• Journal of the Korean Society for Aeronautical & Space Sciences
• /
• v.31 no.6
• /
• pp.23-29
• /
• 2003

Transonic two-phase flow of Saturated humid air, in which relative humidity is 100%, with various condensation processes around thin airfoils is investigated. The study uses an extended transonic small-disturbance(TSD) model of Rusak and Lee [11, 12] which includes effects of heat addition to the flow due to condensation. Two possible limit types of condensation processes are considered. In the nonequilibrium and homogeneous process, the condensate mass fraction is calculated according to classical nucleation and droplet growth rate models. In the equilibrium process, the condensate mass fraction is calculated by assuming an isentropic process. The flow and condensation equations are solved numerical1y by iterative computations. Results under same upstream conditions describe the flow structure, field of condensate, and pressure distribution on airfoil's surfaces. It is found that flow characteristics, such as position and strength of shock waves and airfoil’s pressure distribution, are different for the two condensation processes. Yet, in each case, heat addition as a result of condensation causes significant changes in flow behavior and affects the aerodynamic performance of airfoils.

• Journal of the Korean Vacuum Society
• /
• v.12 no.3
• /
• pp.168-173
• /
• 2003

Recently, according to the rapid progress in Flat-panel-display industry, there has been a growing interest in the poly-Si process. Compared with a-Si, poly-Si offers significantly high carrier mobility, so it has many advantages to high response rate in Thin Film Transistors (TFT's). We have investigated a new process for the high temperature Solid Phase Crystallization (SPC) of a-Si films without any damages on glass substrates using thin film heater. because the thin film heater annealing method is a very rapid thermal process, it has very low thermal budget compared to the conventional furnace annealing. therefore it has some characteristics such as selective area crystallization, high temperature annealing using glass substrates. A 500 $\AA$-thick a-Si film was crystallized by the heat transferred from the resistively heated thin film heaters through $SiO_2$ intermediate layer. a 1000 $\AA$-thick $TiSi_2$ thin film confined to have 15 $\textrm{mm}^{-1}$ length and various line width from 200 to 400 $\mu\textrm{m}$ was used as the thin film heater. By this method, we successfully crystallized 500 $\AA$-thick a-Si thin films at a high temperature estimated above $850^{\circ}C$ in a few seconds without any thermal deformation of g1ass substrates. These surprising results were due to the very small thermal budget of the thin film heaters and rapid thermal behavior such as fast heating and cooling. Moreover, we investigated the time dependency of the SPC of a-Si films by observing the crystallization phenomena at every 20 seconds during annealing process. We suggests the individual managements of nucleation and grain growth steps of poly-Si in SPC of a-Si with the precise control of annealing temperature. In conclusion, we show the SPC of a-Si by the thin film heaters and many advantages of the thin film heater annealing over other processes

• Korean Chemical Engineering Research
• /
• v.45 no.4
• /
• pp.400-409
• /
• 2007

Morphology of methane/propane clathrate hydrate crystal was investigated under different undercooling conditions. After the water pressurized with compound guest gas was fully saturated by agitation, medium within the vessel was rapidly undercooled and maintained at the constant temperature while the visual observations using microscope revealed detailed features of subsequent crystal nucleation, migration, growth and interference occurring within liquid pool. The growth of hydrate was always initiated with film formations at the bounding surface between bulk gas and liquid regions under all tested experimental conditions. Then a number of small crystals ascended, some of which settled beneath the hydrate film. When undercooling was relatively small, some of the settled crystals slowly grew into faceted columns. As the undercooling increased, the downward growth of crystals underneath the hydrate film became dendritic and occurred with greater rate and with finer arm spacing. The shapes of the floating crystals within liquid pool were diverse and included octahedron and triangular or hexagonal platelet. When the undercooling was small, the octahedral crystals were found dominant. As the undercooling increased, the shape of the floating crystals also became dendritic. The detailed growth characteristics of floating crystals are reported focused on the influences caused by undercooling and memory effect.

• Resources Recycling
• /
• v.29 no.4
• /
• pp.58-66
• /
• 2020

Carbonation (step I) and cryo-crystallization (crystallization at low temperature) (step II) were performed to synthesize Na compounds from sodium concentrated solution. In the step 1, the solubility and pH of carbon dioxide (95 wt.%) affecting carbonation could be changed by the variation of reaction temperature. The step II was performed at 2 ℃ after carbonation. The injection of carbon dioxide was carried out twice for the stable production and the saturated solubility of carbonate ions in solution. Firstly, we tried to inject CO₂ for controlling the solubility of CO₂ by changing the reaction temperature from 35 ℃ to 10 ℃, and the second injection was aimed at 10 ℃ for inducing nucleation of Na compound through carbonation after NaCl solution addition. In the cryo-crystallization step, the crystal growth of Na compounds could be induced by slowing the carbonation rate through reaction temperature change from 10 ℃ to 2 ℃. In this study, the effect on NaOH concentration was examined and the purity of Na compound was increased when 2M NaOH was used. In addition, the synthesized Na compounds were mostly rod-shaped and consisted of sodium carbonate or sodium carbonate with monohydrate.

• Journal of the Korean Society of Safety
• /
• v.14 no.1
• /
• pp.208-215
• /
• 1999

The creep behavior of a rapidly solidified and consolidated Al-9.45wt%Fe-4.45wt%Cr alloy were investigated in the stress range 40 to 115 MPa and temperature range 300(0.53Tm) to 441$^{\circ}C$(0.66Tm). It is of use to available aerospace and automobile industries for the improved performance of materials used at high temperature. Because Al alloys with improved creep resistance offer the potential for lower weight and reduced costs in aerospace and automobile components (e.g., structural members and engine parts) through the replacement of heavier and more costly materials, the safety in use at high temperature is good. The alloy is characterized by high stress exponents and activation energies for creep, which are greatly dependent on the stress and temperature. Because the creep stress is seen to cause a strongly significant enhancement of coarsening, the coarsening rate of the dispersed particles in all crept specimens is faster than that in isothermally annealed specimens. Dislocations connecting dispersoids are observed more cofrequently in crept specimens with higher stress and lower temperature. The creep strain rates in the power law creep regime were found to be predicted much better by the Shorty and Rosler/Arzt equation with the inclusion of a threshold stress and dislocation detachment mechanism. The dispersoids in this alloy were acting a source of void nucleation that finally leaded to ductile fracture within the grain so called intergranular. Each void was initiated, grown and failed at the dispersoids in the aluminium matrix. Grain boundary accommodation of the slip produced, which result in initiation of the void and then final transgranular fracture. Therefore, it was confirmed that these dispersoids played an important role in the fracture mechanism by the formation of $Al_{13}Fe_4$, $Al_{13}Cr_2$ and $Al_2O_3$.

• Journal of the Korean earth science society
• /
• v.22 no.5
• /
• pp.405-414
• /
• 2001

Jecheon granite can be divided into two types; porphyritic granite (K-feldspar megacryst bearing) and medium-grained biotite granite. Porphyritic granite, host body of feldspar deposits, is 8${\sim}$11 km in diameter and about 80 $km^{2}$ in area. It mainly contains K-feldspar, plagioclase, biotite and quartz, and magnetite, zircon, sphene and apatite are accessary minerals. Enclosed minerals in K-feldspar megacryst with 3${\sim}$10 cm in diameter are hornblende, plagioclase, quartz, magnetite, apatite, sphene and zircon. Mafic enclaves mainly consisting of hornblende, plagioclase and quartz are frequently observed in porphrytic granite. Medium-grained biotite granite consists of K-feldspar, plagioclase, biotite and hornblende as main, and hematite, muscovite, apatite and zircon as accessary minerals. Core and rim An contents of plagioclase from porphyritic granite, medium biotite granite, K-feldspar megacryst, and mafic enclave are 36 and 21, 40 and 32, 37 and 32, and 43 and 36, respectively. $X_{Fe}$ values of hornblende are 0.57 at biotite granite, 0.51 at K-feldspar mehacryst and 0.45 at mafic enclave. $X_{Fe}$ values of biotite and hornblende are homogeneous without chemical zonation. K-feldspar megacryst shows end member of pure composition with exsolved thin lamellar pure albites. Characteristics of mineral compositions and petrography indicate porphyritic granite is igneous origin and medium-grained biotite granite comes from the same source of magma; biotite granite is initiated to solidly and from residual melt porphyritic granite can be formed. Possibly K-feldspar megacrysts are formde under H$_{2}$O undersaturation condition and near K-feldspar solidus curve temperature; growth rate is faster than nucleation rate. Mafic enclaves are thought to be mingled mafic magma in felsic magma, which is formed from compositional stratigraphy. Estimated equilibrium temperature and pressure for medium-grained biotite granite are about $800^{\circ}C$ and 4.83${\sim}$5.27 Kb, respectively.

• Korean Chemical Engineering Research
• /
• v.52 no.6
• /
• pp.814-820
• /
• 2014

In this work, hydrate inhibition performance of water-soluble polymers including pyrrolidone, caprolactam, acrylamide types were evaluated using torque measurement and high pressure differential scanning calorimeter (HP ${\mu}$-DSC). The obtained experimental results suggest that the studied polymers represent the kinetic hydrate inhibition (KHI) performance. 0.5 wt% polyvinylcaprolactam (PVCap) solution shows the hydrate onset time of 34.4 min and subcooling temperature of 15.9 K, which is better KHI performance than that of pure water - hydrate onset time of 12.3 min and subcooling temperature of 6.0 K. 0.5 wt% polyvinylpyrrolidone (PVP) solution shows the hydrate onset time of 27.6 min and the subcooling temperature of 13.2 K while polyacrylamide-co-acrylic acid partial sodium salt (PAM-co-AA) solution shows less KHI performance than PVP solution at both 0.5 and 5.0 wt%. However, PAM-co-AA solution shows slow growth rate and low hydrate amount than PVCap. In addition to hydrate onset and growth condition, torque change with time was investigated as one of KHI evaluation methods. 0.5 wt% PVCap solution shows the lowest average torque of 6.4 N cm and 0.5 wt% PAM-co-AA solution shows the average torque of 7.2 N cm. For 0.5 wt% PVP solution, it increases 11.5 N cm and 5.0 wt% PAM-co-AA solution shows the maximum average torque of 13.4 N cm, which is similar to the average torque of pure water, 15.2 N cm. Judging from the experimental results obtained by both an autoclave and a HP ${\mu}$-DSC, the PVCap solution shows the best performance among the KHIs in terms of delaying hydrate nucleation. From these results, it can be concluded that the torque change with time is useful to identify the flow ability of tested solution, and the further research on the inhibition of hydrate formation can be approached in various aspects using a HP ${\mu}$-DSC.

• Journal of the Korean Vacuum Society
• /
• v.10 no.1
• /
• pp.44-50
• /
• 2001

Metal oxide semiconductor (MOS) structures containing nanocrystals are fabricated by using rapid thermal oxidations of amorphous silicon films. The amorphous films are deposited either by electron beam deposition method or by electron beam deposition assisted by Ar ion beam during deposition. Post oxidation of e-beam deposited film results in relatively small hysteresis of capacitance-voltage (C-V) and the flat band voltage shift, $\DeltaV_{FB}$ is less than 1V indicative of the formation of low density nanocrystals in $SiO_2$ near $SiO_2$/Si interface. By contrast, we observe very large hysteresis in C-V characteristics for oxidized ion-beam assisted e-beam deposited sample. The flat band voltage shift is larger than 22V and the hysteresis becomes even broader as increasing injection times of holes at accumulation condition and electrons at inversion condition. The result indicates the formation of slow traps in $SiO_2$ near $SiO_2$/Si interface which might be related to large density nanocrystals. Roughly estimated trap density is $1{\times}10^{13}cm^{-2}$. Such a large hysteresis may be explained in terms of the activation of adatom migration by Ar ion during deposition. The activated migration may increase nucleation rate of Si nuclei in amorphous Si matrix. During post oxidation process, nuclei grow into nanocrystals. Therefore, ion beam assistance during deposition may be very feasible for MOS structure containing nanocrystals with large density which is a basic building block for single electron memory device.