• The Journal of the Institute of Internet, Broadcasting and Communication
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• v.9 no.3
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• pp.173-178
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• 2009

We have investigated the electrical properties of oxide metal thin film device. The device has been fabricated top-top electrode structure and its transport properties are measured in order to study the resistance change. Electrical properties with linear voltage sweep on a electrodes are used to show the variation of resistance of oxide metal thin film device. Fabricated oxide metal thin film device with MIM structure is changed from a low conductive Off-state to a high conductive On-state by the external linear voltage sweep. The $Si/SiO_2/MgO$ device is switched from a high resistance state to a low resistance state by forming. Consequently, we believe oxide metal is a promising material for a next-generation nonvolatile memory and other electrical applications.

• Journal of Electrical Engineering and Technology
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• v.9 no.2
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• pp.686-694
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• 2014

A power semiconductor device, usually used as a switch or rectifier, is very significant in the modern power industry. The power semiconductor, in terms of its physical properties, requires a high breakdown voltage to turn off, a low on-state resistance to reduce static loss, and a fast switching speed to reduce dynamic loss. Among those parameters, the breakdown voltage and on-state resistance rely on the doping concentration of the drift region in the power semiconductor, this effect can be more important for a higher voltage device. Although the low doping concentration in the drift region increases the breakdown voltage, the on-state resistance that is increased along with it makes the static loss characteristic deteriorate. On the other hand, although the high doping concentration in the drift region reduces on-state resistance, the breakdown voltage is decreased, which limits the scope of its applications. This addresses the fact that breakdown voltage and on-state resistance are in a trade-off relationship with a parameter of the doping concentration in the drift region. Such a trade-off relationship is a hindrance to the development of power semiconductor devices that have idealistic characteristics. In this study, a novel structure is proposed for the Insulated Gate Bipolar Transistor (IGBT) device that uses conductivity modulation, which makes it possible to increase the breakdown voltage without changing the on-state resistance through use of a P-floating layer. More specifically in the proposed IGBT structure, a P-floating layer was inserted into the drift region, which results in an alleviation of the trade-off relationship between the on-state resistance and the breakdown voltage. The increase of breakdown voltage in the proposed IGBT structure has been analyzed both theoretically and through simulations, and it is verified through measurement of actual samples.

• The Transactions of the Korean Institute of Power Electronics
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• v.27 no.3
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• pp.206-213
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• 2022

This paper presents setting up a laboratory-scale testbed to estimate the aging of power MOSFET devices and integrated power modules by measuring its on-state voltage and current. Based on the aging mechanisms of the component inside the power module (e.g., bond-wire, solder layer, and semiconductor chip), a system to measure the on-state resistance of device-under-test (DUT) is designed and experimented: a full-bridge circuit applies current stress to DUT, and a temperature chamber controls the ambient temperature of DUT during the aging test. The on-state resistance of SiC MOSFET measured by the proposed testbed was increased by 2.5%-3% after 44-hour of the aging test.

• The Journal of the Institute of Internet, Broadcasting and Communication
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• v.11 no.6
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• pp.9-14
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• 2011

We have investigated the electrical properties of $AlO_x$ thin film device. The device has been fabricated top-bottom electrode structure and its transport properties are measured in order to study the resistance change. Electrical properties with linear voltage sweep on a electrodes are used to show the variation of resistance of $AlO_x$ thin film device. Fabricated $AlO_x$ thin film device with MIM structure is changed from a high conductive On-state to a low conductive Off-state by the external linear voltage sweep. It is found that the initial resistance of the $AlO_x$ thin film is low-resistance On state and reversible switching occurs. Consequently, we believe $AlO_x$ thin film is a promising material for a next-generation nonvolatile memory and other electrical applications.

• Journal of IKEEE
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• v.22 no.3
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• pp.565-569
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• 2018

For the conventional power MOSFET (metal-oxide semiconductor field-effect transistor) device structure, there exists a tradeoff relationship between specific on-state resistance (Ron,sp) and breakdown voltage (BV). In order to overcome this tradeoff, a super-junction (SJ) trench MOSFET (TMOSFET) structure with uniform or non-uniform doping concentration, which decreases linearly in the vertical direction from the N drift region at the bottom to the channel at the top, for an optimal design is suggested in this paper. The on-state resistance of $0.96m{\Omega}-cm2$ at the SJ TMOSFET is much less than that at the conventional power MOSFET under the same breakdown voltage of 100V. A design methodology for the edge termination is proposed to achieve the same breakdown voltage and on-state resistance as the main body of the super-junction TMOSFET by using of the SILVACO TCAD 2D device simulator, Atlas.

• Proceedings of the KIEE Conference
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• 1995.07b
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• pp.640-642
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• 1995

This paper describes the present state and development prospect on the protective relaying under high resistance earth faults in transmission systems. Especially it is difficult to detect the fault accompanied with high resistance contary to low resistance. In the complicated power system if the detection is failed, power failure will be occured in large area. New technology with respect to such a problem must be developed. This paper introduces research and development trend in home and abroad.

• ETRI Journal
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• v.34 no.1
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• pp.134-137
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• 2012

Power metal-oxide semiconductor field-effect transistor (MOSFET) devices are widely used in power electronics applications, such as brushless direct current motors and power modules. For a conventional power MOSFET device such as trench double-diffused MOSFET (TDMOS), there is a tradeoff relationship between specific on-state resistance and breakdown voltage. To overcome the tradeoff relationship, a super-junction (SJ) trench MOSFET (TMOSFET) structure is studied and designed in this letter. The processing conditions are proposed, and studies on the unit cell are performed for optimal design. The structure modeling and the characteristic analyses for doping density, potential distribution, electric field, width, and depth of trench in an SJ TMOSFET are performed and simulated by using of the SILVACO TCAD 2D device simulator, Atlas. As a result, the specific on-state resistance of 1.2 $m{\Omega}-cm^2$ at the class of 100 V and 100 A is successfully optimized in the SJ TMOSFET, which has the better performance than TDMOS in design parameters.

• Journal of international Conference on Electrical Machines and Systems
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• v.2 no.3
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• pp.288-294
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• 2013

This paper introduces a novel method of on-line identifying the stator resistance and leakage inductance of dual three phase induction motor (DTPIM). According to the machine mathematical model, the stator resistance and leakage inductance can be estimated using the voltage and current values in harmonic subspace. Thus a method of voltage vector injection in harmonic subspace (VVIHS) is proposed, which causes currents in harmonic space. Then the errors between command and actual harmonic currents are utilized to regulate the machine parameters, including stator resistance and leakage inductance. The principle is presented and analyzed in detail. Experimental results prove the feasibility and validity of proposed method.

• Transactions of the Korean Society of Mechanical Engineers A
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• v.30 no.7 s.250
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• pp.833-840
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• 2006

The paper presents a numerical solution to the problem of a hot rigid indenter sliding over a thermoelastic Winkler foundation with a thermal contact resistance at constant speed. It is shown analytically that no steady-state solution can exist for sufficiently high temperature or sufficiently small normal load or speed, regardless of the thermal contact resistance. However the steady state solution may exist in the same situation if the thermal contact resistance is considered. This means that the effect of the large values of temperature difference and small value of force or velocity which occur at no steady state can be lessened due to the thermal contact resistance. When there is no steady state, the predicted transient behavior involves regions of transient stationary contact interspersed with regions of separation regardless of the thermal contact resistance. Initially, the system typically exhibits a small number of relatively large contact and separation regions, but after the initial transient, the trailing edge of the contact area is only established and the leading edge loses contact, reducing the total extent of contact considerably. As time progresses, larger and larger numbers of small contact areas are established, unlit eventually the accuracy of the algorithm is limited by the discretization used.

• Proceedings of the Korean Society for Noise and Vibration Engineering Conference
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• 2005.05a
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• pp.330-333
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• 2005

The paper presents a numerical solution to the problem of a hot rigid indenter siding over a thermoelastic Winkler foundation with a thermal contact resistance at constant speed. It is shown analytically that no steady-state solution can exist for sufficiently high temperature or sufficiently small normal load or speed regardless of the thermal contact resistance. However, the steady state solution may exist in the same situation if the thermal contact resistance is considered. This means that the effect of the large values of temperature difference and small value of force or velocity which occur at no steady state can be lessened due to the thermal contact resistance. When there is no steady-state the predicted transient behavior involves regions of transient stationary contact interspersed with regions of separation regardless of the thermal contact resistance. Initially, the system typically exhibits a small number of relatively large contact and separation regions, but after the initial transient the trailing edge of the contact area is only established and the leading edge loses contact, reducing the total extent of contact considerably. As time progresses, larger and larger number of small contact areas are established, until eventually the accuracy of the algorithm is limited by the discretization used.