• 한국광학회지
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• 제8권3호
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• pp.213-217
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• 1997

n형과 p형 GaAs의 도핑에 따른 형광과 시간 분해 형광특성을 조사하였다. 도핑의 농도가 증가할수록 형광의 피크 위치는 p형은 낮은 에너지 쪽으로, n형은 높은 에너지 쪽으로 이동함을 관찰하였다. 이것은 p형은 띠간격 좁아짐 효과가 우세하게 작용하며, n형은 Burstein-Moss효과가 지배적으로 작용하기 때문인 것으로 해석된다. 또한, 도핑의 농도가 증가하면 형광의 소멸시간과 상승시간이 감소하며, p형의 형광소멸시간과 상승시간이 n형보다 더 빠르게 나타났다. 따라서 도핑된 GaAs에서 형광소멸시간과 상승시간은 다수 운반자의 종류와 농도에 의존함을 알 수 있으며, 운반자-운반자 상호작용이 에너지 이완 과정에 중요한 역할을 함을 알 수 있었다.

• 한국진공학회지
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• 제12권S1호
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• pp.113-115
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• 2003

We investigate transmission of light in nanoscale structures. We present spatial and temporal domain measurements of the dephasing of surface plasmon excitations in metal films with periodic nano-hole arrays. By probing coherent spatial SP propagation lengths of a few f1. $\mu$m and an ultrafast decay of the SP polarization on a 10 fs timescale, we demonstrate that the SP transmission peaks are homogeneously broadened by the SP radiative lifetime. The pronounced wavelength and hole size dependence of the dephasing rate shows that the microscopic origin of the conversion of SP into light is a Rayleigh-like scattering by the periodic hole array. We have experimentally studied the dephasing of surface plasmon excitations in metallic nano-hole arrays. By relating nanoscopic SP propagation, ultrafast light transmission and optical spectra, we demonstrate that the transmission spectra of these plasmonic bandgap structures are homogeneously broadened. The spectral line shape and dephasing time are dominated by Rayleigh scattering of SP into light and can varied over a wide range by controlling the resonance energy and/or hole radius. This opens the way towards designing SP nano-optic devices and spatially and spectrally tailoring light -matter interactions on nanometer length scales.

• 한국전기전자재료학회논문지
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• 제29권6호
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• pp.376-379
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• 2016

In this paper, the efficiency improvement of the heterojunction with intrinsic thin layer (HIT) solar cells is obtained by optimization process of p-type a-SiC:H as emitter. The optoelectronic of p-type a-SiC:H layers including the optical band-gap and conductivity under the methane gas content variation is conducted in detail. A significant increase in the Jsc by $1mA/cm^2$ and Voc by 30 mV are attributed to enhanced photon-absorption due to broader band-gap of p-a-SiC:H and reduced band-offsets at p-side interface, respectively of HIT solar cells.

• 한국전기전자재료학회논문지
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• 제29권6호
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• pp.359-364
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• 2016

NiO serves as a window layer for Si photoelectric devices. Due to the wide energy bandgap of NiO, high optical transparency (over 80%) was achieved and applied for Si photoelectric devices. Due to the high the high mobility, the heterojunction device (Al/n-Si/$SiO_2$/p-NiO/ITO) provide ultimately fast photoresponses of rising time of $38.33{\mu}s$ and falling time of $39.25{\mu}s$, respectively. This functional NiO layer would provide benefits for high-performing photoelectric devices, including photodetectors and solar cells.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2007년도 추계학술대회 논문집
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• pp.323-324
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• 2007

Investigation of improving the properties of UV photodetector which uses the wide bandgap of ZnO are under active progress. In this paper, transparent conducting aluminum-doped Zinc oxide films(AZO) were prepared by rf magnetron sputtering on glass(corning 1737) and p-Si substrate, were then annealed at temperature $400^{\circ}C$ for 2hr. The AZO thin films were deposited by RF sputtering system. HF power and work pressure is 120 W and 15 mTorr, respectively, and the purity of AZO target is 5N. The AZO thin films were deposited at 300, 400, $500^{\circ}C$, and $600^{\circ}C$. For sample deposited at $400^{\circ}C$, we observed best $V_r-I_{ph}$ of 0.94 mA and good transmittance.

• 한국진공학회지
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• 제15권6호
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• pp.624-629
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• 2006

Nd을 이온주입한 GaN를 이용하여 GaN와 Nd 이온 사이의 에너지 전달과정을 분석하고 Mg을 도핑 하였을 때의 효과를 보았다. Nd의 $^4F_{3/2}{\rightarrow}^4I_{9/2}$ 전이에 대하여 Photoluminescence (PL)와 PL excitation 방법을 이용하여 에너지 전달 경로에 적어도 3가지 이상의 밴드갭 내의 trap이 있음을 확인하였다. Mg이 doping된 GaN : Nd에서는 isoelectronic trap으로 생각되는 특정한 trap의 수가 증가되었음이 관측되었고 이로 인해 전기적으로 여기될 시료의 특성을 보여줄 밴드갭보다 큰 에너지를 이용한 여기 상태의 효율이 더욱 높아짐을 알 수 있었다.

• Applied Science and Convergence Technology
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• 제26권6호
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• pp.208-213
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• 2017

Flexible opto-electronic devices are developed on the insulating layer deposited stainless steel (STS) substrates. The silicon dioxide ($SiO_2$) material as the diffusion barrier of Fe and Cr atoms in addition to the electrical insulation between the electronic device and STS is processed using the plasma enhanced chemical vapor deposition method. Noble silver (Ag) films of approximately 100 nm thickness have been formed on $SiO_2$ deposited STS substrates by E-beam evaporation technique. The films then were annealed at $650^{\circ}C$ for 20 min using the rapid thermal annealing (RTA) technique. It was investigated the variation of the surface morphology due to the interaction between Ag films and $SiO_2$ layers after the RTA treatment. The results showed the movement of Si atoms in silver film from $SiO_2$. In addition, the structural investigation of Ag annealed at $650^{\circ}C$ indicated that the Ag film has the material property of p-type semiconductor and the bandgap of approximately 1 eV. Also, the films annealed at $650^{\circ}C$ showed reflection with sinusoidal oscillations due to optical interference of multiple reflections originated from films and substrate surfaces. Such changes can be attributed to both formation of $SiO_2$ on Ag film surface and agglomeration of silver film between particles due to annealing.

• 센서학회지
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• 제30권5호
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• pp.279-285
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• 2021

Recently, cesium tellurium iodine (Cs₂TeI₆) has emerged as an inorganic halide perovskite material with potential application in optoelectronic devices due to its high absorption coefficient, suitable bandgap and because it consists of nontoxic and earth-abundant elements. However, studies on its fabrication process as well as photoresponse characteristics are limited. In this study, a simple and effective method is introduced for the synthesis of Cs₂TeI₆ thin films by a two-step dry process. A Cs₂TeI₆-based lateral photosensor was fabricated, and its photoresponse characteristics were explored under laser illuminations of four different wavelengths in the visible range: 405, 450, 520, and 655 nm. The initial photosensing results suggest potential application and can lead to more promising studies of Cs₂TeI₆ film in optoelectronics.

• Advances in nano research
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• 제16권1호
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• pp.53-69
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• 2024

Advancements in the technology of building materials has led to diverse applications of nanomaterials with the aim to monitor concrete structures. While there are myriad instances of the use of nanoparticles in building materials, the production of smart nano cement-composites is often expensive. Thereupon, this research aims to discover a sustainable nanomaterial from tyre waste using the pyrolysis process as part of the green manufacturing circle. Here, Nano Structure Tyre-Char (NSTC) is introduced as a zero-dimension carbon-based nanoparticle. The NSTC particles were characterized using various standard characterization techniques. Several salient results for the NSTC particles were obtained using microscopic and spectroscopic techniques. The size of the particles as well as that of the agglomerates were reduced significantly using the milling process and the results were validated through a scanning electron microscope. The crystallite size and crystallinity were found to be ~35nm and 10.42%, respectively. The direct bandgap value of 5.93eV and good optical conductivity at 786 nm were obtained from the ultra violet visible spectroscopy measurements. The thermal analysis reveals the presence of a substantial amount of carbon, the rate of maximum weight loss, and the two stages of phase transformation. The FT-Raman confirms the presence of carboxyl groups and a ID/IG ratio of 0.83. Water contact angle around 140° on the surface implies the highly hydrophobic nature of the material and its low surface energy. This characteristic process assists to obtain a sustainable nanomaterial from waste tyres, contributing to the development of a smart building material.

• Bulletin of the Korean Chemical Society
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• 제32권9호
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• pp.3453-3458
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• 2011

The $Mg_xZn_{1-x}O$ thin films with the various content ratio ranging from 0 to 0.4 were prepared by sol-gel spincoating method. To investigate the effects of content ratio on the structural and optical properties of the $Mg_xZn_{1-x}O$ thin films, scanning electron microscopy (SEM), X-ray diffraction (XRD), and photoluminescence (PL) were carried out. With increase in the content ratio, the grain size of the $Mg_xZn_{1-x}O$ thin films was increased, however, at the content ratio above 0.2, MgO particles with cubic structure were formed on the surface of the $Mg_xZn_{1-x}O$ thin films, indicating that the Mg content exceeded its solubility limit in the thin films. The residual stress of the $Mg_xZn_{1-x}O$ thin films is increased with increase in the Mg mole fraction. In the PL investigations, the bandgap and the activation energy of the $Mg_xZn_{1-x}O$ thin films was increased with the Mg mole fraction.