• Title/Summary/Keyword: optical data storage, near-field scanning optical microscope

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Multiplexed, Stack-Wise, and Parallel Recording of Near-Field Binary Holograms (근접장 이진 홀로그램의 다중화, 다층화 및 병렬 저장)

  • Kim, Gyeong-Yeom;Gang, Jin-Gu;Lee, Byeong-Ho
    • The Transactions of the Korean Institute of Electrical Engineers C
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    • v.51 no.8
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    • pp.382-389
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    • 2002
  • We present experimental results on the multiplexed and stack-wise recording of near-field holograms. Experiments on angular multiplexing show that the angular selectivity of near-field hologram is better than that of the conventional hologram. Experiments on stack-wise recording prove that near-fields originated from sub-diffraction-limit-size objects could be stored in a photorefractive crystal at 2mm apart from the crystal surface. In addition, to improve the data access and transfer time, a silicon nano-aperture array was introduced and applied to the recording of near-field holograms.

Characteristics of Nanolithography Process on Polymer Thin-film using Near-field Scanning Optical Microscope (근접장현미경을 이용한 폴리머박막 나노리쏘그라피 공정의 특성분석)

  • 권상진;김필규;장원석;정성호
    • Proceedings of the Korean Society of Precision Engineering Conference
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    • 2004.10a
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    • pp.590-595
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    • 2004
  • The shape and size variations of the nanopatterns produced on a positive photoresist using a near-field scanning optical microscope(NSOM) are investigated with respect to the process variables. A cantilever type nanoprobe having a 100nm aperture at the apex of the pyramidal tip is used with the NSOM and a He-Cd laser at a wavelength of 442nm as the illumination source. Patterning characteristics are examined for different laser beam power at the entrance side of the aperture( $P_{in}$ ), scan speed of the piezo stage(V), repeated scanning over the same pattern, and operation modes of the NSOM(DC and AC modes). The pattern size remained almost the same for equal linear energy density. Pattern size decreased for lower laser beam power and greater scan speed, leading to a minimum pattern width of around 50nm at $P_{in}$ =1.2$\mu$W and V=12$\mu$m/. Direct writing of an arbitrary pattern with a line width of about 150nm was demonstrated to verify the feasibility of this technique for nanomask fabrication. Application on high-density data storage using azopolymer is discussed at the end.

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Characteristics of nanolithograpy process on polymer thin-film using near-field scanning optical microscope with a He-Cd laser (He-Cd 레이저와 근접장현미경을 이용한 폴리머박막 나노리소그라피 공정의 특성분석)

  • Kwon S. J.;Kim P. K.;Chun C. M.;Kim D. Y.;Chang W. S.;Jeong S. H.
    • Laser Solutions
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    • v.7 no.3
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    • pp.37-46
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    • 2004
  • The shape and size variations of the nanopatterns produced on a polymer film using a near-field scanning optical microscope(NSOM) are investigated with respect to the process variables. A cantilever type nanoprobe having a 100nm aperture at the apex of the pyramidal tip is used with the NSOM and a He-Cd laser at a wavelength of 442nm as the illumination source. Patterning characteristics are examined for different laser beam power at the entrance side of the aperture($P_{in}$), scan speed of the piezo stage(V), repeated scanning over the same pattern, and operation modes of the NSOM(DC and AC modes). The pattern size remained almost the same for equal linear energy density. Pattern size decreased for lower laser beam power and greater scan speed, leading to a minimum pattern width of around 50nm at $P_{in}=1.2{\mu}W\;and\;V=12{\mu}m/s$. Direct writing of an arbitrary pattern with a line width of about 150nm was demonstrated to verify the feasibility of this technique for nanomask fabrication. Application on high-density data storage is discussed.

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Resonant Transmission of a Rectangular Waveguide Probe with H-type Small Aperture (H-형태 소형 개구를 가진 직사각형 도파관 탐침의 공진 투과)

  • Ko, Ji-Hwan;Cho, Young-Ki
    • The Journal of Korean Institute of Electromagnetic Engineering and Science
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    • v.24 no.12
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    • pp.1198-1204
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    • 2013
  • As a microwave near field probe for near field scanning optical microscope(NSOM) system, H-shaped(ridge type) small aperture is proposed and its performances from the viewpoints of the transmission efficiency(transmission cross section) and spatial confinement(beam spot size) are compared with those of the previous narrow rectangular aperture type. While the transmission efficiencies are comparable to each other for the two structures, the transmitted beam spot size for the proposed H-shaped aperture is much smaller than that for the previous rectangular aperture. This strong point of the H-shaped aperture is expected to significantly improve near-field optical applications such as optical data storage, nanolithography and nanomicroscopy. It is also observed that the transmission efficiency can be improved if the coupling aperture is implemented in the type of the transmission cavity.

Fabrication of Nano Dot and Line Arrays Using NSOM Lithography

  • Kwon Sangjin;Kim Pilgyu;Jeong Sungho;Chang Wonseok;Chun Chaemin;Kim Dong-Yu
    • Journal of the Optical Society of Korea
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    • v.9 no.1
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    • pp.16-21
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    • 2005
  • Using a cantilever type nanoprobe having a 100㎚m aperture at the apex of the pyramidal tip of a near-field scanning optical microscope (NSOM), nanopatterning of polymer films are conducted. Two different types of polymer, namely a positive photoresist (DPR-i5500) and an azopolymer (Poly disperse orange-3), spincoated on a silicon wafer are used as the substrate. A He-Cd laser with a wavelength of 442㎚ is employed as the illumination source. The optical near-field produced at the tip of the nanoprobe induces a photochemical reaction on the irradiated region, leading to the fabrication of nanostructures below the diffraction limit of the laser light. By controlling the process parameters properly, nanopatterns as small as 100㎚ are produced on both the photoresist and azopolymer samples. The shape and size variations of the nanopatterns are examined with respect to the key process parameters such as laser beam power, irradiation time or scanning speed of the probe, operation modes of the NSOM (DC and AC modes), etc. The characteristic features during the fabrication of ordered structures such as dot or line arrays using NSOM lithography are investigated. Not only the direct writing of nano array structures on the polymer films but also the fabrication of NSOM-written patterns on the silicon substrate were investigated by introducing a passivation layer over the silicon surface. Possible application of thereby developed NSOM lithography technology to the fabrication of data storage is discussed.