• Journal of the Korean Institute of Telematics and Electronics D
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• v.36D no.3
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• pp.41-47
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• 1999

Ion implanted GaAs MESFET with low resistive layer was fabricated using Si diffusion into GaAs from SiN. During the thermal annealing at 95$0^{\circ}C$ for 30s, Si diffused into ion implanted region of GaAs from SiN and they formed low resistive layer of 350$\AA$ thickness. The diffusion of Si decreased the sheet resistance of source and drain region from 1000$\Omega$/sq. to 400$\Omega$/sq. and the AuGe/Ni/Au ohmic contact resitivity from 2.5$\times$10sub -6$\Omega$-cmsup 2 to $1.5\times$10sup -6$\Omega$-cmsup 2. The fabricated lum gate length MESFET with Si diffused surface layer shows the transconductance of 360ms/mm, 8.5dB of associated gain and 3.57dB of minimum noise figure at 12GHz. These performances are better than that of MESFET without Si diffused layer.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2002.07a
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• pp.350-353
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• 2002

High voltage SiC Schottky barrier diodes with field plate structure have been fabricated and characterized. N-type 4H-SiC wafer with an epilayer of ∼10$\^$15/㎤ doping level was used as a starting material. Various Schottky metals such as Ni, Pt, Ta, Ti were sputtered and thermally-evaporated on the low-doped epilayer. Ohmic contact was formed at the backside of the SiC wafer by annealing at 950$^{\circ}C$ for 90 sec in argon using rapid thermal annealer. Field oxide of 550${\AA}$ in thickness was formed by a wet oxidation process at l150$^{\circ}C$ for 3h and subsequently heat-treated at l150$^{\circ}C$ for 30 min in argon for improving oxide quality. The turn-on voltages of the Ni/4H-SiC Schottky diode was 1.6V which was much higher than those of Pt(1.0V), Ta(0.7V) and Ti(0.7). The voltage drop was measured at the current density of 100A/$\textrm{cm}^2$ showing 2.1V for Ni Schottky diode, 1.45V for Pt 1.35V, for Ta, and 1.25V for Ti, respectively. The maximum reverse breakdown voltage was measured 1100V in the file plated Schottky diodes with 101an thick epilayer.

• Applied Science and Convergence Technology
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• v.26 no.5
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• pp.110-113
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• 2017

The two-dimensional layered $MoS_2$ has high mobility and excellent optical properties, and there has been much research on the methods for using this for next generation electronics. $MoS_2$ is similar to graphene in that there is comparatively weak bonding through Van der Waals covalent bonding in the substrate-$MoS_2$ and $MoS_2-MoS_2$ heteromaterial as well in the layer-by-layer structure. So, on the monatomic level, $MoS_2$ can easily be exfoliated physically or chemically. During the $MoS_2$ field-effect transistor fabrication process of photolithography, when using water, the water infiltrates into the substrate-$MoS_2$ gap, and leads to the problem of a rapid decline in the material's yield. To solve this problem, an epoxy-based, as opposed to a water-based photoresist, was used in the photolithography process. In this research, a hydrophobic $MoS_2$ field effect transistor (FET) was fabricated on a hydrophilic $SiO_2$ substrate via chemical vapor deposition CVD. To solve the problem of $MoS_2$ exfoliation that occurs in water-based photolithography, a PPMA sacrificial layer and SU-8 2002 were used, and a $MoS_2$ film FET was successfully created. To minimize Ohmic contact resistance, rapid thermal annealing was used, and then electronic properties were measured.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2003.07a
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• pp.396-399
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• 2003

4H-SiC un diodes with field limiting rings(FLRs) were fabricated and characterized. The dependences of reverse breakdown voltage on the number of FLRs, the distance between p-base main junction and first FLR, and activation temperatures, were investigated. Al and B ions were implanted and activated at high temperature to form p-base region and p+ region in the n-epilayer. We have obtained up to 1782V of reverse breakdown voltage in the un diode with two FLRs on loom thick epilayer. The differential on-resistances of the fabricated diode are $5.3m{\Omega}cm^2$ at $100A/cm^2$ and $2.7m{\Omega}cm^2$ at $1kA/cm^2$, respectively. All pn diodes with FLRs have higher avalanche breakdown voltages than that of diode without an FLR. Regardless of the activation temperature, the un diode with a FLR located 5um apart from main junction has the highest mean breakdown voltage around 1600V among the diodes with one ring. On the other hand, the pn diode with two rings showed different behavior with activation temperature. It reveals that high voltage SiC pn diodes with low on-resistance can be fabricated by using the FLR edge termination.

• Proceedings of the Korean Vacuum Society Conference
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• 2011.08a
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• pp.260-260
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• 2011

투명 비정질 산화물반도체는 디스플레이의 구동소자인 박막 트랜지스터에 채널층으로 사용된다. 또한 투명하면서 유연성이 있는 소자를 저비용으로 제작할 수 있는 장점을 가진다. 투명 산화물반도체 재료 중 IGZO는 Si 또는 GaAs와 같은 공유결합성 반도체와는 다른 전자 배치로 전도대가 금속이온의 ns 궤도에서 형성되며, 가전도대가 산소 음이온의 2p 궤도에서 형성된다. 특히 큰 반경의 금속 양이온은 인접한 양이온과 궤도 겹침이 크게 발생하게 되며 캐리어의 효과적인 이동 경로를 제공해줌으로써 다른 비정질 반도체와는 다르게 높은 전하이동도(~10 $cm^2$/Vs)를 가진다. 따라서 저온공정에서 우수한 성능의 TFT소자를 제작할 수 있는 장점이 있다. 본 연구에서는 TFT 채널층으로 사용하기 위한 a-IGZO박막의 산소분압에 따른 특성변화를 분석 하였다. a-IGZO박막은 Pulsed Laser Deposition (PLD)를 이용하여 산소분압(20~200 mTorr) 변화에 따라 Glass기판에 증착하였다. 증착된 a-IGZO 박막의 구조적 특성으로는 X-ray diffraction (XRD), Field emission scanning electron microscopy (FE-SEM), 광학적 특성은 UV-vis spectroscopy 분석을 통해서 알아보았다. TFT 채널층의 조건으로는 낮은 off-current, 높은 on-off ratio를 위해 고저항 ($10^3\;{\Omega}cm$)의 진성반도체 성질과 source/drain금속과의 낮은 접촉저항(ohmic contact) 등의 전기적 성질이 필요하다. 따라서 이러한 전기적 특성확인을 위해 transmission line method (TLM)을 사용하여 접촉저항과 비저항을 측정하였고, 채널층으로 적합한 분압조건을 확인해볼 수 있었다.

• Proceedings of the Korean Vacuum Society Conference
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• 2011.02a
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• pp.466-466
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• 2011

There have been several methods to fabricate carbon nanotube (CNT) emitters, which include as-grown, spraying, screen-printing, electrophoresis and bonding methods. Unfortunately, these techniques generally suffer from two main problems. One is a weak mechanical adhesion between CNTs and the cathode. The as-grown, spraying and electrophoresis methods show a weak mechanical adhesion between CNTs and the cathodes, which induces CNT emitters pulled out under a high electric field. The other is a severe degradation of the CNT tip due to organic binders used in the fabrication process. The screen-printing method which is widely used to fabricate CNT emitters generally shows a critical degradation of CNT emitters caused by the organic binder. Such kinds of problems induce a short lifetime of the CNT field emitters which may limit their practical applications. Therefore, a robust CNT emitter which has the strong mechanical adhesion and no degradation is still a great challenge. Here, we introduce a simple and effective technique for fabrication of CNT field emitter, namely filtration-taping-transfer method. The CNT emitters fabricated by the filtration-taping-transfer method show the low turn-on electric fields, the high emission current, good uniformity and good stability. The enhanced emission performance of the CNT emitters is mainly attributed to high emission sites on the emitter area, and to good ohmic contact and strong mechanical adhesion between the emitters and cathodes. The CNT emitters using a simple and effective fabrication method can be applied for various field emission applications such as field emission displays, lamps, e-beam sources, and x-ray sources. The detail fabrication process will be covered at the poster.

• Proceedings of the Korean Vacuum Society Conference
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• 2012.02a
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• pp.389-389
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• 2012

Molybdenum is one of the most important materials used as a back ohmic contact for $Cu(In,Ga)(Se,S)_2$ (CIGS) solar cells because it has good electrical properties as an inert and mechanically durable substrate during the absorber film growth. Sputter deposition is the common deposition process for Mo thin films. Molybdenum thin films were deposited on soda lime glass (SLG) substrates using direct-current planar magnetron sputtering technique. The outdiffusion of Na from the SLG through the Mo film to the CIGS based solar cell, also plays an important role in enhancing the device electrical properties and its performance. The structure, surface morphology and electrical characteristics of Mo thin films are generally dependent on deposition parameters such as DC power, pressure, distance between target and substrate, and deposition temperature. The aim of the present study is to show the resistivity of Mo layers, their crystallinity and morphologies, which are influenced by the substrate temperature. The thickness of Mo films is measured by Tencor-P1 profiler. The crystal structures are analyzed using X-ray diffraction (XRD: X'Pert MPD PRO / Philips). The resistivity of Mo thin films was measured by Hall effect measurement system (HMS-3000/0.55T). The surface morphology and grain shape of the films were examined by field emission scanning electron microscopy (FESEM: Hitachi S-4300). The chemical composition of the films was obtained by the energy dispersive X-ray spectroscopy (EDX). Finally the optimum substrate temperature as well as deposition conditions for Mo thin films will be developed.

• Proceedings of the Korean Vacuum Society Conference
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• 2011.02a
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• pp.323-324
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• 2011

현재 많은 blue LED소자의 제작 공정과 소자 표면에 texturing하는 과정이 보고되어 있다. 그 중n층이 위로 올라오는 수직형 LED 구조로 인해 표면 texturing 기술은 빛의 발광 효율을 증가 시킬 수 있는 중요한 기술 중 하나가 되었다. 1 이 연구에서, 우리는 InGaN을 바탕으로 한 LED 소자의 표면 roughening을 건식과 습식 공정을 모두 거치는 과정을 통하여 소자의 발광 효율을 높이는 시도를 하였다. 최근 전도성 물질 기판 위에 증착 되어 있는 수직형 LED 소자 2,3,4는 과거의 사파이어 기판 위에 증착 되어 있는 형태의 LED 소자에 비해 우수한 소자 특성을 보인다. 이는 과거 사파이어 기판을 사용함으로써 낮은 열적 특성과 더불어 전기 정도성에 몇 가지 제약을 초래하게 되었기 때문이다. 반면, 전도성 기판은 LED 구조의 back side ohmic contact을 가능하게 하였고, 더 나은 확산 특성을 보여 주었고 작동 전압 또한 감소 하였다. N층이 위에 있는 수직형 LED 소자는 KrF pulsed excimer laser로 인해 실현 되었다. 이 laser 빛이 투명한 사파이어 기판을 통해 얇은 GaN층에 입사되면, 기판과 GaN가 분리된다. 이 레이저 기술은 laser lift-off(LLO)로 성장된 기판으로부터 LED 구조를 분리하는데 성공하게 하였다. 우리는 건식 식각 공정을 이용하여 n 층이 위에 올라와 있는 구조인 수직형 LED 소자에 roughening을 주고 다시 이 표면에 습식 식각 공정을 적용하여 거친 부분의 거칠기를 또 한번 증가시켰다. 그리고 이 거칠어진 표면은 이 공정이 진행 되기 전의 소자에 비해 빛의 발광 효율이 증가 되었다. 이 두 공정을 포함한 식각 공정은 두 가지 장점이 생겼는데, 한가지는 GaN에서 외부로 방출할 수 있는 표면 지역이 증가되었고, 다른 한가지는 가파른 거칠기 특성으로 인해 critical angle을 증가시킨 것이다.

• Proceedings of the Korean Vacuum Society Conference
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• 2011.02a
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• pp.164-164
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• 2011

본 연구에서는 InAs 양자점 태양전지의 활성영역에 크기가 다른 양자점을 삽입하여 그 광학적 특성변화를 photoreflectance (PR)와 photoluminescence (PL)를 이용하여 연구하였다. 본 연구에 사용된 InAs 양자점 태양전지 구조는 n+-GaAs (100) 기판 위에 n+-GaAs buffer를 300 nm 성장 후 활성영역에 InAs 양자점과 40 nm 의 n-GaAs spacer를 이용하여 8층의 양자점을 삽입하였다. 그 위에 n-GaAs $1.14{\mu}m$와 p+-GaAs $0.6{\mu}m$, p+-AlGaAs window를 50 nm 성장하고 ohmic contact을 위하여 p+-GaAs 10 nm 성장하였다. 활성영역에 사용된 InAs 양자점의 크기는 InAs 조사량을 1.7 ML~3.0 ML까지 변화시키며 조절하였다. 양자점 태양전지의 활성영역에 삽입한 양자점의 크기에 따른 photoreflectance 측정에서 InAs 조사량이 0~2 ML 사이에서는 Franz-Keldysh oscillation (FKO)의 주기가 짧아지고 2.5 ML 이상에서는 일정한 값 가짐을 보였다. 이는 양자점의 크기가 커질수록 내부 응력에 의한 전기장의 변화에 의한 것으로 사료된다. 아울러 InAs 양자점 태양전지의 photoluminescence 측정 결과 상온에서 1.35 eV 근처에 발광이 관측되었으며 InAs 조사량이 증가할수록 발광중심 낮은 에너지쪽으로 이동함을 보였으며 태양전지 효율은 2.0 ML 인 경우 최고치를 나타내었다. InAs 조사량을 2.0 ML 이상 증가 시킨 경우는 효율이 점진적으로 감소하였다.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.19 no.9
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• pp.818-824
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• 2006

The effects of high-temperature process required to fabricate the SiC devices on the surface morphology and the electrical characteristics were investigated for 4H-SiC Schottky diodes. The 4H-SiC diodes without a graphite cap layer as a protection layer showed catastrophic increase in an excess current at a forward bias and a leakage current at a reverse bias after high-temperature annealing process. Moreover it seemed to deviate from the conventional Schottky characteristics and to operate as an ohmic contact at the low bias regime. However, the 4H-SiC diodes with the graphite cap still exhibited their good electrical characteristics in spite of a slight increase in the leakage current. Therefore, we found that the graphite cap layer serves well as the protection layer of silicon carbide surface during high-temperature annealing. Based on a closer analysis on electric characteristics, a conductive surface transfiguration layer was suspected to form on the surface of diodes without the graphite cap layer during high-temperature annealing. After removing the surface transfiguration layer using ICP-RIE, Schottky diode without the graphite cap layer and having poor electrical characteristics showed a dramatic improvement in its characteristics including the ideality factor[${\eta}$] of 1.23, the schottky barrier height[${\Phi}$] of 1.39 eV, and the leakage current of $7.75\{times}10^{-8}\;A/cm^{2}$ at the reverse bias of -10 V.