• Journal of the Microelectronics and Packaging Society
• /
• v.24 no.4
• /
• pp.91-95
• /
• 2017

Package-On-Package (PoP) technology is developing toward smaller form factors with high-speed data transfer capabilities to cope with high DDR4x memory capacity. The common application processor (AP) used for PoP devices in smartphones has the bottom package as logic and the top package as memory, which requires both thermally and electrically enhanced functions. Therefore, it is imperative that PoP designs consider both thermal and power distribution network (PDN) issues. Stacked packages have poorer thermal dissipation than single packages. Since the bottom package usually has higher power consumption than the top package, the bottom package impacts the thermal budget of the top package (memory). This paper investigates the thermal and electrical characteristics of PoP designs, particularly the bottom package. Findings include that via and dense via-cluster volume have an important role to lower thermal resistance to the motherboard, which can be an effective way to manage chip hot spots and reduce the thermal impact on the memory package. A Cu block and dense via-cluster layout with an optimal location are proposed to drain the heat from the chip hot spots to motherboard which will enhance thermal and electrical performance at the design stage. The analytical thermal results can be used for design guidelines in 3D packaging.

• Proceedings of the International Microelectronics And Packaging Society Conference
• /
• 2005.09a
• /
• pp.111-129
• /
• 2005

Pop provides OEMs and EMS with a platform to cost effectively expand options for logic + memory 3D integration - Expands device options by simplifying business logistics of stacking - Integration controlled at the system level to best match stacked combinations with system requirements - Eliminates margin stacking and expands technology reuse - Helps manage the huge cost impacts associated with increasing demand for multi media processing and memory. PoP is well timed to enable and leverage: - Mass customization of systems for different use (form, fit and function) requirements o Bband and apps processor + memory stack platforms - Logic transition to flip chip enables PoP size reduction o Area and height reduction. Industry standardization is progressing. Amkor provides full turn-key support for base package, memory package and full system integration.

• JSTS:Journal of Semiconductor Technology and Science
• /
• v.1 no.4
• /
• pp.216-231
• /
• 2001

Several methods for improving device yields and characteristics have been studied by IC manufacturers, as the options for programming components become diversified through the introduction of novel processes. Especially, the sequential repair steps on wafer level and package level are essentially required in DRAMs to improve the yield. Several repair methods for DRAMs are reviewed in this paper. They include the optical methods (laser-fuse, laser-antifuse) and the electrical methods (electrical-fuse, ONO-antifuse). Theses methods can also be categorized into the wafer-level(on wafer) and the package-level(post-package) repair methods. Although the wafer-level laser-fuse repair method is the most widely used up to now, the package-level antifuse repair method is becoming an essential auxiliary technique for its advantage in terms of cost and design efficiency. The advantages of the package-level antifuse method are discussed in this paper with the measured data of manufactured devices. With devices based on several processes, it was verified that the antifuse repair method can improve the net yield by more than 2%~3%. Finally, as an illustration of the usefulness of the package-level antifuse repair method, the repair method was applied to the replica delay circuit of DLL to get the decrease of clock skew from 55ps to 9ps.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
• /
• 2002.07a
• /
• pp.32-35
• /
• 2002

The work focuses on the development of a Cu lead-frame with a single-sided adhesive tape for cost reduction and reliability improvement of LOC (lead on chip) package products, which are widely used for the plastic-encapsulation of memory chips. Most of memory chips are assembled by the LOC packaging process where the top surface of the chip is directly attached to the area of the lead-frame with a double-sided adhesive tape. However, since the lower adhesive layer of the double-sided adhesive tape reveals the disparity in the coefficient of thermal expansion from the silicon chip by more than 20 times, it often causes thermal displacement-induced damage of the IC pattern on the active chip surface during the reliability test. So, in order to solve these problems, in the resent work, the double-sided adhesive tape is replaced by a single-sided adhesive tape. The single-sided adhesive tape does net include the lower adhesive layer but instead, uses adhesive materials, which are filled in clear holes of the base film, just for the attachment of the lead-frame to the top surface of the memory chip. Since thermal expansion of the adhesive materials can be accommodated by the base film, memory product packaged using the lead-flame with the single-sided adhesive tape is shown to have much improved reliability. Author allied this invention to the Korea Patent Office for a patent (4-2000-00097-9).

• Journal of the Microelectronics and Packaging Society
• /
• v.19 no.4
• /
• pp.45-50
• /
• 2012

A family of multi-die DRAM packages was developed that incorporate the full functionality of an SODIMM into a single package. Using a common ball assignment analogous to the edge connector of an SODIMM, a broad range of memory types and assembly structures are supported in this new package. In particular DDR3U, LPDDR3 and DDR4RS are all supported. The center-bonded DRAM use face-down wirebond assembly, while the peripherybonded LPDDR3 use the face-up configuration. Flip chip assembly as well as TSV stacked memory is also supported in this new technology. For the center-bonded devices (DDR3, DDR4 and LPDDR3 ${\times}16$ die) and for the face up wirebonded ${\times}32$ LPDDR3 devices, a simple manufacturing flow is used: all die are placed on the strip in a single machine insertion and are sourced from a single wafer. Wirebonding is also a single insertion operation: all die on a strip are wirebonded at the same time. Because the locations of the power signals is unchanged for these different types of memories, a single consolidated set of test hardware can be used for testing and burn-in for all three memory types.

• Journal of KIISE
• /
• v.44 no.2
• /
• pp.124-131
• /
• 2017

The emerging next-generation manycore processors for high-performance computing are equipped with a high-bandwidth on-package memory along with the traditional host memory. The Multi-Channel DRAM (MCDRAM), for example, is the on-package memory of the Intel Xeon Phi Knights Landing (KNL) processor, and theoretically provides a four-times-higher bandwidth than the conventional DDR4 memory. In this paper, we suggest a mechanism to exploit MCDRAM for improving the performance of MPI intra-node communication. The experiment results show that the MPI intra-node communication performance can be improved by up to 272 % compared with the case where the DDR4 is utilized. Moreover, we analyze not only the performance impact of different MCDRAM-utilization mechanisms, but also that of core affinity for processes.

• Transactions on Electrical and Electronic Materials
• /
• v.5 no.4
• /
• pp.138-142
• /
• 2004

This paper presents the improved bum-in method for the reliability of SRAM in Multi Chip Package (MCP). Semiconductor reliability is commonly improved through the bum-in process. Reliability problem is more significant in MCP that includes over two chips in a package, because the failure of one chip (SRAM) has a large influence on the yield and quality of the other chips - Flash Memory, DRAM, etc. Therefore, the quality of SRAM must be guaranteed. To improve the quality of SRAM, we applied the improved wafer level bum-in process using multi cells selection method in addition to the previously used methods. That method is effective in detecting special failure. Finally, with the composition of some kind of methods, we could achieve the high quality of SRAM in Multi Chip Package.

• Journal of the Semiconductor & Display Technology
• /
• v.21 no.4
• /
• pp.45-49
• /
• 2022

Through Silicon Via (TSV) is a technology that interconnects chips through silicon vias. TSV technology can achieve shorter distance compared to wire bonding technology with excellent electrical characteristics. Due to this characteristic, it is currently being used in many fields that needs faster communication speed such as memory field. However, there is performance degradation issue on TSV technology due to the parasitic capacitance. To deal with this problem, in this study, the parasitic capacitance with TSV design factors is analyzed using commercial tool. TSV design factors were set in three categories: size, aspect ratio, pitch. Each factor was set by dividing the range with TSV used for memory and package. Ansys electronics desktop 2021 R2.2 Q3D was used for the simulation to acquire parasitic capacitance data. DOE analysis was performed based on the reaction surface method. As a result of the simulation, the most affected factors by the parasitic capacitance appeared in the order of size, pitch and aspect ratio. In the case of memory, each element interacted, and in the case of package, it was confirmed that size * pitch and size * aspect ratio interact, but pitch * aspect ratio does not interact.

• Journal of the Korea Institute of Information and Communication Engineering
• /
• v.16 no.8
• /
• pp.1734-1740
• /
• 2012

In this paper, we propose a FSOURCE circuit which requires such a small switching current that an eFuse OTP memory can be programmed in the post-package state of the PMIC chips using a single power supply. The proposed FSOURCE circuit removes its short-circuit current by using a non-overlapped clock and reduces its maximum current by reducing the turned-on slope of its driving transistor. Also, we propose a DOUT buffer circuit initializing the output data of the eFuse OTP memory with arbitrary data during the power-on reset mode. We design a 24-bit differential paired eFuse OTP memory which uses Magnachip's $0.35{\mu}m$ BCD process, and the layout size is $381.575{\mu}m{\times}354.375{\mu}m$($=0.135mm^2$).

• Journal of the Microelectronics and Packaging Society
• /
• v.21 no.2
• /
• pp.43-51
• /
• 2014

In 3-dimensional (3D) integrated package, thermal management is one of the critical issues due to the high heat flux generated by stacked multi-functional chips in miniature packages. In this study, we used numerical simulation method to analyze the thermal behaviors, and investigated the thermal issues of 3D package using TSV (through-silicon-via) technology for mobile application. The 3D integrated package consists of up to 8 TSV memory chips and one logic chip with a interposer which has regularly embedded TSVs. Thermal performances and characteristics of glass and silicon interposers were compared. Thermal characteristics of logic and memory chips are also investigated. The effects of numbers of the stacked chip, size of the interposer and TSV via on the thermal behavior of 3D package were investigated. Numerical analysis of the junction temperature, thermal resistance, and heat flux for 3D TSV package was performed under normal operating and high performance operation conditions, respectively. Based on the simulation results, we proposed an effective integration scheme of the memory and logic chips to minimize the temperature rise of the package. The results will be useful of design optimization and provide a thermal design guideline for reliable and high performance 3D TSV package.