• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2003년도 추계학술대회 논문집 Vol.16
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• pp.112-115
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• 2003

There is a growing need for a nonvolatile memory technology with faster speed than existing nonvolatile memories. $T_c$(crystallization temperature) is confirmed by measuring the conductivity with the varying temperature. The sample is heated on the hotplate and slow down to the room-temperature. We prepared Te based alloy bulk. The materials can be used for nonvolatile random access memory.

• 반도체디스플레이기술학회지
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• 제22권1호
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• pp.43-48
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• 2023

This paper discusses the design of 32Mbyte asynchronous nonvolatile memory modules, which includes self-diagnosis and RTC (Real Time Clock) functions to enhance their data stability and reliability. Nonvolatile memory modules can maintain data even in a power-off state, thereby improving the stability and reliability of a system or device. However, due to the possibility of data error due to electrical or physical reasons, additional data loss prevention methods are required. To minimize data error in asynchronous nonvolatile memory modules, this paper proposes the use of voltage monitoring circuits, self-diagnosis, BBT (Bad Block Table), ECC (Error Correction Code), CRC (Cyclic Redundancy Check)32, and data check sum, data recording method using RTC. Prototypes have been produced to confirm correct operation and suggest the possibility of commercialization.

• 한국재료학회:학술대회논문집
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• 한국재료학회 2006년도 추계학술발표대회 및 제11회 신소재 심포지엄
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• pp.13.2-13.2
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• 2006

• 한국수산과학회지
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• 제18권3호
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• pp.227-234
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• 1985

우리나라산 주요패류의 유기산조성과 이의 가공처리에 따른 변화를 밝히고져 실험검토하였다. 본보에서는 소라, 대합 및 전복 등 3종류의 패류를 시료로 하여 생체 및 이를 자건하였을 때의 유기산조성을 GLC로 분석검토하였다. 3종류의 시료중 소라 및 전복에 있어서는 8증류, 대합에 있어서는 9종류의 유기산이 동정 및 정량되었으며, 주요산은 소라에 있어서는 succinic, malic 및 pyroglutamic acid로서 유기산총량의 $89.2\%$를 차지하였고, 대합의 주요산은 succinic, lactic 및 malic acid로서 총량의 $92.9\%$를 차지 하였으며, 전복의 주요산은 succinic, lactic 및 pyroglutamic acid로서 총량의 $85.7\%$를 차지하였다. 3종류의 시료는 모두 succinic acid의 함량이 가장 많아, 소라에 있어서는 총산량의 $46.3\%$, 대합에 있어서는 $63.5\%$, 전복에 있어서는 $34.7\%$의 함량을 나타내었다. 유기산총량에 있어서는 대합이 744.2mg/100g로서 가장 많아 전복의 경우의 약 3배양을 나타내었고, 다음은 소라로서 546.5mg/100g로서 전복의 2배양 이상을 나타내었으며, 전복이 가장 적어 259.4mg/100g이었다. 생시료를 자건하였을 때 유기산총량의 감소율은 전복이 $63.5\%$로 가장 높고, 이어 소라의 $52.1\%$, 대합의 $38.0\%$의 순이었다. 또한, 자건처리에 의한 각 유기산의 감소율은 시료에 따라 많은 차이를 나타내었는데, 전반적로 볼 때 감소율이 큰 유기산은 fumaric, malic 및 citric acid등이고, 감소율이 적은 유기산은 malic, oxalic 및 succinic acid 등이었다.

• 한국식생활문화학회지
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• 제4권2호
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• pp.177-179
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• 1989

This study was carried out to investigate the compositions of free sugars, lipids, and nonvolatile organic acids in parts of omija. The major components of free sugars in each part of omija were fructose and glucose. The contents of those were similar in fruits and endocarps, however, the content of glucose was 1.5 times as much as that of fructose in seeds. The content of lipids in endocarps was 2.4 times as much as that in seeds, and major composition of lipids was neutral lipid. In the contents of nonvolatile organic acids, the content of citric acid that content was 61 to 68% depend on each part of sample was highest among other components, and that of malic acid being 25 to 30% was followed. The contents of nonvolatile organic acids of water extract were 74.5, 55.9, and 69.2% as high as those of original sample in fruits, endocarps, and seeds, respectively. The content of oxalic acid in seeds was lower than that of it in original sample.

• JSTS:Journal of Semiconductor Technology and Science
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• 제5권3호
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• pp.195-203
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• 2005

Recently, a novel multi-bit nonvolatile memory based on double gate (DG) MOSFET is proposed to overcome the short channel effects and to increase the memory density. We need more complex voltage schemes for DG MOSFET devices. In view of peripheral circuits driving memory cells, one should consider various voltage sources used for several operations. It is one of the key issues to minimize the number of voltage sources. This criterion needs more caution in considering a DG nonvolatile memory cell that inevitably requires more number of events for voltage sources. Therefore figuring out the permissible range of operating bias should be preceded for reliable operation. We found that reliable operation largely depends on the depletion conditions of the silicon channel according to charge amount stored in the floating gates and the negative control gate voltages applied for read operation. We used Silvaco Atlas, a 2D numerical simulation tool as the device simulator.

• 전기전자학회논문지
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• 제27권4호
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• pp.386-390
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• 2023

본 연구에서는 기존 상보성 금속 산화막 반도체 공정을 활용하여 제작된 실리콘 나노시트(SiNS) 피드백 전계효과 트랜지스터(FBFET)의 준비휘발성 메모리 특성을 분석하였다. 과노광공정을 이용하여 형성된 SiNS 채널층의 폭은 180 nm이고 높이는 70 nm이었다. 양성 피드백 루프를 기반으로 동작하는 SiNS FBFET의 낮은 문턱전압이하 기울기는 1.1 mV/dec, ON/OFF 전류비는 2.4×10⁷이었다. 또한 SiNS FBFET는 50 초 동안 상태를 유지하는 메모리 특성을 보여 준휘발성메모리 소자로 활용 가능성을 제시하였다.

• Transactions on Electrical and Electronic Materials
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• 제11권4호
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• pp.155-165
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• 2010

As a promising candidate to replace the conventional floating gate flash memories, polysilicon-oxide-nitride-oxidesilicon (SONOS)-type nonvolatile semiconductor memories have been investigated widely in the past several years. SONOS-type memories have some advantages over the conventional floating gate flash memories, such as lower operating voltage, excellent endurance and compatibility with standard complementary metal-oxide-semiconductor (CMOS) technology. However, their operating speed and date retention characteristics are still the bottlenecks to limit the applications of SONOS-type memories. Recently, various approaches have been used to make a trade-off between the operating speed and the date retention characteristics. Application of high-k dielectrics to SONOS-type memories is a predominant route. This article provides the state-of-the-art research progress of high-k dielectrics applicable to SONOS-type nonvolatile semiconductor memories. It begins with a short description of working mechanism of SONOS-type memories, and then deals with the materials' requirements of high-k dielectrics used for SONOS-type memories. In the following section, the microstructures of high-k dielectrics used as tunneling layers, charge trapping layers and blocking layers in SONOS-type memories, and their impacts on the memory behaviors are critically reviewed. The improvement of the memory characteristics by using multilayered structures, including multilayered tunneling layer or multilayered charge trapping layer are also discussed. Finally, this review is concluded with our perspectives towards the future researches on the high-k dielectrics applicable to SONOS-type nonvolatile semiconductor memories.

• 한국연초학회지
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• 제4권2호
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• pp.75-80
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• 1982

During the process of curing of the tobacco (Nicotiana tabacum L. ) leaves the concentration change of Nonvolatile organic acids and Higher fatty acids of the flue-cured tobacco leaves was observed. The contents of Nonvolatile organic acids in flue-cured tobacco leaves were as follows, malic> oxalic>malonic>citric>succinic acid. Higher fatty acids was linolenic>Palmitic>oleic >stearic$\geqq$linoleic acid, Citric acid content of last curing time was increased about 4~5 times in compare to before curing tobacco. It was concluded that significant changes of three variety flue-cured tobacco but a significant difference was observed in the composition of Daegu gold variety.

• 대한전자공학회:학술대회논문집
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• 대한전자공학회 2005년도 추계종합학술대회
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• pp.825-828
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• 2005

In this paper, we propose a new nonvolatile unit memory cell and proposal peripheral circuit using the polymer material. Memory that relies on bistable behavior- having tow states associated with different resistances at the same applied voltage - has attracted much interest because of its nonvolatile properties. Such memory may also have other merits, including simplicity of structure and manufacturing, and the small size of memory cells. We have plotted the load line graphs for the use of a polymer memory character, hence we have designed in the band-gap reference shape of a write/erase drive, and then designed in the 2-stage differential amplifier shape of a sense amplifier in the consideration of a low current characteristic of a polymer memory cell. The simulation result shows that is has high gain about 80dB by sensing the very small current.