical transmission in visible light region and electrical conductivity of ITO films were increased. Atomic force microscopy (AFM) micrographs showed that the surface roughness also varied with post-deposition vacuum annealing temperature.

• Proceedings of the Korean Vacuum Society Conference
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• 2013.02a
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• pp.630-630
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• 2013

Recently, atomically smooth hexagonal boron nitride(h-BN) known as a white graphene has drawn great attention since the discovery of graphene. h-BN is a III-V compound and has a honeycomb structure very similar to graphene with smaller lattice mismatch. Because of strong covalent sp2bonds like graphene, h-BN provides a high thermal conductivity and mechanical strength as well as chemical stability of h-BN superior to graphene. While graphene has a high electrical conductivity, h-BN has a highly dielectric property as an insulator with optical band gap up to 6eV. Similar to the graphene, h-BN can be applied to a variety of field, such as gate dielectric layers/substrate, ultraviolet emitter, transparent membrane, and protective coatings. However, up until recently, obtaining and controlling good quality monolayer h-BN layers have been too difficult and challenging. In this work, we investigate the controlled synthesis of h-BN layers according to the growth condition, time, temperature, and gas partial pressure. h-BN is obtained by using chemical vapor deposition on Cu foil with ammonia borane (BH3NH3) as a source for h-BN. Scanning Transmission Electron Microscopy (STEM, JEOL-JEM-ARM200F) is used for imaging and structural analysis of h-BN layer. Sample's surface morphology is characterized by Field emission scanning electron microscopy (SEM, JEOL JSM-7100F). h-BN is analyzed by Raman spectroscopy (HORIBA, ARAMIS) and its topographic variations by Atomic force microscopy (AFM, Park Systems XE-100).

• The Journal of the Institute of Internet, Broadcasting and Communication
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• v.12 no.1
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• pp.165-172
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• 2012

Integrated-optic asymmetric Mach-Zehnder interferometer at $1.3{\mu}m$ wavelength and segmented electrode structure were designed and fabricated as a sensing part for the electric-field measurement system. The device was simulated based on the BPM software and fabricated utilizing Ti-diffused $LiNbO_3$ channel optical waveguides and lumped-type electrodes. Almost half-maximum power transmission was observed for asymmetric interferometers with ${\pi}/2$ intrinsic phase difference. Expected experimental measurements were observed for 1KHz electrical signal bandwidth.

• Journal of the Institute of Electronics Engineers of Korea SC
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• v.44 no.3
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• pp.45-50
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• 2007

We present a auto compensating quantum key distribution system based on optical fiber at 1550nm. In the quantum key transmission system, main control board and phase modulation driving board are fabricated for auto controlling quantum key distribution(QKD). We tested the single photon counts per dark counts for a single photon detector, quantum key distribution rate($R_{sift}$) and the quantum bit error rate (QBER). Quantum bit error rate of 3.5% in 25km QKD is obtained. This system is commercially available.

• Journal of the Korean Crystal Growth and Crystal Technology
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• v.10 no.1
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• pp.5-12
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• 2000

As a semiconductor material for electronic devices operated under extreme environmental conditions, silicon carbides (SiCs) have been intensively studied because of their excellent electrical, thermal and other physical properties. The growth characteristics of single- crystalline 6H-SiC homoepitaxial layers grown by a thermal chemical vapor deposition (CVD) were investigated. Especially, the successful growth condition of 6H-SiC homoepitaxial layers using a SiC-uncoated graphite susceptor that utilized Mo-plates was obtained. The CVD growth was performed in an RF-induction heated atmospheric pressure chamber and carried out using off-oriented ($3.5^{\circ}$tilt) substrates from the (0001) basal plane in the <110> direction with the Si-face side of the wafer. In order to investigate the crystallinity of grown epilayers, Nomarski optical microscopy, transmittance spectra, Raman spectroscopy, XRD, Photoluninescence (PL) and transmission electron microscopy (TEM) were utilized. The best quality of 6H-SiC homoepitaxial layers was observed in conditions of growth temperature $1500^{\circ}C$ and C/Si flow ratio 2.0 of $C_3H_8$ 0.2 sccm & $SiH_4$ 0.3 sccm.