• 제목/요약/키워드: optical bandgap

검색결과 196건 처리시간 0.022초

Physical Properties of MoS2

  • 이창구
    • 한국진공학회:학술대회논문집
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    • 한국진공학회 2013년도 제45회 하계 정기학술대회 초록집
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    • pp.100-100
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    • 2013
  • Among recently discovered 2-dimensional materials, molybdenum disulfide has fascinating physical properties. It is atomically thin and is a semiconductor with with a similar level of bandgap with silicon. Especially, its properties get interesting when it becomes thinner. Its bandgap goes through bandgap transition from indirect to direct gap. Also its gap size increases as its thickness decreases. In this talk, I am going to present our recent work on characterization of its electrical and optical properties. We used Raman and PL spectroscopy to observe its property dependence on thickness. We fabricated electrical devices to study optimal condition for MoS2 devices. Also we synthesized large-area MoS2 films for devices applications.

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광섬유 격자와 포토닉 밴드갭 광섬유를 이용한 아세틸렌가스 검출 (Optical Acetylene Gas Detection using a Photonic Bandgap Fiber and Fiber Bragg Grating)

  • 이윤규;이경식
    • 대한전자공학회논문지SD
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    • 제47권7호
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    • pp.23-29
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    • 2010
  • 할로우 코어 포토닉 밴드갭 광섬유(hollow core photonic bandgap fiber, HC-PBGF)와 광섬유 브래그 격자(fiber Bragg grating, FBG)를 이용하여 새로운 형태의 가스 검출 방식을 제안하였다. 제안하는 가스 측정 방식에서는 할로우 코어 포토닉밴드갭 광섬유에 채워진 가스의 흡수 스펙트럼을 우선 측정하고, 광섬유 브래그 격자를 파장 변조함으로써 얻어진 신호로부터 가스 농도에 대한 정보를 얻을 수 있다. 가스 측정 실험에서는 2m의 할로우 코어 포토닉 밴드갭 광섬유와 중심 파장이 1539.02nm인 광섬유 브래그 격자를 사용하였으며, 광섬유 브래그 격자의 반사파장을 1539.3nm에서 1539.6nm까지 2Hz의 주기로 가변하였다. 제안하는 가스센서는 2.5%, 5%의 아세틸렌가스를 선별적으로 잘 검출할 수 있다는 것을 확인할 수 있었다.

Characterizations of i-a-Si:H and p-a-SiC:H Film using ICP-CVD Method to the Fabrication of Large-area Heterojunction Silicon Solar Cells

  • Jeong, Chae-Hwan;Jeon, Min-Sung;Kamisako, Koichi
    • Transactions on Electrical and Electronic Materials
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    • 제9권2호
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    • pp.73-78
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    • 2008
  • We investigated for comparison of large-area i-a-Si:H and p-a-SiC:H film quality like thickness uniformity, optical bandgap and surface roughness using both ICP-CVD and PECVD on the large-area substrate(diameter of 100 mm). As a whole, films using ICP-CVD could be achieved much uniform thickness and bandgap of that using PECVD. For i-a-Si:H films, its uniformity of thickness and optical bandgap were 2.8 % and 0.38 %, respectively. Also, thickness and optical bandgap of p-a-SiC:H films using ICP-CVD could be obtained at 1.8 % and 0.3 %, respectively. In case of surface roughness, average surface roughness (below 5 nm) of ICP-CVD film could be much better than that (below 30 nm) of PECVD film. HIT solar cell with 2 wt%-AZO/p-a-SiC:H/i-a-Si:H/c-Si/Ag structure was fabricated and characterized with diameter of 152.3 mm in this large-area ICP-CVD system. Conversion efficiency of 9.123 % was achieved with a practical area of $100\;mm\;{\times}\;100\;mm$, which can show the potential to fabrication of the large-area solar cell using ICP-CVD method.

Photonic Bandgap Bragg Fibers: A New Platform for Realizing application-specific Specialty Optical Fibers and Components

  • Pal, Bishnu P.
    • 한국광학회:학술대회논문집
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    • 한국광학회 2006년도 동계학술발표회 논문집
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    • pp.87-88
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    • 2006
  • Bragg fibers, consisting of a low index core (including air) surrounded by a series of periodic layers of alternate high and low refractive index materials, each being higher than that of the core, form a 1D photonic bandgap (PBG). In view of the multitude of individual physical parameters that characterize a Bragg fiber, they offer a wide choice of parametric avenues to tailor their propagation characteristics. Owing to their unique PBG guidance mechanism, Bragg fibers indeed exhibit unusual dispersion characteristics that are otherwise nearly impossible to achieve in conventional silica fibers. Solid core Bragg fibers, amenable to fabrication by the highly mature MCVD technology, could be designed to realize broadband supercontinuum light. This talk would review our recent works on modeling of propagation characteristics, dispersion tailoring in them for applications as metro as well as dispersion compensating fibers and also as supercontinuum light generators.

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Synthesis and Characterization of Bandgap-modulated Organic Lead Halide Single Crystals

  • Park, Dae Young;Byun, Hye Ryung;Lee, A Young;Choi, Ho Min;Lim, Seong Chu;Jeong, Mun Seok
    • Journal of the Korean Physical Society
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    • 제73권11호
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    • pp.1716-1724
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    • 2018
  • Single crystal of organic lead halide ($CH_3NH_3PbX_3$; $CH_3NH^+_3$ = methylammonium (MA), $X=Cl^-$, $Br^-$, $I^-$) is the best candidate for material intrinsic property studies due to no grain boundary and high crystal quality than the film having a lot of grain boundary and surface defects. The representative crystallization methods are inverse temperature crystallization (ITC) and anti-solvent vapor assisted crystallization (AVC). Herein, we report bandgap modulated organic lead halide single crystals having a bandgap ranging from ~ 2.1 eV to ~ 3 eV with ITC and AVC methods. The bandgap modulation was achieved by controlling the solvents and chloride-to-bromide ratio. Structural, optical and compositional properties of prepared crystals were characterized. The results show that the crystals synthesized by the two crystallization methods have similar properties, but the halide ratios in the crystals synthesized by the AVC method are controlled more quantitatively than the crystals synthesized by ITC.

Atomistic simulation of surface passivated wurtzite nanowires: electronic bandstructure and optical emission

  • Chimalgi, Vinay U.;Nishat, Md Rezaul Karim;Yalavarthi, Krishna K.;Ahmed, Shaikh S.
    • Advances in nano research
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    • 제2권3호
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    • pp.157-172
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    • 2014
  • The three-dimensional Nano-Electronic Modeling toolkit (NEMO 3-D) is an open source software package that allows the atomistic calculation of single-particle electronic states and optical response of various semiconductor structures including bulk materials, quantum dots, impurities, quantum wires, quantum wells and nanocrystals containing millions of atoms. This paper, first, describes a software module introduced in the NEMO 3-D toolkit for the calculation of electronic bandstructure and interband optical transitions in nanowires having wurtzite crystal symmetry. The energetics (Hamiltonian) of the quantum system under study is described via the tight-binding (TB) formalism (including $sp^3$, $sp^3s^*$ and $sp^3d^5s^*$ models as appropriate). Emphasis has been given in the treatment of surface atoms that, if left unpassivated, can lead to the creation of energy states within the bandgap of the sample. Furthermore, the developed software has been validated via the calculation of: a) modulation of the energy bandgap and the effective masses in [0001] oriented wurtzite nanowires as compared to the experimentally reported values in bulk structures, and b) the localization of wavefunctions and the optical anisotropy in GaN/AlN disk-in-wire nanowires.

마그네트론 스퍼터를 이용한 Ar 가스 유량 조절에 따른 GZO의 특성 변화 (Effect of Ar Flow Ratio on the Characteristics of Ga-Doped ZnO Grown by RF Magnetron Sputtering)

  • 정영진;이승진;손창식
    • 한국신재생에너지학회:학술대회논문집
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    • 한국신재생에너지학회 2011년도 추계학술대회 초록집
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    • pp.62.1-62.1
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    • 2011
  • The structural, optical, and electrical properties of Ga-doped ZnO (GZO) thin films on glass substrates grown by radio-frequency(RF) magnetron sputtering were investigated. The flow ratio of Ar was varied as a deposition parameter for growing high-quality GZO thin films. The structural properties and surface morphologies of GZO were characterized by the X-ray diffraction. To analyze the optical properties of GZO, the optical absorbance was measured in the wavelength range of 300-1100 nm by using UV-VIS spectrophotometer. The optical transmittance, absorption coefficient, and optical bandgap energy of GZO thin films were calculated from the measured data. The crystallinity of GZO thin films is improved and the bandgap energy increases from 3.08 to 3.23eV with the increasing Ar flow ratio from 10 to 100 sccm. The average transmittance of the films is over 88% in the visible range. The lowest resistivity of the GZO is $6.215{\times}10^{-4}{\Omega}{\cdot}cm$ and the hall mobility increases with the increasing Ar flow ratio. We can optimize the characteristics of GZO as a transparent electrode for thin film solar cells by controlling Ar flow ratio during deposition process.

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기계화학적 방법으로 합성한 Cu2Zn(Sn,Ge)S4 나노결정과 이를 이용하여 제조한 태양전지 (Mechanochemically Synthesized Cu2Zn(Sn,Ge)S4 Nanocrystals and Their Application to Solar Cells)

  • 박보인;이승용;이도권
    • Current Photovoltaic Research
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    • 제4권3호
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    • pp.114-118
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    • 2016
  • $Cu_{1.8}Zn_{1.2}(Sn_{1-x}Ge_x)S_4$ (CZTGeS) nanocrystals were mechanochemically synthesized from elemental precursor powders without using any organic solvents and any additives. The composition of CZTGeS nanocrystals were systematically varied with different Ge mole fraction (x) from 0.1 to 0.9. The XRD, Raman spectroscopy, high-resolution TEM, and diffuse reflectance studies show that the as-synthesized CZTGeS nanocrystals exhibited consistent changes in various structural and optical properties as a function of x, such as lattice parameters, wave numbers for $A_1$ Raman vibration mode, interplanar distances (d-spacing), and optical bandgap energies. The bandgap energy of the synthesized CZTGeS nanocrystals gradually increases from 1.40 to 1.61 eV with increasing x from 0.1 to 0.9, demonstrating that Ge-doping is useful means to tune the bandgap of mechanochemically synthesized nanocrystals-based kesterite thin-film solar cells. The preliminary solar cell performance is presented with an efficiency of 3.66%.

Relationship between Exciton Lifetime and Energy Transfer in Light Emitting Polymers

  • Yu, Jae-Woong;Kim, Jai-Kyeong;Cho, Hyun-Nam;Kim, Dong-Young;Song, Nam-Woong;Kim, Dong-Ho;Kim, Chung-Yup
    • 한국정보디스플레이학회:학술대회논문집
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    • 한국정보디스플레이학회 2000년도 제1회 학술대회 논문집
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    • pp.209-210
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    • 2000
  • The energy transfer from photoexcited polyvinylcarbazole (PVK) chromophores with a bandgap of 3.7 eV as a donor to fluorophores of poly(dihexylfluorenevinylene) (PDHFV) or poly(dihexylfluorenedihexoxyphenylenevinylene) (PDHFHPV) as an acceptor in bilayered specimens should be carried out since the spectral overlap pairs fulfills the requirement for the $F{\"{o}}rster-type$ condition. However, the energy transfer rate from the chromophores with a wider bandgap to the fluorophores with a narrower bandgap is proved to be strongly dependent on the lifetime ratio between the excitons.

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