• Korean Journal of Optics and Photonics
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• v.13 no.4
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• pp.347-355
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• 2002

We have constructed a high efficiency and broad tunable cw Ti:sapphire laser with a four-mirror symmetric Z-type laser cavity to increase the laser usability. From theoretical analyses and experimental data for a symmetric Z-type laser cavity containing a Kerr medium, the cavity mode size and the Kerr-lens mode-locking (KLM) strength for KLM lasers can be confirmed as function of the position in the cavity, the intracavity laser power, and the stability parameter. As a result, the slope efficiency and the maximum average output power of cw Ti:sapphire laser at 5 W pumping power of Ar-ion laser were 31.3% and 1420 ㎽ respectively. The tunablility was ranged from 730 ㎚ to 908 ㎚ with average output power above 700 ㎽. We obtained the KLM operation easily by self-aperturing effect in the Kerr medium and the slope efficiency and the maximum average output power of KLM Ti:sapphire laser was 16% and 550 ㎽ respectively. The spectral bandwidth was 33 ㎚ at the center wavelength of 807 ㎚ and the pulse width was 27 fs with a repetition rate of 82 ㎒.

• Journal of the Korean Society of Fisheries and Ocean Technology
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• v.24 no.2
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• pp.83-93
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• 1988

Recent Experimental results show that the J integral can be effectively used to obtain a valid parameter for predicting plane strain and plane stress fracture. However, only a few research results have been reported for the effect of thickness where the plane strain state can not be assumed. A purpose of this study is to find the behavior of fracture touhness and tearing modulus varing the specimen thickness. The type of specimen in the present study is compact tension (CT). The thicknesses of the low carbon steel specimens that are used in the experiments are 5, 10, 15, 20 and 25mm. The measurement of crack length is taken by optical measurements method. From the study, the followings are found; 1) The fracture toughness and the tearing modulus which are obtained by using Yoon's and Simpson's formula show more conservative than that by using Rice's and Merkel's. 2) The fracture toughness is increase in specimen thickness which is reached 15mm. Beyond this thickness the fracture toughness is decreased in specimen thickness. 3) In the case of CT specimen with the thickness ranging from 5 to 25mm, the tearing modulus which is applied the same J integral equation is almost constant. 4) By using Yoon's formula, the correlation of the plane slress fracture toughness J sub(C) with specimen thickness B is expressed as the following formula. J sub(C)/J sub(IC)=1.7-15.1(B/W)+112.9(B/W) super(2) -301.3(B/W) super(3) +260.6(B/W) super(4)

• Korean Journal of Remote Sensing
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• v.29 no.4
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• pp.415-421
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• 2013

A new approach to retrieve the single-scattering albedo (SSA) of Asian dust plume, mixed with pollution particles, using multi-wavelength Raman lidar system was suggested in this study. Asian dust plume was separated as dust and non-dust particle (i.e. spherical particle) by the particle depolarization ratio at 532 nm. The vertical profiles of optical properties (the particle extinction coefficient at 355 and 532 nm and backscatter coefficient at 355, 532 and 1064 nm) for non-dust particle were used as input parameter for the inversion algorithm. The inversion algorithm provides the vertical distribution of microphysical properties of non-dust particle only so that the estimation of the SSA for the Asian dust in mixing state was suggested in this study. In order to estimate the SSA for the mixed Asian dust, we combined the SSA of non-dust particles retrieved by the inversion algorithms with assumed the SSA of 0.96 at 532 nm for dust. The retrieved SSA of Asian dust plume by lidar data was compared with the Aerosol Robotics Network (AERONET) retrieved values and showed good agreement.

• Journal of the Korean Vacuum Society
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• v.21 no.1
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• pp.29-35
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• 2012

The Hydrogenated silicon nitride (SiNx:H) using plasma enhanced chemical vapor deposition is widely used in photovoltaic industry as an antireflection coating and passivation layer. In the high temperature firing process, the $SiN_x:H$ film should not change the properties for its use as high quality surface layer in crystalline silicon solar cells. Initially PECVD-$SiN_x:H$ film trends were investigated by varying the deposition parameters (temperature, electrode gap, RF power, gas flow rate etc.) to optimize the process parameter conditions. Then by varying gas ratios ($NH_3/SiH_4$), the hydrogenated silicon nitride films were analyzed for its optical, electrical, chemical and surface passivation properties. The $SiN_x:H$ films of refractive indices 1.90~2.20 were obtained. The film deposited with the gas ratio of 3.6 (Refractive index=1.98) showed the best properties in after firing process condition. The single crystalline silicon solar cells fabricated according to optimized gas ratio (R=3.6) condition on large area substrate of size $156{\times}156mm$ (Pseudo square) was found to have the conversion efficiency as high as 17.2%. Optimized hydrogenated silicon nitride surface layer and high efficiency crystalline silicon solar cells fabrication sequence has also been explained in this study.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2008.11a
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• pp.363-363
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• 2008

The development of dry etching process for sapphire wafer with plasma has been key issues for the opto-electric devices. The challenges are increasing control and obtaining low plasma induced-damage because an unwanted scattering of radiation is caused by the spatial disorder of pattern and variation of surface roughness. The plasma-induced damages during plasma etching process can be classified as impurity contamination of residual etch products or bonding disruption in lattice due to charged particle bombardment. Therefor, fine pattern technology with low damaged etching process and high etch rate are urgently needed. Until now, there are a lot of reports on the etching of sapphire wafer with using $Cl_2$/Ar, $BCl_3$/Ar, HBr/Ar and so on [1]. However, the etch behavior of sapphire wafer have investigated with variation of only one parameter while other parameters are fixed. In this study, we investigated the effect of pressure and other parameters on the etch rate and the selectivity. We selected $BCl_3$ as an etch ant because $BCl_3$ plasmas are widely used in etching process of oxide materials. In plasma, the $BCl_3$ molecule can be dissociated into B radical, $B^+$ ion, Cl radical and $Cl^+$ ion. However, the $BCl_3$ molecule can be dissociated into B radical or $B^+$ ion easier than Cl radical or $Cl^+$ ion. First, we evaluated the etch behaviors of sapphire wafer in $BCl_3$/additive gases (Ar, $N_2,Cl_2$) gases. The behavior of etch rate of sapphire substrate was monitored as a function of additive gas ratio to $BCl_3$ based plasma, total flow rate, r.f. power, d.c. bias under different pressures of 5 mTorr, 10 mTorr, 20 mTorr and 30 mTorr. The etch rates of sapphire wafer, $SiO_2$ and PR were measured with using alpha step surface profiler. In order to understand the changes of radicals, volume density of Cl, B radical and BCl molecule were investigated with optical emission spectroscopy (OES). The chemical states of $Al_2O_3$ thin films were studied with energy dispersive X-ray (EDX) and depth profile anlysis of auger electron spectroscopy (AES). The enhancement of sapphire substrate can be explained by the reactive ion etching mechanism with the competition of the formation of volatile $AlCl_3$, $Al_2Cl_6$ or $BOCl_3$ and the sputter effect by energetic ions.

• Proceedings of the Korean Vacuum Society Conference
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• 1999.07a
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• pp.211-211
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• 1999

Titanium nitride (TiN) thin films have useful properties including high hardness, good electrical conductivity, high melting point, and chemical inertness. The applications have included wear-resistant hard coatings on machine tools and bearings, decorative coating making use of the golden color, thermal control coatings for widows, and erosion resistant coatings for spacecraft plasma probes. For all these applications as feature sizes shrink and aspect ratios grow, the issue of good step coverage becomes increasingly important. It is therefore essential to manufacture conformal coatings of TiN. The growth of TiN thin films by chemical vapor deposition (CVD) is of great interest for achieving conformal deposition. The most widely used precursor for TiN is TiCl4 and NH3. However, chlorine impurity in the as-grown films and relatively high deposition temperature (>$600^{\circ}C$) are considered major drawbacks from actual device fabrication. To overcome these problems, recently, MOCVD processes including plasma assisted have been suggested. In this study, therefore, we have doposited Ti(C, N) thin films on Si(100) and D2 steel substrates in the temperature range of 150-30$0^{\circ}C$ using tetrakis diethylamido titanium (TDEAT) and titanium isopropoxide (TIP) by pulsed DC plamsa enhanced metal-organic chemical vapor deposition (PEMOCVD) method. Polycrystalline Ti(C, N) thin films were successfully grown on either D2 steel or Si(100) surfaces at temperature as low as 15$0^{\circ}C$. Compositions of the as-grown films were determined with XPS and RBS. From XPS analysis, thin films of Ti(C, N) with low oxygen concentration were obtained. RBS data were also confirmed the changes of stoichiometry and microhardness of our films. Radical formation and ionization behaviors in plasma are analyzed by optical emission spectroscopy (OES) at various pulsed bias and gases conditions. H2 and He+H2 gases are used as carrier gases to compare plasma parameter and the effect of N2 and NH3 gases as reactive gas is also evaluated in reduction of C content of the films. In this study, we fond that He and H2 mixture gas is very effective in enhancing ionization of radicals, especially N resulting is high hardness. The higher hardness of film is obtained to be ca. 1700 HK 0.01 but it depends on gas species and bias voltage. The proper process is evident for H and N2 gas atmosphere and bias voltage of 600V. However, NH3 gas highly reduces formation of CN radical, thereby decreasing C content of Ti(C, N) thin films in a great deal. Compared to PVD TiN films, the Ti(C, N) film grown by PEMOCVD has very good conformability; the step coverage exceeds 85% with an aspect ratio of more than 3.

• Journal of the Korean Institute of Illuminating and Electrical Installation Engineers
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• v.20 no.7
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• pp.6-13
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• 2006

Tin doped indium oxide(ITO) and Al doped zinc oxide(ZnO:Al) films, which are widely used as a transparent conductor in optoelectronic devices, were prepared by using the capacitively coupled DC magnetron sputtering method. ITO and ZnO:Al films with the optimum growth conditions showed each resistivity of $1.67{\times}10^{-3}[{\Omega}-cm],\;2.2{\times}10^{-3}[{\Omega}-cm]$ and transmittance of 89.61[%], 90.88[%] in the wavelength range of the visible spectrum. The two types of 5 inch-PDP cells with ZnO:Al and ITO transparent electrodes were made under the same manufacturing conditions. The PDP cell with ZnO:Al film was optimally operated in the mixing gas rate of Ne(base)-Xe(8[%]), and at gas pressure of 400[Torr]. It also shows the average measured brightness of $836[cd/m^2]$ at voltage range of $200{\sim}300$[V]. Luminous efficiency, one of the key parameter for high brightness and low power consumption, ranges from 1.2 to 1.6[lm/W] with increasing frequency of ac power supplier from 10 to 50[Khz]. The brightness and luminous efficiency are lower than those with ITO electrode by about 10[%]. However, these values are considered to be enough for the normal operation of PDP TV.

• Journal of The Korean Astronomical Society
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• v.37 no.4
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• pp.199-203
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• 2004

The gas response to a proposed spiral stellar pattern for our Galaxy is presented here as calculated via 2D hydrodynamic calculations utilizing the ZEUS code in the disk plane. The locus is that found by Drimmel (2000) from emission profiles in the K band and at 240 ${\mu}m$. The self-consistency of the stellar spiral pattern was studied in previous work (see Martos et al. 2004). It is a sensitive function of the pattern rotation speed, $\Omega$p, among other parameters which include the mass in the spiral and its pitch angle. Here we further discuss the complex gaseous response found there for plausible values of $\Omega$p in our Galaxy, and argue that its value must be close to $20 km s^{-l}\;kpc^{-1}$ from the strong self-consistency criterion and other recent, independent studies which depend on such parameter. However, other values of $\Omega$p that have been used in the literature are explored to study the gas response to the stellar (K band) 2-armed pattern. For our best fit values, the gaseous response to the 2-armed pattern displayed in the K band is a four-armed pattern with complex features in the interarm regions. This response resembles the optical arms observed in the Milky Way and other galaxies with the smooth underlying two-armed pattern of the old stellar disk populations in our interpretation. The complex gaseous response appears to be related to resonances in stellar orbits. Among them, the 4:1 resonance is paramount for the axisymmetric Galactic model employed, and the set of parameters explored. In the regime seemingly proper to our Galaxy, the spiral forcing appears to be marginally strong in the sense that the 4:1 resonance terminates the stellar pattern, despite its relatively low amplitude. In current work underway, the response for low values of $\Omega$p tends to remove most of the rich structure found for the optimal self-consistent model and the gaseous pattern is ring-like. For higher values than the optimal, more features and a multi-arm structure appears.

• The Journal of Korean Institute of Electromagnetic Engineering and Science
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• v.13 no.7
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• pp.716-725
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• 2002

In this paper, we showed the applicability of power symmetric MSSI(Mid-Span Spectral Inversion) to the long-haul WDM system with the channel interference due to FWM(Four Wave Mixing). And we showed the degree of performance improvement. We used 1 dB EOP(Eye-Opening Penalty) criterion so as to evaluate the degree of compensation dependent on the variation of chirp parameter of optical pulse for the various input power in high speed tansmission system. And we evaluated the maximum input power of channel be able to be the signal to crosstalk noise (SNR) above 20 dB in the transmission link with the channel interference due to FWM. Consequently the proposed MSSI compensation method is capable to transmitting the total 68 WDM channels simultaneously with a 0.4 nm channel spacing and 5.3 dBm maximum input power in a 10 Gbps transmission link. Therefore the proposed power symmetric MSSI compensation method may be very useful for the implementation of long-haul wideband WDM transmission systems with relatively high power and improved performance.

• Journal of the Korean Ceramic Society
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• v.38 no.11
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• pp.1008-1014
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• 2001

Nanosize YIG powders added by Cerium which is exellent element in magneto-optical effect were synthesized by Sol-Gel method using Ethylene Glycol solvent. In 120 to 150 minute reaction time, stable sol solution which showed no change in viscosity, pH, and aging time was obtained. Monolithic YIG was synthesized at 80$0^{\circ}C$ with DTA and XRD measurement and its lattice parameter had a tendency to increase from 12.3921 $\AA$. Increasing annealing temperature from 80$0^{\circ}C$ to 105$0^{\circ}C$, average particle size was in the range of 40 nm to 330 nm. Saturation magnetization (M$_{s}$) value was increased from 18.37 to 21.25 emu/g due to enhancement of YIG crystallity and decreasing of orthoferrite phase. On the other hand, coercivity (H$_{c}$) value increased up to 90$0^{\circ}C$ and then decreased above 90$0^{\circ}C$. With increasing Ce addition, coercivity was almost not changed but saturation magnetization value was maximum at Ce 0.1 mol% and then decreased because of increasing a orthoferrite amount. Also, curie temperature (T$_{c}$) of YIG were not changed with Ce addition.ion.