• Korean Journal of Fisheries and Aquatic Sciences
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• v.26 no.2
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• pp.150-158
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• 1993

In order to investigate the content and seasonal variation of the extractive components including taste compounds, free amino acids, nucleotides and related compounds, quanternary ammonium bases, and guanidino compounds of ascidian collected from the south coast of Korea were determined bimonthy from April to October in 1990. The extractive nitrogen was composed of $60{\sim}62\%$ as free amino acids, $12{\sim}16\%$ as betaines, $5{\sim}9\%$ as nucleotides, and others as trimethylamine oxide(TMAO) and total creatinine. The muscle of ascidian was rich in such free amino acids as taurine, proline, glutamic acid, glycine and glycinebetaine. Most of nitrogenous compounds in the extractives showed a marked seasonal variation with a maximum in summer or autumn. AMP content was relatively high among nucleotides. Succinic acid, malic acid, lactic acid and pyroglutaric acid were the major organic acids in ascidian. The results of omission test suggested that the taste of ascidian is attributed to mainly free amino acid, betaines, nucleotides and nonvolatile organic acid in order.

• Korean Journal of Food Science and Technology
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• v.32 no.4
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• pp.860-866
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• 2000

The efforts were made to develop persimmon leaf beverages on the basis of the results of sensory evaluation. The result of sensory evaluation for the development of persimmon leaf beverages showed that when the concentration of extracts was 10%, the aroma and flavor of persimmon leaves was best. The optimum concentration of sugar was 4.5% and apple juice was 15%. The change of pH had the tendency to keep stable range(3.82-3.71) during the period of 30 days and free-sugar had little change according to the temperature and time of preservation. The preservation of the change of ascorbic acid revealed that the range of decrease in the case of preservation at $4^{\circ}C$ was a bit narrower than in the case of preservation at $25^{\circ}C$. Nonvolatile organic acids were four kinds of acids, oxalic acid, levulinic acid, malic acid, and citric acid, among which levulinic acid was on the increase for the first 10 days during the preservation period and then on the decrease regardless of the temperature of preservation. The browning of beverages was on the slight increase.

• Journal of the Korean Society of Food Science and Nutrition
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• v.36 no.3
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• pp.332-341
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• 2007

The purpose of this study was to investigate the change of flavor compounds of freeze-dried garlic and garlic roasted with soybean oil and sesame oil. Freeze-dried garlic and ground raw garlic roasted with oils was prepared at $180^{\circ}C$ for 5 minutes. Volatile compounds of garlic samples were obtained by Likens-Nickerson distillation/solvent extraction and identified by GC and GC/MS. Sulfur compounds, methyl allyl sulfide, diallyl sulfide, methyl allyl disulfide, dimethyl trisulfide, diallyl disulfide, methyl allyl trisulfide and diallyl trisulfide were the major volatile in garlic flavor which was more than 98% of the total volatile compounds. The total amount of sulfur compounds in freeze-dried garlic roasted with soybean oil was decreased to 20% compare to that of garlic flavor; however, 10 pyrazines such as 2-methyl pyrazine, 2,6-dimethyl pyrazine, 2-ethyl-5-methyl pyrazin and 3-ethyl-2,5-dimethyl pyrazine which were not originated from both freeze-dried garlic and soybean oil were identified. They might be generated from thermal interactions of sugars and nonvolatile flavor precursors of garlic. In freeze-dried garlic roasted with sesame oil, the amount of diallyl sulfide, methyl allyl disulfide, dimethyl trisulfide increased whereas diallyl disulfide completely disappeared. The amount of two cyclic compounds 3,4-dihydro-3-vinyl-1,2-dithiin and 2-vinyl-4H-1,3-dithiin, which were artifacts from allicin, increased in roasted garlic with sesame oil.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2003.07b
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• pp.851-856
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• 2003

We have investigated the material and electrical properties of $Bi_{4-x}La_xTi_3O_{12}$ (BLT) ferroelectric thin film for ferroelectric nonvolatile memory applications of capacitor type and single transistor type. The 120nm thick BLT films were deposited on $Pt/Ti/SiO_2/Si$ and $SiO_2/Nitride/SiO_2$ (ONO) substrates by the sol-gel spin coating method and were annealed at $700^{\circ}C$. It was observed that the crystallographic orientation of BLT thin films were strongly affected by the excess Bi content and the intermediate rapid thermal annealing (RTA) treatment conditions regardeless of two type substrates. However, the surface microstructure and roughness of BLT films showed dependence of two different type substrates with orientation of (111) plane and amorphous phase. As increase excess Bi content, the crystallographic orientation of the BLT films varied drastically in BLT films and exhibited well-crystallized phase. Also, the conversion of crystallographic orientation at intermediate RTA temperature of above $450^{\circ}C$ started to be observed in BLT thin films with above excess 6.5% Bi content and the rms roughness of films is decreased. We found that the electrical properties of BLT films such as the P-V hysteresis loop and leakage current were effectively modulated by the crystallographic orientations change of thin films.

• Journal of the Korean Ceramic Society
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• v.34 no.2
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• pp.202-208
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• 1997

Bi-layered SrBi2Ta2O9(SBT) films were deposited on Pt/Ti/SiO2/Si sibstrates by rf magnetron sputt-ering at room temperature and then were annealed at 75$0^{\circ}C$, 80$0^{\circ}C$ and 85$0^{\circ}C$ for 1 hour in oxygen at-mosphere. The film composition of SrBi2Ta2O9 was obtained after depositing at room temperature and annealing at 80$0^{\circ}C$. Excess 20mole% Bi2O3 and 30 mole% SrCO3 were added to the target to compensate for the lack of Bi and Sr in SBT film. 200 nm thick SBT film exhibited and dense microstructure, adielectric constant of 210, and a dissipation factor of 0.05 at 1 MHz frequency. The films exhibited Curie temperature of 32$0^{\circ}C$ and a dielectric constant of 314 at that temperature under 100 kHz frequency. The remanent polarization(2Pr) and the coercive field(2Ec) of the SBT films were 9.1 $\mu$C/$\textrm{cm}^2$ and 85 kV/cm at an applied voltage of 3V, resspectively and the SBT film showed a fatigue-free characteristics up to 1010 cy-cles under 5V bipolar pulse. The leakage current density of the SBT film was about 7$\times$10-7A/$\textrm{cm}^2$ at 150 kV/cm. Fatigue-free SBT films prepared by rf magnetron sputtering can be suitable for application to non-volatile memory device.

• Journal of the Korean Institute of Telematics and Electronics D
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• v.36D no.11
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• pp.63-70
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• 1999

A PLT(10) thin film has been deposited on $Pt/TiO_2/SiO_2/Si$ substrate by sol-gel method, and its switching characteristics have been investigated with various top electrode areas, input pulse voltages and loan resistances. As the external input pulse voltage increases from 2V to 5V, the switching time decreases from $0.49{\mu}s$ to $0.12{\mu}s$. The activation energy ($E_a$) obtained from the relations between the switching time and the applied pulse voltage is evaluated as 209kV/cm. The switched charge densities at 5V obtained from the hysteresis loop and the polarization switching are $11.69{\mu}C/cm^2$ and $13.02{\mu}C/cm^2$, respectively, which agree relatively well with each other and show the difference of 10%. When the top electrode area increases from TEX>$3.14{\times}10^{-4}cm^2$ to $5.03{\times}10^{-3}cm^2$ and the load resistance increases from 50${\Omega}$ to 3.3$k{\Omega}$, the switching time increases from $0.12{\mu}s$ to $1.88{\mu}s$ and from $0.12{\mu}s$ to $9.7{\mu}s$, respectively. These switching characteristics indicate that PLT(10) thin film can be well applied in nonvolatile memory devices.

• Journal of the Institute of Electronics Engineers of Korea SD
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• v.45 no.12
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• pp.1-7
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• 2008

Magnetic Tunneling Junction (MTJ) has been used as a nonvolatile universal storage element mainly in memory technology. However, according to several recent studies, magneto-logic using MTJ elements show much potential in substitution for the transistor-based logic device. Magneto-logic based on MTJ can maintain the data during the power-off mode, since an MTJ element can store the result data in itself. Moreover, just by changing input signals, the full logic functions can be realized. Because of its programmability, it can embody the reconfigurable magneto-logic circuit in the rigid physical architecture. In this paper, we propose a novel 3-bit arbitrary magneto-logic circuit beyond the simple combinational logic or the short sequential one. We design the 3-bit magneto-logic which has the most complexity using MTJ elements and verify its functionality. The simulation results are presented with the HSPICE macro-model of MTJ that we have developed in our previous work. This novel magneto-logic based on MTJ can realize the most complex logic function. What is more, 3-bit arbitrary logic operations can be implemented by changing gate signals of the current drivel circuit.

• Proceedings of the Korean Vacuum Society Conference
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• 2010.08a
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• pp.173-173
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• 2010

$Bi_4Ti_3O_{12}$ ($B_4T_3$) is a unique ferroelectric material that has a relatively high dielectric constant, high Curie temperature, high breakdown strength, and large spontaneous polarization. As a result this material has been widely studied for many applications, including nonvolatile ferroelectric random memories, microelectronic mechanical systems, and nonlinear-optical devices. Several reports have appeared on the use of Mn dopants to improve the electrical properties of $B_4T_3$ thin films. Mn ions have frequently been used for this purpose in thin films and multilayer capacitors in situations where intrinsic oxygen vacancies are the major defects. However, no systematic study of the optical properties of $B_4T_3$ films has appeared to date. Here, we report optical data for these films, determined by spectroscopic ellipsometry (SE). We also report the effects of thermal annealing and Mn doping on the optical properties. The SE data were analyzed using a multilayer model that is consistent with the original sample structure, specifically surface roughness/$B_4T_3$ film/Pt/Ti/$SiO_2$/c-Si). The data are well described by the Tauc-Lorentz dispersion function, which can therefore be used to model the optical properties of these materials. Parameters for reconstructing the dielectric functions of these films are also reported. The SE data show that thermal annealing crystallizes $B_4T_3$ films, as confirmed by the appearance of $B_4T_3$ peaks in X-ray diffraction patterns. The bandgap of $B_4T_3$ red-shifts with increasing Mn concentration. We interpret this as evidence of the existence deep levels generated by the Mn transition-metal d states. These results will be useful in a number of contexts, including more detailed studies of the optical properties of these materials for engineering high-speed devices.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2003.07a
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• pp.319-322
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• 2003

To match the charge induced by the insulators $CeO_2$ with the remanent polarization of ferro electric SBT thin films, areas of Pt/SBT/Pt (MFM) and those of $Pt/CeO_2/Si$ (MIS) capacitors were ind ependently designed. The area $S_M$ of MIS capacitors to the area $S_F$ of MFM capacitors were varied from 1 to 10, 15, and 20. Top electrode Pt and SBT layers were etched with for various area ratios of $S_M\;/\;S_F$. Bottom electrode Pt and $CeO_2$ layers were respectively deposited by do and rf sputtering in-situ process. SBT thin film were prepared by the metal orgnic decomposition (MOD) technique. $Pt(100nm)/SBT(350nm)/Pt(300nm)/CeO_2(40nm)/p-Si$ (MFMIS) gate structures have been fabricated with the various $S_M\;/\;S_F$ ratios using inductively coupled plasma reactive ion etching (ICP-RIE). The leakage current density of MFMIS gate structures were improved to $6.32{\times}10^{-7}\;A/cm^2$ at the applied gate voltage of 10 V. It is shown that in the memory window increase with the area ratio $S_M\;/\;S_F$ of the MFMIS structures and a larger memory window of 3 V can be obtained for a voltage sweep of ${\pm}9\;V$ for MFMIS structures with an area ratio $S_M\;/\;S_F\;=\;6$ than that of 0.9 V of MFS at the same applied voltage. The maximum memory windows of MFMIS structures were 2.28 V, 3.35 V, and 3.7 V with the are a ratios 1, 2, and 6 at the applied gate voltage of 11 V, respectively. It is concluded that ferroelectric gate capacitors of MFMIS are good candidates for nondestructive readout-nonvolatile memories.

• Journal of KIISE:Databases
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• v.34 no.2
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• pp.133-140
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• 2007

Flash memory has penetrated our life in various forms. For example, flash memory is important storage component of ubiquitous computing or mobile products such as cell phone, MP3 player, PDA, and portable storage kits. Behind of the wide acceptance as memory is many advantages of flash memory: for instances, low power consumption, nonvolatile, stability and portability. In addition to mentioned strengths, the recent development of gigabyte range capacity flash memory makes a careful prediction that the flash memory might replace some of storage area dominated by hard disks. In order to have overwriting function, one block must be erased before overwriting is performed. This difference results in the cost of reading, writing and erasing in flash memory[1][5][6]. Since this difference has not been considered in traditional buffer replacement technologies adopted in system software such as OS and DBMS, a new buffer replacement strategy becomes necessary. In this paper, a new buffer replacement strategy, reflecting difference I/O cost and applicable to flash memory, suggest and compares with other buffer replacement strategies using workloads as Zipfian distribution and real data.