• Bulletin of the Korean Chemical Society
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• v.34 no.4
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• pp.1081-1088
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• 2013

Two new metal-free organic dyes bridged by anthracene-mediated ${\pi}$-conjugated moieties were successfully synthesized for use in a dye-sensitized solar cell (DSSC). A N,N-diphenylthiophen-2-amine unit in these dyes acts as an electron donor, while a (E)-2-cyano-3-(thiophen-2-yl)acrylic acid group acts as an electron acceptor and an anchoring group to the $TiO_2$ electrode. The photovoltaic properties of (E)-2-cyano-3-(5-((10-(5-(diphenylamino)thiophen-2-yl)anthracen-9-yl)ethynyl)thiophen-2-yl)acrylic acid (DPATAT) and (E)-2-cyano-3-(5'-((10-(5-(diphenylamino)thiophen-2-yl)anthracen-9-yl)ethynyl)-2,2'-bithiophen-5-yl)acrylic acid (DPATABT) were investigated to identify the effect of conjugation length between electron donor and acceptor on the DSSC performance. By introducing an anthracene moiety into the dye structure, together with a triple bond and thiophene moieties for fine-tuning of molecular configurations and for broadening the absorption spectra, the short-circuit photocurrent densities ($J_{sc}$), and open-circuit photovoltages ($V_{oc}$) of DSSCs were improved. The improvement of $J_{sc}$ in DSSC made of DPATABT might be attributed to much broader absorption spectrum and higher molecular extinction coefficient (${\varepsilon}$) in the visible wavelength range. The DPATABT-based DSSC showed the highest power conversion efficiency (PCE) of 3.34% (${\eta}_{max}$ = 3.70%) under AM 1.5 illumination ($100mWcm^{-2}$) in a photoactive area of $0.41cm^2$, with the $J_{sc}$ of $7.89mAcm^{-2}$, the $V_{oc}$ of 0.59 V, and the fill factor (FF) of 72%. In brief, the solar cell performance with DPATABT was found to be better than that of DPATAT-based DSSC.

• Korean Journal of Materials Research
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• v.23 no.1
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• pp.35-40
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• 2013

In this study, the influence on the surface passivation properties of crystalline silicon according to silicon wafer thickness, and the correlation with a-Si:H/c-Si heterojunction solar cell performances were investigated. The wafers passivated by p(n)-doped a-Si:H layers show poor passivation properties because of the doping elements, such as boron(B) and phosphorous(P), which result in a low minority carrier lifetime (MCLT). A decrease in open circuit voltage ($V_{oc}$) was observed when the wafer thickness was thinned from $170{\mu}m$ to $50{\mu}m$. On the other hand, wafers incorporating intrinsic (i) a-Si:H as a passivation layer showed high quality passivation of a-Si:H/c-Si. The implied $V_{oc}$ of the ITO/p a-Si:H/i a-Si:H/n c-Si wafer/i a-Si:H/n a-Si:H/ITO stacked layers was 0.715 V for $50{\mu}m$ c-Si substrate, and 0.704 V for $170{\mu}m$ c-Si. The $V_{oc}$ in the heterojunction solar cells increased with decreases in the substrate thickness. The high quality passivation property on the c-Si led to an increasing of $V_{oc}$ in the thinner wafer. Short circuit current decreased as the substrate became thinner because of the low optical absorption for long wavelength light. In this paper, we show that high quality passivation of c-Si plays a role in heterojunction solar cells and is important in the development of thinner wafer technology.

• Polymer(Korea)
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• v.33 no.3
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• pp.191-197
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• 2009

We have investigated the effect of strong p-type organic semiconductor $F_4$-TCNQ-doped CuPc hole transport layer on the performance of p-i-n type bulk heterojunction photovoltaic device with ITO/PEDOT:PSS/CuPc: $F_4$-TCNQ(5 wt%)/CuPc:C60(blending ratio l:l)/C60/BCP/LiF/Al, architecture fabricated via vacuum deposition process, and have evaluated the J-V characteristics, short-circuit current ($J_{sc}$), open-circuit voltage($V_{oc}$), fill factor(FF), and power conversion efficiency(${\eta}_e$) of the device. By doping $F_4$-TCNQ into CuPc hole transport layer, increased absorption intensity in absorption spectra, uniform dispersion of organic molecules in the layer, surface uniformity of the layer, and enhanced injection currents improved the current photovoltaic device with power conversion efficiency(${\eta}_e$) of 0.16%, which is still low value compared to silicone solar cell indicating that many efforts should be made to improve organic photovoltaic devices.

• Solar Energy
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• v.13 no.1
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• pp.49-58
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• 1993

[ $CdS_{0.46}Se_{0.54}$ ] single crystal was grown by a sublimation method. The crystal structure and the temperature dependence of carrier density and mobility of $CdS_{0.46}Se_{0.54}$ single crystal were studied. Heterojunction solar cells of $n-CdS_{0.46}Se_{0.54}/p-Cu_{2-X}S_{0.46}Se_{0.54}$ were fabricated by the substitution reaction. The spectral response, the J-V characteristics and the conversion efficiency of the $n-CdS_{0.46}Se_{0.54}/p-Cu_{2-X}S_{0.46}Se_{0.54}$ heterojunction solar cells were studied. The open-circuit voltage, short-circuit density, fill factor and conversion efficiency of $n-CdS_{0.46}Se_{0.54}/p-Cu_{2-X}S_{0.46}Se_{0.54}$ heterojunction solar cells under $80mW/cm^2$ illumination were found to be 0.48V, $21mA/cm^2$, 0.75 and 9.5%, respectively.

• Solar Energy
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• v.11 no.3
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• pp.74-83
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• 1991

In this study, the (p)ZnTe/(n)Si solar cell and (n)CdS-(p)ZnTe/(n)Si poly-junction thin film are fabricated by vaccum deposition method at the substrate temperature of $200{\pm}1^{\circ}C$ and then their electrical properties are investigated and compared each other. The test results from the (p)ZnTe/(n)Si solar cell the (n)CdS-(p)ZnTe/(n)Si poly-junction thin fiim under the irradiation of solar energy $100[mW/cm^2]$ are as follows; Short circuit current$[mA/cm^2]$ (p)ZnTe/(n)Si:28 (n)CdS-(p)ZnTe/(n)Si:6.5 Open circuit voltage[mV] (p)ZnTe/(n)Si:450 (n)CdS-(p)ZnTe/(n)Si:250 Fill factor (p)ZnTe/(n)Si:0.65 (n)CdS-(p)ZnTe/(n)Si:0.27 Efficiency[%] (p)ZnTe/(n)Si:8.19 (n)CdS-(p)ZnTe/(n)Si:2.3 The thin film characteristics can be improved by annealing. But the (p)ZnTe/(n)Si solar cell are deteriorated at temperatures above $470^{\circ}C$ for annealing time longer than 15[min] and the (n)CdS-(p)ZnTe/(n)Si thin film are deteriorated at temperature about $580^{\circ}C$ for longer than 15[min]. It is found that the sheet resistance decreases with the increase of annealing temperature.

• Journal of the Korean Vacuum Society
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• v.21 no.4
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• pp.219-224
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• 2012

We study for long-term performance of amorphous silicon solar cells under light exposure. The performance is predicted with a kinetic model in which the carrier lifetimes are determined by the defect density. In particular, the kinetic model is described by the stretched-exponential relaxation of defects to reach equilibrium. In this report, we simulate the light-induced degradation of the amorphous silicon solar cells with the kinetic model and AMPS-1D computer program. And data measured for outdoor performances of various solar cells are compared with the simulated results. This study focuses on examining the light-induced degradation for the following amorphous silicon pin solar cells: thickness${\approx}$300 nm, built-in potential${\approx}$1.05 V, defect density (at t=0)${\approx}5{\times}10^{15}cm^{-3}$, short-circuit current density (at t=0)${\approx}15.8mA/cm^2$, fill factor (at t=0)${\approx}0.691$, open-circuit voltage (at t=0)${\approx}0.865V$, conversion efficiency (at t=0)${\approx}9.50%$.

• Proceedings of the Korean Vacuum Society Conference
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• 2010.02a
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• pp.153-153
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• 2010

p-i-n 형 비정질 실리콘 박막 태양전지에서 p층은 창물질(window material)로서 전기 전도도가 크고, 빛 흡수가 적어야한다. p층의 두께가 얇으면 p층 전체가 depletion layer가 되고 충분한 diffusion potential을 얻을 수 없어 open-circuit voltage ($V_{oc}$)가 작아진다. 반대로 p층 두께가 두꺼워지면 빛 흡수가 증가하고, 표면 재결합이 문제가 되어 변환효율이 감소한다. 밴드갭이 큰 물질로 창층을 제작하게 되면 보다 짧은 파장의 입사광이 직접 i층을 비추므로 Short-circuit current ($I_{sc}$) 와 fill factor를 증가시킬 수 있다. 하여 본 연구에서는 기존의 창층으로 사용되는 Boron을 doping한 p-type a-Si:H 대신에 $N_2O$를 첨가한 p-type a-$SiO_x$:H의 $N_2O$ flow rate에 따른 밴드갭의 변화에 관한 연구를 수행하였다. p-type a-$SiO_x$:H Layer는 $SiH_4$, $H_2$, $N_2O$, $B_2H_6$ 가스를 혼합하여 증착하게 되는데 $SiH_4$, 가스와 $H_2$ 가스의 혼합비는 1:20, $B_2H_6$ 농도는 0.5%로 고정 하였으며 $N_2O$의 flow rate을 가변하며 증착하였다. $N_2O$의 가변조건은 5에서 50sccm으로 가변하여 증착하며 일반적으로 사용되는 RF-PECVD (13.56MHz)를 이용하였고 증착 온도는 175도, 전극간의 거리는 40mm, 파워와 압력은 30W, 700mTorr로 고정하여 진행하였다. 전기적 특성을 알아보기 위해 eagle 2000 Glass를 사용하였고 구조적 특성은 p-type wafer를 사용하여 각각 대략 200nm의 두께로 증착하였다. 증착 두께는 Ellipsometry를 이용하였으며 전기 전도도는 Agilent사의 4156c를 구조적특성은 FT-IR을 사용하여 측정하였다. Conductivity(${\sigma}_d$)는 $N_2O$가 증가함에 따라 $8.73\;{\times}\;10^{-6}$에서 $5.06\;{\times}\;10^{-7}$으로 감소하였고 optical bandgap ($E_{opt}$)은 1.71eV에서 2.0eV로 증가함을 알 수 있었다. 또한 reflective index(n)의 경우는 4.32에서 3.52로 감소함을 나타내었다. 기존의 p-type a-Si:H에 비해 상당한 $E_{opt}$을 가지므로 빛 흡수에 의한 손실을 줄임으로서 $V_oc$를 향상 시킬 수 있으며 동시에 짧은 파장에서의 입사광이 직접 i층을 비추므로 $I_{sc}$와 FF를 향상 시킬 수 있으리라 예상된다. 다소 낮은 전도도만 개선한다면 고효율의 박막 태양전지를 제작 할 수 있을 것으로 기대된다.

• Journal of the Microelectronics and Packaging Society
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• v.26 no.3
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• pp.81-88
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• 2019

In this study, the effects of graphene oxide (GO) addition on electromigration (EM) lifetime of Sn-3.0Ag-0.5Cu Pb-free solder joint between a ball grid array (BGA) package and printed circuit board (PCB) were investigated. After as-bonded, $(Cu,Ni)_6Sn_5$ intermetallic compound (IMC) was formed at the interface of package side finished with electroplated Ni/Au, while $Cu_6Sn_5$ IMC was formed at the interface of OSP-treated PCB side. Mean time to failure of solder joint without GO solder joint under $130^{\circ}C$ with a current density of $1.0{\times}10^3A/cm^2$ was 189.9 hrs and that with GO was 367.1 hrs. EM open failure was occurred at the interface of PCB side with smaller pad diameter than that of package side due to Cu consumption by electrons flow. Meanwhile, we observed that the added GO was distributed at the interface between $Cu_6Sn_5$ IMC and solder. Therefore, we assumed that EM reliability of solder joint with GO was superior to that of without GO by suppressing the Cu diffusion at current crowding regions.

• Journal of Biomedical Engineering Research
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• v.40 no.5
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• pp.197-205
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• 2019

The existing Extracorporeal membrane oxygenation(ECMO) and Cardiopulmonary bypass system(CPB) have been developed and applied to various devices according to their respective indications. However, due to the complicated configuration and difficult usage method, it causes inconvenience to users and there is a risk of an accident. Therefore, smart all-in-one cardiopulmonary circulation device is being developed recently. The smart all-in-one cardiopulmonary assist device consists of a blood pump for cardiopulmonary bypass, a blood oxidizer for cardiopulmonary bypass, a blood circuit for cardiopulmonary bypass, and an artificial cardiopulmonary device. It is an integrated cardiopulmonary bypass device that can be used for a variety of purposes such as emergency, intraoperative, post-operative intensive care, and long-term cardiopulmonary assist, combined with CPB used in open heart surgery and ECMO used when patient's cardiopulmonary function does not work normally. The smart all-in-one cardiopulmonary assist device does not exist as a standard and international standard applicable to advanced medical devices. Therefore, in this study, we will refer to the International Standard for Blood Components, the International Standard for Blood, the Guideline for Blood Products, and prepare applicable performance and safety guidelines to help quality control of medical devices, and contribute to the improvement of the health of people. The guideline, which is the result of conducted a survey of the method of safety and performance test, is based on the principle of all-in-one cardiopulmonary aiding device, related domestic foreign standards, the status of domestic and foreign patents, related literature, blood pump(ISO 18242), blood oxygenator (ISO 7199), and blood circuit (ISO 15676) for cardiopulmonary bypass.The items on blood safety are as follows: American Society for Testing and Materials ASTM F1841-97R17), and in the 2010 Food and Drug Administration's Safety Assessment Guidelines for Medical Assisted Circulatory Devices. In addition, after reviewing the guidelines drawn up through expert consultation bodies including manufacturers / importers, testing inspectors, academia, etc. the final guideline was established through revision and supplementation process. Therefore, we propose guidelines for evaluating the safety and performance of smart all-in-one cardiopulmonary assist devices in line with growing technology.

• Journal of the Korean Society for Aeronautical & Space Sciences
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• v.49 no.12
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• pp.1019-1025
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• 2021

In nearly all space environments, the solar cell degradation is dominated by protons[1]. Even through a GEO orbit lines in the electron radiation belts, the protons emitted from any solar event will still dominate the degradation[1]. Since COMS launch on June 26 2010, the proton events with the fluence of more than approximately 30 times the average level of perennial observations were observed between January 23 - 29 2012 and March 07 - 14 2012[16]. This paper studies the solar cell degradation by solar proton events in January and March 2012 for the open circuit voltage(Voc) of a witness cell and the short circuit current(Isc) of a section connected to a shunt switch. To evaluate the performance of solar cell, the flight data of voltage and current are corrected to the temperature, the Earth-Sun distance and the Sun angle and then compare with the solar cell characteristics at BOL. The Voc voltage dropped about 23.6mV compare after the March 2012 proton events to before the January 2012 proton events. The Voc voltage dropped less than 1% at BOL, which is 2575mV. The Isc current decreased negligible, as expected, in the March 2012 proton events.