• Korean Journal of Materials Research
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• v.27 no.12
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• pp.705-709
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• 2017

The electronic and optical characteristics of molybdenum disulphide ($MoS_2$) film significantly vary with its thickness, and thus a rapid and accurate estimation of the number of $MoS_2$ layers is critical in practical applications as well as in basic researches. Various existing methods are currently available for the thickness measurement, but each has drawbacks. Transmission electron microscopy allows actual counting of the $MoS_2$ layers, but is very complicated and requires destructive processing of the sample to the point where it will no longer be useable after characterization. Atomic force microscopy, particularly when operated in the tapping mode, is likewise time-consuming and suffers from certain anomalies caused by an improperly chosen set point, that is, free amplitude in air for the cantilever. Raman spectroscopy is a quick characterization method for identifying one to a few layers, but the laser irradiation causes structural degradation of the $MoS_2$. Optical microscopy works only when $MoS_2$ is on a silicon substrate covered with $SiO_2$ of 100~300 nm thickness. The last two optical methods are commonly limited in resolution to the micrometer range due to the diffraction limits of light. We report here a method of measuring the distribution of the number of $MoS_2$ layers using a low voltage field emission electron microscope with acceleration voltages no greater than 1 kV. We found a linear relationship between the FESEM contrast and the number of $MoS_2$ layers. This method can be used to characterize $MoS_2$ samples at nanometer-level spatial resolution, which is below the limits of other methods.

• ETRI Journal
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• v.29 no.5
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• pp.633-640
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• 2007

We report an experimental demonstration of 40 Gbps all-optical 3R regeneration with all-optical clock recovery based on InP semiconductor devices. We also obtain alloptical non-return-to-zero to return-to-zero (NRZ-to-RZ) format conversion using the recovered clock signal at 10 Gbps and 40 Gbps. It leads to a good performance using a Mach-Zehnder interferometric wavelength converter and a self-pulsating laser diode (LD). The self-pulsating LD serves a recovered clock, which has an rms timing jitter as low as sub-picosecond. In the case of 3R regeneration of RZ data, we achieve a 1.0 dB power penalty at $10^{-9}$ BER after demultiplexing 40 Gbps to 10 Gbps with an eletroabsorption modulator. The regenerated 3R data shows stable error-free operation with no BER floor for all channels. The combination of these functional devices provides all-optical 3R regeneration with NRZ-to-RZ conversion.

• Proceedings of the Korea Air Pollution Research Association Conference
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• 2009.10a
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• pp.475-476
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• 2009

• Proceedings of the Korean Operations and Management Science Society Conference
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• 1991.10a
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• pp.379-401
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• 1991

A comprehensive computer software has been implemented in conjunction with the software for volumetric error generator, to assess simulation on specific measurement tasks. The simulation algorithms have been developed for major measurement tasks, such as step gauge, ring gauge, sphere gauge, and cylinder gauge simulations etc. Verification and practical applications of the developed module have shown its efficiency and validity.

• Proceedings of the Korean Society of Laser Processing Conference
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• 2005.06a
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• pp.102-103
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• 2005

Using THz time-domain spectroscopy, we study plasmonic band gaps in periodic metal arrays of slits. Femtosecnd machining system guarantees good quality sub millimeter structures for THz spectroscopy. Fabry-Perot effect enhances the transmission when the two resonances cross but does not alter the surface plasmon peak positions.

• International Journal of Precision Engineering and Manufacturing
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• v.8 no.4
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• pp.22-26
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• 2007

We describe a new way of implementing absolute displacement measurements by exploiting the optical comb of a femtosecond pulse laser as a wavelength ruler, The optical comb is stabilized by locking both the repetition rate and the carrier offset frequency to an Rb clock of frequency standard. Multiwavelength interferometry is then performed using the quasi-monochromatic beams of well-defined generated wavelengths by tuning an external cavity laser diode consecutively to preselected light modes of the optical comb. This scheme of wavelength synthesizing allows the measurement of absolute distances with a high precision that is traceable to the definition of time. The achievable wavelength uncertainty is $1.9{\times}10^{-10}$, which allows the absolute heights of gauge blocks to be determined with an overall calibration uncertainty of 15 nm (k = 1). These results demonstrate a successful industrial application of an optical frequency synthesis employing a femtosecond laser, a technique that offers many possibilities for performing precision length metrology that is traceable to the well-defined international definition of time.

• Journal of Biomedical Engineering Research
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• v.38 no.3
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• pp.111-115
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• 2017

Blood pressure is one of the important vital signs for monitoring the medical condition of a patient. Automated NIBP(non-invasive blood pressure) monitoring devices calculate systolic and diastolic blood pressures from the oscillation in cuff pressure caused by a pulsation of an artery. To validate the NIBP devices, we developed a simulator to supply the oscillometric waveforms obtained from human subjects. The simulator provided pressure pulses to device-under-test and device readings were compared to the auscultatory references. Fully automated simulation system including OCR(optical character recognition) were developed and used for NIBP monitoring devices. The validation results using the simulator agreed well with previous clinical validation. More validation studies using the standardized oscillometric waveforms would be required for the replacement of clinical trials to validate a new automated NIBP monitoring device.

• Analytical Science and Technology
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• v.13 no.2
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• pp.222-228
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• 2000

A detector for monitoring carbon monoxide (CO) in ambient air by nondispersive infrared (NDIR) spectroscopy has been developed and investigated its sensitivity and stability. The essential parts of the absorption cell are three spherical concave mirrors so as to improve the sensitivity by increasing the light path length in the cell. The radius and center of curvature of mirrors and position in the cell was calculated by computer simulation in order that the light path length may be 16m into the 50cm cell. The number of traversals and optical path properties were confirmed by laser beam alignment in transparent absorption cell. The photoconductive type lead selenide (PbSe) was used as CO sensing material, which was cooled to increase the responsibility by thermoelectric cooling method. The detection limit and span drift of the developed CO detector was 0.24ppm and 0.03ppm(v/v) respectively.

• Proceedings of the Korean Vacuum Society Conference
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• 2015.08a
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• pp.132-132
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• 2015

Virtual metrology (VM) model based on plasma information (PI) parameter for C4F8 plasma-assisted oxide etching processes is developed to predict and monitor the process results such as an etching rate with improved performance. To apply fault detection and classification (FDC) or advanced process control (APC) models on to the real mass production lines efficiently, high performance VM model is certainly required and principal component regression (PCR) is preferred technique for VM modeling despite this method requires many number of data set to obtain statistically guaranteed accuracy. In this study, as an effective method to include the 'good information' representing parameter into the VM model, PI parameters are introduced and applied for the etch rate prediction. By the adoption of PI parameters of b-, q-factors and surface passivation parameters as PCs into the PCR based VM model, information about the reactions in the plasma volume, surface, and sheath regions can be efficiently included into the VM model; thus, the performance of VM is secured even for insufficient data set provided cases. For mass production data of 350 wafers, developed PI based VM (PI-VM) model was satisfied required prediction accuracy of industry in C4F8 plasma-assisted oxide etching process.

• Transactions of the Korean Society of Mechanical Engineers A
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• v.30 no.12 s.255
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• pp.1611-1617
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• 2006

A compact and two-dimensional atomic force microscope (AFM) using an orthogonal sample scanner, a calibrated homodyne laser interferometer and a commercial AFM head was developed for use in the nano-metrology field. The x and y position of the sample with respect to the tip are acquired by using the laser interferometer in the open-loop state, when each z data point of the AFM head is taken. The sample scanner which has a motion amplifying mechanism was designed to move a sample up to $100{\times}100{\mu}m^2$ in orthogonal way, which means less crosstalk between axes. Moreover, the rotational errors between axes are measured to ensure the accuracy of the calibrated AFM within the full scanning range. The conventional homodyne laser interferometer was used to measure the x and y displacements of the sample and compensated via an X-ray interferometer to reduce the nonlinearity of the optical interferometer. The repeatability of the calibrated AFM was measured to sub-nm within a few hundred nm scanning range.